CN1328621C - 电路阵列基板 - Google Patents
电路阵列基板 Download PDFInfo
- Publication number
- CN1328621C CN1328621C CNB2004100642283A CN200410064228A CN1328621C CN 1328621 C CN1328621 C CN 1328621C CN B2004100642283 A CNB2004100642283 A CN B2004100642283A CN 200410064228 A CN200410064228 A CN 200410064228A CN 1328621 C CN1328621 C CN 1328621C
- Authority
- CN
- China
- Prior art keywords
- semiconductor layer
- array substrate
- circuit array
- gate line
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 94
- 239000004065 semiconductor Substances 0.000 claims abstract description 97
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 49
- 239000003990 capacitor Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 17
- 239000010408 film Substances 0.000 claims description 78
- 239000010409 thin film Substances 0.000 claims description 44
- 229920005591 polysilicon Polymers 0.000 claims description 40
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 8
- 238000009413 insulation Methods 0.000 abstract description 8
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 88
- 239000011229 interlayer Substances 0.000 description 21
- 239000004973 liquid crystal related substance Substances 0.000 description 20
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 230000003068 static effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000005686 electrostatic field Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003294584A JP4381063B2 (ja) | 2003-08-18 | 2003-08-18 | アレイ基板および平面表示装置 |
JP2003294584 | 2003-08-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1584686A CN1584686A (zh) | 2005-02-23 |
CN1328621C true CN1328621C (zh) | 2007-07-25 |
Family
ID=34191047
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100642283A Expired - Fee Related CN1328621C (zh) | 2003-08-18 | 2004-08-18 | 电路阵列基板 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7064351B2 (zh) |
JP (1) | JP4381063B2 (zh) |
KR (1) | KR100605437B1 (zh) |
CN (1) | CN1328621C (zh) |
SG (1) | SG109547A1 (zh) |
TW (1) | TWI249855B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4988258B2 (ja) * | 2006-06-27 | 2012-08-01 | 三菱電機株式会社 | 液晶表示装置及びその駆動方法 |
GB2466213B (en) * | 2008-12-12 | 2013-03-06 | Cmosis Nv | Pixel array with shared readout circuitry |
KR101362467B1 (ko) * | 2012-07-10 | 2014-02-12 | 연세대학교 산학협력단 | 투명 전자파 차폐재 및 이를 포함하는 디스플레이 장치 |
JP5997958B2 (ja) | 2012-07-23 | 2016-09-28 | 株式会社ジャパンディスプレイ | 表示装置及びアレイ基板 |
US8937307B2 (en) * | 2012-08-10 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN106684093B (zh) | 2016-07-20 | 2019-07-12 | 京东方科技集团股份有限公司 | 显示基板及其制造方法、以及显示装置 |
CN108490709B (zh) * | 2018-03-29 | 2021-06-01 | 武汉华星光电技术有限公司 | 阵列基板及其制作方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1251914A (zh) * | 1998-10-01 | 2000-05-03 | 三星电子株式会社 | 液晶显示器用薄膜晶体管阵列基板及其制造方法 |
US6195140B1 (en) * | 1997-07-28 | 2001-02-27 | Sharp Kabushiki Kaisha | Liquid crystal display in which at least one pixel includes both a transmissive region and a reflective region |
US20020142554A1 (en) * | 1998-11-17 | 2002-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for production thereof |
CN1373886A (zh) * | 1999-09-08 | 2002-10-09 | 松下电器产业株式会社 | 电路基板、使用该基板的tft阵列基板及液晶显示装置 |
