JP2008047888A5 - - Google Patents
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- Publication number
- JP2008047888A5 JP2008047888A5 JP2007187773A JP2007187773A JP2008047888A5 JP 2008047888 A5 JP2008047888 A5 JP 2008047888A5 JP 2007187773 A JP2007187773 A JP 2007187773A JP 2007187773 A JP2007187773 A JP 2007187773A JP 2008047888 A5 JP2008047888 A5 JP 2008047888A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor film
- thickness
- layer including
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 19
- 239000000758 substrate Substances 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- 239000011521 glass Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 230000010355 oscillation Effects 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007187773A JP5255793B2 (ja) | 2006-07-21 | 2007-07-19 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006199241 | 2006-07-21 | ||
| JP2006199241 | 2006-07-21 | ||
| JP2007187773A JP5255793B2 (ja) | 2006-07-21 | 2007-07-19 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008047888A JP2008047888A (ja) | 2008-02-28 |
| JP2008047888A5 true JP2008047888A5 (enExample) | 2010-07-29 |
| JP5255793B2 JP5255793B2 (ja) | 2013-08-07 |
Family
ID=39181278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007187773A Expired - Fee Related JP5255793B2 (ja) | 2006-07-21 | 2007-07-19 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5255793B2 (enExample) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4831961B2 (ja) * | 2003-12-26 | 2011-12-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、選択方法 |
| JP5201790B2 (ja) * | 2004-11-26 | 2013-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2007
- 2007-07-19 JP JP2007187773A patent/JP5255793B2/ja not_active Expired - Fee Related
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