JPS5643758A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5643758A
JPS5643758A JP11901079A JP11901079A JPS5643758A JP S5643758 A JPS5643758 A JP S5643758A JP 11901079 A JP11901079 A JP 11901079A JP 11901079 A JP11901079 A JP 11901079A JP S5643758 A JPS5643758 A JP S5643758A
Authority
JP
Japan
Prior art keywords
heating elements
elements
thin
film
fusible body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11901079A
Other languages
Japanese (ja)
Inventor
Yoshihiro Takemae
Fumio Baba
Tomio Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11901079A priority Critical patent/JPS5643758A/en
Publication of JPS5643758A publication Critical patent/JPS5643758A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To cut a fusible body at a low temperature and with little currents by a method wherein two heating elements and the low melting point metallic thin-film fusible body between the elements are formed on a semiconductor substrate, and the fusible body is fused by the generation of heat of the heating elements. CONSTITUTION:The heating elements 3, 3' consisting of thin-films such as polycrystalline silicon thin-films are formed on the semiconductor substrate 1 through a silicon oxide film 2, holding a minute void. The fusible body 4 of low melting point metallic thin-film being composed of the thin-film such as an Al thin-film is made up between the heating elements 3, 3'. The heating elements are under conductive condition as they are, and when needing change-over currents greater than normal operation are flowed between the heating elements 3, 3', the soluble body 4 is fused and the elements are brought to opened conditions. This semiconductor device is used for an MOSRAM and a PROM which can be changed over with elements which faulty elements in the semiconductor device are excessively formed. Thus, the soluble body can be cut with little currents because the heating elements are built in.
JP11901079A 1979-09-17 1979-09-17 Semiconductor device Pending JPS5643758A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11901079A JPS5643758A (en) 1979-09-17 1979-09-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11901079A JPS5643758A (en) 1979-09-17 1979-09-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5643758A true JPS5643758A (en) 1981-04-22

Family

ID=14750748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11901079A Pending JPS5643758A (en) 1979-09-17 1979-09-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5643758A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139958A (en) * 1981-02-23 1982-08-30 Seiko Instr & Electronics Ltd Fuse type non-volatile memory
JPS58167A (en) * 1981-06-25 1983-01-05 Fujitsu Ltd Semiconductor device
JPS58158099A (en) * 1982-03-15 1983-09-20 Nippon Telegr & Teleph Corp <Ntt> Programmable read-only memory
JP2008060564A (en) * 2006-08-17 2008-03-13 Toshiba Corp Electric fuse employing resistor materials of different thermal stabilities

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139958A (en) * 1981-02-23 1982-08-30 Seiko Instr & Electronics Ltd Fuse type non-volatile memory
JPS58167A (en) * 1981-06-25 1983-01-05 Fujitsu Ltd Semiconductor device
JPH0332229B2 (en) * 1981-06-25 1991-05-10 Fujitsu Ltd
JPS58158099A (en) * 1982-03-15 1983-09-20 Nippon Telegr & Teleph Corp <Ntt> Programmable read-only memory
JP2008060564A (en) * 2006-08-17 2008-03-13 Toshiba Corp Electric fuse employing resistor materials of different thermal stabilities

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