EP1397526A2 - Modifizierter dlc-schichtaufbau - Google Patents
Modifizierter dlc-schichtaufbauInfo
- Publication number
- EP1397526A2 EP1397526A2 EP02747332A EP02747332A EP1397526A2 EP 1397526 A2 EP1397526 A2 EP 1397526A2 EP 02747332 A EP02747332 A EP 02747332A EP 02747332 A EP02747332 A EP 02747332A EP 1397526 A2 EP1397526 A2 EP 1397526A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- hard material
- wearing part
- base material
- material layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
Definitions
- the invention relates to a wear part, the base material of which is protected by means of a very thin wear layer, which contains cross-linked amorphous (sp 2 -binding part) and / or crystalline (sp 3 -binding part) carbon.
- a wear layer which contains cross-linked amorphous (sp 2 -binding part) and / or crystalline (sp 3 -binding part) carbon.
- the invention also relates to the method for coating the base material with such a hard material layer.
- CVD chemical Vapor Deposition
- PVD Physical Vapor Deposition
- Ions are made from a gas by energetic excitation, e.g. B. generated by means of high frequency or by means of DC voltage or pulsed voltage, which then cut off on the, lying on cathode potential, substrate.
- energetic excitation e.g. B. generated by means of high frequency or by means of DC voltage or pulsed voltage, which then cut off on the, lying on cathode potential, substrate.
- PE-CVD plasma-enhanced CVD
- Ions are released from a target (solid, usually a plate, e.g. made of metal or non-metal) by means of physical influence, e.g. B. Bombardment by other ions that have been generated, for example, from a noble gas, preferably a heavy noble gas.
- a target solid, usually a plate, e.g. made of metal or non-metal
- B. Bombardment by other ions that have been generated for example, from a noble gas, preferably a heavy noble gas.
- PVD physical processes
- Conventional sputtering methods include DC sputtering, triode sputtering and ion plating
- HF sputtering The ionization of the sputtering gas is effected by applying a high-frequency voltage of a few kHz to MHz, with Me-a-C: H layers in particular pulsed in the 85-250 kHz range.
- the high-frequency coil can be arranged inside or outside the discharge chamber. In the latter case, the ions inside the chamber are additionally accelerated by an electric field.
- the layers to be applied to the base material can consist of conductive or non-conductive material. It is also known to merely heat the substrates in a preliminary stage and to etch them by ion bombardment, ie to remove oxide layers, the bombardment being carried out by ions of an inert, heavy sputtering gas, usually an inert gas.
- the substrate to be coated is isolated from ground and given a small negative bias of 50 to 500 V compared to the plasma.
- the growing layer is constantly bombarded with sputter gas atoms, and the growing layer is thus cleaned of adsorbed gas particles.
- Reactive sputtering At least one component of the layer to be applied to the substrate does not come from the target but from the gas phase. A reactive gas is therefore introduced into the reaction chamber, which reacts chemically with the target material or the atoms knocked out of it and then deposits as a chemical product on the substrate.
- the reaction can still take place on the target, then the reaction product is sputtered off, or only on the substrate itself when it is deposited. If the pressure in the chamber is high enough, the chemical reaction can also take place in the plasma.
- connections can be deposited as a layer structure, for example by metal targets are used and the remaining components are specified in the gas phase.
- metal targets are used and the remaining components are specified in the gas phase.
- metal carbides, nitrides and oxides are deposited in this way.
- a magnetic field is superimposed on the electric field that is generated during cathode sputtering, for example by arranging permanent magnets behind a cathode plate.
- the charge carriers in the plasma no longer move essentially parallel to the electrical field lines, but rather transversely or in the form of a garland or helically or helically.
- the DC discharge voltage is reduced to 200 to 600 V and the target load capacity can be increased from, for example, 5 to 10 W / cm 2 in the case of diode sputtering to 25 W / cm 2 .
