JP2008141179A5 - - Google Patents

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Publication number
JP2008141179A5
JP2008141179A5 JP2007276482A JP2007276482A JP2008141179A5 JP 2008141179 A5 JP2008141179 A5 JP 2008141179A5 JP 2007276482 A JP2007276482 A JP 2007276482A JP 2007276482 A JP2007276482 A JP 2007276482A JP 2008141179 A5 JP2008141179 A5 JP 2008141179A5
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JP
Japan
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film
less
thickness
semiconductor film
laser beam
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JP2007276482A
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Japanese (ja)
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JP2008141179A (ja
JP5252877B2 (ja
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Priority claimed from JP2007276482A external-priority patent/JP5252877B2/ja
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Publication of JP2008141179A5 publication Critical patent/JP2008141179A5/ja
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JP2007276482A 2006-11-07 2007-10-24 半導体装置の作製方法 Expired - Fee Related JP5252877B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007276482A JP5252877B2 (ja) 2006-11-07 2007-10-24 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006301810 2006-11-07
JP2006301810 2006-11-07
JP2007276482A JP5252877B2 (ja) 2006-11-07 2007-10-24 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008141179A JP2008141179A (ja) 2008-06-19
JP2008141179A5 true JP2008141179A5 (enExample) 2010-11-18
JP5252877B2 JP5252877B2 (ja) 2013-07-31

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JP2007276482A Expired - Fee Related JP5252877B2 (ja) 2006-11-07 2007-10-24 半導体装置の作製方法

Country Status (5)

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US (3) US7811911B2 (enExample)
EP (1) EP1921667B1 (enExample)
JP (1) JP5252877B2 (enExample)
KR (1) KR101380136B1 (enExample)
CN (1) CN101179012B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5085014B2 (ja) 2005-05-26 2012-11-28 株式会社ジャパンディスプレイイースト 半導体装置の製造方法及び半導体装置
US7615502B2 (en) * 2005-12-16 2009-11-10 Sandisk 3D Llc Laser anneal of vertically oriented semiconductor structures while maintaining a dopant profile
US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
DE102008023035B4 (de) * 2008-05-09 2016-01-07 Novaled Ag Lichtemittierendes organisches Bauelement und Verfahren zum Herstellen
KR20100043011A (ko) * 2008-10-17 2010-04-27 세이코 엡슨 가부시키가이샤 유기 el 장치, 유기 el 장치의 제조 방법, 전자 기기
KR20110094022A (ko) * 2008-11-14 2011-08-19 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막 결정화를 위한 시스템 및 방법
WO2010110389A1 (ja) * 2009-03-27 2010-09-30 旭硝子株式会社 オルガノポリシロキサンおよびハードコート剤組成物並びにハードコート層を有する樹脂基板
EP2239084A1 (en) * 2009-04-07 2010-10-13 Excico France Method of and apparatus for irradiating a semiconductor material surface by laser energy
CN102049611B (zh) * 2009-10-30 2013-11-06 技鼎股份有限公司 应用于脆性材料的镭射加工装置及镭射加工和位移补偿的方法
CN102549716B (zh) * 2009-12-11 2016-08-03 国家半导体公司 用于基于氮化镓或其它氮化物的半导体装置的背侧应力补偿
KR20130100996A (ko) * 2010-08-31 2013-09-12 가부시끼가이샤 니혼 세이꼬쇼 레이저 어닐링 장치 및 레이저 어닐링 방법
US9755085B2 (en) 2011-07-08 2017-09-05 SK Hynix Inc. Semiconductor device and method of manufacturing the same
JP2014006049A (ja) * 2012-06-21 2014-01-16 Sumitomo Bakelite Co Ltd マイクロ流路チップの製造方法
DE102012217633A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Verfahren und Vorrichtung zur Überprüfung eines optoelektronischen Bauteils auf Risse
US9209298B2 (en) 2013-03-08 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-oxide-semiconductor field-effect transistor with extended gate dielectric layer
JP6727762B2 (ja) * 2014-05-30 2020-07-22 株式会社半導体エネルギー研究所 発光装置及び電子機器
TWI699023B (zh) 2014-06-30 2020-07-11 日商半導體能源研究所股份有限公司 發光裝置,模組,及電子裝置
WO2016014173A1 (en) * 2014-07-21 2016-01-28 Applied Materials, Inc. Scanned pulse anneal apparatus and methods
CN107104138B (zh) 2016-02-19 2021-04-27 硅显示技术有限公司 氧化物半导体晶体管
US20190081077A1 (en) * 2016-03-15 2019-03-14 Sharp Kabushiki Kaisha Active matrix substrate
KR101872421B1 (ko) * 2016-04-12 2018-06-28 충북대학교 산학협력단 산화물 반도체 기반의 트랜지스터 및 그 제조 방법
US10170419B2 (en) 2016-06-22 2019-01-01 International Business Machines Corporation Biconvex low resistance metal wire
CN110165017B (zh) * 2019-04-18 2021-08-24 中国科学院宁波材料技术与工程研究所 制备隧穿氧钝化接触结构的快速退火方法
KR102170175B1 (ko) * 2019-06-26 2020-10-27 인하공업전문대학산학협력단 플렉시블 디스플레이 장치 제조를 위한 가접합 캐리어 글래스-금속 호일 접합체의 제조방법
US11909091B2 (en) 2020-05-19 2024-02-20 Kymeta Corporation Expansion compensation structure for an antenna
KR102796256B1 (ko) * 2020-08-03 2025-04-17 삼성디스플레이 주식회사 표시 장치의 제조장치 및 제조방법
US20250132180A1 (en) * 2023-10-24 2025-04-24 Tokyo Electron Limited Wafer bow metrology system

