CN101097826A - 形成碳纳米管结构的方法及用其制造场发射器件的方法 - Google Patents

形成碳纳米管结构的方法及用其制造场发射器件的方法 Download PDF

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Publication number
CN101097826A
CN101097826A CNA2007100037415A CN200710003741A CN101097826A CN 101097826 A CN101097826 A CN 101097826A CN A2007100037415 A CNA2007100037415 A CN A2007100037415A CN 200710003741 A CN200710003741 A CN 200710003741A CN 101097826 A CN101097826 A CN 101097826A
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layer
buffer layer
forming
catalyst layer
exposed
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CNA2007100037415A
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English (en)
Chinese (zh)
Inventor
金夏辰
韩仁泽
崔荣喆
郑光锡
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Samsung SDI Co Ltd
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Samsung SDI Co Ltd
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Publication of CN101097826A publication Critical patent/CN101097826A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/939—Electron emitter, e.g. spindt emitter tip coated with nanoparticles

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Carbon And Carbon Compounds (AREA)
CNA2007100037415A 2006-06-30 2007-01-24 形成碳纳米管结构的方法及用其制造场发射器件的方法 Pending CN101097826A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR60663/06 2006-06-30
KR1020060060663A KR100803194B1 (ko) 2006-06-30 2006-06-30 탄소나노튜브 구조체 형성방법

Publications (1)

Publication Number Publication Date
CN101097826A true CN101097826A (zh) 2008-01-02

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CNA2007100037415A Pending CN101097826A (zh) 2006-06-30 2007-01-24 形成碳纳米管结构的方法及用其制造场发射器件的方法

Country Status (4)

Country Link
US (1) US7682973B2 (enExample)
JP (1) JP2008016440A (enExample)
KR (1) KR100803194B1 (enExample)
CN (1) CN101097826A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101552166B (zh) * 2008-03-31 2012-05-30 国立大学法人东京大学 场致发射装置及其制造方法
CN103154340A (zh) * 2010-10-18 2013-06-12 斯莫特克有限公司 纳米结构体器件和用于制造纳米结构体的方法
CN102007571B (zh) * 2008-02-25 2016-01-20 斯莫特克有限公司 纳米结构制造过程中的导电助层的沉积和选择性移除
CN105428185A (zh) * 2015-12-23 2016-03-23 中国电子科技集团公司第十二研究所 一种准集成栅控碳纳米管/纳米线场发射阴极的制作方法
CN105551911A (zh) * 2015-12-23 2016-05-04 中国电子科技集团公司第十二研究所 一种自对准栅极碳纳米管/纳米线场发射阴极制作方法

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US7777291B2 (en) 2005-08-26 2010-08-17 Smoltek Ab Integrated circuits having interconnects and heat dissipators based on nanostructures
JP5181512B2 (ja) * 2007-03-30 2013-04-10 富士通セミコンダクター株式会社 電子デバイスの製造方法
KR101487346B1 (ko) 2007-09-12 2015-01-28 스몰텍 에이비 인접 층들을 나노구조들과 연결하고 결합하는 방법
KR101015309B1 (ko) * 2008-06-27 2011-02-15 광주과학기술원 탄소 나노 튜브의 제조 방법
KR101402989B1 (ko) * 2013-06-12 2014-06-11 한국과학기술연구원 기판과의 결합력이 향상된 탄소나노튜브 기반 전계효과트랜지스터 소자의 제조방법 및 이에 의하여 제조된 탄소나노튜브 기반 전계효과트랜지스터 소자
US9053890B2 (en) * 2013-08-02 2015-06-09 University Health Network Nanostructure field emission cathode structure and method for making

