EP1427265A2 - Vorrichtung und Verfahren zum Beschichten eines Substrates und Beschichtung auf einem Substrat - Google Patents
Vorrichtung und Verfahren zum Beschichten eines Substrates und Beschichtung auf einem Substrat Download PDFInfo
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- EP1427265A2 EP1427265A2 EP03022387A EP03022387A EP1427265A2 EP 1427265 A2 EP1427265 A2 EP 1427265A2 EP 03022387 A EP03022387 A EP 03022387A EP 03022387 A EP03022387 A EP 03022387A EP 1427265 A2 EP1427265 A2 EP 1427265A2
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- Prior art keywords
- hollow cathode
- layer
- plasma
- substrate
- plasma jet
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
Definitions
- the invention relates to an apparatus and a method for coating a substrate and a coating on a substrate according to the genus of the independent Expectations.
- low-friction wear protection layers are primarily metal-containing ones Carbon layers and amorphous, diamond-like carbon layers, so-called a-C: H layers, known. These are usually done over a period of several hours High vacuum process made.
- amorphous, diamond-like Carbon layers with plasma beam sources, for example one inductive coupled plasma beam source, which according to DE 101 04 614 A1 in a rough vacuum or in the near-atmospheric pressure range, so that the deposition takes just a few minutes.
- plasma beam sources for example one inductive coupled plasma beam source, which according to DE 101 04 614 A1 in a rough vacuum or in the near-atmospheric pressure range, so that the deposition takes just a few minutes.
- plasma beam source for surface processing of workpieces and in particular for applying coatings Substrates are also described in DE 198 56 307 C1.
- DE 196 35 669 C1 discloses that there is also a need to apply a layer to a substrate Gas flow sputtering with a hollow cathode glow discharge in an inert gas stream is suitable.
- the object of the present invention was to provide a device and a device Process with which a coating can be produced on a substrate, on the one hand has an upper functional layer, which can be used in particular as a wear protection layer , and which on the other hand has a second functional layer, the connection the coating with the substrate guaranteed.
- an upper functional layer which can be used in particular as a wear protection layer
- a second functional layer the connection the coating with the substrate guaranteed.
- one should be as possible good cohesion of these two functional layers can be guaranteed.
- the task was to create a nano-dispersive functional layer, i.e. a layer with a nano-scale Particles in a matrix, in a rough vacuum process on one, for example deposit metallic substrate, with the best possible connection and Adhesion of this functional layer to the substrate should be achieved.
- the device according to the invention and the method according to the invention have the Advantage that a material entry on the substrate via the hollow cathode and a material entry on the substrate via the plasma beam source at least temporarily at the same time can, while on the one hand the advantages of both sources are retained, and on the other hand new types of coatings can be created on the substrate, which can only be used one of these sources cannot be separated.
- there is an advantageous synergy of both methods with regard to the composition and properties of obtained coating on the substrate which mainly creates novel coatings can be produced efficiently and inexpensively with very good wear protection properties are.
- this combination of different sources leads to a material entry on the substrate at a reduced cost in handling the to be coated Substrates.
- Another major advantage is that the arrangement of the plasma beam source and the hollow cathode clearly within a common coating chamber shortened times to produce the desired coating on the substrate realized can be.
- the device according to the invention is suitable and thus performed procedures particularly well for series production.
- the desired coating can be due to the short coating time can be generated entirely in just one production line.
- the method according to the invention can also be used as a continuous process or so-called “In-line process", for example for coating bulk material as a substrate material be used.
- the method according to the invention is not necessary or the device according to the invention in a high vacuum or fine vacuum operate. Rather, it is also suitable for operation in a rough vacuum or in atmospheric pressure range. Due to the low demands on the vacuum Carrying out the method according to the invention is also advantageously possible technically relevant substrate material such as steel, stainless steel or workpieces from strongly outgassing or outgassing materials such as sintered materials, Plastics or elastomers, especially gear wheels, axles, sealing rings or profile material, to coat.
- substrate material such as steel, stainless steel or workpieces from strongly outgassing or outgassing materials such as sintered materials, Plastics or elastomers, especially gear wheels, axles, sealing rings or profile material, to coat.
- the hollow cathode used is a metallic hollow cathode with which a metallic adhesive layer can be deposited on the substrate.
- the metallic hollow cathode is also used as a metal source for production Nanoscale metal carbide, metal nitride and / or metal oxide particles are suitable.
- the deposition or generation is also insulating or semiconducting Materials possible with the help of the hollow cathode.
- a metallic adhesive layer and a nanodispersive layer for example nanoscale metal carbide particles in an amorphous, diamond-like carbon layer or matrix, in a rough vacuum inside to deposit only one coating chamber.
- an intermediate layer in the form of a gradient layer within a coating chamber that is, it can now be within a coating chamber between two functional layers an intermediate layer can be created, one in terms of composition ensures gradual transition between the functional layers.
- An intermediate layer is particularly advantageous with regard to its composition gradually from a metal layer as a second functional layer into a layer with nanoscale Metal carbide particles in an amorphous, diamond-like carbon matrix passes as the first functional layer.
