CN101226778A - 具有判定半导体微电流功能的半导体存储器 - Google Patents

具有判定半导体微电流功能的半导体存储器 Download PDF

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Publication number
CN101226778A
CN101226778A CNA2007101820489A CN200710182048A CN101226778A CN 101226778 A CN101226778 A CN 101226778A CN A2007101820489 A CNA2007101820489 A CN A2007101820489A CN 200710182048 A CN200710182048 A CN 200710182048A CN 101226778 A CN101226778 A CN 101226778A
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CN
China
Prior art keywords
current
bit line
unit
electric current
semiconductor memory
Prior art date
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Pending
Application number
CNA2007101820489A
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English (en)
Chinese (zh)
Inventor
森俊树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN101226778A publication Critical patent/CN101226778A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/025—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in signal lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5006—Current

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  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Tests Of Electronic Circuits (AREA)
CNA2007101820489A 2007-01-16 2007-10-24 具有判定半导体微电流功能的半导体存储器 Pending CN101226778A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007007239 2007-01-16
JP2007007239A JP2008176830A (ja) 2007-01-16 2007-01-16 半導体微少電流判定方法および手段、半導体メモリ

Publications (1)

Publication Number Publication Date
CN101226778A true CN101226778A (zh) 2008-07-23

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ID=39617645

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007101820489A Pending CN101226778A (zh) 2007-01-16 2007-10-24 具有判定半导体微电流功能的半导体存储器

Country Status (3)

Country Link
US (1) US7636263B2 (https=)
JP (1) JP2008176830A (https=)
CN (1) CN101226778A (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102044286A (zh) * 2009-10-09 2011-05-04 旺宏电子股份有限公司 源极端感测的渗入电流系统
CN102142283A (zh) * 2010-01-28 2011-08-03 中芯国际集成电路制造(上海)有限公司 非易失性存储器的测试方法
CN102354534A (zh) * 2011-07-06 2012-02-15 钰创科技股份有限公司 检测存储器中连接缺陷的方法与可检测连接缺陷的存储器
CN102426858A (zh) * 2011-11-30 2012-04-25 中国科学院微电子研究所 一种检测存储单元漏电流的方法及系统
CN101800082B (zh) * 2009-02-11 2012-12-05 北京兆易创新科技有限公司 一种用于mlc闪存的灵敏放大器和电流电压转换电路
CN103117094A (zh) * 2013-01-28 2013-05-22 上海宏力半导体制造有限公司 闪存的测试方法
CN104575614A (zh) * 2015-02-10 2015-04-29 武汉新芯集成电路制造有限公司 一种存储单元失效筛选的方法
CN111435154A (zh) * 2018-12-25 2020-07-21 北京兆易创新科技股份有限公司 漏电检测电路、闪存存储器漏电检测装置和漏电检测方法

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Publication number Priority date Publication date Assignee Title
US7480183B2 (en) * 2006-07-05 2009-01-20 Panasonic Corporation Semiconductor memory device, and read method and read circuit for the same
JP4937219B2 (ja) 2008-09-17 2012-05-23 株式会社東芝 不揮発性半導体記憶装置
KR101003866B1 (ko) * 2009-05-29 2010-12-30 주식회사 하이닉스반도체 불휘발성 메모리 소자의 비트라인 누설 전류 테스트 방법
JP5426250B2 (ja) * 2009-06-26 2014-02-26 三星電子株式会社 不揮発性半導体メモリの放電回路
KR101332072B1 (ko) 2011-11-17 2014-01-22 서울시립대학교 산학협력단 전원장치에 사용되는 ic 회로
JP2013254545A (ja) * 2012-06-08 2013-12-19 Sharp Corp 不揮発性半導体記憶装置、及び、可変抵抗素子の抵抗制御方法
US20160254060A1 (en) * 2013-03-15 2016-09-01 Taqua Wbh, Llc High Speed And Low Power Sense Amplifier
US9552864B1 (en) * 2016-03-11 2017-01-24 Micron Technology, Inc. Offset compensation for ferroelectric memory cell sensing
JP6708962B2 (ja) * 2016-08-01 2020-06-10 ユナイテッド・セミコンダクター・ジャパン株式会社 半導体記憶装置及びその制御方法
US10255987B1 (en) * 2017-10-11 2019-04-09 Globalfoundries Inc. Margin test for one-time programmable memory (OTPM) array with common mode current source
US11514968B2 (en) * 2020-03-26 2022-11-29 Micron Technology, Inc. Charge leakage detection for memory system reliability
TWI712040B (zh) * 2020-05-12 2020-12-01 力旺電子股份有限公司 具多階型記憶胞陣列之非揮發性記憶體及其相關讀取控制方法
CN115639397B (zh) * 2021-07-19 2025-07-18 无锡华润上华科技有限公司 cell电流测试电路及其测试方法
CN114758713B (zh) * 2022-06-14 2022-10-14 之江实验室 一种加速铁电存储器耐久性测试的电路和方法