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173129A (en) 1983-10-27 1992-12-22 Kawasaki Steel Corporation Grain-oriented silicon steel sheet having a low iron loss free from deterioration due to stress-relief annealing and a method of producing the same
JPS61154146A (ja) 1984-12-27 1986-07-12 Toshiba Corp 半導体装置の製造方法
US5389450A (en) 1987-06-12 1995-02-14 Lanxide Technology Company, Lp Composite materials and methods for making the same
US5874175A (en) 1988-11-29 1999-02-23 Li; Chou H. Ceramic composite
EP0456199B1 (en) 1990-05-11 1997-08-27 Asahi Glass Company Ltd. Process for preparing a polycrystalline semiconductor thin film transistor
US5578520A (en) 1991-05-28 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
JPH05182923A (ja) 1991-05-28 1993-07-23 Semiconductor Energy Lab Co Ltd レーザーアニール方法
US5411563A (en) 1993-06-25 1995-05-02 Industrial Technology Research Institute Strengthening of multilayer ceramic/glass articles
US5640045A (en) 1996-02-06 1997-06-17 Directed Energy, Inc. Thermal stress minimization in power semiconductor devices
JP3565983B2 (ja) 1996-04-12 2004-09-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
AUPO347196A0 (en) * 1996-11-06 1996-12-05 Pacific Solar Pty Limited Improved method of forming polycrystalline-silicon films on glass
EP0895861B1 (en) 1997-08-05 2003-11-26 Canon Kabushiki Kaisha A liquid discharge head, a substrate for use of such head and a method of manufacture therefor
JP4183786B2 (ja) * 1997-10-17 2008-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3978145B2 (ja) 1998-12-29 2007-09-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6380558B1 (en) 1998-12-29 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6521492B2 (en) * 2000-06-12 2003-02-18 Seiko Epson Corporation Thin-film semiconductor device fabrication method
JP4653374B2 (ja) 2001-08-23 2011-03-16 セイコーエプソン株式会社 電気光学装置の製造方法
US6617690B1 (en) * 2002-08-14 2003-09-09 Ibm Corporation Interconnect structures containing stress adjustment cap layer
JP3961398B2 (ja) * 2002-10-30 2007-08-22 富士通株式会社 半導体装置
JP2005012003A (ja) * 2003-06-19 2005-01-13 Sharp Corp 結晶質半導体膜およびその製造方法
JP4831961B2 (ja) * 2003-12-26 2011-12-07 株式会社半導体エネルギー研究所 半導体装置の作製方法、選択方法
US7282380B2 (en) 2004-03-25 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2006100698A (ja) * 2004-09-30 2006-04-13 Toshiba Corp 半導体装置の製造方法
JP5201790B2 (ja) * 2004-11-26 2013-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5085014B2 (ja) * 2005-05-26 2012-11-28 株式会社ジャパンディスプレイイースト 半導体装置の製造方法及び半導体装置
US20070096107A1 (en) 2005-11-03 2007-05-03 Brown Dale M Semiconductor devices with dielectric layers and methods of fabricating same

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