- Such a gradient layer leads to one further improved adhesion of the second functional layer to the first functional layer and above on the substrate, as well as a particularly thermally and mechanically stable Layer structure.
- an inductively coupled plasma beam source which is acted upon by high frequency is used as the plasma beam source.
- a plasma beam source can be used particularly simply to generate the plasma beam and, furthermore, by adding reactive gases such as methane, C 2 H 2 or hydrogen, also to deposit a functional layer, for example an amorphous, diamond-like carbon layer.
- a microwave-excited plasma beam source or also a direct voltage or medium frequency discharge device through which a gas can flow is suitable as a plasma beam source, which is operated during operation with a direct voltage, preferably a pulsed direct voltage, a medium frequency voltage or a medium frequency high voltage, in order to generate a plasma.
- the hollow cathode as the source for preferably metallic nanoparticles, Atoms or clusters can be used.
- the hollow cathode is particularly advantageous from a material made of or with one of the metals selected from the group Vanadium, titanium, niobium, zirconium, tantalum, hafnium, chromium, molybdenum, tungsten, nickel, Copper, boron and / or silicon or their alloys with one another or with one other metal.
- a combination of these materials can be used accordingly segmented structure of the hollow cathode with areas of different Material is released or made available via the hollow cathode.
- the hollow cathode can advantageously, at least temporarily, also during the deposition the second functional layer, which is preferably used as a nanodispersive layer nanoscale particles are formed in a matrix, in addition to the plasma beam source, using the plasma beam source without this being more reactive during this time Additives or temporarily only by switching off the plasma beam source are used, during which time they are preferably said metals or metal alloys thus formed on the substrate.
- the hollow cathode and the plasma beam source are in relation to one another are arranged that one of the hollow cathode at least temporarily during operation generated glow discharge area and that generated by the plasma beam source during operation Plasma jet at least in regions before the action of the plasma jet overlap the substrate.
- it forms in the area of the overlap and subsequently in the plasma jet a reaction area in which the from the hollow cathode sputtered materials can react with materials led into the plasma jet, so that there are new materials under the prevailing plasma conditions how to form otherwise non-producible metal alloys and as a coating can be deposited on the substrate.
- Microwave plasma radiation source which also like the inductively coupled plasma radiation source in a rough vacuum, that is, preferably in the pressure range from 0.1 mbar to 100 mbar, or can be operated at a pressure of more than 50 mbar.
- the hollow cathode used is advantageously one with a gas or a plasma, for example with an inert gas or the plasma of the plasma beam source Hollow cathode, which is connected as a target, so that when a suitable electrical Voltage to the hollow cathode, for example a DC voltage, one high-frequency AC voltage, a medium-frequency AC voltage or a pulsed DC voltage, the material of the hollow cathode is released.
- a suitable electrical Voltage to the hollow cathode for example a DC voltage, one high-frequency AC voltage, a medium-frequency AC voltage or a pulsed DC voltage
- the hollow cathode inside the plasma beam be arranged or surround the plasma beam.
- the hollow cathode can also be used also be designed as an outlet nozzle of the plasma jet source, or in relation to the Direction of the gas flow in front of the plasma jet source, in particular in the gas flow in front the plasma beam source.
- the hollow cathode also advantageous to simultaneously use a reactive substance for the plasma jet, in particular in the form of a gas, a liquid such as a solution or a Suspension or in the form of powder particles or other precursor materials.
- the hollow cathode is preferably designed as a gas shower hollow cathode.
- the hollow cathode can also be located between the plasma jet source and the plasma jet and the substrate. In this way it is possible the hollow cathode only temporarily during the application of the substrate use the plasma jet, and temporarily add an additional material effect in the substrate.
- the plasma beam source and the hollow cathode can also be operated alternately, or the hollow cathode can be operated continuously are used and the plasma beam source is only switched on temporarily, all the more so in addition to the material input with the aid of the hollow cathode, also a material input or to effect processing of the substrate with the aid of the plasma beam source.
- hollow cathode in order to achieve an increased material input with the help of the hollow cathode often inexpensive to provide a plurality of hollow cathodes, at least for Part arranged in the plasma jet and / or concentrically around the plasma jet are, and / or to scale the hollow cathode in length and / or diameter accordingly.
- FIG. 1 shows the structure of a coating on the substrate
- FIG. 2 a schematic diagram of the possibilities of combining the plasma beam source with a Hollow cathode
- Figure 3 shows a first embodiment of a device with a Plasma beam source and a hollow cathode
- Figure 4 shows a second embodiment for Such a device
- Figure 5 shows a third embodiment of such Contraption.
- FIGS. 6 and 7 show alternative embodiments for a hollow cathode, which can be used in the exemplary embodiments according to FIGS. 3 to 5.
