JPH0332229B2 - - Google Patents
Info
- Publication number
- JPH0332229B2 JPH0332229B2 JP9857381A JP9857381A JPH0332229B2 JP H0332229 B2 JPH0332229 B2 JP H0332229B2 JP 9857381 A JP9857381 A JP 9857381A JP 9857381 A JP9857381 A JP 9857381A JP H0332229 B2 JPH0332229 B2 JP H0332229B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- molybdenum
- cutting
- circuit
- cut
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000007769 metal material Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 20
- 229910052750 molybdenum Inorganic materials 0.000 description 20
- 239000011733 molybdenum Substances 0.000 description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 15
- 229920005591 polysilicon Polymers 0.000 description 12
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Description
【発明の詳細な説明】
本発明は、半導体装置特にモリブデン配線／二
酸化シリコン／多結晶シリコン（半導体層）の構
造において、多結晶シリコンをヒーターとして用
い、選択的に電流を流してその上のモリブデン配
線の一部を酸化、昇華させ切断することによつて
プログラムをなした読出し専用記憶装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention uses polycrystalline silicon as a heater in a semiconductor device, particularly in a structure of molybdenum wiring/silicon dioxide/polycrystalline silicon (semiconductor layer), and selectively passes current to heat the molybdenum on the semiconductor device. This invention relates to a read-only storage device that is programmed by oxidizing, sublimating, and cutting a portion of the wiring.
従来技術において、ヒユーズ方式よりプログラ
ムされる読出し専用記憶装置のヒユーズ材料に
は、多結晶シリコン（ポリシリコン）、ニツケル
（Ni）、チタン・タングステン（Ti−Ｗ）などが
用いられ、これはヒユーズとして集積回路（IC）
内に配線の一部として組込まれ、それを切断する
ことによつてプログラミングがなされている。 In the prior art, polycrystalline silicon (polysilicon), nickel (Ni), titanium/tungsten (Ti-W), etc. are used as fuse materials for read-only storage devices programmed using the fuse method; integrated circuit (IC)
It is incorporated as part of the wiring within the device, and programming is performed by cutting it.
プログラミングに用いるこれらの材料から成る
ヒユーズの切断は一般的に電気的な溶断により、
切断には1400℃以上の高温を必要とするので大電
力を必要とする。というのは、かかる材料はIC
の配線の一部として使用されるので、それを切断
のための高温に上げやすいように抵抗を大にした
とすると、もしその部分が回路的に切断の必要が
なく、回路の一部として使用されたとき回路に高
抵抗層が存在することになり、回路の動作時間が
遅くなる。従つて、現実には、抵抗をあまり大に
することをせず、切断のためには電流を大にする
ことによつてカバーしてきた。更に切断はポリシ
リコン材料などの溶断であるため、切断がすつき
りした形にならず、外見上、切断の確認がむずか
しい。 Fuses made of these materials used for programming are generally cut by electrical fusing.
Cutting requires a high temperature of over 1400℃, which requires a large amount of power. This is because such materials are
Since it is used as part of the wiring, if the resistance is made large so that it is easy to raise it to a high temperature for cutting, if that part does not need to be cut in terms of the circuit and is used as part of the circuit. When this occurs, a high resistance layer is present in the circuit, which slows down the circuit's operating time. Therefore, in reality, the resistance has not been increased too much, and cutting has been compensated for by increasing the current. Furthermore, since the cutting is done by fusing a polysilicon material, etc., the cutting does not take a sharp shape, making it difficult to visually confirm the cutting.
本願の発明者は、PROMのプログラミングに
用いる配線にモリブデンを用い、それに酸素雰囲
気中でレーザビームの照射を行うと、モリブデン
は酸化してMoO3となり、それの揮発性を利用し
て所望の部分のモリブデンを昇華させることが可
能であることを確認した。 The inventor of this application used molybdenum for the wiring used in PROM programming, and when it was irradiated with a laser beam in an oxygen atmosphere, the molybdenum oxidized to become MoO 3 , and using its volatility, it was possible to target the desired part. It was confirmed that it is possible to sublimate molybdenum.
