EP1397526A2 - Structure modifiee de couche de carbone sous forme de diamant amorphe (cda) - Google Patents

Structure modifiee de couche de carbone sous forme de diamant amorphe (cda)

Info

Publication number
EP1397526A2
EP1397526A2 EP02747332A EP02747332A EP1397526A2 EP 1397526 A2 EP1397526 A2 EP 1397526A2 EP 02747332 A EP02747332 A EP 02747332A EP 02747332 A EP02747332 A EP 02747332A EP 1397526 A2 EP1397526 A2 EP 1397526A2
Authority
EP
European Patent Office
Prior art keywords
layer
hard material
wearing part
base material
material layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02747332A
Other languages
German (de)
English (en)
Inventor
Reinhard HÖFER
Günther DURST
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saxonia Textile Parts GmbH
Original Assignee
Saxonia Umformtechnik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saxonia Umformtechnik GmbH filed Critical Saxonia Umformtechnik GmbH
Publication of EP1397526A2 publication Critical patent/EP1397526A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

Definitions

  • the invention relates to a wear part, the base material of which is protected by means of a very thin wear layer, which contains cross-linked amorphous (sp 2 -binding part) and / or crystalline (sp 3 -binding part) carbon.
  • a wear layer which contains cross-linked amorphous (sp 2 -binding part) and / or crystalline (sp 3 -binding part) carbon.
  • the invention also relates to the method for coating the base material with such a hard material layer.
  • CVD chemical Vapor Deposition
  • PVD Physical Vapor Deposition
  • Ions are made from a gas by energetic excitation, e.g. B. generated by means of high frequency or by means of DC voltage or pulsed voltage, which then cut off on the, lying on cathode potential, substrate.
  • energetic excitation e.g. B. generated by means of high frequency or by means of DC voltage or pulsed voltage, which then cut off on the, lying on cathode potential, substrate.
  • PE-CVD plasma-enhanced CVD
  • Ions are released from a target (solid, usually a plate, e.g. made of metal or non-metal) by means of physical influence, e.g. B. Bombardment by other ions that have been generated, for example, from a noble gas, preferably a heavy noble gas.
  • a target solid, usually a plate, e.g. made of metal or non-metal
  • B. Bombardment by other ions that have been generated for example, from a noble gas, preferably a heavy noble gas.
  • PVD physical processes
  • Conventional sputtering methods include DC sputtering, triode sputtering and ion plating
  • HF sputtering The ionization of the sputtering gas is effected by applying a high-frequency voltage of a few kHz to MHz, with Me-a-C: H layers in particular pulsed in the 85-250 kHz range.
  • the high-frequency coil can be arranged inside or outside the discharge chamber. In the latter case, the ions inside the chamber are additionally accelerated by an electric field.
  • the layers to be applied to the base material can consist of conductive or non-conductive material. It is also known to merely heat the substrates in a preliminary stage and to etch them by ion bombardment, ie to remove oxide layers, the bombardment being carried out by ions of an inert, heavy sputtering gas, usually an inert gas.
  • the substrate to be coated is isolated from ground and given a small negative bias of 50 to 500 V compared to the plasma.
  • the growing layer is constantly bombarded with sputter gas atoms, and the growing layer is thus cleaned of adsorbed gas particles.
  • Reactive sputtering At least one component of the layer to be applied to the substrate does not come from the target but from the gas phase. A reactive gas is therefore introduced into the reaction chamber, which reacts chemically with the target material or the atoms knocked out of it and then deposits as a chemical product on the substrate.
  • the reaction can still take place on the target, then the reaction product is sputtered off, or only on the substrate itself when it is deposited. If the pressure in the chamber is high enough, the chemical reaction can also take place in the plasma.
  • connections can be deposited as a layer structure, for example by metal targets are used and the remaining components are specified in the gas phase.
  • metal targets are used and the remaining components are specified in the gas phase.
  • metal carbides, nitrides and oxides are deposited in this way.
  • a magnetic field is superimposed on the electric field that is generated during cathode sputtering, for example by arranging permanent magnets behind a cathode plate.
  • the charge carriers in the plasma no longer move essentially parallel to the electrical field lines, but rather transversely or in the form of a garland or helically or helically.
  • the DC discharge voltage is reduced to 200 to 600 V and the target load capacity can be increased from, for example, 5 to 10 W / cm 2 in the case of diode sputtering to 25 W / cm 2 .
  • one or even two intermediate layers as a mediator layer between the base material and the hard material layer have been necessary for a good durability of the hard material layer, the base material in particular having to be completely coated, since remaining free areas were susceptible to corrosion, and thus also the covering layer, for example the intermediate layer, must not be susceptible to corrosion.