- FIG. 8 shows a further exemplary embodiment for a device with a plasma beam source and a hollow cathode, the hollow cathode serving as the outlet nozzle of the Plasma beam source is formed
- Figure 9 shows a fifth embodiment, wherein the hollow cathode is arranged in front of the plasma beam source
- FIG. 10 shows a sixth Embodiment
- Figure 11 shows a seventh embodiment with a coil Hollow cathode
- Figure 12 shows an eighth embodiment with a perpendicular to Plasma beam oriented hollow cathode.
- FIG. 1 shows a substrate 10 on which a coating 5 in the form of a layer system is applied.
- the coating 5 has a second functional layer 11, in particular an adhesive layer, which consists for example of a metal or silicon.
- the adhesive layer is preferably a titanium layer, a chrome layer or a tungsten layer.
- On the second functional layer 11 there is a gradient layer 12, and on the gradient layer 12 a first functional layer 13, which for example as Wear protection layer or hard material layer is used.
- the first functional layer is preferred 13 a matrix layer with nanoscale particles embedded therein, that is Particles with an average particle diameter of less than 100 nm, in particular less than 10 nm.
- the first functional layer 13 is particularly preferably a layer Made of amorphous, diamond-like carbon with embedded nanoscale metal oxide particles and / or metal carbide particles and / or metal nitride particles.
- the nanoscale particles can also contain metal oxynitride, metal oxycarbide, Metal nitrocarbide or metal oxinitrocarbide particles.
- the substrate 10 according to FIG. 1 is, for example, a noble beam substrate, a substrate made of Rolling steel, an elastomer or a sintered material.
- that is Substrate 10 for example, its piston, a cylinder, a shaft, a pin, a gear or a profile material.
- the thickness of the second functional layer 11 is preferably Range from 1 nm to 500 nm, in particular 5 nm to 100 nm, the thickness of the gradient layer preferably in the range from 5 nm to 500 nm, in particular 15 nm to 100 nm, and the thickness of the first functional layer 13 preferably in the range from 50 nm to 50 ⁇ m, in particular 500 nm to 10 ⁇ m.
- the second functional layer 11 primarily ensures the best possible adhesion of the first functional layer 13 to the substrate 10
- Gradient layer 12 conveys its gradually changing composition a gradual transition from the composition of the unilaterally adjacent second functional layer 11 to the mutually adjacent first functional layer 13, and thus also brings about an improved adhesion of the first functional layer 13 on the substrate 10. It should also be mentioned that both the first functional layer 13 and the second functional layer 11, if necessary, in particular from a large number differently composed sub-layers can be constructed.
- the first functional layer 13 is preferably a layer made of amorphous, diamond-like carbon, which is deposited by adding one or more reactive gases such as methane, C 2 H 2 or hydrogen to a plasma, in particular an inert gas plasma, into which the above-mentioned, in a plasma jet via reactive volume processes formed nanoscale metal carbide particles are embedded, so that a nanodispersive MeC / aC: H layer is formed.
- FIG. 2 explains the possibilities of a combination of a plasma beam source 20, for example an inductively coupled plasma beam source, a microwave plasma beam source or a direct current or medium frequency discharge device through which gas flows, which generates a plasma 21 with a hollow cathode 23.
- a plasma beam source 20 for example an inductively coupled plasma beam source, a microwave plasma beam source or a direct current or medium frequency discharge device through which gas flows, which generates a plasma 21 with a hollow cathode 23.
- the plasma beam source 20 can first be used via a PACVD route 22 (“plasma assisted chemical vapor deposition "), a first deposition material 27 is provided, which is subsequently deposited on the substrate 10.
- a PACVD route 22 plasma assisted chemical vapor deposition "
- a first deposition material 27 is provided, which is subsequently deposited on the substrate 10.
- the deposition process can involve the cooperation or the use of the hollow cathode 23 to be dispensed with.
- the entry of material onto the substrate 10 can also be carried out via a PVD route 24 take place ("physical vapor deposition").
- the hollow cathode 23, the a glow light area 33 or a hollow cathode discharge area 33 during operation forms, particles 25, for example metal particles, metal clusters or metal atoms, provided.
- These particles provided by the hollow cathode 23 via the PVD route 24 25 are then in a reaction volume 26 in the plasma 21, for example Inert gas plasma or a plasma which contains a reactive gas or a reactive substance, or the corresponding plasma beam 40 generated by the plasma beam source 20 is introduced, so that it is transported onwards and / or with reactive gas components present there, Particles or precursor materials can react.
- About the PVD route 24 can thus have a second deposition material 28 for entry onto the substrate 10 are provided.
- FIG. 2 explains that the particles provided by the hollow cathode 23 25, for example metal particles, metal atoms or metal clusters, also directly, that means without interaction with the plasma 21, provided as the third deposition material 29 and can be entered on the substrate 10.
- Figure 2 shows that three different routes and therefore three potentially different deposition materials 27, 28, 29 by combining the plasma beam source 20 or the plasma 21 generated by this with that of the hollow cathode 23 emitted material are available.
