JP2008153374A - 不揮発性半導体メモリ - Google Patents
不揮発性半導体メモリ Download PDFInfo
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- JP2008153374A JP2008153374A JP2006338728A JP2006338728A JP2008153374A JP 2008153374 A JP2008153374 A JP 2008153374A JP 2006338728 A JP2006338728 A JP 2006338728A JP 2006338728 A JP2006338728 A JP 2006338728A JP 2008153374 A JP2008153374 A JP 2008153374A
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- concentration impurity
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- impurity regions
- semiconductor memory
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 239000012535 impurity Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 238000009825 accumulation Methods 0.000 abstract description 28
- 238000009792 diffusion process Methods 0.000 description 18
- 230000015654 memory Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- -1 Metal Oxide Nitride Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7923—Programmable transistors with more than two possible different levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42348—Gate electrodes for transistors with charge trapping gate insulator with trapping site formed by at least two separated sites, e.g. multi-particles trapping site
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
【解決手段】半導体基板101のチャネル形成領域上に絶縁膜102を介してゲート電極104を形成し、チャネル形成領域を挟んで高濃度不純物領域105,106を形成し、チャネル形成領域と高濃度不純物領域105,106との境界領域にそれぞれ低濃度不純物領域107,108を形成し、高濃度不純物領域106,105から供給された電荷を低濃度不純物領域107,108を介して蓄積する電荷蓄積層109,110を形成した不揮発性半導体メモリ100において、電荷蓄積層109,110を、絶縁膜103を介してゲート電極104と接し且つ高濃度不純物領域105,106に達しないように形成する。
【選択図】図1
Description
101 p型半導体基板
102 第1絶縁膜
103 第2絶縁膜
104 ゲート電極
105 第1n型高濃度不純物領域
106 第2n型高濃度不純物領域
107 第1n型低濃度不純物領域
108 第2n型低濃度不純物領域
109 第1電荷蓄積層
110 第2電荷蓄積層
111 チャネル形成領域
Claims (3)
- 半導体基板のチャネル形成領域上に第1絶縁膜を介して形成された制御電極と、
前記チャネル形成領域を挟んで前記半導体基板表面に形成された第1、第2高濃度不純物領域と、
前記チャネル形成領域と前記第1、第2高濃度不純物領域との境界領域にそれぞれ形成された第1、第2低濃度不純物領域と、
前記第2、第1高濃度不純物領域から供給された電荷を前記第1、第2低濃度不純物領域を介して蓄積する第1、第2電荷蓄積層と、
を有する不揮発性半導体メモリであって、
前記第1、第2電荷蓄積層が、第2絶縁膜を介して前記制御電極の側面と接し且つ前記第1、第2高濃度不純物領域に達しないように形成されたことを特徴とする不揮発性半導体メモリ。 - 前記第1、第2電荷蓄積層がI字状に形成されたことを特徴とする請求項1に記載の不揮発性半導体メモリ。
- 前記第1、第2電荷蓄積層が、L字状に形成され、且つ、チャネル方向に最も厚い部分の膜厚が最も薄い部分の膜厚の2倍以下であることを特徴とする請求項1に記載の不揮発性半導体メモリ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006338728A JP2008153374A (ja) | 2006-12-15 | 2006-12-15 | 不揮発性半導体メモリ |
US11/987,169 US20080142877A1 (en) | 2006-12-15 | 2007-11-28 | Nonvolatile semiconductor memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006338728A JP2008153374A (ja) | 2006-12-15 | 2006-12-15 | 不揮発性半導体メモリ |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008153374A true JP2008153374A (ja) | 2008-07-03 |
Family
ID=39526090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006338728A Pending JP2008153374A (ja) | 2006-12-15 | 2006-12-15 | 不揮発性半導体メモリ |
Country Status (2)
Country | Link |
---|---|
US (1) | US20080142877A1 (ja) |
JP (1) | JP2008153374A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009194156A (ja) * | 2008-02-14 | 2009-08-27 | Oki Semiconductor Co Ltd | 不揮発性メモリデバイス及びその製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001156188A (ja) * | 1999-03-08 | 2001-06-08 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
JP2004104009A (ja) * | 2002-09-12 | 2004-04-02 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2006024868A (ja) * | 2004-07-09 | 2006-01-26 | Oki Electric Ind Co Ltd | 半導体不揮発性メモリセルアレイとその製造方法 |
JP2007103764A (ja) * | 2005-10-06 | 2007-04-19 | Sharp Corp | 半導体記憶装置およびその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100206985B1 (ko) * | 1997-03-14 | 1999-07-01 | 구본준 | 플래시 메모리 소자 및 그 제조방법 |
US6133098A (en) * | 1999-05-17 | 2000-10-17 | Halo Lsi Design & Device Technology, Inc. | Process for making and programming and operating a dual-bit multi-level ballistic flash memory |
JP2003163292A (ja) * | 2001-08-13 | 2003-06-06 | Halo Lsi Inc | ツインnand素子構造、そのアレイ動作およびその製造方法 |
US20070164352A1 (en) * | 2005-12-12 | 2007-07-19 | The Regents Of The University Of California | Multi-bit-per-cell nvm structures and architecture |
-
2006
- 2006-12-15 JP JP2006338728A patent/JP2008153374A/ja active Pending
-
2007
- 2007-11-28 US US11/987,169 patent/US20080142877A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001156188A (ja) * | 1999-03-08 | 2001-06-08 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
JP2004104009A (ja) * | 2002-09-12 | 2004-04-02 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2006024868A (ja) * | 2004-07-09 | 2006-01-26 | Oki Electric Ind Co Ltd | 半導体不揮発性メモリセルアレイとその製造方法 |
JP2007103764A (ja) * | 2005-10-06 | 2007-04-19 | Sharp Corp | 半導体記憶装置およびその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009194156A (ja) * | 2008-02-14 | 2009-08-27 | Oki Semiconductor Co Ltd | 不揮発性メモリデバイス及びその製造方法 |
Also Published As
Publication number | Publication date |
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US20080142877A1 (en) | 2008-06-19 |
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