本願発明の目的は従来技術における前述の問題
を解決するにあり、そのために、集積回路を構成
する配線の切断によりプログラムされる記憶装置
において、該配線は、酸化されると昇華する金属
材料にて形成し、該配線は絶縁層を介して該集積
回路とは独立の半導体層の抵抗体上に配置し、該
半導体層に通電してそれを加熱し、この熱により
該配線の切断部分を酸化し昇華させて、切断せし
めたことを特徴とする半導体装置を提供する。 An object of the present invention is to solve the above-mentioned problems in the prior art, and for this purpose, in a memory device that is programmed by cutting wiring constituting an integrated circuit, the wiring is made of a metal material that sublimates when oxidized. The wiring is placed on a resistor of a semiconductor layer independent of the integrated circuit via an insulating layer, and the semiconductor layer is heated to oxidize the cut portion of the wiring. Provided is a semiconductor device characterized in that the semiconductor device is sublimated and cut.
かかるPROMにおいては、モリブデン配線で
直接ICの配線を行い、他方モリブデンを昇華さ
せるためのヒータまたは抵抗体としては配線とは
別にポリシリコンの如き半導体層で抵抗体を用意
する。つまり、切断用回路とIC用配線とは区別
され独立しているので、ヒータまたは抵抗体によ
つて構成される切断用回路がICの高速化の妨げ
または障害となることはない。 In such a PROM, IC wiring is directly performed using molybdenum wiring, and on the other hand, as a heater or a resistor for sublimating molybdenum, a resistor is prepared using a semiconductor layer such as polysilicon in addition to the wiring. In other words, since the cutting circuit and the IC wiring are distinct and independent, the cutting circuit constituted by the heater or the resistor does not hinder or impede the speeding up of the IC.
以下、本発明の半導体装置の実施例を添付図面
を参照して説明する。 Embodiments of the semiconductor device of the present invention will be described below with reference to the accompanying drawings.
第１図には従来技術によるヒユーズ方式の
PROMの一部が平面図で示される。図において、
１と１′とはプログラミングに用いられるアルミ
ニウム配線を示し、両配線は例えばポリシリコン
またはTi−Ｗ合金の配線２で接続されている。
プログラミングのためのアルミニウム配線１と
１′の接続を切りたいときは両者間に大電流を流
して配線２を溶断する。配線２が溶断するときそ
の熱でアルミニウム配線１，１′特にそれぞれの
端部分が溶融してつながつてしまうことを回避す
るために、配線２は少なくとも5μm以上の長さに
設計しなければならなかつた（その巾は2μm前後
として）。配線２の溶断に必要な電流は、印加電
圧を10Vとして、一般に数十ミリアンペア程度の
大きさのものであつた。 Figure 1 shows the fuse method using conventional technology.
A portion of the PROM is shown in plan view. In the figure,
1 and 1' indicate aluminum wiring used for programming, and both wirings are connected by a wiring 2 made of, for example, polysilicon or Ti--W alloy.
When it is desired to disconnect the aluminum wirings 1 and 1' for programming, a large current is passed between them to melt down the wiring 2. In order to avoid that when the wiring 2 melts, the heat causes the aluminum wiring 1, 1' especially the ends of each to melt and connect, the wiring 2 must be designed to have a length of at least 5 μm. (assuming its width to be around 2 μm). The current required to blow out the wiring 2 was generally on the order of several tens of milliamperes when the applied voltage was 10V.
本発明の実施例は、第２図ａの平面図とそのｂ
の断面図に示される。この実施例において、断線
されるべきヒユーズ材料としてモリブデンを選
び、それの酸化、昇華を利用する。図において、
１１はモリブデン配線で、その切断またはヒユー
ズ部分１２は、厚さは1μmより小にまた巾は約
2μmに設定する。ところで、第２図ａに示される
ものは、全面が例えば燐珪酸ガラス（PSG）の
保護膜で覆われており、切断部分１２を切断する
ときには、保護膜に窓１３を窓開けしなければな
らない。切断部分１２の長さＬはかかる窓開け技
術によつて定まる窓１３の（図に見て）横方向の
拡がりに左右される。つまり、切断部分１２は次
に説明するポリシリコン層の加熱により酸化、昇
華するから、従来技術の場合の如く配線の他の部
分の溶融を懸念する必要がないから、切断部分を
空気にさらすために必要な保護膜の窓開け技術が
許す限りにおいてかなり短くすることができ、そ
のことは製造される半導体装置の小型化に寄与す
る。 The embodiment of the present invention is shown in the plan view of FIG.