- These different ways can at least temporarily at the same time as producing a coating, in particular in accordance with FIG 1 are used, temporarily in succession in the course of producing the coating to be used, or in terms of their temporal use as well as in terms of of the path or paths just followed can be combined as desired become.
- FIG. 3 explains a first exemplary embodiment for a coating device 30, with which the substrate 10 can be coated with the coating 5, which is initially from a Plasma beam source 20 proceeds in the form of an inductively coupled plasma beam source.
- a plasma beam source 20 is known for example from DE 101 04 614 A1.
- the plasma jet 40 continues to hit in one defined distance from the plasma beam source 20, for example a distance of 5 cm to 50 cm, in the coating chamber on the substrate 10, where it is either a Processing the substrate 10 or depositing material on the substrate 10 causes.
- the plasma jet 40 is preferred for the deposition of material on the Substrate 10 used in the form of layers.
- FIG. 3 also shows how a hollow cathode 23 in the form of a hollow cylinder with a diameter of preferably 0.1 cm to 5 cm or more, in particular 0.25 cm to 0.6 cm, is introduced into the plasma jet 40 or the plasma 21.
- the Hollow cathode 23 is around the one generated by the inductively coupled plasma source 20 Plasma jet 40 arranged in the coating chamber.
- a suitable voltage for example a high frequency AC voltage, a DC voltage or a pulsed DC voltage
- a suitable voltage for example a high frequency AC voltage, a DC voltage or a pulsed DC voltage
- FIG. 3 further shows how between the plasma beam source 20 and the hollow cathode 23 a first gas supply 31 and one between the hollow cathode 23 and the substrate 10 second gas supply 32 is provided. Only one of these gas feeds 31 is preferred, 32 provided, particularly preferably the first gas supply 31.
- a reactive gas such as methane, hydrogen or C 2 H 2 can be introduced into the plasma 21 or the plasma jet 40, at least in the case that the first gas supply 31 according to 3 is used for this purpose, at least partially also reaches the glow light area 33.
- the hollow cathode 23 is a metallic hollow cathode, for example made of titanium, chrome or tungsten. It sets corresponding metal atoms during operation or metal clusters, which get into the plasma beam 40 and finally on the substrate 10 are entered.
- the plasma beam source 20 is an inductively coupled plasma beam source, with a high frequency via a preferably water-cooled copper coil coupled into a gas volume in the MHz range with an output in the kW range, and so a plasma state is excited there. Further are common, not in Figure 3 Means shown for generating a gas flow through the plasma beam source 20 are provided. For further details, see DE 101 04 614 A1 and the one described there Plasma beam source referenced.
- an argon gas flow of, for example, 20 to 60 slm (slm liters per minute at normal pressure) blown into the plasma beam source 20, see above that the plasma 21 emerges as a free plasma jet 40 from the plasma jet source and into the coating chamber, not shown, in which the substrate 10 is located.
- the reactive substances optionally supplied by means of the first and / or second gas supply 31, 32 such as reactive gases, precursor materials, powders or the like Suspensions or solutions with particles or precursor materials are preferred also with flows of up to a few slm in front of and / or behind the plasma beam source 20 fed to the plasma jet 40.
- the hollow cathode 23 can simultaneously also as an injector for supplying these reactive substances in the form of a hollow gas shower cathode be used and in this respect the first gas supply 31 and / or the second Replace or add gas supply 32.
- the hollow cathode 23 according to Figure 3 can optionally with high frequency, medium frequency or be operated with a constant or pulsed DC voltage, using as the working gas for example argon flows through the hollow cathode 23, which either from comes from the plasma beam source 20, ie the hollow cathode 23 is an open hollow cathode executed, or that is fed directly to the hollow cathode 23, that is, the hollow cathode In this case, 23 is designed as a hollow gas shower cathode.
- the applied electrical voltage causes electrons to be removed from the hollow cathode 23 emitted and accelerated in the cathode drop area. This leads to a pendulum movement of the electrodes within the hollow cathode 23, the electrodes using their energy in emit a plasma and thus generate a very high plasma density.
- the plasma beam source 20 known from DE 101 04 614 A1 can be used in particular good amorphous, diamond-like carbon layers with very high coating rates separate, especially a high frequency, inductively coupled Plasma beam source is advantageous due to its very high plasma density.
- a high frequency, inductively coupled Plasma beam source is advantageous due to its very high plasma density.
- the plasma beam 40 or plasma 21 generated with this plasma beam source 20 given a high reactivity, so that suitable substances are introduced into the plasma 21 the formation of nanoscale particles via reactive volume processes in the Plasma jet 40 and thus the deposition of a large number of novel composite layers with nanoscale particles embedded in a matrix is particularly simple and is effectively possible.
- metal carbide nanoparticles for example and / or a metal adhesive layer as second functional layer 11 required metal preferably comes from the metallic hollow cathode 23.
- the coating device 30 for example by separate injectors in the area of the plasma beam source 20, the first gas supply 31 and / or the second gas supply 32 before or supplied behind the hollow cathode 23, or even through the hollow cathode 23 itself.
