JP2008135517A - 基板処理装置の制御装置、制御方法および制御プログラムを記憶した記憶媒体 - Google Patents

基板処理装置の制御装置、制御方法および制御プログラムを記憶した記憶媒体 Download PDF

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Publication number
JP2008135517A
JP2008135517A JP2006319832A JP2006319832A JP2008135517A JP 2008135517 A JP2008135517 A JP 2008135517A JP 2006319832 A JP2006319832 A JP 2006319832A JP 2006319832 A JP2006319832 A JP 2006319832A JP 2008135517 A JP2008135517 A JP 2008135517A
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Japan
Prior art keywords
processing
substrate
unit
processing chamber
lot
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Pending
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JP2006319832A
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English (en)
Japanese (ja)
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JP2008135517A5 (enExample
Inventor
Masahiro Numakura
雅博 沼倉
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2006319832A priority Critical patent/JP2008135517A/ja
Priority to TW096144988A priority patent/TWI496230B/zh
Priority to US11/945,539 priority patent/US7738987B2/en
Priority to CN2007101946059A priority patent/CN101192055B/zh
Priority to KR1020070121461A priority patent/KR100980510B1/ko
Publication of JP2008135517A publication Critical patent/JP2008135517A/ja
Publication of JP2008135517A5 publication Critical patent/JP2008135517A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2006319832A 2006-11-28 2006-11-28 基板処理装置の制御装置、制御方法および制御プログラムを記憶した記憶媒体 Pending JP2008135517A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2006319832A JP2008135517A (ja) 2006-11-28 2006-11-28 基板処理装置の制御装置、制御方法および制御プログラムを記憶した記憶媒体
TW096144988A TWI496230B (zh) 2006-11-28 2007-11-27 A substrate processing apparatus, and a substrate processing apparatus
US11/945,539 US7738987B2 (en) 2006-11-28 2007-11-27 Device and method for controlling substrate processing apparatus
CN2007101946059A CN101192055B (zh) 2006-11-28 2007-11-27 基板处理装置的控制装置和控制方法
KR1020070121461A KR100980510B1 (ko) 2006-11-28 2007-11-27 기판 처리 장치의 제어 장치, 제어 방법 및 제어프로그램을 기억한 기억 매체

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006319832A JP2008135517A (ja) 2006-11-28 2006-11-28 基板処理装置の制御装置、制御方法および制御プログラムを記憶した記憶媒体

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012129085A Division JP5571122B2 (ja) 2012-06-06 2012-06-06 基板処理装置および基板処理装置の制御方法

Publications (2)

Publication Number Publication Date
JP2008135517A true JP2008135517A (ja) 2008-06-12
JP2008135517A5 JP2008135517A5 (enExample) 2009-11-19

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JP2006319832A Pending JP2008135517A (ja) 2006-11-28 2006-11-28 基板処理装置の制御装置、制御方法および制御プログラムを記憶した記憶媒体

Country Status (4)

Country Link
JP (1) JP2008135517A (enExample)
KR (1) KR100980510B1 (enExample)
CN (1) CN101192055B (enExample)
TW (1) TWI496230B (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011097023A (ja) * 2009-09-30 2011-05-12 Tokyo Electron Ltd 基板処理装置および基板搬送方法
WO2012026148A1 (en) * 2010-08-23 2012-03-01 Tokyo Electron Limited Separation system, separation method, program and computer storage medium
US9728431B2 (en) 2015-09-29 2017-08-08 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device
JP2018014427A (ja) * 2016-07-21 2018-01-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム
KR20180020902A (ko) * 2016-08-18 2018-02-28 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
KR101840578B1 (ko) 2014-01-20 2018-03-20 가부시키가이샤 스크린 홀딩스 기판 처리 방법 및 기판 처리 장치
KR20190010380A (ko) * 2017-07-20 2019-01-30 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 시스템, 반도체 장치의 제조 방법 및 기록 매체
KR20190074995A (ko) * 2017-12-20 2019-06-28 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
JP2019169663A (ja) * 2018-03-26 2019-10-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および記録媒体
WO2020008954A1 (ja) * 2018-07-04 2020-01-09 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8232212B2 (en) * 2008-07-11 2012-07-31 Applied Materials, Inc. Within-sequence metrology based process tuning for adaptive self-aligned double patterning
JP6600588B2 (ja) 2016-03-17 2019-10-30 東京エレクトロン株式会社 基板搬送機構の洗浄方法及び基板処理システム
JP7174581B2 (ja) * 2018-09-20 2022-11-17 株式会社Ｓｃｒｅｅｎホールディングス レシピ表示装置、レシピ表示方法、およびレシピ表示プログラム
CN118658815A (zh) * 2024-08-20 2024-09-17 中微半导体(上海)有限公司 用于半导体处理的装置、物理气相沉积设备及使用方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09260231A (ja) * 1996-03-25 1997-10-03 Nec Corp 生産制御システム及びその装置
JP2001257141A (ja) * 2000-03-10 2001-09-21 Mitsubishi Electric Corp プロセス制御装置およびプロセス制御方法
JP2003332405A (ja) * 2002-05-15 2003-11-21 Tokyo Electron Ltd 基板処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000003307A (ko) * 1998-06-27 2000-01-15 윤종용 반도체 제조설비 관리시스템의 로트 플로우 제어방법
JP4524720B2 (ja) * 1999-12-28 2010-08-18 ルネサスエレクトロニクス株式会社 プロセス制御装置
JP2002237507A (ja) * 2000-12-08 2002-08-23 Tokyo Electron Ltd 処理システム及び処理システムの被処理体の搬送方法
JP4566574B2 (ja) * 2004-02-13 2010-10-20 大日本スクリーン製造株式会社 基板処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09260231A (ja) * 1996-03-25 1997-10-03 Nec Corp 生産制御システム及びその装置
JP2001257141A (ja) * 2000-03-10 2001-09-21 Mitsubishi Electric Corp プロセス制御装置およびプロセス制御方法
JP2003332405A (ja) * 2002-05-15 2003-11-21 Tokyo Electron Ltd 基板処理装置