US20020180901A1 (en) * | 2001-06-05 | 2002-12-05 | Lg.Philips Lcd Co., Ltd. | Array substrate of liquid crystal display and fabricating method thereof |
CN1400670A (zh) * | 2001-08-08 | 2003-03-05 | 瀚宇彩晶股份有限公司 | 薄膜晶体管阵列基板结构 |
JP2003066489A (ja) * | 2001-08-20 | 2003-03-05 | Samsung Electronics Co Ltd | 液晶表示装置用薄膜トランジスタ基板及びその製造方法 |
US20030136971A1 (en) * | 2001-12-24 | 2003-07-24 | Samsung Electronics Co., Ltd. | Thin film transistor array panel for display and manufacturing method thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3076030B2 (ja) | 1998-07-14 | 2000-08-14 | 東芝電子エンジニアリング株式会社 | アクティブマトリクス型液晶表示装置 |
NL1015202C2 (nl) * | 1999-05-20 | 2002-03-26 | Nec Corp | Actieve matrixvormige vloeiend-kristal displayinrichting. |
-
2003
- 2003-08-18 JP JP2003294584A patent/JP4381063B2/ja not_active Expired - Lifetime
-
2004
- 2004-07-16 SG SG200404390A patent/SG109547A1/en unknown
- 2004-07-21 TW TW093121763A patent/TWI249855B/zh active
- 2004-08-05 US US10/911,600 patent/US7064351B2/en active Active
- 2004-08-17 KR KR1020040064647A patent/KR100605437B1/ko active IP Right Grant
- 2004-08-18 CN CNB2004100642283A patent/CN1328621C/zh not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6195140B1 (en) * | 1997-07-28 | 2001-02-27 | Sharp Kabushiki Kaisha | Liquid crystal display in which at least one pixel includes both a transmissive region and a reflective region |
CN1251914A (zh) * | 1998-10-01 | 2000-05-03 | 三星电子株式会社 | 液晶显示器用薄膜晶体管阵列基板及其制造方法 |
US20020142554A1 (en) * | 1998-11-17 | 2002-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for production thereof |
CN1373886A (zh) * | 1999-09-08 | 2002-10-09 | 松下电器产业株式会社 | 电路基板、使用该基板的tft阵列基板及液晶显示装置 |
US20020180901A1 (en) * | 2001-06-05 | 2002-12-05 | Lg.Philips Lcd Co., Ltd. | Array substrate of liquid crystal display and fabricating method thereof |
CN1400670A (zh) * | 2001-08-08 | 2003-03-05 | 瀚宇彩晶股份有限公司 | 薄膜晶体管阵列基板结构 |
JP2003066489A (ja) * | 2001-08-20 | 2003-03-05 | Samsung Electronics Co Ltd | 液晶表示装置用薄膜トランジスタ基板及びその製造方法 |
US20030136971A1 (en) * | 2001-12-24 | 2003-07-24 | Samsung Electronics Co., Ltd. | Thin film transistor array panel for display and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
CN1584686A (zh) | 2005-02-23 |
JP2005064338A (ja) | 2005-03-10 |
SG109547A1 (en) | 2005-03-30 |
US20050042817A1 (en) | 2005-02-24 |
TW200524165A (en) | 2005-07-16 |
TWI249855B (en) | 2006-02-21 |
KR100605437B1 (ko) | 2006-07-28 |
US7064351B2 (en) | 2006-06-20 |
JP4381063B2 (ja) | 2009-12-09 |
KR20050020645A (ko) | 2005-03-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: JAPAN DISPLAY MIDDLE INC. Free format text: FORMER NAME: TOSHIBA MOBILE DISPLAY CO., LTD. Owner name: TOSHIBA MOBILE DISPLAY CO., LTD. Free format text: FORMER NAME: TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Saitama Prefecture, Japan Patentee after: JAPAN DISPLAY Inc. Address before: Saitama Prefecture, Japan Patentee before: Toshiba Mobile Display Co.,Ltd. |
|
CP03 | Change of name, title or address |
Address after: Saitama Prefecture, Japan Patentee after: Toshiba Mobile Display Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070725 Termination date: 20200818 |
|
CF01 | Termination of patent right due to non-payment of annual fee |