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
JPH06251593A (ja) 1993-02-24 1994-09-09 Matsushita Electron Corp フラッシュメモリの消去あるいは書き込み制御方法
US6011416A (en) * 1997-02-19 2000-01-04 Harness System Technologies Research Ltd. Switch circuit having excess-current detection function
US6201747B1 (en) * 1999-09-30 2001-03-13 Advanced Micro Devices, Inc. Method and apparatus for measuring subthreshold current in a memory array
JP2002184190A (ja) * 2000-12-11 2002-06-28 Toshiba Corp 不揮発性半導体記憶装置
US6370061B1 (en) * 2001-06-19 2002-04-09 Advanced Micro Devices, Inc. Ceiling test mode to characterize the threshold voltage distribution of over programmed memory cells
US6891768B2 (en) * 2002-11-13 2005-05-10 Hewlett-Packard Development Company, L.P. Power-saving reading of magnetic memory devices
JP2005302809A (ja) 2004-04-07 2005-10-27 Toshiba Corp 半導体装置
US7405988B2 (en) * 2005-09-26 2008-07-29 Silicon Storage Technology, Inc. Method and apparatus for systematic and random variation and mismatch compensation for multilevel flash memory operation
US7477559B2 (en) * 2005-11-01 2009-01-13 Stmicroelectronics S.R.L. Sense amplifier for low-voltage applications

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101800082B (zh) * 2009-02-11 2012-12-05 北京兆易创新科技有限公司 一种用于mlc闪存的灵敏放大器和电流电压转换电路
CN102044286A (zh) * 2009-10-09 2011-05-04 旺宏电子股份有限公司 源极端感测的渗入电流系统
CN102044286B (zh) * 2009-10-09 2014-09-17 旺宏电子股份有限公司 源极端感测的渗入电流系统
CN102142283A (zh) * 2010-01-28 2011-08-03 中芯国际集成电路制造(上海)有限公司 非易失性存储器的测试方法
CN102142283B (zh) * 2010-01-28 2013-03-13 中芯国际集成电路制造(上海)有限公司 非易失性存储器的测试方法
CN102354534B (zh) * 2011-07-06 2014-02-26 钰创科技股份有限公司 检测存储器中连接缺陷的方法与可检测连接缺陷的存储器
CN102354534A (zh) * 2011-07-06 2012-02-15 钰创科技股份有限公司 检测存储器中连接缺陷的方法与可检测连接缺陷的存储器
CN102426858A (zh) * 2011-11-30 2012-04-25 中国科学院微电子研究所 一种检测存储单元漏电流的方法及系统
CN102426858B (zh) * 2011-11-30 2014-07-23 中国科学院微电子研究所 一种检测存储单元漏电流的方法及系统
CN103117094A (zh) * 2013-01-28 2013-05-22 上海宏力半导体制造有限公司 闪存的测试方法
CN104575614A (zh) * 2015-02-10 2015-04-29 武汉新芯集成电路制造有限公司 一种存储单元失效筛选的方法
CN111435154A (zh) * 2018-12-25 2020-07-21 北京兆易创新科技股份有限公司 漏电检测电路、闪存存储器漏电检测装置和漏电检测方法
CN111435154B (zh) * 2018-12-25 2022-08-09 北京兆易创新科技股份有限公司 漏电检测电路、闪存存储器漏电检测装置和漏电检测方法

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Publication number Publication date
US7636263B2 (en) 2009-12-22
US20080170445A1 (en) 2008-07-17
JP2008176830A (ja) 2008-07-31

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Application publication date: 20080723