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011097023A (ja) * 2009-09-30 2011-05-12 Tokyo Electron Ltd 基板処理装置および基板搬送方法
WO2012026148A1 (en) * 2010-08-23 2012-03-01 Tokyo Electron Limited Separation system, separation method, program and computer storage medium
US9330898B2 (en) 2010-08-23 2016-05-03 Tokyo Electron Limited Separation system, separation method, program and computer storage medium
US10541163B2 (en) 2014-01-20 2020-01-21 SCREEN Holdings Co., Ltd. Substrate processing method and substrate processing apparatus
KR101840578B1 (ko) 2014-01-20 2018-03-20 가부시키가이샤 스크린 홀딩스 기판 처리 방법 및 기판 처리 장치
US9728431B2 (en) 2015-09-29 2017-08-08 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device
KR101961989B1 (ko) * 2016-07-21 2019-03-25 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법, 기록매체
JP2018014427A (ja) * 2016-07-21 2018-01-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム
KR20180010933A (ko) * 2016-07-21 2018-01-31 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치, 반도체 장치의 제조 방법, 기록매체
KR102030896B1 (ko) * 2016-08-18 2019-10-10 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
KR20180020902A (ko) * 2016-08-18 2018-02-28 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
CN107785288B (zh) * 2016-08-18 2021-07-20 株式会社斯库林集团 基板处理装置和基板处理方法
CN107785288A (zh) * 2016-08-18 2018-03-09 株式会社斯库林集团 基板处理装置和基板处理方法
TWI682432B (zh) * 2016-08-18 2020-01-11 斯庫林集團股份有限公司 基板處理裝置及基板處理方法
US10656524B2 (en) 2016-08-18 2020-05-19 SCREEN Holdings Co., Ltd. Substrate processing apparatus including transport device
US11726456B2 (en) 2017-07-20 2023-08-15 Kokusai Electric Corporation Substrate processing system
KR102019552B1 (ko) * 2017-07-20 2019-09-06 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 시스템, 반도체 장치의 제조 방법 및 기록 매체
KR20190010380A (ko) * 2017-07-20 2019-01-30 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 시스템, 반도체 장치의 제조 방법 및 기록 매체
US10671056B2 (en) 2017-07-20 2020-06-02 Kokusai Electric Corporation Substrate processing system
KR102276906B1 (ko) * 2017-12-20 2021-07-14 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
US11094572B2 (en) 2017-12-20 2021-08-17 Kokusai Electric Corporation Substrate processing apparatus and recording medium
KR20190074995A (ko) * 2017-12-20 2019-06-28 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
CN110364413A (zh) * 2018-03-26 2019-10-22 株式会社国际电气 基板处理系统、半导体装置的制造方法及记录介质
JP2019169663A (ja) * 2018-03-26 2019-10-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および記録媒体
CN110364413B (zh) * 2018-03-26 2024-01-09 株式会社国际电气 基板处理系统、半导体装置的制造方法及记录介质
JP2020009835A (ja) * 2018-07-04 2020-01-16 東京エレクトロン株式会社 基板処理方法及び基板処理装置
WO2020008954A1 (ja) * 2018-07-04 2020-01-09 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7137976B2 (ja) 2018-07-04 2022-09-15 東京エレクトロン株式会社 基板処理方法及び基板処理装置
TWI838381B (zh) * 2018-07-04 2024-04-11 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置

Also Published As

Publication number Publication date
TW200841412A (en) 2008-10-16
KR100980510B1 (ko) 2010-09-06
CN101192055A (zh) 2008-06-04
CN101192055B (zh) 2010-12-01
KR20080048410A (ko) 2008-06-02
TWI496230B (zh) 2015-08-11

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