Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/0021—Reactive sputtering or evaporation
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/0635—Carbides
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/24—Vacuum evaporation
  • C23C14/28—Vacuum evaporation by wave energy or particle radiation
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/24—Vacuum evaporation
  • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/24—Vacuum evaporation
  • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
  • C23C14/325—Electric arc evaporation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32321—Discharge generated by other radiation
  • H01J37/3233—Discharge generated by other radiation using charged particles

Definitions

• the invention relates to a method for depositing hard material layers made of carbides of high-melting metals such as titanium, tungsten, zirconium or alloys, which mainly consist of high-melting elements. Elements with a melting point> 1400 ° C. are regarded as high-melting in the sense of the invention. Objects provided with such hard material layers are preferably used in cutting tools or pressing elements which are subject to wear due to friction and / or pressure or if corrosion-protecting properties are to be realized.
• the main requirements for hard material layers made of carbides of high-melting metals are high hardness and abrasion resistance as well as good adhesion to a respective base body.
• the invention is therefore based on the technical problem of creating a method with which hard material layers made of carbides of high-melting metals can be deposited at a deposition rate of at least 20 nm / s.
• the deposited layers should have a high hardness, wear and abrasion resistance.
• layers of carbides of at least one high-melting metal are deposited on at least one object by means of high-rate electron beam evaporation in a vacuum chamber, in that a carbon-containing atmosphere is generated in the vacuum chamber by the inlet of a reactive gas; the high-melting metal is evaporated by means of an electron beam; the deposition is supported by a plasma, the plasma being generated by means of diffuse arc discharge on the surface of the high-melting metal to be evaporated; the coating rate is at least 20 nm / s and the object temperature is kept between 50 ° C. and 500 ° C. during the deposition.
• Tungsten, zirconium or, preferably, titanium can be used as high-melting metals. These elements are suitable for forming hard material layers with good wear properties. Among refractory metals in the sense of the invention, however, alloys are to be seen in which one of the aforementioned metals predominates.
• An essential step of the method according to the invention is the generation of a plasma by means of diffuse arc discharge.
• a high-energy electron beam impinging on the surface of the evaporation material is periodically deflected so quickly and at high frequency that at least part of the surface of the material to be evaporated is heated almost uniformly and ultimately evaporated.
• the material to be evaporated which is located, for example, in a crucible, is switched as the cathode of a high-current arc discharge.
• a so-called diffuse arc is formed, which burns essentially in the area of the surface of the evaporation material heated by the electron beam.
• a diffuse arc discharge Compared to a normal arc discharge, in which a base point with an extremely high current density is formed a diffuse arc discharge a diffuse and areal expansion on the material to be evaporated, which essentially corresponds to the quasi-uniformly heated surface of the material to be evaporated. As a result, a substantial proportion of the metal vapor generated is ionized and thus a high degree of ionization is achieved overall, which contributes to the formation of a dense layer with high hardness.
• the use of diffuse arc discharge has the further advantage that it does not emit any splashes and is therefore particularly suitable for large-area plasma-activated vapor deposition.
• acetylene (C 2 H 2 ) is admitted as a reactive gas into a vacuum chamber and thus a carbon-containing atmosphere is created in the vacuum chamber. Due to a triple bond between the two carbon atoms, this gas has a particularly high reactivity.
• methane or butane for example, can also be let into the vacuum chamber.
• a reactive gas pressure within the vacuum chamber of 1x10 "3 mbar to 5x10 " 2 mbar is suitable for this.
• the hardness of a carbide layer deposited according to the invention can also be increased by introducing a nitrogen or / and an oxygen-containing gas into the vacuum chamber as an additional reactive gas.