- one or even two intermediate layers as a mediator layer between the base material and the hard material layer have been necessary for a good durability of the hard material layer, the base material in particular having to be completely coated, since remaining free areas were susceptible to corrosion, and thus also the covering layer, for example the intermediate layer, must not be susceptible to corrosion.
- such a steel is used as the base material, which does not drop tempering after hardening at a tempering temperature of 500 ° Celsius below a hardness of 54 HRC, in particular not below a hardness of 50 HRC.
- the coating of the base material that is to say either directly the hard material layer or a mediator layer arranged, in particular only, between the base material and hard material layer, is located directly on the bare metal, non-oxidized surface of the base material.
- a mediator layer is present, this is preferably only a single layer which contains in particular silicon and / or a carbide former (Ti, Cr, W, Zr, Hf, V, Nb, Ta, Mo), in particular of 30% by weight % to 100% by weight, in particular the majority, in particular in the case of a metal carbide in the areas close to the substrate.
- This intermediate layer is then likewise applied by means of CVD or PVD, in any case by means of deposition from the gas or plasma phase or by sputtering, and not galvanically by means of chemical or electrolytic deposition, that is to say by means of wet plating.
- the mediator layer contains either silicon, in particular silicon carbide, or a pure metal, in particular a metal carbide.
- the hard material layer itself consists of at least 30 percent by weight, in particular mostly of carbon or a mixture of non-metal components (Si, F, O, N, Br, Cl) and carbon. It can also contain metal ions (Ti, Cr, Zr, Hf, V, Nb, Ta, Mo), in particular in an amount of 5 to 40% by weight, in particular 10 to 30% by weight, in particular 15 up to 25% by weight of the total weight of the hard material layer.
- the hard material layer has a thickness of 1 to 10 ⁇ m, in particular 2 to 4 ⁇ m, while a mediator layer - if present - has a maximum thickness of 1 ⁇ m, in particular a maximum of 200 nm, and is ideally as thin as possible.
- the outside of the finished coated wear part should have a light color, at least over a part of the surface, in particular a metallic sheen.
- the material layer can also contain non-metal ions instead of metal ions.
- a silicon content in particular from 10% by weight to 30% by weight, in particular in the form of silicon carbide or silicon oxide, increases the temperature resistance.
- the cover layer is formed as a separate layer on the hard material layer, but to change the doping in the course of the structure of the hard material layer in the direction of those ions which give the desired color effect, that is to say also brightening.
- HF cathode sputtering by magnetron sputtering is shortlisted, with the aid of which metals which have the desired light color and even the metallic sheen can be applied simply and inexpensively.
- Such an outer cover layer can in particular also, for. B. galvanically, by wet pasting, applied and in particular consist of nickel.
- the mediator layer and the hard material layer are not necessarily to be regarded as a precisely delimited layer, but by changing the process parameters when the layer is deposited on the substrate, in particular the type and composition of the gas filling in the reaction chamber, a gradual, smooth transition between the mediator layer can occur and hard material layer, and can also be achieved between hard material layer and cover layer. That is why the top layer is classified as a separate layer or to be regarded as equivalent as a gradual transition within the hard material layer.
- the main focus of the procedure for applying the coating is to be able to carry out the application of different layers as far as possible with the same system, in particular in one and the same reaction chamber, in the sense of an inexpensive application.
- the cleaning of the surface of the base material to a metallic bright state, in particular of any oxide layer or other contaminants, should also be carried out with the same system and in particular in the same reaction chamber in order to run the process quickly and inexpensively to let.
- the next step is preferably to proceed directly to the layer structure, for example by changing the gas in the reaction chamber, which in particular takes place again in a flowing transition.
- a mediator layer is not applied directly, but rather a mediator layer, it is possible to switch between a CVD process and a PVD process, even several times, when applying the mediator layer and hard material layer. The same applies to the change from the hard material layer to the outer cover layer.
