TWI351035B - Low-power dram and method for driving the same - Google Patents

Low-power dram and method for driving the same

Info

Publication number
TWI351035B
TWI351035B TW096139541A TW96139541A TWI351035B TW I351035 B TWI351035 B TW I351035B TW 096139541 A TW096139541 A TW 096139541A TW 96139541 A TW96139541 A TW 96139541A TW I351035 B TWI351035 B TW I351035B
Authority
TW
Taiwan
Prior art keywords
driving
low
same
power dram
dram
Prior art date
Application number
TW096139541A
Other languages
English (en)
Other versions
TW200832404A (en
Inventor
Yong-Ki Kim
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200832404A publication Critical patent/TW200832404A/zh
Application granted granted Critical
Publication of TWI351035B publication Critical patent/TWI351035B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4082—Address Buffers; level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2245—Memory devices with an internal cache buffer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
TW096139541A 2006-10-23 2007-10-22 Low-power dram and method for driving the same TWI351035B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20060102725 2006-10-23

Publications (2)

Publication Number Publication Date
TW200832404A TW200832404A (en) 2008-08-01
TWI351035B true TWI351035B (en) 2011-10-21

Family

ID=39311411

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096139541A TWI351035B (en) 2006-10-23 2007-10-22 Low-power dram and method for driving the same

Country Status (6)

Country Link
US (1) US7821812B2 (zh)
JP (1) JP2008108417A (zh)
KR (1) KR100902125B1 (zh)
CN (1) CN101169967B (zh)
DE (1) DE102007050424B4 (zh)
TW (1) TWI351035B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI770297B (zh) * 2018-03-21 2022-07-11 韓商愛思開海力士有限公司 緩衝器電路以及具有該緩衝器電路的記憶體裝置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102812518B (zh) * 2010-01-28 2015-10-21 惠普发展公司，有限责任合伙企业 存储器存取方法和装置
KR101190694B1 (ko) * 2011-03-04 2012-10-12 에스케이하이닉스 주식회사 반도체 메모리 장치
WO2013015893A1 (en) * 2011-07-27 2013-01-31 Rambus Inc. Memory with deferred fractional row activation
KR101391352B1 (ko) 2011-12-19 2014-05-07 삼성전자주식회사 메모리 시스템 및 그것의 프로그램 방법
US20140173170A1 (en) * 2012-12-14 2014-06-19 Hewlett-Packard Development Company, L.P. Multiple subarray memory access
US20140219007A1 (en) 2013-02-07 2014-08-07 Nvidia Corporation Dram with segmented page configuration
CN103985407A (zh) * 2013-02-07 2014-08-13 辉达公司 采用分段式页面配置的dram
KR20140108938A (ko) * 2013-03-04 2014-09-15 삼성전자주식회사 반도체 메모리를 액세스하는 액세스 방법 및 반도체 회로
KR20170010274A (ko) * 2015-07-17 2017-01-26 삼성전자주식회사 적응적 페이지 사이즈 조절 기능을 갖는 반도체 메모리 장치

Family Cites Families (14)

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US5400275A (en) * 1990-06-08 1995-03-21 Kabushiki Kaisha Toshiba Semiconductor memory device using ferroelectric capacitor and having only one sense amplifier selected
US6223264B1 (en) * 1991-10-24 2001-04-24 Texas Instruments Incorporated Synchronous dynamic random access memory and data processing system using an address select signal
KR0183538B1 (ko) * 1995-12-08 1999-04-15 김주용 고속 페이지 모드 기능을 갖는 반도체 메모리 장치
US6034913A (en) * 1997-09-19 2000-03-07 Siemens Microelectronics, Inc. Apparatus and method for high-speed wordline driving with low area overhead
JP2000048565A (ja) * 1998-07-29 2000-02-18 Mitsubishi Electric Corp 同期型半導体記憶装置
KR100275745B1 (ko) * 1998-10-19 2000-12-15 윤종용 가변적인 페이지 수 및 가변적인 페이지 길이를 갖는 반도체 메모리장치
JP2002269982A (ja) * 2001-03-07 2002-09-20 Toshiba Corp 半導体メモリ
US6751159B2 (en) * 2001-10-26 2004-06-15 Micron Technology, Inc. Memory device operable in either a high-power, full-page size mode or a low-power, reduced-page size mode
JP4143287B2 (ja) * 2001-11-08 2008-09-03 エルピーダメモリ株式会社 半導体記憶装置とそのデータ読み出し制御方法
US6687185B1 (en) * 2002-08-29 2004-02-03 Micron Technology, Inc. Method and apparatus for setting and compensating read latency in a high speed DRAM
TWI233619B (en) * 2002-11-19 2005-06-01 Samsung Electronics Co Ltd Circuits and methods for changing page length in a semiconductor memory device
KR100596435B1 (ko) * 2003-12-17 2006-07-05 주식회사 하이닉스반도체 어드레스 억세스타임을 줄일 수 있는 반도체 메모리 장치
KR100666873B1 (ko) * 2003-12-24 2007-01-10 삼성전자주식회사 제1 이중 데이터 율 및 제2 이중 데이터 율 겸용싱크로너스 디램
JP2006092640A (ja) * 2004-09-24 2006-04-06 Sanyo Electric Co Ltd メモリ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI770297B (zh) * 2018-03-21 2022-07-11 韓商愛思開海力士有限公司 緩衝器電路以及具有該緩衝器電路的記憶體裝置

Also Published As

Publication number Publication date
DE102007050424A1 (de) 2008-05-21
CN101169967B (zh) 2011-12-07
JP2008108417A (ja) 2008-05-08
US7821812B2 (en) 2010-10-26
CN101169967A (zh) 2008-04-30
US20080094933A1 (en) 2008-04-24
TW200832404A (en) 2008-08-01
DE102007050424B4 (de) 2015-05-21
KR20080036529A (ko) 2008-04-28
KR100902125B1 (ko) 2009-06-09

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