JP2008141179A5 - - Google Patents

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Publication number
JP2008141179A5
JP2008141179A5 JP2007276482A JP2007276482A JP2008141179A5 JP 2008141179 A5 JP2008141179 A5 JP 2008141179A5 JP 2007276482 A JP2007276482 A JP 2007276482A JP 2007276482 A JP2007276482 A JP 2007276482A JP 2008141179 A5 JP2008141179 A5 JP 2008141179A5
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JP
Japan
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film
less
thickness
semiconductor film
laser beam
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JP2007276482A
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Japanese (ja)
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JP2008141179A (ja
JP5252877B2 (ja
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Priority claimed from JP2007276482A external-priority patent/JP5252877B2/ja
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Publication of JP2008141179A5 publication Critical patent/JP2008141179A5/ja
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JP2007276482A 2006-11-07 2007-10-24 半導体装置の作製方法 Expired - Fee Related JP5252877B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007276482A JP5252877B2 (ja) 2006-11-07 2007-10-24 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006301810 2006-11-07
JP2006301810 2006-11-07
JP2007276482A JP5252877B2 (ja) 2006-11-07 2007-10-24 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008141179A JP2008141179A (ja) 2008-06-19
JP2008141179A5 true JP2008141179A5 (enExample) 2010-11-18
JP5252877B2 JP5252877B2 (ja) 2013-07-31

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JP2007276482A Expired - Fee Related JP5252877B2 (ja) 2006-11-07 2007-10-24 半導体装置の作製方法

Country Status (5)

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US (3) US7811911B2 (enExample)
EP (1) EP1921667B1 (enExample)
JP (1) JP5252877B2 (enExample)
KR (1) KR101380136B1 (enExample)
CN (1) CN101179012B (enExample)

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JP5085014B2 (ja) 2005-05-26 2012-11-28 株式会社ジャパンディスプレイイースト 半導体装置の製造方法及び半導体装置
US7615502B2 (en) * 2005-12-16 2009-11-10 Sandisk 3D Llc Laser anneal of vertically oriented semiconductor structures while maintaining a dopant profile
US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
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KR20110094022A (ko) * 2008-11-14 2011-08-19 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막 결정화를 위한 시스템 및 방법
CN102365315B (zh) * 2009-03-27 2014-12-10 旭硝子株式会社 有机聚硅氧烷和硬涂剂组合物以及具有硬涂层的树脂基板
EP2239084A1 (en) * 2009-04-07 2010-10-13 Excico France Method of and apparatus for irradiating a semiconductor material surface by laser energy
CN102049611B (zh) * 2009-10-30 2013-11-06 技鼎股份有限公司 应用于脆性材料的镭射加工装置及镭射加工和位移补偿的方法
CN102549716B (zh) * 2009-12-11 2016-08-03 国家半导体公司 用于基于氮化镓或其它氮化物的半导体装置的背侧应力补偿
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DE102012217633A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Verfahren und Vorrichtung zur Überprüfung eines optoelektronischen Bauteils auf Risse
US9209298B2 (en) 2013-03-08 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-oxide-semiconductor field-effect transistor with extended gate dielectric layer
JP6727762B2 (ja) * 2014-05-30 2020-07-22 株式会社半導体エネルギー研究所 発光装置及び電子機器
TWI755773B (zh) 2014-06-30 2022-02-21 日商半導體能源研究所股份有限公司 發光裝置，模組，及電子裝置
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WO2017159613A1 (ja) * 2016-03-15 2017-09-21 シャープ株式会社 アクティブマトリクス基板
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