JP2008108417A - 低電力dram及びその駆動方法 - Google Patents
低電力dram及びその駆動方法 Download PDFInfo
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4082—Address Buffers; level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2245—Memory devices with an internal cache buffer
Abstract
【解決手段】本発明では、ローアドレス及びカラムアドレスを全て受信して格納した後、カラムアドレスのMSB(Most Significant Bit)のうち、一部のビットをデコードして、アクティブにするページ領域を決定する方式を採用した。すなわち、ローアドレスに対応する1ページ全体をアクティブにするものではなく、実際にアクセスがなされるメモリセルを含む一部のページ領域を選択的にアクティブにする。近年、システムのメモリ活用機能のうち、付加レイテンシAL(Additive Latency)規格によると、ローアドレスの入力後、次のクロックで直ちにカラムアドレスの入力がなされ、その後、ローアドレス及びカラムアドレスのデコードが可能となって、システムの環境を大きく変えなくとも本発明の実現が可能である。
【選択図】図1
Description
70 HITブロック
Claims (12)
- RAS信号に応答してローアドレスをラッチし、CAS信号に応答してカラムアドレスをラッチするアドレスラッチ手段と、
前記ローアドレスをデコードするローデコード手段と、
前記カラムアドレスのMSB(Most Significant Bit)のうち一部のビットをデコードして、前記ローアドレスに対応する1つのページ領域のうち、一部の領域を局部的にアクティブにする手段と、
前記カラムアドレスをデコードするカラムデコード手段と
を備えることを特徴とするDRAM。 - 前記アドレスラッチ手段が、
付加レイテンシ規格を支援する遅延手段を備えることを特徴とする請求項1に記載のDRAM。 - RAS信号に応答してローアドレスをラッチし、CAS信号に応答してカラムアドレスをラッチするアドレスラッチ手段と、
前記ローアドレスをデコードするローデコード手段と、
前記カラムアドレスのMSB(Most Significant Bit)のうち、一部のビットをデコードして、ページ領域選択信号を生成するMSBコードデコード手段と、
前記ページ領域選択信号に応答して前記ローアドレスに対応する1つのページ領域のうち、一部の領域を局部的にアクティブにするロー要素と、
前記カラムアドレスをデコードするカラムデコード手段と
を備えることを特徴とするDRAM。 - 前記アドレスラッチ手段が、
付加レイテンシ規格を支援する遅延手段を備えることを特徴とする請求項3に記載のDRAM。 - 前記アドレスラッチ手段が、
内部クロックに応答してアドレスビットをラッチするラッチと、
該ラッチ部から出力されるアドレスビット及び前記RAS信号を入力とする第1のNANDゲートと、
該第1のNANDゲートの出力信号を入力としてローアドレスビットを出力する第1のインバータと、
前記内部クロックに応答して、前記ラッチから出力されるアドレスビットを前記付加レイテンシの分、遅延させて出力するフリップフロップ部と、
該フリップフロップ部の出力信号及び前記CAS信号を入力とする第2のNANDゲートと、
該第2のNANDゲートの出力信号を入力としてカラムアドレスビットを出力する第2のインバータと
を備えることを特徴とする請求項3に記載のDRAM。 - 前記ラッチから出力されるアドレスビット及び前記CAS信号を入力とする第3のNANDゲートと、
該第3のNANDゲートの出力信号を入力としてMSBコードビットを出力する第3のインバータと
を更に備えることを特徴とする請求項5に記載のDRAM。 - 前記MSBコードデコード手段が、前記カラムアドレスのMSBのうち、2ビット以上をデコードすることを特徴とする請求項3に記載のDRAM。
- 前記ロー要素が、ワードラインドライバ及びビットライン感知増幅器イネーブラを備えることを特徴とする請求項3に記載のDRAM。
- 前記ビットライン感知増幅器イネーブラが、メモリブロックイネーブル信号及び前記ページ領域選択信号に応答してビットライン感知増幅器のプルアップ電源ラインとプルダウン電源ラインとに電源を供給することを特徴とする請求項8に記載のDRAM。
- 前記ワードラインドライバが、前記ローデコード手段の出力信号及び前記ページ領域選択信号に応答して該当サブワードラインを駆動することを特徴とする請求項8に記載のDRAM。
- RAS信号に応答してローアドレスをラッチするステップと、
前記ローアドレスをデコードするステップと、
CAS信号に応答してカラムアドレスをラッチするステップと、
前記カラムアドレスのMSB(Most Significant Bit)のうち、一部のビットをデコードして、前記ローアドレスに対応する1つのページ領域のうち、一部の領域を局部的にアクティブにするステップと、
前記カラムアドレスをデコードするステップと
を含むことを特徴とするDRAMの駆動方法。 - 前記MSBのうち、一部のビットをデコードするステップが、前記カラムアドレスのMSBのうち、2ビット以上をデコードすることを特徴とする請求項11に記載のDRAMの駆動方法。
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KR20060102725 | 2006-10-23 |
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JP2008108417A true JP2008108417A (ja) | 2008-05-08 |
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JP2007273182A Pending JP2008108417A (ja) | 2006-10-23 | 2007-10-19 | 低電力dram及びその駆動方法 |
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US (1) | US7821812B2 (ja) |
JP (1) | JP2008108417A (ja) |
KR (1) | KR100902125B1 (ja) |
CN (1) | CN101169967B (ja) |
DE (1) | DE102007050424B4 (ja) |
TW (1) | TWI351035B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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EP2529374A4 (en) * | 2010-01-28 | 2014-04-02 | Hewlett Packard Development Co | MEMORY ACCESS METHODS AND APPARATUS |
KR101190694B1 (ko) * | 2011-03-04 | 2012-10-12 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 |
US9330735B2 (en) | 2011-07-27 | 2016-05-03 | Rambus Inc. | Memory with deferred fractional row activation |
KR101391352B1 (ko) | 2011-12-19 | 2014-05-07 | 삼성전자주식회사 | 메모리 시스템 및 그것의 프로그램 방법 |
US20140173170A1 (en) * | 2012-12-14 | 2014-06-19 | Hewlett-Packard Development Company, L.P. | Multiple subarray memory access |
