JP2008016440A - 炭素ナノチューブ構造体の形成方法及びそれを利用した電界放出素子の製造方法 - Google Patents

炭素ナノチューブ構造体の形成方法及びそれを利用した電界放出素子の製造方法 Download PDF

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Publication number
JP2008016440A
JP2008016440A JP2007122621A JP2007122621A JP2008016440A JP 2008016440 A JP2008016440 A JP 2008016440A JP 2007122621 A JP2007122621 A JP 2007122621A JP 2007122621 A JP2007122621 A JP 2007122621A JP 2008016440 A JP2008016440 A JP 2008016440A
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JP
Japan
Prior art keywords
buffer layer
layer
forming
catalyst layer
carbon nanotube
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Pending
Application number
JP2007122621A
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English (en)
Japanese (ja)
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JP2008016440A5 (enExample
Inventor
Ha-Jin Kim
夏 辰 金
In-Taek Han
仁 澤 韓
Young-Chul Choi
榮 ▲てつ▼ 崔
Kwang-Seok Jeong
光 錫 鄭
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Samsung SDI Co Ltd
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Samsung SDI Co Ltd
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Application filed by Samsung SDI Co Ltd filed Critical Samsung SDI Co Ltd
Publication of JP2008016440A publication Critical patent/JP2008016440A/ja
Publication of JP2008016440A5 publication Critical patent/JP2008016440A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/939—Electron emitter, e.g. spindt emitter tip coated with nanoparticles

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2007122621A 2006-06-30 2007-05-07 炭素ナノチューブ構造体の形成方法及びそれを利用した電界放出素子の製造方法 Pending JP2008016440A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060060663A KR100803194B1 (ko) 2006-06-30 2006-06-30 탄소나노튜브 구조체 형성방법

Publications (2)

Publication Number Publication Date
JP2008016440A true JP2008016440A (ja) 2008-01-24
JP2008016440A5 JP2008016440A5 (enExample) 2010-04-02

Family

ID=38877189

Family Applications (1)

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JP2007122621A Pending JP2008016440A (ja) 2006-06-30 2007-05-07 炭素ナノチューブ構造体の形成方法及びそれを利用した電界放出素子の製造方法

Country Status (4)

Country Link
US (1) US7682973B2 (enExample)
JP (1) JP2008016440A (enExample)
KR (1) KR100803194B1 (enExample)
CN (1) CN101097826A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014140039A (ja) * 2008-02-25 2014-07-31 Smoltek Ab ナノ構造処理のための導電性補助層の形成及び選択的除去

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US7777291B2 (en) 2005-08-26 2010-08-17 Smoltek Ab Integrated circuits having interconnects and heat dissipators based on nanostructures
JP5181512B2 (ja) * 2007-03-30 2013-04-10 富士通セミコンダクター株式会社 電子デバイスの製造方法
CN104600057B (zh) 2007-09-12 2018-11-02 斯莫特克有限公司 使用纳米结构连接和粘接相邻层
JP2009245672A (ja) * 2008-03-31 2009-10-22 Univ Of Tokyo フィールドエミッション装置、ならびに、その製造方法
KR101015309B1 (ko) * 2008-06-27 2011-02-15 광주과학기술원 탄소 나노 튜브의 제조 방법
CN103154340B (zh) * 2010-10-18 2014-11-05 斯莫特克有限公司 纳米结构体器件和用于制造纳米结构体的方法
KR101402989B1 (ko) * 2013-06-12 2014-06-11 한국과학기술연구원 기판과의 결합력이 향상된 탄소나노튜브 기반 전계효과트랜지스터 소자의 제조방법 및 이에 의하여 제조된 탄소나노튜브 기반 전계효과트랜지스터 소자
US9053890B2 (en) * 2013-08-02 2015-06-09 University Health Network Nanostructure field emission cathode structure and method for making
CN105551911B (zh) * 2015-12-23 2017-09-05 中国电子科技集团公司第十二研究所 一种自对准栅极碳纳米管/纳米线场发射阴极制作方法
CN105428185B (zh) * 2015-12-23 2017-04-12 中国电子科技集团公司第十二研究所 一种准集成栅控碳纳米管/纳米线场发射阴极的制作方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015077A (ja) * 1999-06-15 2001-01-19 Cheol Jin Lee 白色光源及びその製造方法
JP2003123632A (ja) * 2001-10-19 2003-04-25 Sony Corp 電子放出体の製造方法、冷陰極電界電子放出素子の製造方法、並びに、冷陰極電界電子放出表示装置の製造方法
JP2003249163A (ja) * 2002-02-19 2003-09-05 Commiss Energ Atom 抵抗層上に形成された放出層を有する陰極構造
JP2005078850A (ja) * 2003-08-28 2005-03-24 Ulvac Japan Ltd 炭素系超微細冷陰極およびその製造方法
JP2005116231A (ja) * 2003-10-03 2005-04-28 Sony Corp 冷陰極電界電子放出表示装置の製造方法
JP2005340133A (ja) * 2004-05-31 2005-12-08 Sony Corp カソードパネル処理方法、並びに、冷陰極電界電子放出表示装置及びその製造方法
WO2006011468A1 (ja) * 2004-07-27 2006-02-02 Dainippon Screen Mfg. Co., Ltd. カーボンナノチューブデバイス、ならびに、その製造方法
JP2006224296A (ja) * 2005-02-19 2006-08-31 Samsung Sdi Co Ltd カーボンナノチューブ構造体及びその製造方法、並びにカーボンナノチューブ構造体を利用した電界放出素子及びその製造方法
WO2007003826A2 (fr) * 2005-05-30 2007-01-11 Commissariat A L'energie Atomique Procede de realisation de nanostructures
JP2007516919A (ja) * 2003-11-25 2007-06-28 ゼネラル・エレクトリック・カンパニイ 細長いナノ構造及び関連素子

