JPS56156989A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS56156989A
JPS56156989A JP5880680A JP5880680A JPS56156989A JP S56156989 A JPS56156989 A JP S56156989A JP 5880680 A JP5880680 A JP 5880680A JP 5880680 A JP5880680 A JP 5880680A JP S56156989 A JPS56156989 A JP S56156989A
Authority
JP
Japan
Prior art keywords
fuse body
wires
storage device
semiconductor storage
prom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5880680A
Other languages
Japanese (ja)
Inventor
Takashi Yabu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5880680A priority Critical patent/JPS56156989A/en
Publication of JPS56156989A publication Critical patent/JPS56156989A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To facilitate blowing of a fuse body and make writing sure by providing a high m. p. metallic layer to the electrode connecting parts of a fuse body for a PROM, etc. CONSTITUTION:A high m. p. metallic layer 21 is provided to the electrode connecting parts 13, 13' of a fuse body 11 for a PROM, etc., and the wirings 14, 14' of Al, etc. and the fuse body 11 are connected by way of the layer 21. If with this constitution electric current is flowed to the fuse body 12 by the wires 14, 14', the wires 14, 14' are not heated and the Al material forming the wires 14, 14' does not diffuse into the fuse body 11, so that the fuse body 11 is easily blown in a cutting part 12, whereby the sure writing is accomplished.
JP5880680A 1980-05-02 1980-05-02 Semiconductor storage device Pending JPS56156989A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5880680A JPS56156989A (en) 1980-05-02 1980-05-02 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5880680A JPS56156989A (en) 1980-05-02 1980-05-02 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS56156989A true JPS56156989A (en) 1981-12-03

Family

ID=13094834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5880680A Pending JPS56156989A (en) 1980-05-02 1980-05-02 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS56156989A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139958A (en) * 1981-02-23 1982-08-30 Seiko Instr & Electronics Ltd Fuse type non-volatile memory
US4747076A (en) * 1982-12-25 1988-05-24 Fujitsu Limited Method of writing information into a fuse-type ROM
KR100435084B1 (en) * 2001-05-24 2004-06-09 엔이씨 일렉트로닉스 가부시키가이샤 Semiconductor device and blowout method of fuse

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139958A (en) * 1981-02-23 1982-08-30 Seiko Instr & Electronics Ltd Fuse type non-volatile memory
US4747076A (en) * 1982-12-25 1988-05-24 Fujitsu Limited Method of writing information into a fuse-type ROM
KR100435084B1 (en) * 2001-05-24 2004-06-09 엔이씨 일렉트로닉스 가부시키가이샤 Semiconductor device and blowout method of fuse

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