shown in the cross-sectional view. In this embodiment, molybdenum is selected as the fuse material to be broken, and its oxidation and sublimation are utilized. In the figure,
Reference numeral 11 is molybdenum wiring, and its cut or fuse portion 12 has a thickness of less than 1 μm and a width of approximately
Set to 2μm. By the way, in the case shown in FIG. 2a, the entire surface is covered with a protective film made of, for example, phosphosilicate glass (PSG), and when cutting the cut portion 12, a window 13 must be opened in the protective film. . The length L of the cut portion 12 depends on the lateral extent (as viewed in the figures) of the window 13 determined by the window opening technique. In other words, since the cut portion 12 is oxidized and sublimated by heating the polysilicon layer, which will be explained next, there is no need to worry about melting of other parts of the wiring as in the case of the prior art. The length can be considerably shortened as long as the protective film opening technique required for this process allows, which contributes to miniaturization of the semiconductor devices manufactured.
かかるモリブデン配線１１の切断部分は、第２
図ａのＢ−Ｂ線に沿う断面図である第２図ｂに見
られる如く、厚さ約1000Åの二酸化シリコン膜１
４の如き絶縁層を介して、厚さ2000〜4000Åのポ
リシリコン層（半導体層）１５の上に形成され
る。モリブデンは酸素雰囲気または空気中で500
℃以上で酸化し昇華するから、ヒータすなわち抵
抗体であるポリシリコン層に電流を流しその自己
発熱でモリブデン配線の切断部分を500℃以上に
熱してやらなければならない。この電流値は電圧
およびヒータとして動くポリシリコン層の抵抗値
によつて決定されるが、実験の結果、電圧を10V
として、従来技術においてポリシリコン層の溶断
に必要な数十ミリアンペアに比べ20ミリアンペア
未満で足りることが確認された。 The cut portion of the molybdenum wiring 11 is the second
As seen in FIG. 2b, which is a cross-sectional view taken along line B-B in FIG.
It is formed on a polysilicon layer (semiconductor layer) 15 with a thickness of 2000 to 4000 Å via an insulating layer such as 4. Molybdenum is 500% in oxygen atmosphere or air
Since it oxidizes and sublimates at temperatures above 50°C, it is necessary to run a current through the heater, or the polysilicon layer that is the resistor, and use the self-heating to heat the cut portion of the molybdenum wiring to 500°C or above. This current value is determined by the voltage and the resistance value of the polysilicon layer that acts as a heater, but as a result of experiments, the voltage was set to 10V.
As a result, it was confirmed that less than 20 milliamps is sufficient compared to the several tens of milliamps required to blow out the polysilicon layer in conventional technology.
以上に説明した如く、本発明にかかるPROM
においては、
イ IC回路（モリブデン配線１１はその一部）
と切断回路またはヒータ回路（ポリシリコン層
１５）とは完全に分離されうる。 As explained above, the PROM according to the present invention
In the case of (a) IC circuit (molybdenum wiring 11 is a part of it)
and the cutting circuit or heater circuit (polysilicon layer 15) can be completely separated.
ロ 切断用回路（ヒータ回路）はIC回路から独
立であるので、それは素子の操作速度に影響を
与えない。そのために、抵抗体として用いるポ
リシリコン層の抵抗値はいわば自由に高い値に
設定することが可能となる。B. Since the cutting circuit (heater circuit) is independent from the IC circuit, it does not affect the operating speed of the element. Therefore, the resistance value of the polysilicon layer used as a resistor can be freely set to a high value.
ハ IC回路の配線にはモリブデン（金属）を使
用するので、IC回路の操作の高速化が可能と
なる。C. Since molybdenum (metal) is used for the wiring of the IC circuit, it is possible to speed up the operation of the IC circuit.
ニ 前述したように保護膜に究開けをしておく
と、モリブデンは空気にさらされ500℃の程度
の低温度で酸化、昇華するので、従来のヒユー
ズ方式の場合の如く大なる電流値を必要としな
い。更に、従来技術における溶断ではきないの
で、モリブデン配線の切断部（昇華した部分）
はきれいに保たれ、配線材料の飛散、付着によ
る短絡の危険や美観の低下がない。D. As mentioned above, if the protective film is left open, molybdenum will be exposed to air and will oxidize and sublimate at temperatures as low as 500°C, so a large current value will be required as in the case of the conventional fuse method. I don't. Furthermore, since it is not possible to cut the molybdenum wiring by melting in the conventional technology,
are kept clean, and there is no danger of short circuits or deterioration of aesthetics due to scattering or adhesion of wiring materials.
