JP2007533853A - 高融点の金属の炭化物層を析出するための方法 - Google Patents
高融点の金属の炭化物層を析出するための方法 Download PDFInfo
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- JP2007533853A JP2007533853A JP2007508741A JP2007508741A JP2007533853A JP 2007533853 A JP2007533853 A JP 2007533853A JP 2007508741 A JP2007508741 A JP 2007508741A JP 2007508741 A JP2007508741 A JP 2007508741A JP 2007533853 A JP2007533853 A JP 2007533853A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
- H01J37/3233—Discharge generated by other radiation using charged particles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0635—Carbides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (11)
- 少なくとも一種類の高融点の金属(3)の炭化物から成る層を少なくとも1つの対象物(8)に高率電子ビーム蒸着によって真空チャンバ(1)内で析出するための方法において、真空チャンバ(1)内に反応性ガスの流入によって炭素含有の雰囲気を発生させ;高融点の金属(3)を電子ビーム(5)によって蒸発させ;析出をプラズマによって助成し、この場合、該プラズマを拡散アーク放電によって、蒸発させたい高融点の金属(3)の表面に発生させ;被覆率が、少なくとも20nm/sであり、析出の間の対象物温度を50℃〜500℃の間に保持することを特徴とする、少なくとも一種類の高融点の金属の炭化物から成る層を少なくとも1つの対象物に高率電子ビーム蒸着によって真空チャンバ内で析出するための方法。
- 高融点の金属(3)として、タングステン、ジルコニウムまたは有利にはチタンを使用する、請求項1記載の方法。
- 炭素含有の雰囲気を、真空チャンバ内へのアセチレン、メタンまたはブタンの流入によって発生させる、請求項1または2記載の方法。
- 反応性ガスを真空チャンバ(1)内に流入させ、これによって、化学量論的な炭化物層を対象物(8)に析出する、請求項1から3までのいずれか1項記載の方法。
- 付加的な反応性ガスとして、窒素含有のまたは/かつ酸素含有のガスを流入させる、請求項1から4までのいずれか1項記載の方法。
- 対象物(8)に50V〜300Vの負のバイアス電圧を印加する、請求項1から5までのいずれか1項記載の方法。
- バイアス電圧を、直流電圧として印加するかまたは中間周波にまたは高周波にパルス化された電圧として印加する、請求項6記載の方法。
- 真空チャンバ(1)内に1×10−3mbar〜5×10−2mbarの反応性ガス圧を発生させる、請求項1から7までのいずれか1項記載の方法。
- プラズマ活性化時に少なくとも100Aのアーク電流を形成する、請求項1から8までのいずれか1項記載の方法。
- 被覆率を50nm/s〜250nm/sの範囲内で形成する、請求項1から9までのいずれか1項記載の方法。
- 10nm〜10μm、有利には1μm〜5μmの層厚さを析出する、請求項1から10までのいずれか1項記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004019169.7 | 2004-04-20 | ||
DE102004019169A DE102004019169A1 (de) | 2004-04-20 | 2004-04-20 | Verfahren zum Abscheiden von Karbidschichten hochschmelzender Metalle |
PCT/EP2005/001851 WO2005109466A1 (de) | 2004-04-20 | 2005-02-23 | Verfahren zum abscheiden von karbidschichten hochschmelzender metalle |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007533853A true JP2007533853A (ja) | 2007-11-22 |
JP4868534B2 JP4868534B2 (ja) | 2012-02-01 |
Family
ID=34960529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007508741A Expired - Fee Related JP4868534B2 (ja) | 2004-04-20 | 2005-02-23 | 高融点の金属の炭化物層を析出するための方法 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1738395A1 (ja) |
JP (1) | JP4868534B2 (ja) |
KR (1) | KR20060134994A (ja) |
CN (1) | CN1922708A (ja) |
DE (1) | DE102004019169A1 (ja) |
WO (1) | WO2005109466A1 (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6096754A (ja) * | 1983-10-28 | 1985-05-30 | Japan Atom Energy Res Inst | チタンカ−バイド厚膜の被覆方法 |
JPS63105960A (ja) * | 1986-06-07 | 1988-05-11 | Kawasaki Steel Corp | 密着性に優れたイオンプレ−テイング被膜をそなえる金属ストリツプの製造方法およびイオンプレ−テイング装置 |
JPH03232957A (ja) * | 1990-02-09 | 1991-10-16 | Nippon Steel Corp | 耐摩耗部材の製造方法 |
JPH05239630A (ja) * | 1992-02-28 | 1993-09-17 | Nkk Corp | イオンプレーティング方法及び装置 |
JPH06264213A (ja) * | 1993-03-12 | 1994-09-20 | Sekisui Chem Co Ltd | チタン系薄膜被覆金属部材 |
US5614273A (en) * | 1993-10-27 | 1997-03-25 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung, E.V. | Process and apparatus for plasma-activated electron beam vaporization |
JP2000064028A (ja) * | 1998-06-09 | 2000-02-29 | Sumitomo Heavy Ind Ltd | Cu成膜方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5227203A (en) * | 1992-02-24 | 1993-07-13 | Nkk Corporation | Ion-plating method and apparatus therefor |
DE4336680C2 (de) * | 1993-10-27 | 1998-05-14 | Fraunhofer Ges Forschung | Verfahren zum Elektronenstrahlverdampfen |
-
2004
- 2004-04-20 DE DE102004019169A patent/DE102004019169A1/de not_active Ceased
-
2005
- 2005-02-23 CN CNA2005800053031A patent/CN1922708A/zh active Pending
- 2005-02-23 KR KR1020067019342A patent/KR20060134994A/ko not_active Application Discontinuation
- 2005-02-23 EP EP05707580A patent/EP1738395A1/de not_active Ceased
- 2005-02-23 WO PCT/EP2005/001851 patent/WO2005109466A1/de not_active Application Discontinuation
- 2005-02-23 JP JP2007508741A patent/JP4868534B2/ja not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6096754A (ja) * | 1983-10-28 | 1985-05-30 | Japan Atom Energy Res Inst | チタンカ−バイド厚膜の被覆方法 |
JPS63105960A (ja) * | 1986-06-07 | 1988-05-11 | Kawasaki Steel Corp | 密着性に優れたイオンプレ−テイング被膜をそなえる金属ストリツプの製造方法およびイオンプレ−テイング装置 |
JPH03232957A (ja) * | 1990-02-09 | 1991-10-16 | Nippon Steel Corp | 耐摩耗部材の製造方法 |
JPH05239630A (ja) * | 1992-02-28 | 1993-09-17 | Nkk Corp | イオンプレーティング方法及び装置 |
JPH06264213A (ja) * | 1993-03-12 | 1994-09-20 | Sekisui Chem Co Ltd | チタン系薄膜被覆金属部材 |
US5614273A (en) * | 1993-10-27 | 1997-03-25 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung, E.V. | Process and apparatus for plasma-activated electron beam vaporization |
JP2000064028A (ja) * | 1998-06-09 | 2000-02-29 | Sumitomo Heavy Ind Ltd | Cu成膜方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2005109466A1 (de) | 2005-11-17 |
KR20060134994A (ko) | 2006-12-28 |
CN1922708A (zh) | 2007-02-28 |
JP4868534B2 (ja) | 2012-02-01 |
EP1738395A1 (de) | 2007-01-03 |
DE102004019169A1 (de) | 2005-11-17 |
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