JP2007536753A - 有機電子デバイス - Google Patents
有機電子デバイス Download PDFInfo
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- JP2007536753A JP2007536753A JP2007512005A JP2007512005A JP2007536753A JP 2007536753 A JP2007536753 A JP 2007536753A JP 2007512005 A JP2007512005 A JP 2007512005A JP 2007512005 A JP2007512005 A JP 2007512005A JP 2007536753 A JP2007536753 A JP 2007536753A
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/868—Arrangements for polarized light emission
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
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- Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31725—Of polyamide
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Optics & Photonics (AREA)
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Abstract
Description
2.とりわけ蛍光OLEDにおいて駆動電圧は相当高く、パワー効率を改善するためにさらに低減される必要がある。このことは、特に、携帯アプリケーションについて非常に重要である。
3.駆動電流は、同様に、近年低減されてはいるが、パワー効率を改善するためには、なおさらに低減される必要がある。
4.電子デバイスの駆動寿命は未だに短く、従って、今日のところ単純なアプリケーションを商業的に達成することができるのみである。
1.励起状態をもたらす少なくとも1つのフォトンの吸収(エキシトン)、および
2.2つの反対に荷電した分子イオン(同じタイプのものか異なるもの;理想的にはフリーラジカルカチオンとフリーラジカルアニオン)における、量子収率<1の隣接する分子との励起状態の緩和、および
3.解離(dissociation)、これは、2つの異なる電極の選択を通じて促進される(これらは、固有のE電界を生じさせるためである)、
4.同一のタイプのものであるか異なり得る隣接する、またはより遠い分子へのエネルギ伝達が、1および2の間で起こってもよい(〜拡散)
を意味する。
包接化合物の調製:
以下の合成を、他に示さない限り、保護ガス雰囲気下で行った。出発材料を、アルドリッチ社から購入した(溶媒、ヨウ素、ヨウ化カリウム、ヨウ化テトラブチルアンモニウム)。用いたデンプンは、商標 Mondamin でユニリーバ(Unilever)により市販されている、水溶性部のジャガイモデンプンであった。
5.0gのデンプンを、200mlの蒸留水中に懸濁した。この懸濁液を90℃で2時間加温し、この間に、透過光線中でわずかに乳白光を発する透明な溶液が形成された。50mlの蒸留水と100mlのエタノールの混合物中の、0.254g(1mmol)のヨウ素と0.166g(1mmol)のヨウ化カリウム溶液を、上記溶液に90℃でゆっくりと滴下して加えた。滴下完了後に紺青色である混合物を、16時間に渡って室温にまで冷却させた。続いて、1μフィルタを通してろ過した。このようにして得られた混合物を、以下に記載するコーティングに用いた。
例1と同様の手法。0.508g(2mmol)のヨウ素と、0.166g(1mmol)のヨウ化カリウムを用いた。
例1と同様の手法。0.761g(3mmol)のヨウ素と、0.166g(1mmol)のヨウ化カリウムを用いた。
例1と同様の手法。0.508g(2mmol)のヨウ素と、0.370g(1mmol)のヨウ化テトラブチルアンモニウムを用いた。
正孔注入材料としての包接化合物の使用
OLEDを、WO 05/003253 または WO 04/058911 に従う一般方法(これは、各状況に対する個々のケースに適合させる(例えば、最適な効率または色を達成するための層の厚さの変化)必要がある)により製造した。
参照 60nmのPEDOT(ポリ(3,4−エチレンジオキシ−2,5−チオフェン)、H.C.シュターク(Starck)社から購入、水からスピンコーティング、100℃、10分乾燥、
正孔輸送層(HTL) 20nmのNaphDATA(蒸着;SynTec社から購入;4,4’,4’’−トリス(N−1−ナフチル−N−フェニルアミノ)トリフェニルアミン)、
正孔輸送層(HTL) 20nmのS−TAD(蒸着;WO 99/12888 に従って調製;2,2’,7,7’−テトラキス−(ジフェニルアミノ)スピロ−9,9’−ビフルオレン)、
発光層(EML) EML−F=リン光OLED:スピロ−DPVBi(WO 02/10093 に従って調製、2,2’,7,7’−テトラキス(2,2’−ジフェニルビニル)スピロ−9,9’−ビフルオレン)、EML−P=リン光OLED:マトリックス材料M1(WO 04/093207 に従って調製、10%のIr(PPy)3(WO 02/060910 に従って調製)でドープされたビス(9,9’−スピロビフルオレン−2−イル)ケトン)、
電子伝導体(ETC) 20nm(蒸着:SynTec社から購入したAIQ3;トリス(キノリナト)アルミニウム(III))、
Ba/Al(陰極) 3nmのBaの上の150nmのAl。
Claims (25)
- 1種以上の包接化合物を含む有機電子デバイスであって、前記包接化合物が、発光に関与しない、あるいは直接的に関与しないことを特徴とする有機電子デバイス。
- 前記包接化合物が、電荷発生材料として用いられることを特徴とする請求項1に記載の有機電子デバイス。
- 前記包接化合物が、電荷注入材料および/または電荷輸送材料として用いられることを特徴とする請求項1に記載の有機電子デバイス。
- 前記包接化合物が、正孔注入材料および/または正孔輸送材料として用いられることを特徴とする請求項3に記載の有機電子デバイス。