という効果が得られる。This effect can be obtained.
モリブデン配線の切断部分の昇華のためには保
護膜に窓開けをなしたが、保護膜に例えばPSG
を用いたものであれば、切断後において、レーザ
ビームの照射によつてPSGを溶融して窓をふさ
ぐようにしてもよい。 In order to sublimate the cut part of the molybdenum wiring, a window was opened in the protective film, but the protective film
If the PSG is used, the window may be closed by melting the PSG by laser beam irradiation after cutting.
なお、以上の本発明の説明においてはモリブデ
ンを例にとつたが、本発明の適用範囲はその場合
に限定されるものではなく、タングステンの如き
その他の金属材料を用いる場合にも及ぶものであ
る。 Although the above description of the present invention uses molybdenum as an example, the scope of application of the present invention is not limited to that case, but also extends to cases where other metal materials such as tungsten are used. .
第１図は従来のヒユーズ方式によるPROMの
一部の平面図、第２図は本発明にかかるPROM
の一部の平面図と断面図である。
１１…モリブデン配線、１２…モリブデン配線
の切断（ヒユーズ）部分、１３…窓、１４…二酸
化シリコン膜、１５…ポリシリコン層。
Figure 1 is a plan view of a part of a conventional fuse-type PROM, and Figure 2 is a PROM according to the present invention.
FIG. 2 is a plan view and a cross-sectional view of a part of DESCRIPTION OF SYMBOLS 11... Molybdenum wiring, 12... Cutting (fuse) part of molybdenum wiring, 13... Window, 14... Silicon dioxide film, 15... Polysilicon layer.
Claims (1)
ラムされる記憶装置において、該配線は、酸化さ
れると昇華する金属材料にて形成し、該配線は絶
縁層を介して該集積回路とは独立の半導体層の抵
抗体上に配置し、該半導体層に通電してそれを加
熱し、この熱により該配線の切断部分を酸化し昇
華させて、切断せしめたことを特徴とする半導体
装置。1 In a memory device that is programmed by cutting wiring that constitutes an integrated circuit, the wiring is formed of a metal material that sublimates when oxidized, and the wiring is connected to a semiconductor independent of the integrated circuit via an insulating layer. 1. A semiconductor device, characterized in that the semiconductor layer is disposed on a resistor, the semiconductor layer is energized to heat it, and the heat oxidizes and sublimates the cut portion of the wiring to cause the wire to be cut.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56098573A JPS58167A (en) | 1981-06-25 | 1981-06-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56098573A JPS58167A (en) | 1981-06-25 | 1981-06-25 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58167A JPS58167A (en) | 1983-01-05 |
| JPH0332229B2 true JPH0332229B2 (en) | 1991-05-10 |
Family
ID=14223407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56098573A Granted JPS58167A (en) | 1981-06-25 | 1981-06-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58167A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6014434B2 (en) * | 1981-11-16 | 1985-04-13 | アルプス電気株式会社 | Disk drive door opening/closing mechanism |
| US4564930A (en) * | 1982-07-20 | 1986-01-14 | Pioneer Electronic Corporation | Disc carrying system |
| US4748197A (en) * | 1984-06-27 | 1988-05-31 | Allied Corporation | Fiber for reinforcing plastic composites and reinforced plastic composites therefrom |
| JPS61111563A (en) * | 1984-11-05 | 1986-05-29 | Mitsubishi Electric Corp | Method of metallic wiring cut of semiconductor device |
| US6023091A (en) * | 1995-11-30 | 2000-02-08 | Motorola, Inc. | Semiconductor heater and method for making |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5617060A (en) * | 1979-07-23 | 1981-02-18 | Fujitsu Ltd | Semiconductor device |
| JPS5643758A (en) * | 1979-09-17 | 1981-04-22 | Fujitsu Ltd | Semiconductor device |
-
1981
- 1981-06-25 JP JP56098573A patent/JPS58167A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5617060A (en) * | 1979-07-23 | 1981-02-18 | Fujitsu Ltd | Semiconductor device |
| JPS5643758A (en) * | 1979-09-17 | 1981-04-22 | Fujitsu Ltd | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58167A (en) | 1983-01-05 |
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