- FIG. 4 explains an alternative embodiment to FIG. 3, which differs from this only differs in that the hollow cathode 23 has a smaller dimension, so that it is entirely within the plasma jet 40.
- the hollow cathode 23 for example as a hollow cylinder or in the form of two opposite, in particular curved plates is formed, a diameter in a range of 1 cm to 1 mm.
- the hollow cathode 23 continues here at the same time as an injector for supplying a reactive gas into the plasma 21 or Plasma jet 40 used.
- the supply of the reactive gas can also be via the first gas supply 31 and / or the second gas supply 32 take place.
- FIG. 5 explains a further exemplary embodiment alternative to FIG. 3 or 4, this time the hollow cathode 23 as a microscale hollow cathode 23 with an opening is less than 5 mm, in particular less than 1 mm.
- a plurality of hollow cathodes arranged side by side or bundled 23 provided, each as a hollow cylinder with a diameter of less than 1 mm are formed.
- FIG. 5 further shows that the first gas supply 31 with the hollow cathodes 23 is connected, so that via the first gas supply 31, the hollow cathode 23 Working gas, for example argon, and / or the plasma 21 via the hollow cathodes 23 or the plasma jet 40 also requires a reactive gas or another reactive substance is feedable.
- the hollow cathodes 23 act in the exemplary embodiment 5 also as a gas shower.
- FIG. 5 also shows that each of the Hollow cathode 23 has a hollow cathode discharge region 33, each of which is inside of the plasma jet 40.
- FIG. 6 shows a perspective view of an embodiment for a hollow cathode 23, as is the case, for example, in the exemplary embodiment according to FIG. 4 or FIG. 5 can be used.
- the hollow cathode 23 according to FIG. 6 has a metallic one Cylinders with a large number of parallel bores crossing these, one Diameters of preferably 100 ⁇ m to 3 mm, in particular 500 ⁇ m to 1.5 mm, exhibit.
- FIG. 7 shows an alternative embodiment for a hollow cathode 23 to FIG. 6, which are a plurality of metallic hollow cylinders arranged concentrically to one another has, which are connected to each other via webs and held together.
- FIG. 8 explains a further exemplary embodiment for a coating device 30, with which a substrate 10 can be coated with a coating 5, in particular according to FIG. 1 is, in addition the plasma beam source already indicated in FIGS. 3 to 5 20 is explained in more detail.
- the plasma beam source 20 in the area of the exit of the plasma 21 in the form of a plasma jet 40 from the plasma jet source 20 pot-shaped, with turns of a coil 36 the plasma 21 surrounded.
- the hollow cathode is different from FIGS. 3 to 5 in FIG 23 is now designed as an outlet nozzle 41 of the plasma jet source 20, which passes over the latter insulation 37 is electrically insulated.
- the hollow cathode 23 is cylindrical Exit nozzle 41 formed, which leads to a slight narrowing of the Plasma beam 40 leads in the exit region of the plasma beam source 20.
- the glow region 33 also lies in the exemplary embodiment according to FIG Hollow cathode 23 within the plasma jet 40, so that by material input into the Plasma 21 starting from a gas flow sputtering process in the hollow cathode 23 between the glow region 33 and the substrate 10 a modified plasma 34 in one Reaction volume 26 arises.
- the hollow cathode 23 according to FIG. 8 is preferably around the entire plasma beam 40 Area of the outlet opening of the plasma beam source 20 arranged and at the same time as Gas shower is formed or provided with an injection device, so that the Hollow cathode 23, if necessary, reactive gases or reactive substances introduced into the plasma 21 can be. Alternatively or in addition, these can also be directly in the interior of the cup-shaped plasma beam source 20 are introduced. Finally can also in the embodiment according to FIG. 8 in particular as a gas supply 31 trained injector, not shown injector can be provided, the reactive Gas or the reactive substance to the plasma jet 40 with respect to the direction of the gas flow feeds behind the outlet nozzle 41.
- FIG. 9 explains a further exemplary embodiment for a coating device 30, here the hollow cathode 23 in relation to the flow direction of the plasma beam source 20 introduced gas, for example argon, in front of the plasma beam source 20 is arranged.
- the glow region 33 overlaps Hollow cathode 23 with the plasma 21 ignited in the plasma beam source 20.
- FIG. 8 or 9 there was a representation apart from the gas supplies 31 and 32 according to FIG. 3, 4 or 5. these can however, can also be provided here without further ado.
- FIG. 10 explains a further exemplary embodiment for a coating device 30, the hollow cathode 23 now being located within the plasma beam source 20.
- the hollow cathode 23 serves at the same time as an injector, that is, through it the working gas of the inductively coupled plasma jet source 20, for example argon, and, depending on the application, also other reactive gases such as methane, C 2 H 2 , hydrogen or other reactive substances such as a suspension with microscale or nanoscale powder particles or a solution containing precursor materials in plasma beam source 20.
- these materials can alternatively or additionally also be fed directly behind the hollow cathode 23 of the plasma jet source 20 or outside the plasma jet source 20 to the plasma jet 40, for example by means of suitable injectors.
