JP5252877B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5252877B2
JP5252877B2 JP2007276482A JP2007276482A JP5252877B2 JP 5252877 B2 JP5252877 B2 JP 5252877B2 JP 2007276482 A JP2007276482 A JP 2007276482A JP 2007276482 A JP2007276482 A JP 2007276482A JP 5252877 B2 JP5252877 B2 JP 5252877B2
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Prior art keywords
film
laser beam
glass substrate
layer
semiconductor film
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2007276482A
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English (en)
Japanese (ja)
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JP2008141179A5 (enExample
JP2008141179A (ja
Inventor
明久 下村
秀和 宮入
安弘 神保
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007276482A priority Critical patent/JP5252877B2/ja
Publication of JP2008141179A publication Critical patent/JP2008141179A/ja
Publication of JP2008141179A5 publication Critical patent/JP2008141179A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
JP2007276482A 2006-11-07 2007-10-24 半導体装置の作製方法 Expired - Fee Related JP5252877B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007276482A JP5252877B2 (ja) 2006-11-07 2007-10-24 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006301810 2006-11-07
JP2006301810 2006-11-07
JP2007276482A JP5252877B2 (ja) 2006-11-07 2007-10-24 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008141179A JP2008141179A (ja) 2008-06-19
JP2008141179A5 JP2008141179A5 (enExample) 2010-11-18
JP5252877B2 true JP5252877B2 (ja) 2013-07-31

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JP2007276482A Expired - Fee Related JP5252877B2 (ja) 2006-11-07 2007-10-24 半導体装置の作製方法

Country Status (5)

Country Link
US (3) US7811911B2 (enExample)
EP (1) EP1921667B1 (enExample)
JP (1) JP5252877B2 (enExample)
KR (1) KR101380136B1 (enExample)
CN (1) CN101179012B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170116865A (ko) * 2016-04-12 2017-10-20 충북대학교 산학협력단 산화물 반도체 기반의 트랜지스터 및 그 제조 방법
US10424672B2 (en) 2016-02-19 2019-09-24 Silicon Display Technology Oxide semiconductor transistor

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JP5085014B2 (ja) 2005-05-26 2012-11-28 株式会社ジャパンディスプレイイースト 半導体装置の製造方法及び半導体装置
US7615502B2 (en) * 2005-12-16 2009-11-10 Sandisk 3D Llc Laser anneal of vertically oriented semiconductor structures while maintaining a dopant profile
US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
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KR20100043011A (ko) * 2008-10-17 2010-04-27 세이코 엡슨 가부시키가이샤 유기 ｅｌ 장치, 유기 ｅｌ 장치의 제조 방법, 전자 기기
WO2010056990A1 (en) * 2008-11-14 2010-05-20 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
CN102365315B (zh) * 2009-03-27 2014-12-10 旭硝子株式会社 有机聚硅氧烷和硬涂剂组合物以及具有硬涂层的树脂基板
EP2239084A1 (en) * 2009-04-07 2010-10-13 Excico France Method of and apparatus for irradiating a semiconductor material surface by laser energy
CN102049611B (zh) * 2009-10-30 2013-11-06 技鼎股份有限公司 应用于脆性材料的镭射加工装置及镭射加工和位移补偿的方法
WO2011071717A2 (en) * 2009-12-11 2011-06-16 National Semiconductor Corporation Backside stress compensation for gallium nitride or other nitride-based semiconductor devices
WO2012029488A1 (ja) * 2010-08-31 2012-03-08 株式会社日本製鋼所 レーザアニール装置およびレーザアニール方法
JP6140400B2 (ja) 2011-07-08 2017-05-31 エスケーハイニックス株式会社ＳＫ ｈｙｎｉｘ Ｉｎｃ． 半導体装置及びその製造方法
JP2014006049A (ja) * 2012-06-21 2014-01-16 Sumitomo Bakelite Co Ltd マイクロ流路チップの製造方法
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JP6727762B2 (ja) * 2014-05-30 2020-07-22 株式会社半導体エネルギー研究所 発光装置及び電子機器
TWI755773B (zh) 2014-06-30 2022-02-21 日商半導體能源研究所股份有限公司 發光裝置，模組，及電子裝置
CN107578991A (zh) * 2014-07-21 2018-01-12 应用材料公司 扫描脉冲退火装置及方法
US20190081077A1 (en) * 2016-03-15 2019-03-14 Sharp Kabushiki Kaisha Active matrix substrate
US10170419B2 (en) 2016-06-22 2019-01-01 International Business Machines Corporation Biconvex low resistance metal wire
CN110165017B (zh) * 2019-04-18 2021-08-24 中国科学院宁波材料技术与工程研究所 制备隧穿氧钝化接触结构的快速退火方法
KR102170175B1 (ko) * 2019-06-26 2020-10-27 인하공업전문대학산학협력단 플렉시블 디스플레이 장치 제조를 위한 가접합 캐리어 글래스-금속 호일 접합체의 제조방법
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KR102796256B1 (ko) * 2020-08-03 2025-04-17 삼성디스플레이 주식회사 표시 장치의 제조장치 및 제조방법
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Publication number Priority date Publication date Assignee Title
US10424672B2 (en) 2016-02-19 2019-09-24 Silicon Display Technology Oxide semiconductor transistor
KR20170116865A (ko) * 2016-04-12 2017-10-20 충북대학교 산학협력단 산화물 반도체 기반의 트랜지스터 및 그 제조 방법
KR101872421B1 (ko) * 2016-04-12 2018-06-28 충북대학교 산학협력단 산화물 반도체 기반의 트랜지스터 및 그 제조 방법

Also Published As

Publication number Publication date
US7811911B2 (en) 2010-10-12
US8242002B2 (en) 2012-08-14
KR20080041596A (ko) 2008-05-13
KR101380136B1 (ko) 2014-04-01
CN101179012A (zh) 2008-05-14
US8017508B2 (en) 2011-09-13
US20110014780A1 (en) 2011-01-20
US20110312165A1 (en) 2011-12-22
EP1921667A2 (en) 2008-05-14
EP1921667A3 (en) 2011-05-04
US20080108206A1 (en) 2008-05-08
CN101179012B (zh) 2011-10-05
EP1921667B1 (en) 2017-05-03
JP2008141179A (ja) 2008-06-19

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