TWI496230B - A substrate processing apparatus, and a substrate processing apparatus - Google Patents
A substrate processing apparatus, and a substrate processing apparatus Download PDFInfo
- Publication number
- TWI496230B TWI496230B TW096144988A TW96144988A TWI496230B TW I496230 B TWI496230 B TW I496230B TW 096144988 A TW096144988 A TW 096144988A TW 96144988 A TW96144988 A TW 96144988A TW I496230 B TWI496230 B TW I496230B
- Authority
- TW
- Taiwan
- Prior art keywords
- processing
- substrate
- unit
- processing chamber
- batch
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 394
- 239000000758 substrate Substances 0.000 title claims description 222
- 238000000034 method Methods 0.000 claims description 135
- 230000032258 transport Effects 0.000 claims description 114
- 230000008569 process Effects 0.000 claims description 112
- 238000012546 transfer Methods 0.000 claims description 22
- 230000007723 transport mechanism Effects 0.000 claims description 14
- 238000012360 testing method Methods 0.000 claims description 11
- 230000007246 mechanism Effects 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 description 127
- 230000006870 function Effects 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 7
- 238000004891 communication Methods 0.000 description 7
- 238000007726 management method Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 6
- FTGYKWAHGPIJIT-UHFFFAOYSA-N hydron;1-[2-[(2-hydroxy-3-phenoxypropyl)-methylamino]ethyl-methylamino]-3-phenoxypropan-2-ol;dichloride Chemical compound Cl.Cl.C=1C=CC=CC=1OCC(O)CN(C)CCN(C)CC(O)COC1=CC=CC=C1 FTGYKWAHGPIJIT-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 241001123248 Arma Species 0.000 description 3
- 101150080778 INPP5D gene Proteins 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006319832A JP2008135517A (ja) | 2006-11-28 | 2006-11-28 | 基板処理装置の制御装置、制御方法および制御プログラムを記憶した記憶媒体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200841412A TW200841412A (en) | 2008-10-16 |
| TWI496230B true TWI496230B (zh) | 2015-08-11 |
Family
ID=39487093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096144988A TWI496230B (zh) | 2006-11-28 | 2007-11-27 | A substrate processing apparatus, and a substrate processing apparatus |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2008135517A (enExample) |
| KR (1) | KR100980510B1 (enExample) |
| CN (1) | CN101192055B (enExample) |
| TW (1) | TWI496230B (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8232212B2 (en) * | 2008-07-11 | 2012-07-31 | Applied Materials, Inc. | Within-sequence metrology based process tuning for adaptive self-aligned double patterning |
| JP5469015B2 (ja) * | 2009-09-30 | 2014-04-09 | 東京エレクトロン株式会社 | 基板処理装置および基板搬送方法 |
| JP5374462B2 (ja) * | 2010-08-23 | 2013-12-25 | 東京エレクトロン株式会社 | 剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体 |
| WO2015107955A1 (ja) | 2014-01-20 | 2015-07-23 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP6089082B1 (ja) | 2015-09-29 | 2017-03-01 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体 |
| JP6600588B2 (ja) | 2016-03-17 | 2019-10-30 | 東京エレクトロン株式会社 | 基板搬送機構の洗浄方法及び基板処理システム |
| JP6403722B2 (ja) * | 2016-07-21 | 2018-10-10 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置、半導体装置の製造方法、プログラム |
| JP6723110B2 (ja) * | 2016-08-18 | 2020-07-15 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| JP6625098B2 (ja) | 2017-07-20 | 2019-12-25 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理システム、半導体装置の製造方法およびプログラム |
| CN109950187B (zh) * | 2017-12-20 | 2024-04-12 | 株式会社国际电气 | 基板处理装置、半导体装置的制造方法以及记录介质 |
| JP6704008B2 (ja) * | 2018-03-26 | 2020-06-03 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置、半導体装置の製造方法および記録媒体 |
| JP7137976B2 (ja) * | 2018-07-04 | 2022-09-15 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| JP7174581B2 (ja) * | 2018-09-20 | 2022-11-17 | 株式会社Ｓｃｒｅｅｎホールディングス | レシピ表示装置、レシピ表示方法、およびレシピ表示プログラム |
| CN118658815A (zh) * | 2024-08-20 | 2024-09-17 | 中微半导体(上海)有限公司 | 用于半导体处理的装置、物理气相沉积设备及使用方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003332405A (ja) * | 2002-05-15 | 2003-11-21 | Tokyo Electron Ltd | 基板処理装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2739858B2 (ja) * | 1996-03-25 | 1998-04-15 | 日本電気株式会社 | 生産制御システム及びその装置 |
| KR20000003307A (ko) * | 1998-06-27 | 2000-01-15 | 윤종용 | 반도체 제조설비 관리시스템의 로트 플로우 제어방법 |
| JP4524720B2 (ja) * | 1999-12-28 | 2010-08-18 | ルネサスエレクトロニクス株式会社 | プロセス制御装置 |
| JP2001257141A (ja) * | 2000-03-10 | 2001-09-21 | Mitsubishi Electric Corp | プロセス制御装置およびプロセス制御方法 |
| JP2002237507A (ja) * | 2000-12-08 | 2002-08-23 | Tokyo Electron Ltd | 処理システム及び処理システムの被処理体の搬送方法 |
| JP4566574B2 (ja) * | 2004-02-13 | 2010-10-20 | 大日本スクリーン製造株式会社 | 基板処理装置 |
-
2006
- 2006-11-28 JP JP2006319832A patent/JP2008135517A/ja active Pending
-
2007
- 2007-11-27 KR KR1020070121461A patent/KR100980510B1/ko active Active
- 2007-11-27 TW TW096144988A patent/TWI496230B/zh active
- 2007-11-27 CN CN2007101946059A patent/CN101192055B/zh not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003332405A (ja) * | 2002-05-15 | 2003-11-21 | Tokyo Electron Ltd | 基板処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101192055A (zh) | 2008-06-04 |
| KR20080048410A (ko) | 2008-06-02 |
| JP2008135517A (ja) | 2008-06-12 |
| CN101192055B (zh) | 2010-12-01 |
| KR100980510B1 (ko) | 2010-09-06 |
| TW200841412A (en) | 2008-10-16 |
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