- FIG. 11 explains a further exemplary embodiment for a coating device 30, the hollow cathode 23, in contrast to FIG. 3, made of a coil wound wire, for example a metal wire.
- FIG. 12 finally shows an exemplary embodiment in which the hollow cathode 23 is vertical is oriented to the plasma jet 40.
- Reactive components or gases can through injectors, not shown, or the hollow cathode 23 itself into the plasma jet 40 be initiated.
- This variant offers the advantage that the plasma jet 40 itself through the hollow cathode 23 in particular with regard to the flow conditions or not little is disturbed, and that only the desired reactive components or gases supplied to the plasma jet 40 and with the gas flow of the plasma jet 40 to the coating substrate 10 are performed.
- Another variant is the execution of the hollow cathode 23 in a coaxial form around the Plasma jet 40 around, in which the cathode rings or ring segments with one Pressure-adjusted distance through which the working gases are led.
- the hollow cathode 23 additionally with a device for generation of a magnetic field, so that the electrodes in the magnetic field Hollow cathode 23 are forced onto a spiral path. This intensifies of the hollow cathode plasma or the glow region 33, so that a more effective Coating is effected.
- the hollow cathode 23 can also be made of a dielectric or a semiconductor or in the form of a segmented hollow cathode 23 with at least one segment of a dielectric or semiconductor, the electrical excitation of the hollow cathode discharge then being provided by electrodes which are attached to the outside of the dielectric or semiconductor and applied with high frequency voltage or pulsed DC voltage is guaranteed.
- atoms or clusters of an insulator or semiconductor such as Si 3 N 4 or alloys can also be released therewith or from them and deposited on the substrate 10 via a gas flow sputtering.
- a metallic adhesive layer 11 is deposited by a gas flow sputtering process, thereafter a gradient layer 12 is deposited by gradually increasing addition reactive plasma components in the area of the hollow cathode 23 and an optional connection the inductively coupled plasma beam source 20 or an optional addition of Reactive substances in the plasma jet 40, that is, with additional exposure to the Substrate 10 with the plasma jet 40, and finally the deposition of a nanodisperse Layer as the second functional layer 12, the hollow cathode 23 with the Plasma beam source 20 used together and no pure metal on the substrate 10 is deposited.
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Claims (23)
- Vorrichtung zur Beschichtung eines Substrates mit Mitteln zur Erzeugung eines Gasstromes und mindestens einer Plasmastrahlquelle, mit der ein zumindest zeitweilig auf das Substrat einwirkender Plasmastrahl erzeugbar ist, dadurch gekennzeichnet, dass neben der Plasmastrahlquelle (20) mindestens eine bei Betrieb zumindest zeitweilig einen Materialeintrag auf das Substrat (10) bewirkende Hohlkathode (23) vorgesehen ist.
- Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, dass die Hohlkathode (23) und die Plasmastrahlquelle (20) derart angeordnet sind, dass sich eine von der Hohlkathode (23) bei Betrieb zumindest zeitweilig erzeugter Hohlkathodenentladungsbereich (33) und der von der Plasmastrahlquelle (20) bei Betrieb erzeugte Plasmastrahl (40) zumindest bereichsweise vor dem Einwirken des Plasmastrahls (40) auf das Substrat (10) überlappen.
- Vorrichtung nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die Plasmastrahlquelle (20) eine induktiv gekoppelte Plasmastrahlquelle, eine Mikrowellenplasmastrahlquelle oder eine von einem Gas durchströmbare Gleichspannungs- oder Mittelfrequenzentladungseinrichtung ist.
- Vorrichtung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die Plasmastrahlquelle (20) und/oder die Hohlkathode (23) im Grobvakuum, insbesondere im Druckbereich von 0,1 mbar bis 100 mbar, oder bei einem Druck von mehr als 50 mbar betreibbar ist.
- Vorrichtung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass mindestens ein weiteres Mittel (31, 32) zur Zufuhr mindestens eines Reaktivstoffes zu dem Plasmastrahl (40), insbesondere zur Zufuhr eines Gases, einer Flüssigkeit wie einer Lösung oder einer Suspension, oder von Pulverpartikeln, vorgesehen ist.
- Vorrichtung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die Mittel zur Erzeugung des Gasstromes auch zur Zufuhr mindestens eines Reaktivstoffes zu dem Plasmastrahl (40), insbesondere zur Zufuhr eines Gases, einer Flüssigkeit wie einer Lösung oder einer Suspension, oder von Pulverpartikeln, einsetzbar sind.
- Vorrichtung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die Hohlkathode (23) eine bei Betrieb mit einem Gas und/oder einem Plasma (21) beaufschlagte, als Target dienende, insbesondere metallische Hohlkathode ist.
- Vorrichtung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass eine Einrichtung zur Beaufschlagung der Hohlkathode (23) mit Gleichspannung, gepulster Gleichspannung, mittelfrequenter Spannung oder Hochspannung vorgesehen ist.