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EP1061554A1 (en) * 1999-06-15 2000-12-20 Iljin Nanotech Co., Ltd. White light source using carbon nanotubes and fabrication method thereof
KR100434272B1 (ko) * 2001-06-28 2004-06-05 엘지전자 주식회사 탄소나노튜브의 수평성장 방법
JP3828397B2 (ja) * 2001-10-19 2006-10-04 ソニー株式会社 電子放出体の製造方法、冷陰極電界電子放出素子の製造方法、並びに、冷陰極電界電子放出表示装置の製造方法
FR2836280B1 (fr) * 2002-02-19 2004-04-02 Commissariat Energie Atomique Structure de cathode a couche emissive formee sur une couche resistive
KR20040050355A (ko) * 2002-12-10 2004-06-16 삼성에스디아이 주식회사 열화학기상증착법을 이용한 탄소나노튜브의 제조방법
KR100486613B1 (ko) * 2002-12-13 2005-05-03 한국전자통신연구원 탄소나노튜브를 이용한 전자빔 소스 모듈 및 그 제조 방법
JP3900094B2 (ja) 2003-03-14 2007-04-04 三菱電機株式会社 電子放出素子及びその製造方法ならびに表示装置
JP2005078850A (ja) * 2003-08-28 2005-03-24 Ulvac Japan Ltd 炭素系超微細冷陰極およびその製造方法
US7416993B2 (en) 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
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US20050112048A1 (en) * 2003-11-25 2005-05-26 Loucas Tsakalakos Elongated nano-structures and related devices
JP4448356B2 (ja) * 2004-03-26 2010-04-07 富士通株式会社 半導体装置およびその製造方法
JP2005340133A (ja) * 2004-05-31 2005-12-08 Sony Corp カソードパネル処理方法、並びに、冷陰極電界電子放出表示装置及びその製造方法
WO2006011468A1 (ja) * 2004-07-27 2006-02-02 Dainippon Screen Mfg. Co., Ltd. カーボンナノチューブデバイス、ならびに、その製造方法
KR20060091521A (ko) * 2005-02-15 2006-08-21 삼성에스디아이 주식회사 탄소나노튜브의 형성방법 및 이를 이용한 전계방출소자의제조방법
KR100682863B1 (ko) * 2005-02-19 2007-02-15 삼성에스디아이 주식회사 탄소나노튜브 구조체 및 그 제조방법과, 탄소나노튜브 구조체를 이용한 전계방출소자 및 그 제조방법
FR2886284B1 (fr) * 2005-05-30 2007-06-29 Commissariat Energie Atomique Procede de realisation de nanostructures
KR100634547B1 (ko) * 2005-07-09 2006-10-13 삼성에스디아이 주식회사 링 타입 에미터를 갖는 전계방출소자 및 그 제조 방법

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102007571B (zh) * 2008-02-25 2016-01-20 斯莫特克有限公司 纳米结构制造过程中的导电助层的沉积和选择性移除
CN105441903A (zh) * 2008-02-25 2016-03-30 斯莫特克有限公司 纳米结构制造过程中的导电助层的沉积和选择性移除
CN105441903B (zh) * 2008-02-25 2018-04-24 斯莫特克有限公司 纳米结构制造过程中的导电助层的沉积和选择性移除
CN101552166B (zh) * 2008-03-31 2012-05-30 国立大学法人东京大学 场致发射装置及其制造方法
CN103154340A (zh) * 2010-10-18 2013-06-12 斯莫特克有限公司 纳米结构体器件和用于制造纳米结构体的方法
CN103154340B (zh) * 2010-10-18 2014-11-05 斯莫特克有限公司 纳米结构体器件和用于制造纳米结构体的方法
US9206532B2 (en) 2010-10-18 2015-12-08 Smoltek Ab Nanostructure device and method for manufacturing nanostructures
CN105428185A (zh) * 2015-12-23 2016-03-23 中国电子科技集团公司第十二研究所 一种准集成栅控碳纳米管/纳米线场发射阴极的制作方法
CN105551911A (zh) * 2015-12-23 2016-05-04 中国电子科技集团公司第十二研究所 一种自对准栅极碳纳米管/纳米线场发射阴极制作方法
CN105428185B (zh) * 2015-12-23 2017-04-12 中国电子科技集团公司第十二研究所 一种准集成栅控碳纳米管/纳米线场发射阴极的制作方法

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US20080003733A1 (en) 2008-01-03
KR20080002072A (ko) 2008-01-04
JP2008016440A (ja) 2008-01-24
KR100803194B1 (ko) 2008-02-14
US7682973B2 (en) 2010-03-23

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