  • such a steel is used as the base material, which does not drop tempering after hardening at a tempering temperature of 500 ° Celsius below a hardness of 54 HRC, in particular not below a hardness of 50 HRC.
  • the coating of the base material that is to say either directly the hard material layer or a mediator layer arranged, in particular only, between the base material and hard material layer, is located directly on the bare metal, non-oxidized surface of the base material.
  • a mediator layer is present, this is preferably only a single layer which contains in particular silicon and / or a carbide former (Ti, Cr, W, Zr, Hf, V, Nb, Ta, Mo), in particular of 30% by weight % to 100% by weight, in particular the majority, in particular in the case of a metal carbide in the areas close to the substrate.
  • This intermediate layer is then likewise applied by means of CVD or PVD, in any case by means of deposition from the gas or plasma phase or by sputtering, and not galvanically by means of chemical or electrolytic deposition, that is to say by means of wet plating.
  • the mediator layer contains either silicon, in particular silicon carbide, or a pure metal, in particular a metal carbide.
  • the hard material layer itself consists of at least 30 percent by weight, in particular mostly of carbon or a mixture of non-metal components (Si, F, O, N, Br, Cl) and carbon. It can also contain metal ions (Ti, Cr, Zr, Hf, V, Nb, Ta, Mo), in particular in an amount of 5 to 40% by weight, in particular 10 to 30% by weight, in particular 15 up to 25% by weight of the total weight of the hard material layer.
  • the hard material layer has a thickness of 1 to 10 ⁇ m, in particular 2 to 4 ⁇ m, while a mediator layer - if present - has a maximum thickness of 1 ⁇ m, in particular a maximum of 200 nm, and is ideally as thin as possible.
  • the outside of the finished coated wear part should have a light color, at least over a part of the surface, in particular a metallic sheen.
  • the material layer can also contain non-metal ions instead of metal ions.
  • a silicon content in particular from 10% by weight to 30% by weight, in particular in the form of silicon carbide or silicon oxide, increases the temperature resistance.
  • the cover layer is formed as a separate layer on the hard material layer, but to change the doping in the course of the structure of the hard material layer in the direction of those ions which give the desired color effect, that is to say also brightening.
  • HF cathode sputtering by magnetron sputtering is shortlisted, with the aid of which metals which have the desired light color and even the metallic sheen can be applied simply and inexpensively.
  • Such an outer cover layer can in particular also, for. B. galvanically, by wet pasting, applied and in particular consist of nickel.
  • the mediator layer and the hard material layer are not necessarily to be regarded as a precisely delimited layer, but by changing the process parameters when the layer is deposited on the substrate, in particular the type and composition of the gas filling in the reaction chamber, a gradual, smooth transition between the mediator layer can occur and hard material layer, and can also be achieved between hard material layer and cover layer. That is why the top layer is classified as a separate layer or to be regarded as equivalent as a gradual transition within the hard material layer.
  • the main focus of the procedure for applying the coating is to be able to carry out the application of different layers as far as possible with the same system, in particular in one and the same reaction chamber, in the sense of an inexpensive application.
  • the cleaning of the surface of the base material to a metallic bright state, in particular of any oxide layer or other contaminants, should also be carried out with the same system and in particular in the same reaction chamber in order to run the process quickly and inexpensively to let.
  • the next step is preferably to proceed directly to the layer structure, for example by changing the gas in the reaction chamber, which in particular takes place again in a flowing transition.
  • a mediator layer is not applied directly, but rather a mediator layer, it is possible to switch between a CVD process and a PVD process, even several times, when applying the mediator layer and hard material layer. The same applies to the change from the hard material layer to the outer cover layer.
  • the entire process that is to say from the cleaning of the surface of the base material to the application of the cover layer including, is preferably carried out in one and the same reaction chamber in an uninterrupted process with fluid change of the process gases and fluid change of the other process parameters, continuously with the exclusion of air , especially under exclusion of oxygen, is working and / or under negative pressure.
  • Fig. 1 a layer structure
  • Fig. 2 a process apparatus.