• a negative bias voltage in a range from 50 V to 300 V to an object to be coated, by means of which ionized steam or reactive gas particles are accelerated towards the surface of the object, has an advantageous effect on the layer properties such as wear resistance, hardness and density of the Layer off.
• This negative bias voltage can be switched, for example, with respect to a crucible in which the material to be evaporated is located, or with an anode.
• a direct voltage or a medium-frequency or high-frequency pulsed voltage can be applied to the object to be coated as bias voltage.
• pulse bias has a particularly advantageous effect on the stability of the process control, in particular when depositing carbide layers that are not electrically conductive.
• an arc current of the diffuse arc discharge to the surface of the evaporation material of at least 100 A must be formed.
• maximum deposition rates of approximately 10 nm / s can be achieved when depositing hard carbide layers, for example by means of magnetron sputtering, the method according to the invention enables deposition rates of several hundred nm / s. Very good layer properties are achieved with deposition rates in a range from 50 nm / s to 250 nm / s and with layer thicknesses from 10 nm to 10 ⁇ m, preferably 1 ⁇ m to 5 ⁇ m.
• At least one underlayer is applied between a carbide hard material layer and an object to be coated. This compensates for the mechanical stresses that occur and thus improves the adhesion of the hard material layer.
• the invention is explained in more detail below on the basis of a preferred exemplary embodiment.
• the single figure shows schematically a device with which the method according to the invention can be carried out.
• An evaporator crucible 2 is arranged in a vacuum chamber 1, in which titanium 3 is to be evaporated as the evaporation material.
• a high-performance axial electron beam gun 4 Connected to the vacuum chamber is a high-performance axial electron beam gun 4, which generates an electron beam 5 which is deflected onto the surface of the evaporation material 3 located in the evaporation crucible 2 by means of an electromagnetic deflection device (not shown) and thus heats the evaporation material 3 and ultimately evaporates it.
• An electrode 6 is arranged above the evaporator crucible 3, which encloses the vapor space and can be connected to a positive voltage with respect to the evaporator crucible 3.
• An object 8 made of steel moved over the electrode 6 on a transport device 7 is coated with the evaporated material.
• the high-energy electron beam 5 with an output of approximately 50 kW is deflected quickly, at high frequency and periodically in such a way that at least part of the surface of the evaporation material 3 is heated and evaporated in a quasi-uniform manner.
• a direct voltage of approximately 30 V applied between the electrode 6 and the evaporator crucible 2 by means of a power supply device 9 causes a so-called diffuse arc discharge to be formed with a current of approximately 300 A, which burns essentially on the surface of the evaporation material 3 that is quasi uniformly heated by means of the electron beam 5. This achieves a high degree of ionization of the steam.
• An attached to the object 8 by means of a power supply device 10 bias voltage of -100 V causes the ionized vapor particles to accelerate towards the surface of the object 8.
• TiC layers By admitting acetylene gas into the vacuum chamber 1 by means of a gas inlet system 11 during the titanium evaporation, 3 ⁇ m thick, stoichiometric TiC layers are deposited on the object 8 with a stationary coating rate of approximately 100 nm / s.
• the object 8 is kept at a temperature of 200 ° C. Studies have shown that TiC layers produced in this way have a high hardness of 33 GPa and high wear resistance.

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• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Materials Engineering (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Mechanical Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Plasma & Fusion (AREA)
• Analytical Chemistry (AREA)
• Physics & Mathematics (AREA)
• Health & Medical Sciences (AREA)
• Toxicology (AREA)
• Physical Vapour Deposition (AREA)

Applications Claiming Priority (2)

Publications (1)

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• 2004
  • 2004-04-20 DE DE102004019169A patent/DE102004019169A1/de not_active Ceased
• 2005
  • 2005-02-23 JP JP2007508741A patent/JP4868534B2/ja not_active Expired - Fee Related
  • 2005-02-23 EP EP05707580A patent/EP1738395A1/de not_active Ceased
  • 2005-02-23 CN CNA2005800053031A patent/CN1922708A/zh active Pending
  • 2005-02-23 WO PCT/EP2005/001851 patent/WO2005109466A1/de not_active Application Discontinuation
  • 2005-02-23 KR KR1020067019342A patent/KR20060134994A/ko not_active Application Discontinuation

Non-Patent Citations (1)

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