JP2008135731A - 半導体装置の作製方法、及び半導体装置 - Google Patents
半導体装置の作製方法、及び半導体装置 Download PDFInfo
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- JP2008135731A JP2008135731A JP2007277694A JP2007277694A JP2008135731A JP 2008135731 A JP2008135731 A JP 2008135731A JP 2007277694 A JP2007277694 A JP 2007277694A JP 2007277694 A JP2007277694 A JP 2007277694A JP 2008135731 A JP2008135731 A JP 2008135731A
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Abstract
【解決手段】透光性を有する基板上にゲート電極層を形成し、ゲート電極層上に無機材料を含むゲート絶縁層を形成し、無機材料を含むゲート絶縁層上に光重合性反応基を含む有機層を形成し、ゲート電極層をマスクとして基板を通過した光を光重合性反応基を含む有機層に選択的に照射し光重合性反応基を含む有機層を選択的に重合し、光重合性反応基を含む有機層の重合した領域以外を除去し有機重合層を形成し、有機重合層の形成領域以外の無機材料を含むゲート絶縁層上に加水分解基を有する有機シラン膜を形成し、有機重合層上に導電性材料を含む組成物を吐出しソース電極層及びドレイン電極層を形成し、ゲート電極層、ソース電極層、及びドレイン電極層上に半導体層を形成する。
【選択図】図1
Description
本発明の実施の形態について、図1を用いて説明する。本実施の形態では、信頼性の高い薄膜トランジスタを自己整合的に作製することを目的とする。
図22(A)は本発明に係る表示パネルの構成を示す上面図であり、絶縁表面を有する基板2700上に画素2702をマトリクス状に配列させた画素部2701、走査線側入力端子2703、信号線側入力端子2704が形成されている。画素数は種々の規格に従って設ければ良く、XGAであれば1024×768×3(RGB)、UXGAであれば1600×1200×3(RGB)、フルスペックハイビジョンに対応させるのであれば1920×1080×3(RGB)とすれば良い。
本発明の実施の形態について、図15乃至図19を用いて説明する。本実施の形態は、本発明を適用した、より簡略化した工程で自己整合的に低コストに作製することを目的とした逆コプラナ型の薄膜トランジスタを有する表示装置を作製する一例について説明する。図15(A)乃至18(A)は表示装置画素部の上面図であり、図15(B)乃至図18(B)は、図15(A)乃至18(A)を形製する各工程における線E−Fによる断面図である。図19(A)も表示装置の上面図であり、図19(B)は、図19(A)における線O−P(線U−Wを含む)による断面図である。なお表示素子として液晶材料を用いた液晶表示装置の例を示す。よって、同一部分又は同様な機能を有する部分の繰り返しの説明は省略する。
本発明を適用して自己整合的に薄膜トランジスタを形成し、該薄膜トランジスタを用いて表示装置を形成することができるが、発光素子、及び該発光素子を駆動するトランジスタを用いた場合、該発光素子から発せられる光は、下面放射、上面放射、両面放射のいずれかを行う。ここでは、それぞれの場合に応じた発光素子の積層構造について、図11を用いて説明する。本実施の形態では、より簡略化した工程で低コストに作製することを目的とした表示装置の一例について説明する。
本実施の形態では、本発明の表示装置の有する発光素子に適用することのできる他の構成を、図13及び図14を用いて説明する。
次に、実施の形態2乃至5によって作製される表示パネルに駆動用のドライバ回路を実装する態様について説明する。本実施の形態では、より簡略化した工程で低コストに作製することを目的とした表示装置の一例について説明する。
本実施の形態を図10を用いて説明する。図10は、本発明を適用して作製されるTFT基板2800を用いてEL表示モジュールを構成する一例を示している。本実施の形態では、より簡略化した工程で低コストに作製することを目的とした表示装置の一例について説明する。図10において、TFT基板2800上には、画素により構成された画素部が形成されている。
本実施の形態を図20(A)及び図20(B)を用いて説明する。図20(A)、図20(B)は、本発明を適用して作製されるTFT基板2600を用いて表示装置(液晶表示モジュール)を構成する一例を示している。本実施の形態では、より簡略化した工程で低コストに作製することを目的とした表示装置の一例について説明する。
本実施の形態では、より簡略化した工程で低コストに作製することを目的とした表示装置の一例について説明する。