- the entire process that is to say from the cleaning of the surface of the base material to the application of the cover layer including, is preferably carried out in one and the same reaction chamber in an uninterrupted process with fluid change of the process gases and fluid change of the other process parameters, continuously with the exclusion of air , especially under exclusion of oxygen, is working and / or under negative pressure.
- Fig. 1 a layer structure
- Fig. 2 a process apparatus.
- Fig. 1 shows a fully coated wear part in cross-sectional view greatly enlarged.
- a mediator layer 52 with a thickness of 500 nm is applied to the outer surface of the base material 1, and a hard material layer of 3.5 ⁇ m is applied to this. In the outer area of this hard material layer, this is formed to cover layer ⁇ 4 with a thickness of again 500 nm.
- the mediator layer 52 is made of silicon carbide ().
- the hard material layer 53 - with the exception of the cover layer (°) 54 - consists of highly cross-linked amorphous carbon (°), hydrogen and silicon in a weight ratio of 70% to 20% to 10%.
- the silicon and / or the hydrogen and / or the carbon is replaced by metal ions (X).
- Fig. 2 shows a coating system in section in a schematic diagram.
- the so-called plasma chamber 1 a plate-shaped, electrically insulated substrate holder 12, which is movable in the direction of the main plane 23, is arranged on the main plane 23, which is simultaneously the longitudinal center plane of the plasma chamber 1 and the plane of symmetry with respect to the magnetron cathodes described later.
- the plasma chamber 1 has a suction nozzle 21, to which a vacuum pump 11 is connected, which can evacuate the plasma chamber 1 and also has a gas inlet which can be shut off by means of a valve 13. Outside the valve 13, the gas inlet branches into several, in particular three, arms, which can each be closed by an inlet valve 14, 15, 16 and through which different gases can be introduced into the plasma chamber 1.
- valves 14-16 of the individual branches in particular also the valve 13, the desired composition and quantity of gases can be set.
- the wear parts (not shown in the figure) for coating are fastened on the substrate holder 12, preferably on both sides.
- the electrically insulated substrate holder 12 is wired to a controllable via a matchbox 17
- High-frequency generator 18 connected. By the high frequency generator 18 it is possible to also deposit electrically non-conductive layers and to coat electrically non-conductive substrates.
- Matchbox 17 is used to optimally couple the power emitted by the HF generator into the plasma.
- a preferably flat magnetron cathode 7, 22 is positioned near the outer walls of the plasma chamber 1 as a so-called double cathode arrangement, opposite which the substrate holder 12 and, above all, the substrates, not shown, attached thereon are arranged.
- the magnetron cathodes 7, 22 are constructed identically as follows:
- the cooling system 6 serves to dissipate the heat generated in the target 8 during sputtering, and consists of a non-magnetizable material, for example in the form of a hollow profile, through which a cooling liquid preferably flows.
- a magnet arrangement is arranged, consisting of individual permanent magnets 2, 3, 4, the polar direction of which (from the north to the south pole) within these magnets 2, 3, 4 extends transversely to the plane of the target 8.
- the magnets 2, 3, 4, which are spaced apart in the direction of the main plane 23, have mutually opposite pole arrangements, so that an electrical flow from the ends of the magnets 2, 3, 4 facing the substrate holder to the adjacent magnet in the form of a semicircle or one Half ellipse results.
- the magnets 2, 3, 4, however, are by a composite plate placed on the back of the magnets, which as Flußleit Solutions 5 serves, connected so that the magnetic flux takes place on the back of the magnets via the composite plate 5.
- the target 8 is connected to a high-frequency generator 10 via a matchbox 9, which fulfills the same purpose as the matchbox 17 in the substrate holder 12, or also to a pulse generator or a DC voltage source.
