JP5085014B2 - 半導体装置の製造方法及び半導体装置 - Google Patents
半導体装置の製造方法及び半導体装置 Download PDFInfo
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Description
形成された薄膜からなるデバイスに断線などの不良を起こす。
状のほか、丸型のビームなどを用いることもできるが、本実施例のようにライン状のビームとしたほうが、同一のレーザパワーで一回の照射により結晶化できる範囲が拡大できる。
S=E・b2/(6(1−ν)R)・・・・・(式1)
なお、E:基板ヤング率、b:基板厚さ、ν:基板ポアソン比である。
Sxx=E b2/(1/Rx+ν/Ry)/(6(1―ν2))
Syy=E b2/(1/Ry+ν/Rx)/(6(1―ν2))
・・・・・(式2)
部にパルスエキシマレーザを用いた等方的な結晶粒からなる多結晶シリコンPSIを用いたTFTからなる画素スイッチPSWが形成されている。図18(b)では、回路部にCWレーザを用いてTFTのチャネルに流れる電流とほぼ同じ向きに長く横方向成長した結晶粒からなる多結晶シリコンSLXを用いたTFTが形成されている。
Claims (18)
- 歪点750℃以下のガラス基板の少なくとも一部にSiを主成分とする結晶が横方向成長されたCWレーザが照射された半導体膜が形成されており、前記ガラス基板周辺のCWレーザが照射された領域のガラス基板の引張り表面応力が、前記横方向成長されたCWレーザが照射された半導体膜の形成された領域のガラス基板の引張り表面応力より小であり、
前記半導体膜はガラス基板上に形成された下地絶縁膜上に形成されており、
前記ガラス基板周辺の少なくとも一部において前記ガラス基板の表面付近が前記下地絶縁膜とともに除去されていることを特徴とする半導体装置。 - 前記ガラス基板上に前記半導体膜を用いた回路が形成されており、前記回路の少なくとも一部に結晶を横方向成長させたSiを主成分とするCWレーザが照射された半導体膜を含み、前記ガラス基板周辺のCWレーザが照射された領域のガラス基板の引張り表面応力が、前記横方向成長させたCWレーザが照射された半導体膜を含む領域のガラス基板の引張り表面応力より小であることを特徴とする請求項1に記載の半導体装置。
- 前記横方向成長されたCWレーザが照射された半導体膜を含む領域のガラス基板の引張り表面の引張り応力と、ガラス基板周辺のCWレーザが照射された領域のガラス基板の引張り表面応力との差が200N/m以上であることを特徴とする請求項1に記載の半導体装置。
- 前記ガラス基板表面の表面張力が、前記横方向成長されたCWレーザが照射された半導体膜の形成された領域において、前記横方向成長されたCWレーザが照射された半導体膜の成長方向に平行な方向よりも垂直な方向に大である、請求項1に記載の半導体装置。
- 歪点750℃以下のガラス基板の少なくとも一部にSiを主成分とする結晶が横方向成長されたCWレーザが照射された半導体膜が形成されており、画像を表示し、前記半導体膜が形成された画像領域と前記画素領域の画素を駆動し、前記半導体膜が形成された回路を有し、前記回路の少なくとも一部に結晶を横方向成長させたSiを主成分とするCWレーザが照射された半導体膜を含み、前記横方向成長させたCWレーザが照射された半導体膜を含む領域のガラス基板の引張り表面応力と、画素領域の基板の引張り表面応力との差が200N/m以下であることを特徴とする半導体装置。
- 前記回路の少なくとも一部に結晶を横方向成長させたSiを主成分とするCWレーザが照射された半導体膜を含み、前記半導体膜の形成されているガラス基板周辺のCWレーザが照射された領域の引張り表面応力が、前記横方向成長されたCWレーザが照射された半導体膜の形成された領域の引張り表面応力より小であることを特徴とする請求項5に記載の半導体装置。
