JP2008004841A5 - - Google Patents

Download PDF

Info

Publication number
JP2008004841A5
JP2008004841A5 JP2006174429A JP2006174429A JP2008004841A5 JP 2008004841 A5 JP2008004841 A5 JP 2008004841A5 JP 2006174429 A JP2006174429 A JP 2006174429A JP 2006174429 A JP2006174429 A JP 2006174429A JP 2008004841 A5 JP2008004841 A5 JP 2008004841A5
Authority
JP
Japan
Prior art keywords
film
forming
copper wiring
insulating film
fluorine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006174429A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008004841A (ja
JP5194393B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2006174429A external-priority patent/JP5194393B2/ja
Priority to JP2006174429A priority Critical patent/JP5194393B2/ja
Priority to CNA2007800206271A priority patent/CN101461043A/zh
Priority to US12/305,049 priority patent/US20090134518A1/en
Priority to KR1020087029046A priority patent/KR20090003368A/ko
Priority to EP07744793A priority patent/EP2034517A4/en
Priority to PCT/JP2007/061450 priority patent/WO2007148535A1/ja
Priority to TW096122758A priority patent/TW200811953A/zh
Publication of JP2008004841A publication Critical patent/JP2008004841A/ja
Priority to IL195951A priority patent/IL195951A0/en
Publication of JP2008004841A5 publication Critical patent/JP2008004841A5/ja
Publication of JP5194393B2 publication Critical patent/JP5194393B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2006174429A 2006-06-23 2006-06-23 半導体装置の製造方法 Expired - Fee Related JP5194393B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2006174429A JP5194393B2 (ja) 2006-06-23 2006-06-23 半導体装置の製造方法
CNA2007800206271A CN101461043A (zh) 2006-06-23 2007-06-06 半导体装置及半导体装置的制造方法
US12/305,049 US20090134518A1 (en) 2006-06-23 2007-06-06 Semiconductor device and manufacturing method of semiconductor device
KR1020087029046A KR20090003368A (ko) 2006-06-23 2007-06-06 반도체 장치 및 반도체 장치의 제조 방법
EP07744793A EP2034517A4 (en) 2006-06-23 2007-06-06 SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD
PCT/JP2007/061450 WO2007148535A1 (ja) 2006-06-23 2007-06-06 半導体装置及び半導体装置の製造方法
TW096122758A TW200811953A (en) 2006-06-23 2007-06-23 Semiconductor device and semiconductor device manufacturing method
IL195951A IL195951A0 (en) 2006-06-23 2008-12-15 Semiconductor device and manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006174429A JP5194393B2 (ja) 2006-06-23 2006-06-23 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2008004841A JP2008004841A (ja) 2008-01-10
JP2008004841A5 true JP2008004841A5 (enExample) 2009-08-13
JP5194393B2 JP5194393B2 (ja) 2013-05-08

Family

ID=38833277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006174429A Expired - Fee Related JP5194393B2 (ja) 2006-06-23 2006-06-23 半導体装置の製造方法

Country Status (8)

Country Link
US (1) US20090134518A1 (enExample)
EP (1) EP2034517A4 (enExample)
JP (1) JP5194393B2 (enExample)
KR (1) KR20090003368A (enExample)
CN (1) CN101461043A (enExample)
IL (1) IL195951A0 (enExample)
TW (1) TW200811953A (enExample)
WO (1) WO2007148535A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120049239A (ko) 2009-06-26 2012-05-16 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법
JP5364765B2 (ja) 2011-09-07 2013-12-11 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
US8691709B2 (en) * 2011-09-24 2014-04-08 Tokyo Electron Limited Method of forming metal carbide barrier layers for fluorocarbon films
JP2015195282A (ja) * 2014-03-31 2015-11-05 東京エレクトロン株式会社 成膜方法、半導体製造方法及び半導体装置
JP5778820B1 (ja) * 2014-04-09 2015-09-16 日本特殊陶業株式会社 スパークプラグ
KR20170038824A (ko) * 2014-08-04 2017-04-07 제이엑스 에네루기 가부시키가이샤 요철 패턴을 가지는 부재의 제조 방법
WO2016080034A1 (ja) * 2014-11-18 2016-05-26 三菱電機株式会社 信号伝送絶縁デバイス及びパワー半導体モジュール