  • Fig. 1 shows a fully coated wear part in cross-sectional view greatly enlarged.
  • a mediator layer 52 with a thickness of 500 nm is applied to the outer surface of the base material 1, and a hard material layer of 3.5 ⁇ m is applied to this. In the outer area of this hard material layer, this is formed to cover layer ⁇ 4 with a thickness of again 500 nm.
  • the mediator layer 52 is made of silicon carbide ().
  • the hard material layer 53 - with the exception of the cover layer (°) 54 - consists of highly cross-linked amorphous carbon (°), hydrogen and silicon in a weight ratio of 70% to 20% to 10%.
  • the silicon and / or the hydrogen and / or the carbon is replaced by metal ions (X).
  • Fig. 2 shows a coating system in section in a schematic diagram.
  • the so-called plasma chamber 1 a plate-shaped, electrically insulated substrate holder 12, which is movable in the direction of the main plane 23, is arranged on the main plane 23, which is simultaneously the longitudinal center plane of the plasma chamber 1 and the plane of symmetry with respect to the magnetron cathodes described later.
  • the plasma chamber 1 has a suction nozzle 21, to which a vacuum pump 11 is connected, which can evacuate the plasma chamber 1 and also has a gas inlet which can be shut off by means of a valve 13. Outside the valve 13, the gas inlet branches into several, in particular three, arms, which can each be closed by an inlet valve 14, 15, 16 and through which different gases can be introduced into the plasma chamber 1.
  • valves 14-16 of the individual branches in particular also the valve 13, the desired composition and quantity of gases can be set.
  • the wear parts (not shown in the figure) for coating are fastened on the substrate holder 12, preferably on both sides.
  • the electrically insulated substrate holder 12 is wired to a controllable via a matchbox 17
  • High-frequency generator 18 connected. By the high frequency generator 18 it is possible to also deposit electrically non-conductive layers and to coat electrically non-conductive substrates.
  • Matchbox 17 is used to optimally couple the power emitted by the HF generator into the plasma.
  • a preferably flat magnetron cathode 7, 22 is positioned near the outer walls of the plasma chamber 1 as a so-called double cathode arrangement, opposite which the substrate holder 12 and, above all, the substrates, not shown, attached thereon are arranged.
  • the magnetron cathodes 7, 22 are constructed identically as follows:
  • the cooling system 6 serves to dissipate the heat generated in the target 8 during sputtering, and consists of a non-magnetizable material, for example in the form of a hollow profile, through which a cooling liquid preferably flows.
  • a magnet arrangement is arranged, consisting of individual permanent magnets 2, 3, 4, the polar direction of which (from the north to the south pole) within these magnets 2, 3, 4 extends transversely to the plane of the target 8.
  • the magnets 2, 3, 4, which are spaced apart in the direction of the main plane 23, have mutually opposite pole arrangements, so that an electrical flow from the ends of the magnets 2, 3, 4 facing the substrate holder to the adjacent magnet in the form of a semicircle or one Half ellipse results.
  • the magnets 2, 3, 4, however, are by a composite plate placed on the back of the magnets, which as Flußleit Solutions 5 serves, connected so that the magnetic flux takes place on the back of the magnets via the composite plate 5.
  • the target 8 is connected to a high-frequency generator 10 via a matchbox 9, which fulfills the same purpose as the matchbox 17 in the substrate holder 12, or also to a pulse generator or a DC voltage source.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne une pièce d'usure revêtue d'une couche de matière dure et un procédé pour fabriquer une telle pièce d'usure, ce procédé conservant ou améliorant les qualités d'adhérence et de résistance à l'usure, pour une structure de couches facile à réaliser. Cette pièce d'usure est composée d'un matériau de base sur lequel est appliquée une couche de matière dure contenant du carbone, le matériau de base n'étant pas de l'acier au carbone, mais de l'acier fortement allié, en particulier de l'acier chromé fortement allié. La présente invention porte également sur un procédé pour enduire le matériau de base d'une pièce d'usure avec une couche de matière dure, ce procédé se caractérisant en ce qu'une couche de liaison se trouve entre le matériau de base et la couche de matière dure, laquelle, contenant du carbone amorphe, est appliquée au moyen d'un procédé CVD et/ou PVD, notamment dans la même chambre de réaction que celle utilisée ultérieurement pour l'application de la couche de matière dure.
EP02747332A 2001-05-29 2002-05-29 Structure modifiee de couche de carbone sous forme de diamant amorphe (cda) Withdrawn EP1397526A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10126118 2001-05-29
DE2001126118 DE10126118A1 (de) 2001-05-29 2001-05-29 Modifizierter DLC-Schichtaufbau
PCT/EP2002/005931 WO2002097157A2 (fr) 2001-05-29 2002-05-29 Structure modifiee de couche de carbone sous forme de diamant amorphe (cda)

