JP2012523702A - GaNバッファ層におけるドーパント拡散変調 - Google Patents
GaNバッファ層におけるドーパント拡散変調 Download PDFInfo
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- JP2012523702A JP2012523702A JP2012504808A JP2012504808A JP2012523702A JP 2012523702 A JP2012523702 A JP 2012523702A JP 2012504808 A JP2012504808 A JP 2012504808A JP 2012504808 A JP2012504808 A JP 2012504808A JP 2012523702 A JP2012523702 A JP 2012523702A
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- 239000002019 doping agent Substances 0.000 title claims abstract description 15
- 239000000872 buffer Substances 0.000 title description 15
- 238000009792 diffusion process Methods 0.000 title description 4
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 150000003624 transition metals Chemical class 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 claims 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims 1
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 claims 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims 1
- 239000011777 magnesium Substances 0.000 description 46
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 44
- 229910002601 GaN Inorganic materials 0.000 description 42
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000010936 titanium Substances 0.000 description 9
- 239000010931 gold Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- -1 magnesium nitride Chemical class 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910017967 MgN Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (8)
- 基板と、
前記基板上の一組の遷移層と、
前記一組の遷移層上の、変調され且つ低下された密度でドーパント原子を含有するIII−N化合物と、
を有する半導体結晶。 - 前記ドーパント原子は、Mg、Fe、Ni、Mn、Ca、V及びその他の遷移金属からなる群から選択されている、請求項1に記載の半導体結晶。
- Mgを含まないGaN材料を成長する工程と、
アンモニア又はその他の活性窒素源の供給を管理しながら、Ga含有材料の供給を停止する工程と、
その後、Gaの供給を開始する工程と、
を有する半導体結晶を製造する方法。 - 前記工程群が複数回繰り返される、請求項3に記載の方法。
- ドーパント及びIII族元素を含有するガスのフローを供給する工程と、
前記ドーパント及びIII族元素を含有するガスのフローを停止する工程と、
温度を低下させる工程と、
III族元素を含有するガスのフローを再開する工程と、
温度を上昇させる工程と、
を有する半導体結晶を製造する方法。 - ガスの中断、温度低下、ガスの再導入及び温度上昇のシーケンスが複数回繰り返される、請求項5に記載の方法。
- 前記III族元素を含有するガスは、トリメチルガリウム、トリメチルアルミニウム、トリエチルガリウム、トリエチルアルミニウム及びトリエチルインジウムのうちの1つ以上の混合物である、請求項5に記載の方法。
- 前記ドーパント原子は、Mg、Fe、Ni、Mn、Ca、V及びその他の遷移金属からなる群から選択される、請求項5に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16782009P | 2009-04-08 | 2009-04-08 | |
US61/167,820 | 2009-04-08 | ||
PCT/US2010/030194 WO2010118101A1 (en) | 2009-04-08 | 2010-04-07 | Dopant diffusion modulation in gan buffer layers |
Publications (2)
Publication Number | Publication Date |
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JP2012523702A true JP2012523702A (ja) | 2012-10-04 |
JP5670427B2 JP5670427B2 (ja) | 2015-02-18 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012504808A Active JP5670427B2 (ja) | 2009-04-08 | 2010-04-07 | GaNバッファ層におけるドーパント拡散変調 |
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US (1) | US8431960B2 (ja) |
JP (1) | JP5670427B2 (ja) |
KR (1) | KR101620987B1 (ja) |
CN (1) | CN102365763B (ja) |
DE (1) | DE112010001557T5 (ja) |
HK (1) | HK1165614A1 (ja) |
TW (1) | TWI409859B (ja) |
WO (1) | WO2010118101A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012060110A (ja) * | 2010-08-11 | 2012-03-22 | Sumitomo Chemical Co Ltd | 半導体基板、半導体デバイスおよび半導体基板の製造方法 |
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JP5562579B2 (ja) * | 2009-05-12 | 2014-07-30 | 日本碍子株式会社 | 半導体素子用エピタキシャル基板の作製方法 |
US8686562B2 (en) | 2009-08-25 | 2014-04-01 | International Rectifier Corporation | Refractory metal nitride capped electrical contact and method for frabricating same |
US9299821B2 (en) | 2010-06-23 | 2016-03-29 | Cornell University | Gated III-V semiconductor structure and method |
JP2012019069A (ja) * | 2010-07-08 | 2012-01-26 | Toshiba Corp | 電界効果トランジスタおよび電界効果トランジスタの製造方法 |
KR101720589B1 (ko) * | 2010-10-11 | 2017-03-30 | 삼성전자주식회사 | 이 모드(E-mode) 고 전자 이동도 트랜지스터 및 그 제조방법 |
US20120126239A1 (en) * | 2010-11-24 | 2012-05-24 | Transphorm Inc. | Layer structures for controlling stress of heteroepitaxially grown iii-nitride layers |
US8742460B2 (en) | 2010-12-15 | 2014-06-03 | Transphorm Inc. | Transistors with isolation regions |
US8643062B2 (en) | 2011-02-02 | 2014-02-04 | Transphorm Inc. | III-N device structures and methods |
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CN102365763B (zh) | 2015-04-22 |
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JP5670427B2 (ja) | 2015-02-18 |
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WO2010118101A1 (en) | 2010-10-14 |
US8431960B2 (en) | 2013-04-30 |
CN102365763A (zh) | 2012-02-29 |
HK1165614A1 (en) | 2012-10-05 |
KR101620987B1 (ko) | 2016-05-13 |
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