JP2008060564A5 - - Google Patents
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- Publication number
- JP2008060564A5 JP2008060564A5 JP2007212538A JP2007212538A JP2008060564A5 JP 2008060564 A5 JP2008060564 A5 JP 2008060564A5 JP 2007212538 A JP2007212538 A JP 2007212538A JP 2007212538 A JP2007212538 A JP 2007212538A JP 2008060564 A5 JP2008060564 A5 JP 2008060564A5
- Authority
- JP
- Japan
- Prior art keywords
- metal silicide
- silicon
- electrical fuse
- germanium
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims 12
- 239000002184 metal Substances 0.000 claims 8
- 229910021332 silicide Inorganic materials 0.000 claims 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 8
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 229920005591 polysilicon Polymers 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 2
- -1 silicon germanium Chemical compound 0.000 claims 2
Claims (5)
- 基板上に形成された抵抗を備える電気ヒューズであり、
前記抵抗は、第１の領域を画定する第１の材料と、前記第１の領域に埋設された第２の領域を画定する第２の材料とを備え、
前記第１の材料は第１の熱安定性を有し、前記第２の材料は前記第１の熱安定性よりも低い第２の熱安定性を有している電気ヒューズ。 - 前記第１の材料はポリシリコン上に金属シリサイドを備え、前記第２の材料はポリシリコンゲルマニウム上に金属シリサイドを備える請求項１に記載の電気ヒューズ。
- 前記第１の材料は金属シリサイドを備え、前記第２の材料はポリシリコン上の金属シリサイドを備える請求項１に記載の電気ヒューズ。
- 前記基板はシリコン・オン・インシュレータを備え、前記第１の材料はシリコン上の金属シリサイドであり、前記第２の材料はシリコンゲルマニウム上の金属シリサイドゲルマニウムである請求項１に記載の電気ヒューズ。
- 前記基板はシリコン・オン・インシュレータを備え、前記第１の材料はシリコン上の金属シリサイドであり、前記第２の材料はシリコンゲルマニウム上のシリコン上の金属シリサイドである請求項１に記載の電気ヒューズ。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/465,188 US20080067629A1 (en) | 2006-08-17 | 2006-08-17 | Electrical Fuse Having Resistor Materials Of Different Thermal Stability |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008060564A JP2008060564A (ja) | 2008-03-13 |
| JP2008060564A5 true JP2008060564A5 (ja) | 2009-10-01 |
Family
ID=39187704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007212538A Pending JP2008060564A (ja) | 2006-08-17 | 2007-08-17 | 異なる熱安定性の抵抗材料を有する電気ヒューズ |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20080067629A1 (ja) |
| JP (1) | JP2008060564A (ja) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8829645B2 (en) * | 2008-06-12 | 2014-09-09 | International Business Machines Corporation | Structure and method to form e-fuse with enhanced current crowding |
| US7881093B2 (en) * | 2008-08-04 | 2011-02-01 | International Business Machines Corporation | Programmable precision resistor and method of programming the same |
| US8035191B2 (en) * | 2008-12-02 | 2011-10-11 | United Microelectronics Corp. | Contact efuse structure |
| US7960809B2 (en) * | 2009-01-16 | 2011-06-14 | International Business Machines Corporation | eFuse with partial SiGe layer and design structure therefor |
| DE102009055368A1 (de) * | 2009-12-29 | 2012-03-29 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Siliziumbasiertes Halbleiterbauelement mit E-Sicherungen, die durch eine eingebettete Halbleiterlegierung hergestellt sind |
| DE102010030765B4 (de) * | 2010-06-30 | 2018-12-27 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Halbleiterbauelement mit Metallgateelektrodenstrukturen mit großem ε und Präzisions-eSicherungen, die in dem aktiven Halbleitermaterial hergestellt sind, und Herstellungsverfahren |
| US8896088B2 (en) | 2011-04-27 | 2014-11-25 | International Business Machines Corporation | Reliable electrical fuse with localized programming |
| US8969999B2 (en) | 2011-10-27 | 2015-03-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin-like field effect transistor (FinFET) based, metal-semiconductor alloy fuse device and method of manufacturing same |
| US9570571B1 (en) | 2015-11-18 | 2017-02-14 | International Business Machines Corporation | Gate stack integrated metal resistors |
| US9698212B2 (en) | 2015-11-30 | 2017-07-04 | International Business Machines Corporation | Three-dimensional metal resistor formation |
| US9893012B2 (en) | 2016-03-28 | 2018-02-13 | International Business Machines Corporation | Advanced e-fuse structure with hybrid metal controlled microstructure |
| US9859209B2 (en) | 2016-03-28 | 2018-01-02 | International Business Machines Corporation | Advanced e-Fuse structure with enhanced electromigration fuse element |
| US10032716B2 (en) * | 2016-03-28 | 2018-07-24 | International Business Machines Corporation | Advanced E-fuse structure with controlled microstructure |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5643758A (en) * | 1979-09-17 | 1981-04-22 | Fujitsu Ltd | Semiconductor device |
| US6958523B2 (en) * | 2000-09-15 | 2005-10-25 | Texas Instruments Incorporated | On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuits |
| KR100495023B1 (ko) * | 2000-12-28 | 2005-06-14 | 가부시끼가이샤 도시바 | 반도체 장치 및 그 제조 방법 |
| JP2008004571A (ja) * | 2006-06-20 | 2008-01-10 | Matsushita Electric Ind Co Ltd | ポリシリコンヒューズ及びその製造方法 |
-
2006
- 2006-08-17 US US11/465,188 patent/US20080067629A1/en not_active Abandoned
-
2007
- 2007-08-17 JP JP2007212538A patent/JP2008060564A/ja active Pending
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