本発明によって形成される表示装置によって、テレビジョン装置を完成させることができる。図24はテレビジョン装置の主要な構成を示すブロック図を示している。表示パネルには、図22(A)で示すような構成として画素部901のみが形成されて走査線側駆動回路903と信号線側駆動回路902とが、図23(B)のようなTAB方式により実装される場合と、図23(A)のようなCOG方式により実装される場合と、図22(B)に示すようにTFTを形成し、画素部901と走査線側駆動回路903を基板上に形成し信号線側駆動回路902を別途ドライバICとして実装する場合、また図22(C)で示すように画素部901と信号線側駆動回路902と走査線側駆動回路903を基板上に一体形成する場合などがあるが、どのような形態としても良い。
本発明に係る電子機器として、テレビジョン装置(単にテレビ、又はテレビジョン受信機ともよぶ)、デジタルカメラ、デジタルビデオカメラ、携帯電話装置(単に携帯電話機、携帯電話ともよぶ)、PDA等の携帯情報端末、携帯型ゲーム機、コンピュータ用のモニタ、コンピュータ、カーオーディオ等の音響再生装置、家庭用ゲーム機等の記録媒体を備えた画像再生装置等が挙げられる。その具体例について、図26を参照して説明する。
(実施の形態12)
本発明によりプロセッサ回路を有するチップ(以下、プロセッサチップ、無線チップ、無線プロセッサ、無線メモリ、無線タグともよぶ)として機能する半導体装置を形成することができる。本発明の半導体装置の用途は広範にわたるが、例えば、紙幣、硬貨、有価証券類、証書類、無記名債券類、包装用容器類、書籍類、記録媒体、身の回り品、乗物類、食品類、衣類、保健用品類、生活用品類、薬品類及び電子機器等に設けて使用することができる。
Claims (10)
- 透光性を有する基板上にゲート電極層を形成し、
前記ゲート電極層上に無機材料を含むゲート絶縁層を形成し、
前記無機材料を含むゲート絶縁層上に光重合性反応基を含む有機層を形成し、
前記ゲート電極層をマスクとして前記基板を通過した光を前記光重合性反応基を含む有機層に選択的に照射し前記光重合性反応基を含む有機層を選択的に重合し、
前記光重合性反応基を含む有機層の前記重合した領域以外を除去し有機重合層を形成し、
前記有機重合層の形成領域以外の前記無機材料を含むゲート絶縁層上に加水分解基を有する有機シラン膜を形成し、
前記有機重合層上に導電性材料を含む組成物を吐出しソース電極層及びドレイン電極層を形成し、
前記ゲート電極層、前記ソース電極層、及び前記ドレイン電極層上に半導体層を形成することを特徴とする半導体装置の作製方法。 - 透光性を有する基板上にゲート電極層を形成し、
前記ゲート電極層上に無機材料を含むゲート絶縁層を形成し、
前記無機材料を含むゲート絶縁層上に光重合性反応基を含む有機層を形成し、
前記ゲート電極層をマスクとして前記基板を通過した光を前記光重合性反応基を含む有機層に選択的に照射し前記光重合性反応基を含む有機層を選択的に重合し、
前記光重合性反応基を含む有機層の前記重合した領域以外を除去し有機重合層を形成し、
前記有機重合層の形成領域以外の前記無機材料を含むゲート絶縁層上に第1の加水分解基を有する有機シラン膜を形成し、
前記有機重合層上に導電性材料を含む組成物を吐出しソース電極層及びドレイン電極層を形成し、
前記第1の加水分解基を有する有機シラン膜を除去し、
前記ゲート電極層、前記ソース電極層、及び前記ドレイン電極層上に第2の加水分解基を有する有機シラン膜を形成し、
前記第2の加水分解基を有する有機シラン膜上に半導体層を形成することを特徴とする半導体装置の作製方法。 - 請求項2において、前記第2の加水分解基を有する有機シラン膜をオクタデシルトリメトキシシランを用いて形成することを特徴とする半導体装置の作製方法。
- 請求項1乃至3のいずれか一項において、前記ソース電極層又は前記ドレイン電極層と電気的に接続する表示素子を形成することを特徴とする半導体装置の作製方法。
- 請求項1乃至4のいずれか一項において、前記半導体層は有機半導体材料を用いて形成することを特徴とする半導体装置の作製方法。
- 絶縁表面を有する基板上にゲート電極層と、前記ゲート電極層上に無機材料を含むゲート絶縁層と、前記無機材料を含むゲート絶縁層上のゲート電極層と重畳しない領域に有機重合層と、前記有機重合層上にソース電極層及びドレイン電極層と、前記無機材料を含むゲート絶縁層、前記ソース電極層、及び前記ドレイン電極層上に半導体層とを有することを特徴とする半導体装置。
- 絶縁表面を有する基板上にゲート電極層と、前記ゲート電極層上に無機材料を含むゲート絶縁層と、前記無機材料を含むゲート絶縁層上のゲート電極層と重畳しない領域に有機重合層と、前記有機重合層上にソース電極層及びドレイン電極層と、前記無機材料を含むゲート絶縁層、前記ソース電極層、及び前記ドレイン電極層上に加水分解基を有する有機シラン膜を介して半導体層とを有することを特徴とする半導体装置。
- 請求項7において、前記加水分解基を有する有機シラン膜はオクタデシルトリメトキシシラン膜であることを特徴とする半導体装置。
- 請求項6乃至8のいずれか一項において、前記ソース電極層又は前記ドレイン電極層と電気的に接続する表示素子を有することを特徴とする半導体装置。
- 請求項6乃至9のいずれか一項において、前記半導体層は有機半導体層であることを特徴とする半導体装置。
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