US20140219007A1 (en) | 2013-02-07 | 2014-08-07 | Nvidia Corporation | Dram with segmented page configuration |
CN103985407A (zh) * | 2013-02-07 | 2014-08-13 | 辉达公司 | 采用分段式页面配置的dram |
KR20140108938A (ko) * | 2013-03-04 | 2014-09-15 | 삼성전자주식회사 | 반도체 메모리를 액세스하는 액세스 방법 및 반도체 회로 |
KR20170010274A (ko) * | 2015-07-17 | 2017-01-26 | 삼성전자주식회사 | 적응적 페이지 사이즈 조절 기능을 갖는 반도체 메모리 장치 |
KR102495364B1 (ko) * | 2018-03-21 | 2023-02-06 | 에스케이하이닉스 주식회사 | 버퍼 회로 및 이를 포함하는 메모리 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002269982A (ja) * | 2001-03-07 | 2002-09-20 | Toshiba Corp | 半導体メモリ |
JP2003151266A (ja) * | 2001-11-08 | 2003-05-23 | Elpida Memory Inc | 半導体記憶装置とそのデータ読み出し制御方法 |
JP2004171753A (ja) * | 2002-11-19 | 2004-06-17 | Samsung Electronics Co Ltd | ページ長を変換できる構造を有する半導体メモリ装置及びそのページ長の変換方法 |
JP2005182973A (ja) * | 2003-12-17 | 2005-07-07 | Hynix Semiconductor Inc | アクセスタイムを短縮できる半導体メモリ装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4118847A1 (de) * | 1990-06-08 | 1991-12-12 | Toshiba Kawasaki Kk | Halbleiterspeicheranordnung mit ferroelektrischem kondensator |
US6223264B1 (en) * | 1991-10-24 | 2001-04-24 | Texas Instruments Incorporated | Synchronous dynamic random access memory and data processing system using an address select signal |
KR0183538B1 (ko) * | 1995-12-08 | 1999-04-15 | 김주용 | 고속 페이지 모드 기능을 갖는 반도체 메모리 장치 |
US6034913A (en) * | 1997-09-19 | 2000-03-07 | Siemens Microelectronics, Inc. | Apparatus and method for high-speed wordline driving with low area overhead |
JP2000048565A (ja) * | 1998-07-29 | 2000-02-18 | Mitsubishi Electric Corp | 同期型半導体記憶装置 |
KR100275745B1 (ko) * | 1998-10-19 | 2000-12-15 | 윤종용 | 가변적인 페이지 수 및 가변적인 페이지 길이를 갖는 반도체 메모리장치 |
US6751159B2 (en) * | 2001-10-26 | 2004-06-15 | Micron Technology, Inc. | Memory device operable in either a high-power, full-page size mode or a low-power, reduced-page size mode |
US6687185B1 (en) * | 2002-08-29 | 2004-02-03 | Micron Technology, Inc. | Method and apparatus for setting and compensating read latency in a high speed DRAM |
KR100666873B1 (ko) * | 2003-12-24 | 2007-01-10 | 삼성전자주식회사 | 제1 이중 데이터 율 및 제2 이중 데이터 율 겸용싱크로너스 디램 |
JP2006092640A (ja) * | 2004-09-24 | 2006-04-06 | Sanyo Electric Co Ltd | メモリ |
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- 2007-10-19 JP JP2007273182A patent/JP2008108417A/ja active Pending
- 2007-10-22 KR KR1020070106069A patent/KR100902125B1/ko active IP Right Grant
- 2007-10-22 DE DE102007050424.3A patent/DE102007050424B4/de active Active
- 2007-10-22 TW TW096139541A patent/TWI351035B/zh active
- 2007-10-23 CN CN2007101668797A patent/CN101169967B/zh active Active
- 2007-10-23 US US11/976,241 patent/US7821812B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002269982A (ja) * | 2001-03-07 | 2002-09-20 | Toshiba Corp | 半導体メモリ |
JP2003151266A (ja) * | 2001-11-08 | 2003-05-23 | Elpida Memory Inc | 半導体記憶装置とそのデータ読み出し制御方法 |
JP2004171753A (ja) * | 2002-11-19 | 2004-06-17 | Samsung Electronics Co Ltd | ページ長を変換できる構造を有する半導体メモリ装置及びそのページ長の変換方法 |
JP2005182973A (ja) * | 2003-12-17 | 2005-07-07 | Hynix Semiconductor Inc | アクセスタイムを短縮できる半導体メモリ装置 |
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US7821812B2 (en) | 2010-10-26 |
CN101169967A (zh) | 2008-04-30 |
DE102007050424A1 (de) | 2008-05-21 |
US20080094933A1 (en) | 2008-04-24 |
TW200832404A (en) | 2008-08-01 |
DE102007050424B4 (de) | 2015-05-21 |
CN101169967B (zh) | 2011-12-07 |
KR100902125B1 (ko) | 2009-06-09 |
TWI351035B (en) | 2011-10-21 |
KR20080036529A (ko) | 2008-04-28 |
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