Publications (1)

Publication Number Publication Date
EP1397526A2 true EP1397526A2 (fr) 2004-03-17

Family

ID=7686506

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02747332A Withdrawn EP1397526A2 (fr) 2001-05-29 2002-05-29 Structure modifiee de couche de carbone sous forme de diamant amorphe (cda)

Country Status (3)

Country Link
EP (1) EP1397526A2 (fr)
DE (1) DE10126118A1 (fr)
WO (1) WO2002097157A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007047629A1 (de) 2007-04-13 2008-10-16 Stein, Ralf Verfahren zum Aufbringen einer hochfesten Beschichtung auf Werkstücke und/oder Werkstoffe
EP1980645A1 (fr) 2007-04-13 2008-10-15 Ralf Stein Procédé d'application d'un revêtement multicouche sur des pièces à usiner et/ou matières actives
DE102013203464A1 (de) 2013-02-28 2013-06-20 E.G.O. Elektro-Gerätebau GmbH Verfahren zur Herstellung einer Heizeinrichtung und Heizeinrichtung
EP3243946B1 (fr) 2016-05-12 2018-12-19 Groz-Beckert KG Outil textile, son utilisation et son procede de fabrication
PT3483319T (pt) 2017-11-09 2022-02-14 Groz Beckert Kg Ferramenta têxtil com película indicadora

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3047888A1 (de) * 1980-12-19 1982-07-15 Philips Patentverwaltung Gmbh, 2000 Hamburg "schneidwerkzeug, verfahren zu seiner herstellung und seine verwendung"
US4530750A (en) * 1981-03-20 1985-07-23 A. S. Laboratories, Inc. Apparatus for coating optical fibers
US5238741A (en) * 1989-10-19 1993-08-24 United Kingdom Atomic Energy Authority Silicon carbide filaments bearing a carbon layer and a titanium carbide or titanium boride layer
JP2804163B2 (ja) * 1990-08-27 1998-09-24 協和電線株式会社 光ファイバ素材の製造方法
US5249554A (en) * 1993-01-08 1993-10-05 Ford Motor Company Powertrain component with adherent film having a graded composition
KR100195605B1 (ko) * 1993-10-28 1999-06-15 모리시따 요오이 찌 다이아몬드형상의 박막형성방법 및 테이프구동장치
US5482602A (en) * 1993-11-04 1996-01-09 United Technologies Corporation Broad-beam ion deposition coating methods for depositing diamond-like-carbon coatings on dynamic surfaces
JPH1045327A (ja) * 1996-07-31 1998-02-17 Kyocera Corp 耐摩耗性ガイド材及びこれを用いたスレッドガイド
DE19749459A1 (de) * 1997-11-10 1999-05-20 Schmidt Betonwerk Gmbh C Läufer für Ringspinn- oder Ringzwirnmaschinen