- Vorrichtung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die Hohlkathode (23) zumindest bereichsweise innerhalb des Plasmastrahls (40) angeordnet ist, oder dass die Hohlkathode (23) den Plasmastrahl (40) zumindest bereichsweise umgibt.
- Vorrichtung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die Hohlkathode (23) derart ausgebildet ist, dass über sie mindestens ein Reaktivstoff dem Plasmastrahl (40), insbesondere in Form eines Gases, eines Plasmas, einer Flüssigkeit wie einer Lösung oder einer Suspension, oder in Form von Pulverpartikeln, zuführbar ist.
- Vorrichtung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die Hohlkathode (23) als Gasduschenhohlkathode ausgebildet ist.
- Vorrichtung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die Hohlkathode (23) als Austrittsdüse (41) der Plasmastrahlquelle (20) ausgebildet ist, oder dass die Hohlkathode (23) in Bezug auf die Richtung des Gasstromes vor der Plasmastrahlquelle (20), insbesondere in dem Gasstrom vor der Plasmastrahlquelle (20), angeordnet ist.
- Vorrichtung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die Hohlkathode (23) neben dem Plasmastrahl (40) vor dem Substrat (10) angeordnet ist.
- Vorrichtung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass eine Mehrzahl von Hohlkathoden (23) vorgesehen ist, die insbesondere zumindest zum Teil in dem Plasmastrahl (40) und/oder konzentrisch um den Plasmastrahl (40) angeordnet sind.
- Vorrichtung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass mit der Hohlkathode (23) über ein Gasflusssputtern Atome oder Cluster eines Elementes ausgewählt aus der Gruppe Cr, V, Ti, Nb, Zr, Ta, Hf, Mo, W, Ni, Cu, B, C, Si sowie Legierungen damit oder daraus auf dem Substrat (10) abscheidbar sind, oder dass mit der Hohlkathode über ein Gasflusssputtern Atome oder Cluster ausgewählt aus der Gruppe Cr, V, Ti, Nb, Zr, Ta, Hf, Mo, W, Ni, Cu, B, C, Si dem Plasmastrahl (40) zuführbar sind.
- Vorrichtung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass mit der Hohlkathode (23) über ein Gasflusssputtern Atome oder Cluster eines Isolators oder Halbleiters, insbesondere Si3N4, oder Legierungen damit oder daraus auf dem Substrat (10) abscheidbar sind, oder dass mit der Hohlkathode über ein Gasflusssputtem Atome oder Cluster dem Plasmastrahl (40) zuführbar sind.
- Verfahren zum Beschichten eines Substrates, insbesondere mit einer Vorrichtung nach einem der vorangehenden Ansprüche, wobei mit Hilfe mindestens einer Plasmastrahlquelle (20) zeitweilig mindestens eine erste Funktionsschicht (13) mit oder aus einer Schicht mit einer Matrix mit darin eingebetteten nanoskaligen Partikeln zumindest bereichsweise auf dem Substrat (10) abgeschieden wird, und wobei mit Hilfe mindestens einer Hohlkathode (23) über ein Gasflusssputtern zeitweilig mindestens eine zweite Funktionsschicht (11) zumindest bereichsweise auf dem Substrat (10) abgeschieden wird.
- Verfahren nach Anspruch 17, dadurch gekennzeichnet, dass als zweite Funktionsschicht (11) eine metallische Schicht oder eine Siliziumschicht abgeschieden wird.
- Verfahren nach Anspruch 17 oder 18, dadurch gekennzeichnet, dass auf dem Substrat (10) zunächst die zweite Funktionsschicht (11) abgeschieden wird, und dass im Weiteren die erste Funktionsschicht (13) abgeschieden wird.
- Verfahren nach einem der Ansprüche 17 bis 19, dadurch gekennzeichnet, dass zwischen der ersten Funktionsschicht (13) und der zweiten Funktionsschicht (11) zumindest bereichsweise eine Zwischenschicht (12), insbesondere in Form einer einen hinsichtlich der Zusammensetzung allmählichen Übergang zwischen den Funktionsschichten (11, 13) vermittelnden Gradientenschicht, abgeschieden wird.
- Verfahren nach einem der Ansprüche 17 bis 20, dadurch gekennzeichnet, dass auf dem Substrat (10) als zweite Funktionsschicht zumindest bereichsweise eine haftvermittelnde Schicht abgeschieden wird, dass darauf zumindest bereichsweise die Zwischenschicht (12) abgeschieden wird, und dass darauf zumindest bereichsweise die erste Funktionsschicht (13) abgeschieden wird, wobei die Zwischenschicht in Form einer hinsichtlich der Zusammensetzung einen allmählichen Übergang zwischen benachbarten Funktionsschichten (11, 13) vermittelnden Gradientenschicht abgeschieden wird.
