CN101187764A - 图像显示装置及其制造方法 - Google Patents

图像显示装置及其制造方法 Download PDF

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Publication number
CN101187764A
CN101187764A CN200710165842.2A CN200710165842A CN101187764A CN 101187764 A CN101187764 A CN 101187764A CN 200710165842 A CN200710165842 A CN 200710165842A CN 101187764 A CN101187764 A CN 101187764A
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CN
China
Prior art keywords
mentioned
film
electrode
display device
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200710165842.2A
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English (en)
Chinese (zh)
Inventor
丰田善章
佐藤健史
秋元肇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Hitachi Displays Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Displays Ltd filed Critical Hitachi Displays Ltd
Publication of CN101187764A publication Critical patent/CN101187764A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
CN200710165842.2A 2006-11-21 2007-11-05 图像显示装置及其制造方法 Pending CN101187764A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP314064/2006 2006-11-21
JP2006314064A JP2008129314A (ja) 2006-11-21 2006-11-21 画像表示装置およびその製造方法

Publications (1)

Publication Number Publication Date
CN101187764A true CN101187764A (zh) 2008-05-28

Family

ID=39417425

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200710165842.2A Pending CN101187764A (zh) 2006-11-21 2007-11-05 图像显示装置及其制造方法

Country Status (3)

Country Link
US (1) US20080119018A1 (https=)
JP (1) JP2008129314A (https=)
CN (1) CN101187764A (https=)

Cited By (5)

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CN102117824A (zh) * 2010-01-06 2011-07-06 三星移动显示器株式会社 有机发光显示设备及其制造方法
CN102388413A (zh) * 2009-03-23 2012-03-21 夏普株式会社 有源矩阵基板及其制造方法以及使用由该方法所制造的有源矩阵基板的显示设备
CN105070761A (zh) * 2009-07-31 2015-11-18 株式会社半导体能源研究所 显示装置
CN107850963A (zh) * 2015-07-22 2018-03-27 夏普株式会社 具有触摸面板的显示装置以及其制造方法
CN115699140A (zh) * 2020-06-18 2023-02-03 日亚化学工业株式会社 图像显示装置的制造方法以及图像显示装置

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KR100908236B1 (ko) * 2008-04-24 2009-07-20 삼성모바일디스플레이주식회사 유기 발광 디스플레이 장치 및 그 제조방법
JP4844617B2 (ja) * 2008-11-05 2011-12-28 ソニー株式会社 薄膜トランジスタ基板および表示装置
WO2011007677A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101739154B1 (ko) * 2009-07-17 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR102057299B1 (ko) * 2009-07-31 2019-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스 및 그 형성 방법
TWI604594B (zh) * 2009-08-07 2017-11-01 半導體能源研究所股份有限公司 半導體裝置及包括該半導體裝置之電話、錶、和顯示裝置
WO2011027701A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
WO2011027676A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011027664A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
WO2011043194A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101591613B1 (ko) * 2009-10-21 2016-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102598280B (zh) 2009-10-21 2016-05-18 株式会社半导体能源研究所 液晶显示器件及包括该液晶显示器件的电子设备
WO2011048923A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
CN102612741B (zh) * 2009-11-06 2014-11-12 株式会社半导体能源研究所 半导体装置
KR101117642B1 (ko) * 2009-11-16 2012-03-05 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
JP5095864B2 (ja) * 2009-12-09 2012-12-12 シャープ株式会社 半導体装置およびその製造方法
JP5852793B2 (ja) * 2010-05-21 2016-02-03 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
KR101711191B1 (ko) * 2010-10-28 2017-03-02 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조방법
US9035298B2 (en) * 2010-12-01 2015-05-19 Sharp Kabushiki Kaisha Semiconductor device, TFT substrate, and method for manufacturing semiconductor device and TFT substrate
KR101781532B1 (ko) * 2011-03-14 2017-10-24 삼성디스플레이 주식회사 유기 발광 표시 장치와 그 제조방법
KR102072244B1 (ko) * 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US9419146B2 (en) 2012-01-26 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP2916310B1 (en) * 2012-10-31 2017-05-31 Sharp Kabushiki Kaisha Electroluminescent substrate, method for producing same and electroluminescent display panel
JP6300589B2 (ja) * 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102294507B1 (ko) * 2013-09-06 2021-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2015115469A (ja) * 2013-12-12 2015-06-22 ソニー株式会社 薄膜トランジスタ、表示装置、電子機器、および薄膜トランジスタの製造方法
JP6506545B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 半導体装置
US9577110B2 (en) * 2013-12-27 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
CN103715267A (zh) * 2013-12-30 2014-04-09 京东方科技集团股份有限公司 薄膜晶体管、tft阵列基板及其制造方法和显示装置
CN113711295A (zh) 2019-05-10 2021-11-26 株式会社半导体能源研究所 显示装置以及电子设备