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2001126118 DE10126118A1 (de) | 2001-05-29 | 2001-05-29 | Modifizierter DLC-Schichtaufbau |
DE10126118 | 2001-05-29 | ||
PCT/EP2002/005931 WO2002097157A2 (de) | 2001-05-29 | 2002-05-29 | Modifizierter dlc-schichtaufbau |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1397526A2 true EP1397526A2 (de) | 2004-03-17 |
Family
ID=7686506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02747332A Withdrawn EP1397526A2 (de) | 2001-05-29 | 2002-05-29 | Modifizierter dlc-schichtaufbau |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1397526A2 (de) |
DE (1) | DE10126118A1 (de) |
WO (1) | WO2002097157A2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1980645A1 (de) | 2007-04-13 | 2008-10-15 | Ralf Stein | Verfahren zum Aufbringen einer mehrlagigen Beschichtung auf Werkstücke und/oder Werkstoffe |
DE102007047629A1 (de) | 2007-04-13 | 2008-10-16 | Stein, Ralf | Verfahren zum Aufbringen einer hochfesten Beschichtung auf Werkstücke und/oder Werkstoffe |
DE102013203464A1 (de) | 2013-02-28 | 2013-06-20 | E.G.O. Elektro-Gerätebau GmbH | Verfahren zur Herstellung einer Heizeinrichtung und Heizeinrichtung |
EP3243946B1 (de) * | 2016-05-12 | 2018-12-19 | Groz-Beckert KG | Textilwerkzeug, verwenden des textilwerkzeugs und verfahren zu dessen herstellung |
PT3483319T (pt) | 2017-11-09 | 2022-02-14 | Groz Beckert Kg | Ferramenta têxtil com película indicadora |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3047888A1 (de) * | 1980-12-19 | 1982-07-15 | Philips Patentverwaltung Gmbh, 2000 Hamburg | "schneidwerkzeug, verfahren zu seiner herstellung und seine verwendung" |
US4530750A (en) * | 1981-03-20 | 1985-07-23 | A. S. Laboratories, Inc. | Apparatus for coating optical fibers |
US5238741A (en) * | 1989-10-19 | 1993-08-24 | United Kingdom Atomic Energy Authority | Silicon carbide filaments bearing a carbon layer and a titanium carbide or titanium boride layer |
JP2804163B2 (ja) * | 1990-08-27 | 1998-09-24 | 協和電線株式会社 | 光ファイバ素材の製造方法 |
US5249554A (en) * | 1993-01-08 | 1993-10-05 | Ford Motor Company | Powertrain component with adherent film having a graded composition |
DE69420925T2 (de) * | 1993-10-28 | 2000-05-18 | Matsushita Electric Industrial Co., Ltd. | Herstellungsverfahren für diamantähnlichen Kohlenstoffilm und Bandantriebsgerät |
US5482602A (en) * | 1993-11-04 | 1996-01-09 | United Technologies Corporation | Broad-beam ion deposition coating methods for depositing diamond-like-carbon coatings on dynamic surfaces |
JPH1045327A (ja) * | 1996-07-31 | 1998-02-17 | Kyocera Corp | 耐摩耗性ガイド材及びこれを用いたスレッドガイド |
DE19749459A1 (de) * | 1997-11-10 | 1999-05-20 | Schmidt Betonwerk Gmbh C | Läufer für Ringspinn- oder Ringzwirnmaschinen |
-
2001
- 2001-05-29 DE DE2001126118 patent/DE10126118A1/de not_active Withdrawn
-
2002
- 2002-05-29 WO PCT/EP2002/005931 patent/WO2002097157A2/de not_active Application Discontinuation
- 2002-05-29 EP EP02747332A patent/EP1397526A2/de not_active Withdrawn
Non-Patent Citations (1)
Title |
---|
See references of WO02097157A3 * |
Also Published As
Publication number | Publication date |
---|---|
WO2002097157A2 (de) | 2002-12-05 |
WO2002097157A3 (de) | 2003-10-23 |
DE10126118A1 (de) | 2002-12-12 |
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