JP5032077B2 - 表示装置及びその製造方法 - Google Patents
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- JP5032077B2 JP5032077B2 JP2006250778A JP2006250778A JP5032077B2 JP 5032077 B2 JP5032077 B2 JP 5032077B2 JP 2006250778 A JP2006250778 A JP 2006250778A JP 2006250778 A JP2006250778 A JP 2006250778A JP 5032077 B2 JP5032077 B2 JP 5032077B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1281—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor by using structural features to control crystal growth, e.g. placement of grain filters
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Recrystallisation Techniques (AREA)
Description
4a ポリシリコン膜、 4b ポリシリコン膜、 5 ゲート絶縁膜、
6 ゲート配線 、6a ゲート電極、 7 層間絶縁膜、 8 コンタクトホール、
9 信号線、 10 保護膜、 11 画素電極層、 12 導電性膜、
13 保持容量電極、 14 保持容量配線、 15 接続パターン、
21、22、23、24、31、32、33 コンタクトホール、
110 基板、 111 表示領域、 112 額縁領域、
113 ゲート配線(走査信号線)、 114 信号線(表示信号線)、
115 走査信号駆動回路部、 116 表示信号駆動回路部、 117 画素、
118 外部配線、 119 外部配線、 120 TFT、 130 TFT
Claims (9)
- 基板上に設けられた信号線と、
前記基板上に前記信号線と離間して設けられた導電性膜と、
前記信号線、及び前記導電性膜の上に設けられた下地絶縁膜と、
前記下地絶縁膜の上に設けられたポリシリコン膜と、
前記ポリシリコン膜の上に形成された層間絶縁膜と、
前記層間絶縁膜の上に形成された画素電極と、
前記層間絶縁膜の上に前記画素電極と離間して形成され、前記ポリシリコン膜と前記信号線とを接続する接続パターンと、を備え、
下部に前記導電性膜が形成された前記ポリシリコン膜の結晶粒径が、下部に前記導電性膜が形成されていないポリシリコン膜の結晶粒径よりも大きい表示装置。 - 前記基板上に前記信号線、前記導電性膜、及び保持容量電極を備える請求項1に記載の表示装置。
- 下部に前記導電性膜を有する前記ポリシリコン膜が表示領域外の駆動回路部に設けられ、下部に前記導電性膜を有しない前記ポリシリコン膜が表示領域内の画素に設けられている請求項1又は2に記載の表示装置。
- 下部に前記導電性膜を有する前記ポリシリコン膜は、前記導電性膜と略同幅に設けられている請求項1乃至3のいずれかに記載の表示装置。
- 基板上に信号線、及び導電性膜を形成する工程と、
前記信号線、及び導電性膜の上に下地絶縁膜を形成する工程と、
前記下地絶縁膜の上にアモルファスシリコン膜を形成する工程と、
前記アモルファスシリコン膜を加熱してポリシリコン膜を形成する工程と、
前記ポリシリコン膜の上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜の上に、ポリシリコン膜のチャネル領域と対向配置されるゲート電極を形成する工程と、
前記ゲート電極の上に、層間絶縁膜を形成する工程と、
前記層間絶縁膜の上に画素電極と、前記信号線と前記ポリシリコン膜を電気的に接続する接続パターンと、を形成する工程と、を備え、
下部に前記導電性膜が形成された前記ポリシリコン膜の結晶粒径が、下部に前記導電性膜が形成されていない前記ポリシリコン膜の結晶粒径よりも大きい表示装置の製造方法。 - 前記基板上に前記信号線、前記導電性膜、及び保持容量電極を形成する工程を備える請求項5に記載の表示装置の製造方法。
- 前記ポリシリコン膜を形成する際、光の波長が532nmのYAGレーザによるレーザアニール法を用いる請求項5又は6に記載の表示装置の製造方法。
- 下部に前記導電性膜を有する前記ポリシリコン膜が表示領域外の駆動回路部に設けられ、下部に前記導電性膜を有しない前記ポリシリコン膜が表示領域内の画素に設けられている請求項5乃至7のいずれかに記載の表示装置の製造方法。
- 前記基板上に前記信号線、及び前記導電性膜を同時に形成する請求項5乃至8のいずれかに記載の表示装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2006250778A JP5032077B2 (ja) | 2006-09-15 | 2006-09-15 | 表示装置及びその製造方法 |
TW096129830A TW200813580A (en) | 2006-09-15 | 2007-08-13 | Display unit and manufacturing method thereof |
US11/838,571 US20080068698A1 (en) | 2006-09-15 | 2007-08-14 | Display unit and manufacturing method thereof |
KR1020070089299A KR100879041B1 (ko) | 2006-09-15 | 2007-09-04 | 표시 장치 및 그 제조 방법 |
CNA2007101536800A CN101144948A (zh) | 2006-09-15 | 2007-09-14 | 显示装置及其制造方法 |
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JP2006250778A JP5032077B2 (ja) | 2006-09-15 | 2006-09-15 | 表示装置及びその製造方法 |
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JP2008072018A JP2008072018A (ja) | 2008-03-27 |
JP5032077B2 true JP5032077B2 (ja) | 2012-09-26 |
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US (1) | US20080068698A1 (ja) |
JP (1) | JP5032077B2 (ja) |
KR (1) | KR100879041B1 (ja) |
CN (1) | CN101144948A (ja) |
TW (1) | TW200813580A (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009020483A (ja) | 2007-06-13 | 2009-01-29 | Sharp Corp | ホログラム素子、ホログラム素子作製装置、ホログラム素子作製方法、偏向光学ユニット、情報記録装置および情報再生装置 |
JP5515287B2 (ja) * | 2008-12-22 | 2014-06-11 | セイコーエプソン株式会社 | 表示装置、電子機器および表示装置の製造方法 |
WO2012140866A1 (ja) * | 2011-04-14 | 2012-10-18 | シャープ株式会社 | 半導体素子基板の製造方法及び半導体素子基板並びに表示装置 |
CN108780255B (zh) * | 2016-02-23 | 2021-05-18 | 夏普株式会社 | 液晶显示装置 |
CN108615680B (zh) * | 2018-04-28 | 2020-03-10 | 京东方科技集团股份有限公司 | 多晶硅层及其制造方法、薄膜晶体管及阵列基板的制造方法 |
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JP2008072018A (ja) | 2008-03-27 |
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