JP2008130672A - 窒化物系半導体ヘテロ接合電界効果トランジスタ - Google Patents
窒化物系半導体ヘテロ接合電界効果トランジスタ Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 68
- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 230000005669 field effect Effects 0.000 title claims abstract description 33
- 239000012212 insulator Substances 0.000 claims description 26
- 150000002500 ions Chemical class 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 239000000460 chlorine Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000003870 refractory metal Substances 0.000 claims description 3
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 93
- 238000010586 diagram Methods 0.000 description 22
- 238000009826 distribution Methods 0.000 description 16
- 230000000694 effects Effects 0.000 description 12
- 230000005533 two-dimensional electron gas Effects 0.000 description 9
- 230000010287 polarization Effects 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
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- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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Abstract
【解決手段】負の電荷を有する第三の層である浮遊ゲート層(32)が制御ゲート電極(34)とAlGaN 層(11)との間に設けられているので、実質的に浮遊ゲート層(32)に隣接するAlGaN 層(11)の電子に対するポテンシャルを実質的に高くし、チャンネルを空乏化する。これにより、ゲート電圧がゼロの時チャンネルに電流(ドレイン電流)を流れなくする、即ちいわゆるノーマリオフ動作を達成することが出来る。
【選択図】図1
Description
M. A. Kahn 他著、Applied Physics Letter, 68巻、4号、1996年1月、514〜516頁 Yong Cai 他著、IEEE ELECTRON DEVICE LETTERS, 26巻, 7号, 2005年7月、435〜437頁
図1は、第1実施形態に係るAlGaN/GaN系HFET(1)の概略構成を示している。
AlGaN/GaN系HFET(1)は、サファイア基板(9)と、このサファイア基板(9)上に形成されたGaN層(10)と、このGaN層(10)上に形成されたAlGaN 層(11)と、ソース電極(21)と、ドレイン電極(22)とを備える。ソース電極(21)とドレイン電極(22)との間の動作領域上には、触媒化学気相堆積法(Catalytic Chemical Vapor Deposition: Cat CVD)により、窒化Si膜(SiNx )(31)が堆積されている。
図8は、第2実施形態に係るAlGaN/GaN系HFET(1A)の概略構成を示している。
このAlGaN/GaN系HFET(1A)では、通常のAlGaN(11)/GaN(10)系HFET の動作領域上に触媒化学気相堆積法(Catalytic Chemical Vapor Deposition: Cat CVD)により、窒化Si膜(SiNx) (31)を堆積していることは第1実施形態と同じである。
22…ドレイン電極、31…窒化Si膜層、32…浮遊ゲート層、33…酸化Siの絶縁体層、
34…制御ゲート電極、
312…窒化Si膜のCl- などの負のイオンが添加されている領域、
41…AlGaN層に分極により生じた正の電荷、42…AlGaN層に分極により生じた負の電荷、
410…GaN層に生ずる負の電荷、
411…仕事関数差によりGaN層に誘起された正の電荷、
431…仕事関数差により制御ゲート電極に誘起された負の電荷、
432…浮遊ゲート層に付与された負の電荷、
510…GaN層から見たAlGaN層の障壁の高さ、534…正のゲートバイアス電圧。
Claims (9)
- 窒化物系半導体のヘテロ接合界面をチャンネルとする窒化物系半導体ヘテロ接合電界効果トランジスタにおいて、
制御ゲート電極と窒化物系半導体の間に、負の電荷を有する第三の層を有することを特徴とする窒化物系半導体ヘテロ接合電界効果トランジスタ。 - 負の電荷を有する第三の層が電子により負に帯電した導電体層よりなり、該導電体層が絶縁体層により覆われていることを特徴とする請求項1に記載の窒化物系半導体ヘテロ接合電界効果トランジスタ。
- 負の電荷を有する第三の層が低抵抗ポリSiであることを特徴とする請求項2に記載の窒化物系半導体ヘテロ接合電界効果トランジスタ。
- 負の電荷を有する第三の層がMo等の高融点金属であることを特徴とする請求項2に記載の窒化物系半導体ヘテロ接合電界効果トランジスタ。
- 負の電荷を有する第三の層を覆う絶縁体層が、2種類の異なる誘電体層からなることを特徴とする請求項2に記載の窒化物系半導体ヘテロ接合電界効果トランジスタ。
- 負の電荷を有する第三の層を覆う絶縁体層の内の、窒化物系半導体に接する側の誘電体層が窒化Si膜であることを特徴とする請求項5に記載の窒化物系半導体ヘテロ接合電界効果トランジスタ。
- 負の電荷を有する第三の層が、負のイオンを含んだ絶縁体層よりなることを特徴とする請求項1に記載の窒化物系半導体ヘテロ接合電界効果トランジスタ。
- 負のイオンが塩素Cl- であることを特徴とする請求項7に記載の窒化物系半導体ヘテロ接合電界効果トランジスタ。
- 負のイオンを含んだ絶縁体層が窒化Si膜であることを特徴とする請求項7に記載の窒化物系半導体ヘテロ接合電界効果トランジスタ。
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JP2006311782A JP5192683B2 (ja) | 2006-11-17 | 2006-11-17 | 窒化物系半導体ヘテロ接合電界効果トランジスタ |
US11/941,584 US7723752B2 (en) | 2006-11-17 | 2007-11-16 | Nitride semiconductor heterojunction field effect transistor |
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JP2010067816A (ja) * | 2008-09-11 | 2010-03-25 | Toshiba Corp | 半導体装置 |
JP2011014789A (ja) * | 2009-07-03 | 2011-01-20 | Furukawa Electric Co Ltd:The | 窒化物系半導体電界効果トランジスタ |
JP2011199286A (ja) * | 2010-03-22 | 2011-10-06 | Internatl Rectifier Corp | アルミニウムドープゲートを備えるプログラマブルiii−窒化物トランジスタ |
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JP2012227490A (ja) * | 2011-04-22 | 2012-11-15 | Toyota Central R&D Labs Inc | 半導体装置とその製造方法 |
CN102420247A (zh) * | 2011-11-18 | 2012-04-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Ⅲ族氮化物hemt器件 |
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JP2016058622A (ja) * | 2014-09-11 | 2016-04-21 | 株式会社デンソー | 半導体装置 |
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JP2020198328A (ja) * | 2019-05-30 | 2020-12-10 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
JP7398885B2 (ja) | 2019-05-30 | 2023-12-15 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
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