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03140496A (ja) * 1989-10-25 1991-06-14 Daido Steel Co Ltd 母材の表面着色方法
JP3158598B2 (ja) * 1991-02-26 2001-04-23 日本電気株式会社 半導体装置およびその製造方法
JP4355039B2 (ja) * 1998-05-07 2009-10-28 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
JP2000208622A (ja) * 1999-01-12 2000-07-28 Tokyo Electron Ltd 半導体装置及びその製造方法
JP4260764B2 (ja) * 1999-03-09 2009-04-30 東京エレクトロン株式会社 半導体装置の製造方法
DE60037395T2 (de) * 1999-03-09 2008-11-27 Tokyo Electron Ltd. Herstellung eines halbleiter-bauelementes
EP1077479A1 (en) * 1999-08-17 2001-02-21 Applied Materials, Inc. Post-deposition treatment to enchance properties of Si-O-C low K film
CN101577247B (zh) * 2000-09-18 2011-12-14 Acm研究公司 把金属和超低k值电介质集成
JP3817463B2 (ja) * 2001-11-12 2006-09-06 新光電気工業株式会社 多層配線基板の製造方法
JP2005026386A (ja) * 2003-07-01 2005-01-27 Matsushita Electric Ind Co Ltd 半導体装置
JP4413556B2 (ja) * 2003-08-15 2010-02-10 東京エレクトロン株式会社 成膜方法、半導体装置の製造方法
JP2005109138A (ja) 2003-09-30 2005-04-21 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP4715207B2 (ja) * 2004-01-13 2011-07-06 東京エレクトロン株式会社 半導体装置の製造方法及び成膜システム
JP4194521B2 (ja) 2004-04-07 2008-12-10 東京エレクトロン株式会社 半導体装置の製造方法
JP4555143B2 (ja) * 2004-05-11 2010-09-29 東京エレクトロン株式会社 基板の処理方法
US20060113675A1 (en) * 2004-12-01 2006-06-01 Chung-Liang Chang Barrier material and process for Cu interconnect
JP2006190884A (ja) * 2005-01-07 2006-07-20 Toshiba Corp 半導体装置及び半導体装置の製造方法
JP2006135363A (ja) * 2006-02-14 2006-05-25 Renesas Technology Corp 半導体装置および半導体装置の製造方法

Similar Documents

Publication Publication Date Title
JP2007515775A5 (enExample)
TW200717710A (en) Method of manufacturing semiconductor device
JP2009194322A5 (enExample)
JP2010267899A5 (enExample)
JP2011044517A5 (enExample)
JP2013115289A5 (enExample)
JP2009033145A5 (enExample)
JP2008501239A5 (enExample)
JP2010245334A5 (enExample)
JP2010521061A5 (enExample)
JP2010258213A5 (ja) 半導体装置
TW200618174A (en) Method of manufacturing semiconductor device
TW200518263A (en) Method for fabricating copper interconnects
WO2010009716A3 (de) Strahlungsemittierende vorrichtung und verfahren zur herstellung einer strahlungsemittierenden vorrichtung
TW200733309A (en) Semiconductor device having electrode and manufacturing method thereof
WO2007124209A3 (en) Stressor integration and method thereof
TW200629422A (en) Method of manufacturing a capaciotr and a metal gate on a semiconductor device
JP2011009723A5 (enExample)
JP2009278072A5 (enExample)
TW200710966A (en) Semiconductor device and method for production thereof
JP2007214567A5 (enExample)
TW200731537A (en) Semiconductor device and manufacturing method thereof
JP2009260322A5 (ja) 半導体装置の作製方法
JP2008004841A5 (enExample)
TW200729516A (en) Semiconductor device and method for fabricating the same