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KR100434272B1 (ko) * 2001-06-28 2004-06-05 엘지전자 주식회사 탄소나노튜브의 수평성장 방법
KR20040050355A (ko) * 2002-12-10 2004-06-16 삼성에스디아이 주식회사 열화학기상증착법을 이용한 탄소나노튜브의 제조방법
KR100486613B1 (ko) * 2002-12-13 2005-05-03 한국전자통신연구원 탄소나노튜브를 이용한 전자빔 소스 모듈 및 그 제조 방법
JP3900094B2 (ja) 2003-03-14 2007-04-04 三菱電機株式会社 電子放出素子及びその製造方法ならびに表示装置
US7416993B2 (en) 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
JP4448356B2 (ja) * 2004-03-26 2010-04-07 富士通株式会社 半導体装置およびその製造方法
KR20060091521A (ko) * 2005-02-15 2006-08-21 삼성에스디아이 주식회사 탄소나노튜브의 형성방법 및 이를 이용한 전계방출소자의제조방법
KR100634547B1 (ko) * 2005-07-09 2006-10-13 삼성에스디아이 주식회사 링 타입 에미터를 갖는 전계방출소자 및 그 제조 방법

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015077A (ja) * 1999-06-15 2001-01-19 Cheol Jin Lee 白色光源及びその製造方法
JP2003123632A (ja) * 2001-10-19 2003-04-25 Sony Corp 電子放出体の製造方法、冷陰極電界電子放出素子の製造方法、並びに、冷陰極電界電子放出表示装置の製造方法
JP2003249163A (ja) * 2002-02-19 2003-09-05 Commiss Energ Atom 抵抗層上に形成された放出層を有する陰極構造
JP2005078850A (ja) * 2003-08-28 2005-03-24 Ulvac Japan Ltd 炭素系超微細冷陰極およびその製造方法
JP2005116231A (ja) * 2003-10-03 2005-04-28 Sony Corp 冷陰極電界電子放出表示装置の製造方法
JP2007516919A (ja) * 2003-11-25 2007-06-28 ゼネラル・エレクトリック・カンパニイ 細長いナノ構造及び関連素子
JP2005340133A (ja) * 2004-05-31 2005-12-08 Sony Corp カソードパネル処理方法、並びに、冷陰極電界電子放出表示装置及びその製造方法
WO2006011468A1 (ja) * 2004-07-27 2006-02-02 Dainippon Screen Mfg. Co., Ltd. カーボンナノチューブデバイス、ならびに、その製造方法
JP2006224296A (ja) * 2005-02-19 2006-08-31 Samsung Sdi Co Ltd カーボンナノチューブ構造体及びその製造方法、並びにカーボンナノチューブ構造体を利用した電界放出素子及びその製造方法
WO2007003826A2 (fr) * 2005-05-30 2007-01-11 Commissariat A L'energie Atomique Procede de realisation de nanostructures
JP2008546146A (ja) * 2005-05-30 2008-12-18 コミツサリア タ レネルジー アトミーク ナノ構造物の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014140039A (ja) * 2008-02-25 2014-07-31 Smoltek Ab ナノ構造処理のための導電性補助層の形成及び選択的除去
JP2016195257A (ja) * 2008-02-25 2016-11-17 スモルテック アーベー ナノ構造処理のための導電性補助層の形成及び選択的除去

Also Published As

Publication number Publication date
CN101097826A (zh) 2008-01-02
KR100803194B1 (ko) 2008-02-14
US7682973B2 (en) 2010-03-23
US20080003733A1 (en) 2008-01-03
KR20080002072A (ko) 2008-01-04

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