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO02097157A3 *

Also Published As

Publication number Publication date
WO2002097157A2 (fr) 2002-12-05
WO2002097157A3 (fr) 2003-10-23
DE10126118A1 (de) 2002-12-12

Similar Documents

Publication Publication Date Title
EP0439561B1 (fr) Procede et dispositif d'enduction de substrats
DE102005033769B4 (de) Verfahren und Vorrichtung zur Mehrkathoden-PVD-Beschichtung und Substrat mit PVD-Beschichtung
EP0798399B1 (fr) Procédé pour le revêtement de substrats métalliques et céramiques
EP0990061B1 (fr) Procede et dispositif pour revetir un substrat par depot sous vide
EP2165003A1 (fr) Procédé de pvd et dispositif de pvd pour produire des couches fonctionnelles à faible frottement, résistant à l'usure et revêtements ainsi produits
DE3107914A1 (de) Verfahren und vorrichtung zum beschichten von formteilen durch katodenzerstaeubung
EP2893053B1 (fr) Procédé de production d'une couche de borocarbure métallique sur un substrat
DE4418906B4 (de) Verfahren zum Beschichten eines Substrates und Beschichtungsanlage zu seiner Durchführung
EP1362931A1 (fr) Procédé et dispositif pour la fabrication d'un système de couches de DLC
DE3919147C2 (de) Verfahren zum Beschichten eines Kunststoffsubstrats mit Aluminium
WO2017148582A1 (fr) Revêtement en carbone exempt d'hydrogène comprenant une couche adhésive de zirconium
DE102015114479A1 (de) Herstellungsverfahren für hartes gleitelement
DE102009008161A1 (de) Modifizierbare Magnetkonfiguration für Arc-Verdampfungsquellen
DE4115616A1 (de) Oberflaechenschicht fuer substrate insbesondere fuer arbeitswerkzeuge
WO2002097157A2 (fr) Structure modifiee de couche de carbone sous forme de diamant amorphe (cda)
DE102007004760A1 (de) Vorrichtung und Verfahren zum Beschichten von plattenförmigen oder bandförmigen metallischen Substraten
EP1876257A2 (fr) Procédé de fabrication d'un objet ayant différents coefficients de friction sur différentes zones superficielles ainsi qu'objet
DE102008022145B4 (de) Vorrichtung und Verfahren zum Hochleistungs-Puls-Gasfluß-Sputtern
DE4202211A1 (de) Sputteranlage mit wenigstens einer magnetron-kathode
EP3417086A1 (fr) Dispositif et procédé d'élaboration de propriétés définies de couches à gradient d'un système de revêtement multicouche dans le cas d'installations de pulvérisation cathodique
EP0974684A1 (fr) Film multicouche, et procédé de fabrication du film
DE3737404C2 (fr)
EP1427265A2 (fr) Dispositif et procédé de revêtement d'un substrat et revêtement d'un substrat
DE4034034C2 (fr)
DE202016006483U1 (de) Vorrichtung zur Herstellung definierter Eigenschaften von Gradientenschichten in einem System mehrlagiger Beschichtungen bei Sputter-Anlagen.

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20031218

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

AX Request for extension of the european patent

Extension state: AL LT LV MK RO SI

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: SAXONIA TEXTILE PARTS GMBH

17Q First examination report despatched

Effective date: 20061006

17Q First examination report despatched

Effective date: 20061006

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20121201