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JPS6431457A (en) * 1987-07-28 1989-02-01 Nippon Sheet Glass Co Ltd Manufacture of thin film transistor
JP2771820B2 (ja) * 1988-07-08 1998-07-02 株式会社日立製作所 アクティブマトリクスパネル及びその製造方法
JP2639356B2 (ja) * 1994-09-01 1997-08-13 日本電気株式会社 薄膜トランジスタの製造方法
TWI226470B (en) * 1998-01-19 2005-01-11 Hitachi Ltd LCD device
JP3420135B2 (ja) * 1999-10-26 2003-06-23 日本電気株式会社 アクティブマトリクス基板の製造方法
US6838696B2 (en) * 2000-03-15 2005-01-04 Advanced Display Inc. Liquid crystal display
JP2002141512A (ja) * 2000-11-06 2002-05-17 Advanced Display Inc 薄膜のパターニング方法およびそれを用いたｔｆｔアレイ基板およびその製造方法
JP4678933B2 (ja) * 2000-11-07 2011-04-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2005011920A (ja) * 2003-06-18 2005-01-13 Hitachi Displays Ltd 表示装置とその製造方法
JP4737971B2 (ja) * 2003-11-14 2011-08-03 株式会社半導体エネルギー研究所 液晶表示装置および液晶表示装置の作製方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102388413A (zh) * 2009-03-23 2012-03-21 夏普株式会社 有源矩阵基板及其制造方法以及使用由该方法所制造的有源矩阵基板的显示设备
US10396097B2 (en) 2009-07-31 2019-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device
CN105070761A (zh) * 2009-07-31 2015-11-18 株式会社半导体能源研究所 显示装置
US20180138211A1 (en) 2009-07-31 2018-05-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device
US10854638B2 (en) 2009-07-31 2020-12-01 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing display device
US11348949B2 (en) 2009-07-31 2022-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11728350B2 (en) 2009-07-31 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor
US12183743B2 (en) 2009-07-31 2024-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102117824B (zh) * 2010-01-06 2015-05-20 三星显示有限公司 有机发光显示设备及其制造方法
CN102117824A (zh) * 2010-01-06 2011-07-06 三星移动显示器株式会社 有机发光显示设备及其制造方法
CN107850963A (zh) * 2015-07-22 2018-03-27 夏普株式会社 具有触摸面板的显示装置以及其制造方法
CN115699140A (zh) * 2020-06-18 2023-02-03 日亚化学工业株式会社 图像显示装置的制造方法以及图像显示装置
CN115699140B (zh) * 2020-06-18 2024-12-20 日亚化学工业株式会社 图像显示装置的制造方法以及图像显示装置
TWI900576B (zh) * 2020-06-18 2025-10-11 日商日亞化學工業股份有限公司 圖像顯示裝置之製造方法及圖像顯示裝置

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JP2008129314A (ja) 2008-06-05
US20080119018A1 (en) 2008-05-22

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Open date: 20080528