- 前記包接化合物が、ホスト分子として、定義された実験式を有する低分子量の化合物を含有することを特徴とする請求項1〜4の一項以上に記載の有機電子デバイス。
- 前記包接化合物のホスト分子が、大環状分子、大炭素環式化合物、クラウンエーテル、クリプタンド、シクロデキストリン、シクロファン、カリックスアレーン、デプシド、デプシペプチド、マクロラクトン、シクロペプチド、およびレゾルシノールアレーン(resorcinolarene)の群から選択されることを特徴とする請求項5に記載の有機電子デバイス。
- 前記包接化合物のホスト分子が、オリゴマーおよび/またはポリマーの群から選択されることを特徴とする請求項1〜4の一項以上に記載の有機電子デバイス。
- 前記包接化合物のホスト分子が、合成オリゴマーおよび/または合成ポリマーの群から選択されることを特徴とする請求項7に記載の有機電子デバイス。
- 前記包接化合物のホスト分子が、ポリフェニレン、ポリ−パラ−フェニレンビニレン、ポリエーテル、ポリエステル、ポリアミド、ポリケトン、ポリカルバゾール、ポリビニルアルコール、ポリビニルエーテル、またはポリウレタンの群から選択されることを特徴とする請求項8に記載の有機電子デバイス。
- 前記包接化合物のホスト分子が、合成的に修飾されていてもよい天然オリゴマーおよび/または天然ポリマーの群から選択されることを特徴とする請求項7に記載の有機電子デバイス。
- 前記包接化合物のホスト分子が、オリゴ糖および/若しくは多糖、オリゴペプチドおよび/若しくはポリペプチド、RNA、またはDNAの群から選択されることを特徴とする請求項10に記載の有機電子デバイス。
- 用いられる前記包接化合物ホスト分子が、グリコーゲン、セルロース、修飾セルロース、水和セルロース、デンプン、修飾デンプン、アミロース、修飾アミロース、アミロペクチン、および/または修飾アミロペクチンであることを特徴とする請求項11に記載の有機電子デバイス。
- 前記包接化合物のホスト分子が、有機溶媒および/または水中に可溶であるか、有機溶媒および/または水中で膨潤することを特徴とする請求項1〜12の一項以上に記載の有機電子デバイス。
- 前記包接化合物のゲストが、無機化合物であることを特徴とする請求項1〜13の一項以上に記載の有機電子デバイス。
- 前記包接化合物のゲストが、ポリアニオンであることを特徴とする請求項1〜14の一項以上に記載の有機電子デバイス。
- 前記包接化合物のゲストが、ポリハライドアニオンであることを特徴とする請求項14および15の一項以上に記載の有機電子デバイス。
- 前記包接化合物のゲストが、ポリヨウ化物アニオンであることを特徴とする請求項16に記載の有機電子デバイス。
- 前記包接化合物が、オリゴ糖および/若しくは多糖、オリゴペプチドおよび/若しくはポリペプチド、RNA、またはDNA(これらのそれぞれは、合成的に修飾されていてもよい)の群から選択される天然の、天然と同質の、天然と類似のオリゴマーまたはポリマー中に取り込まれたポリハライドイオンから成ることを特徴とする請求項1〜17の一項以上に記載の有機電子デバイス。
- 前記包接化合物が、らせん構造のアミロース中に取り込まれたポリヨウ化物イオンと、対イオンから成ることを特徴とする請求項18に記載の有機電子デバイス。
- 正孔注入層および/または正孔輸送層としての、請求項19に記載の有機電子デバイス。
- 1以上の層が、昇華プロセスを用いて設けられることを特徴とする請求項1〜20の一項以上に記載の有機電子デバイス。
- 1以上の層が、OVPD(有機気相成長(organic vapour phase deposition))プロセスにより、またはキャリアガス昇華を用いて設けられることを特徴とする有機電子デバイス。
- 1以上の層が、溶液から、またはいずれもの所望の印刷法を用いて製造されることを特徴とする請求項1〜20の一項以上に記載の有機電子デバイス。
- 前記包接化合物を含む層が、さらに、偏光子として働くことを特徴とする請求項1〜23の一項以上に記載の有機電子デバイス。
- 有機発光ダイオード、有機太陽電池、有機トランジスタ、有機集積回路、有機レーザダイオード、または有機光受容体であることを特徴とする請求項1〜24の一項以上に記載の有機電子デバイス。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2014050100A1 (ja) * | 2012-09-26 | 2014-04-03 | 新日鐵住金株式会社 | 電極活物質材料、電極活物質材料の製造方法、電極、電池、及び、クラスレート化合物の使用方法 |
CN104813520A (zh) * | 2012-09-26 | 2015-07-29 | 新日铁住金株式会社 | 电极活性物质材料、电极活性物质材料的制造方法、电极、电池、以及包合物的使用方法 |
JPWO2014050100A1 (ja) * | 2012-09-26 | 2016-08-22 | 新日鐵住金株式会社 | 電極活物質材料、電極活物質材料の製造方法、電極、電池、及び、クラスレート化合物の使用方法 |
CN104813520B (zh) * | 2012-09-26 | 2019-01-01 | 新日铁住金株式会社 | 电极活性物质材料、电极活性物质材料的制造方法、电极、电池、以及包合物的使用方法 |
WO2014069217A1 (ja) * | 2012-11-02 | 2014-05-08 | シャープ株式会社 | 偏光素子、偏光素子の製造方法、液晶表示装置、及び、液晶表示装置の製造方法 |
Also Published As
Publication number | Publication date |
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US7989071B2 (en) | 2011-08-02 |
CN1950958A (zh) | 2007-04-18 |
KR20070015561A (ko) | 2007-02-05 |
US20080026229A1 (en) | 2008-01-31 |
WO2005109540A2 (de) | 2005-11-17 |
EP1745522A2 (de) | 2007-01-24 |
WO2005109540A3 (de) | 2005-12-29 |
DE102004021989A1 (de) | 2005-12-15 |
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