- Verfahren nach einem der Ansprüche 17 bis 21, dadurch gekennzeichnet, dass als erste Funktionsschicht (13) eine Schicht mit oder aus amorphem, insbesondere diamantähnlichem Kohlenstoff abgeschieden wird, in die nanoskalige Metalloxidpartikel und/oder Metallcarbidpartikel und/oder Metallnitridpartikel eingebettet sind, oder dass die erste Funktionsschicht (13) zumindest eine derartige Schicht als Teilschicht aufweist.
- Beschichtung auf einem Substrat, insbesondere herstellbar nach einem Verfahren nach einem der Ansprüche 17 bis 22, wobei auf dem Substrat (10) zumindest bereichsweise mindestens eine zweite Funktionsschicht (11), insbesondere eine haftvermittelnde Schicht, auf der zweiten Funktionsschicht (11) zumindest bereichsweise mindestens eine Zwischenschicht (12) und auf der Zwischenschicht (12) zumindest bereichsweise mindestens eine erste Funktionsschicht (13) vorgesehen ist, wobei mindestens eine der Zwischenschichten (12) als einen hinsichtlich der Zusammensetzung allmählichen Übergang zwischen einer benachbarten zweiten Funktionsschicht (11) und einer benachbarten ersten Funktionsschicht (13) vermittelnde Gradientenschicht ausgebildet ist, und wobei mindestens eine der Funktionsschichten (11, 13) eine Matrixschicht mit darin eingebetteten nanoskaligen Partikeln, insbesondere eine Matrixschicht aus oder mit amorphem, diamantähnlichem Kohlenstoff mit darin eingebetteten nanoskaligen Metalloxidpartikeln und/oder Metallcarbidpartikeln und/oder Metallnitridpartikeln, aufweist.
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DE2002156257 DE10256257A1 (de) | 2002-12-03 | 2002-12-03 | Vorrichtung und Verfahren zum Beschichten eines Substrates und Beschichtung auf einem Substrat |
DE10256257 | 2002-12-03 |
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DE102006024433B4 (de) | 2006-05-24 | 2021-09-09 | JOH. WINKLHOFER & SÖHNE GMBH & Co. KG | Verschleißfeste Kette mit Verschleißschutzbeschichtung in nanokristalliner Struktur |
DE102008033938B4 (de) * | 2008-07-18 | 2012-04-19 | Innovent E.V. | Verfahren zur Abscheidung von Schichten auf einem Substrat |
DE102009010497A1 (de) * | 2008-12-19 | 2010-08-05 | J-Fiber Gmbh | Mehrdüsiger rohrförmiger Plasma-Abscheidebrenner zur Herstellung von Vorformen als Halbzeuge für optische Fasern |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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DE19635669C1 (de) | 1996-09-03 | 1997-07-24 | Fraunhofer Ges Forschung | Verfahren und Vorrichtung zur Beschichtung von Substraten mittels Gasflußsputtern |
WO2001040542A1 (de) | 1999-12-04 | 2001-06-07 | Robert Bosch Gmbh | Verfahren zur herstellung von kompositschichten mit einer plasmastrahlquelle |
DE10104611A1 (de) | 2001-02-02 | 2002-08-14 | Bosch Gmbh Robert | Vorrichtung zur keramikartigen Beschichtung eines Substrates |
WO2003018862A2 (de) | 2001-08-25 | 2003-03-06 | Robert Bosch Gmbh | Verfahren zur erzeugung einer nanostrukturierten funktionsbeschichtung und damit herstellbare beschichtung |
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JP3034076B2 (ja) * | 1991-04-18 | 2000-04-17 | 日本真空技術株式会社 | 金属イオン源 |
US5928771A (en) * | 1995-05-12 | 1999-07-27 | Diamond Black Technologies, Inc. | Disordered coating with cubic boron nitride dispersed therein |
GB9821903D0 (en) * | 1998-10-09 | 1998-12-02 | Rolls Royce Plc | A method of applying a coating to a metallic article and an apparatus for applying a coating to a metallic article |
DE10104614A1 (de) * | 2001-02-02 | 2002-08-22 | Bosch Gmbh Robert | Plasmaanlage und Verfahren zur Erzeugung einer Funktionsbeschichtung |
-
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19635669C1 (de) | 1996-09-03 | 1997-07-24 | Fraunhofer Ges Forschung | Verfahren und Vorrichtung zur Beschichtung von Substraten mittels Gasflußsputtern |
WO2001040542A1 (de) | 1999-12-04 | 2001-06-07 | Robert Bosch Gmbh | Verfahren zur herstellung von kompositschichten mit einer plasmastrahlquelle |
DE10104611A1 (de) | 2001-02-02 | 2002-08-14 | Bosch Gmbh Robert | Vorrichtung zur keramikartigen Beschichtung eines Substrates |
WO2003018862A2 (de) | 2001-08-25 | 2003-03-06 | Robert Bosch Gmbh | Verfahren zur erzeugung einer nanostrukturierten funktionsbeschichtung und damit herstellbare beschichtung |
Non-Patent Citations (1)
Title |
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J. MUSIL, SURFACE AND COATINGS TECHNOLOGY, vol. 125, 2000, pages 322 |
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