JP2008129314A5 - - Google Patents
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- Publication number
- JP2008129314A5 JP2008129314A5 JP2006314064A JP2006314064A JP2008129314A5 JP 2008129314 A5 JP2008129314 A5 JP 2008129314A5 JP 2006314064 A JP2006314064 A JP 2006314064A JP 2006314064 A JP2006314064 A JP 2006314064A JP 2008129314 A5 JP2008129314 A5 JP 2008129314A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- image display
- manufacturing
- electrode
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims 37
- 239000010410 layer Substances 0.000 claims 17
- 238000004519 manufacturing process Methods 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 9
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 239000010409 thin film Substances 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 5
- 239000011229 interlayer Substances 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 239000004973 liquid crystal related substance Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910000583 Nd alloy Inorganic materials 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000003990 capacitor Substances 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 1
- 229910001887 tin oxide Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006314064A JP2008129314A (ja) | 2006-11-21 | 2006-11-21 | 画像表示装置およびその製造方法 |
| CN200710165842.2A CN101187764A (zh) | 2006-11-21 | 2007-11-05 | 图像显示装置及其制造方法 |
| US11/979,515 US20080119018A1 (en) | 2006-11-21 | 2007-11-05 | Image display unit and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006314064A JP2008129314A (ja) | 2006-11-21 | 2006-11-21 | 画像表示装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008129314A JP2008129314A (ja) | 2008-06-05 |
| JP2008129314A5 true JP2008129314A5 (https=) | 2009-08-06 |
Family
ID=39417425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006314064A Pending JP2008129314A (ja) | 2006-11-21 | 2006-11-21 | 画像表示装置およびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20080119018A1 (https=) |
| JP (1) | JP2008129314A (https=) |
| CN (1) | CN101187764A (https=) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100908236B1 (ko) * | 2008-04-24 | 2009-07-20 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 및 그 제조방법 |
| JP4844617B2 (ja) * | 2008-11-05 | 2011-12-28 | ソニー株式会社 | 薄膜トランジスタ基板および表示装置 |
| US20120068202A1 (en) * | 2009-03-23 | 2012-03-22 | Seiko Epson Corporation | Active matrix substrate, method of manufacturing the same and display equipment using active matrix substrate manufactured by the same method |
| WO2011007677A1 (en) * | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR101739154B1 (ko) * | 2009-07-17 | 2017-05-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| KR101981441B1 (ko) * | 2009-07-31 | 2019-05-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR102057299B1 (ko) * | 2009-07-31 | 2019-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 및 그 형성 방법 |
| TWI604594B (zh) * | 2009-08-07 | 2017-11-01 | 半導體能源研究所股份有限公司 | 半導體裝置及包括該半導體裝置之電話、錶、和顯示裝置 |
| WO2011027701A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
| WO2011027676A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2011027664A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
| WO2011043194A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR101591613B1 (ko) * | 2009-10-21 | 2016-02-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN102598280B (zh) | 2009-10-21 | 2016-05-18 | 株式会社半导体能源研究所 | 液晶显示器件及包括该液晶显示器件的电子设备 |
| WO2011048923A1 (en) * | 2009-10-21 | 2011-04-28 | Semiconductor Energy Laboratory Co., Ltd. | E-book reader |
| CN102612741B (zh) * | 2009-11-06 | 2014-11-12 | 株式会社半导体能源研究所 | 半导体装置 |
| KR101117642B1 (ko) * | 2009-11-16 | 2012-03-05 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| JP5095864B2 (ja) * | 2009-12-09 | 2012-12-12 | シャープ株式会社 | 半導体装置およびその製造方法 |
| KR101084183B1 (ko) * | 2010-01-06 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 및 그 제조방법 |
| JP5852793B2 (ja) * | 2010-05-21 | 2016-02-03 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| KR101711191B1 (ko) * | 2010-10-28 | 2017-03-02 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
| US9035298B2 (en) * | 2010-12-01 | 2015-05-19 | Sharp Kabushiki Kaisha | Semiconductor device, TFT substrate, and method for manufacturing semiconductor device and TFT substrate |
| KR101781532B1 (ko) * | 2011-03-14 | 2017-10-24 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치와 그 제조방법 |
| KR102072244B1 (ko) * | 2011-11-30 | 2020-01-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| US9419146B2 (en) | 2012-01-26 | 2016-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| EP2916310B1 (en) * | 2012-10-31 | 2017-05-31 | Sharp Kabushiki Kaisha | Electroluminescent substrate, method for producing same and electroluminescent display panel |
| JP6300589B2 (ja) * | 2013-04-04 | 2018-03-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR102294507B1 (ko) * | 2013-09-06 | 2021-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP2015115469A (ja) * | 2013-12-12 | 2015-06-22 | ソニー株式会社 | 薄膜トランジスタ、表示装置、電子機器、および薄膜トランジスタの製造方法 |
| JP6506545B2 (ja) | 2013-12-27 | 2019-04-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9577110B2 (en) * | 2013-12-27 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including an oxide semiconductor and the display device including the semiconductor device |
| CN103715267A (zh) * | 2013-12-30 | 2014-04-09 | 京东方科技集团股份有限公司 | 薄膜晶体管、tft阵列基板及其制造方法和显示装置 |
| CN107850963B (zh) * | 2015-07-22 | 2020-11-17 | 夏普株式会社 | 具有触摸面板的显示装置以及其制造方法 |
| CN113711295A (zh) | 2019-05-10 | 2021-11-26 | 株式会社半导体能源研究所 | 显示装置以及电子设备 |
| CN115699140B (zh) * | 2020-06-18 | 2024-12-20 | 日亚化学工业株式会社 | 图像显示装置的制造方法以及图像显示装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6431457A (en) * | 1987-07-28 | 1989-02-01 | Nippon Sheet Glass Co Ltd | Manufacture of thin film transistor |
| JP2771820B2 (ja) * | 1988-07-08 | 1998-07-02 | 株式会社日立製作所 | アクティブマトリクスパネル及びその製造方法 |
| JP2639356B2 (ja) * | 1994-09-01 | 1997-08-13 | 日本電気株式会社 | 薄膜トランジスタの製造方法 |
| TWI226470B (en) * | 1998-01-19 | 2005-01-11 | Hitachi Ltd | LCD device |
| JP3420135B2 (ja) * | 1999-10-26 | 2003-06-23 | 日本電気株式会社 | アクティブマトリクス基板の製造方法 |
| US6838696B2 (en) * | 2000-03-15 | 2005-01-04 | Advanced Display Inc. | Liquid crystal display |
| JP2002141512A (ja) * | 2000-11-06 | 2002-05-17 | Advanced Display Inc | 薄膜のパターニング方法およびそれを用いたｔｆｔアレイ基板およびその製造方法 |
| JP4678933B2 (ja) * | 2000-11-07 | 2011-04-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2005011920A (ja) * | 2003-06-18 | 2005-01-13 | Hitachi Displays Ltd | 表示装置とその製造方法 |
| JP4737971B2 (ja) * | 2003-11-14 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 液晶表示装置および液晶表示装置の作製方法 |
-
2006
- 2006-11-21 JP JP2006314064A patent/JP2008129314A/ja active Pending
-
2007
- 2007-11-05 CN CN200710165842.2A patent/CN101187764A/zh active Pending
- 2007-11-05 US US11/979,515 patent/US20080119018A1/en not_active Abandoned
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