- 歪点750℃以下のガラス基板の少なくとも一部にSiを主成分とする結晶が横方向成長されたCWレーザが照射された半導体膜が形成されており、前記ガラス基板上に画像を表示し、前記半導体膜が形成された画像領域と、前記画素領域の画素を駆動し、前記半導体膜が形成された回路が形成され、前記回路の少なくとも一部に結晶を横方向成長させたSiを主成分とするCWレーザが照射された半導体膜を含み、前記横方向成長させたCWレーザが照射された半導体膜を含む領域のガラス基板の引張り表面応力と、前記画素領域のガラス基板の引張り表面応力との差が200N/m以上であり、前記基板周辺のCWレーザが照射された領域の少なくとも一部において厚さ0.5μm以上のシリコン酸化膜またはシリコン窒化膜からなる絶縁膜が形成されていることを特徴とする半導体装置。
- 前記ガラス基板表面の引張り応力が、前記横方向成長されたCWレーザが照射された半導体膜の形成された領域において、前記横方向成長されたCWレーザが照射された半導体膜の成長方向に平行な方向よりも垂直な方向に大であることを特徴とする請求項7記載の半導体装置。
- 歪点750℃以下のガラス基板の上に形成されたSiを主成分とする半導体の少なくとも一部にCWまたは擬似CWレーザ光を照射してSi結晶を横方向成長させるCWレーザを照射する工程を含む半導体装置の製造方法であって、
前記半導体装置の周辺部に設けた一部領域の半導体膜を除いて、前記CWまたは擬似CWレーザ光照射による横方向成長を行うことを特徴とする半導体装置の製造方法。 - 前記ガラス基板上に複数の半導体装置を形成した後前記複数の半導体装置を個々に分割する工程と、前記切断した各半導体装置の切断領域の周辺部に設けた一部領域の半導体膜を除いて、前記CWまたは擬似CWレーザ光による横方向成長を行う工程とを含むことを特徴とする請求項9に記載の半導体装置の製造方法。
- 歪点750℃以下のガラス基板の上に形成されたSiを主成分とする半導体の少なくとも一部にCWまたは擬似CWレーザ光を照射してSi結晶を横方向成長させる工程を含む半導体装置の製造方法であって、
CWまたは擬似CWレーザ光照射によるガラス基板表面の引張り表面応力の増分が200N/m以下となるように制御することを特徴とする半導体装置の製造方法。 - 複数の半導体装置のCWまたは擬似CWレーザ光の照射領域を基板上にほぼ直線上に配置し、各半導体装置に切断して分割する工程を含むことを特徴とする請求項11に記載の半導体装置の製造方法。
- 複数の半導体装置のCWまたは擬似CWレーザ光の照射領域を基板上にほぼ直線上に配置し、各半導体装置に切断して分割する工程を含む、前記請求項11に記載の半導体装置の製造方法。
- 歪点750℃以下のガラス基板を用いた半導体装置を、基板上に下地絶縁膜を介して形成された、Siを主成分とする半導体膜にCWまたは擬似CWレーザ光を照射して結晶を横方向成長させる工程を含み製造する半導体装置の製造方法であって、
前記半導体装置の周辺の少なくとも一部において下地絶縁膜およびガラス基板の表面をエッチングする工程を含むことを特徴とする半導体装置の製造方法。 - 前記基板上に複数の半導体装置を形成した後分割する工程と、分割された各半導体装置の基板切断位置付近の少なくとも一部において前記下地絶縁膜および前記ガラス基板の表面をエッチングする工程を含むことを特徴とする請求項14に記載の半導体装置の製造方法。
- 前記ガラス基板のエッチング深さが0.01μm以上1μm以下であることを特徴とする請求項14に記載の半導体装置の製造方法。
- 前記ガラス基板のエッチング深さが0.01μm以上1μm以下であることを特徴とする請求項14に記載の半導体装置の製造方法。
- 歪点750℃以下のガラス基板を用いた半導体装置を、基板上に下地絶縁膜を介して形成された、Siを主成分とする半導体膜にCWまたは擬似CWレーザ光を照射して結晶を横方向成長させる工程を含み製造する半導体装置の製造方法であって、
前記半導体装置の周辺の少なくとも一部において厚さ0.5μm以上のシリコン酸化膜またはシリコン窒化膜からなる絶縁膜を堆積する工程を含むことを特徴とする半導体装置の製造方法。
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