JP2007531269A - 装置の構成要素のプラズマエンハンスクリーニングの方法及びその処理装置 - Google Patents

装置の構成要素のプラズマエンハンスクリーニングの方法及びその処理装置 Download PDF

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Publication number
JP2007531269A
JP2007531269A JP2007504946A JP2007504946A JP2007531269A JP 2007531269 A JP2007531269 A JP 2007531269A JP 2007504946 A JP2007504946 A JP 2007504946A JP 2007504946 A JP2007504946 A JP 2007504946A JP 2007531269 A JP2007531269 A JP 2007531269A
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processing
chamber
monitoring
processing chamber
processing apparatus
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Japanese (ja)
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JP2007531269A5 (enExample
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ジョン・ウィリアムス・コステンコ
デヴィド・エル・オメーラ
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2007504946A 2004-03-25 2005-01-26 装置の構成要素のプラズマエンハンスクリーニングの方法及びその処理装置 Withdrawn JP2007531269A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/808,691 US20050211264A1 (en) 2004-03-25 2004-03-25 Method and processing system for plasma-enhanced cleaning of system components
PCT/US2005/002460 WO2005104186A2 (en) 2004-03-25 2005-01-26 Method and processing system for plasma-enhanced cleaning of system components

Publications (2)

Publication Number Publication Date
JP2007531269A true JP2007531269A (ja) 2007-11-01
JP2007531269A5 JP2007531269A5 (enExample) 2008-03-06

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JP2007504946A Withdrawn JP2007531269A (ja) 2004-03-25 2005-01-26 装置の構成要素のプラズマエンハンスクリーニングの方法及びその処理装置

Country Status (4)

Country Link
US (1) US20050211264A1 (enExample)
JP (1) JP2007531269A (enExample)
TW (1) TW200538565A (enExample)
WO (1) WO2005104186A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014209404A (ja) * 2008-10-22 2014-11-06 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高エネルギーイオンを使用する磁気薄膜のパターン化
US9263078B2 (en) 2008-02-12 2016-02-16 Applied Materials, Inc. Patterning of magnetic thin film using energized ions
WO2022065422A1 (ja) * 2020-09-24 2022-03-31 株式会社Kokusai Electric 基板処理装置、基板処理方法、半導体装置の製造方法及び記録媒体

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4272486B2 (ja) * 2003-08-29 2009-06-03 東京エレクトロン株式会社 薄膜形成装置及び薄膜形成装置の洗浄方法
TWI365919B (en) * 2004-12-28 2012-06-11 Tokyo Electron Ltd Film formation apparatus and method of using the same
JP4426518B2 (ja) * 2005-10-11 2010-03-03 東京エレクトロン株式会社 処理装置
US8343280B2 (en) * 2006-03-28 2013-01-01 Tokyo Electron Limited Multi-zone substrate temperature control system and method of operating
DE102006014298A1 (de) * 2006-03-28 2007-10-11 Infineon Technologies Ag Verfahren zur Herstellung von Strukturelementen in einem fotoempfindlichen Lack auf einem Substrat sowie Anordnung zur Durchführung eines thermischen Heizprozesses
US20070238301A1 (en) * 2006-03-28 2007-10-11 Cabral Stephen H Batch processing system and method for performing chemical oxide removal
DE202006007937U1 (de) * 2006-05-18 2007-09-20 Strämke, Siegfried, Dr.-Ing. Plasmabehandlungsanlage
US7718032B2 (en) 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
JP2008227033A (ja) * 2007-03-12 2008-09-25 Tokyo Electron Ltd 基板処理装置
JP4470970B2 (ja) * 2007-07-31 2010-06-02 東京エレクトロン株式会社 プラズマ処理装置
EP2202785A4 (en) * 2007-09-04 2010-11-10 Sharp Kk PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND SEMICONDUCTOR ELEMENT
JP5136574B2 (ja) * 2009-05-01 2013-02-06 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP6476369B2 (ja) * 2013-03-25 2019-03-06 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム
KR102638572B1 (ko) * 2015-06-17 2024-02-21 어플라이드 머티어리얼스, 인코포레이티드 프로세스 챔버 내의 가스 제어
US10121655B2 (en) 2015-11-20 2018-11-06 Applied Materials, Inc. Lateral plasma/radical source
US20190057860A1 (en) * 2017-08-18 2019-02-21 Lam Research Corporation Methods for improving performance in hafnium oxide-based ferroelectric material using plasma and/or thermal treatment
JP6956660B2 (ja) * 2018-03-19 2021-11-02 東京エレクトロン株式会社 クリーニング方法及び成膜装置
US11239060B2 (en) * 2018-05-29 2022-02-01 Taiwan Semiconductor Manufacturing Company, Ltd. Ion beam etching chamber with etching by-product redistributor
FR3112795B1 (fr) * 2020-07-22 2023-01-27 Commissariat Energie Atomique Dispositif de depot chimique en phase vapeur assiste par plasma permettant un depot sur les bords de plaque
CN113976546A (zh) * 2021-09-29 2022-01-28 深圳泰德半导体装备有限公司 等离子清洗方法及等离子清洗机
US20250163574A1 (en) * 2022-02-17 2025-05-22 Innovative Coating Solutions Plasma coating method and plasma coating system
CN114883229A (zh) * 2022-03-29 2022-08-09 北京北方华创微电子装备有限公司 晶舟及半导体设备
CN116251803B (zh) * 2023-04-12 2023-09-22 东莞市晟鼎精密仪器有限公司 基于微波等离子干法清洗氮化硅涂层的石墨舟清洗设备
CN120977894A (zh) * 2024-05-15 2025-11-18 盛美半导体设备(上海)股份有限公司 种子层预处理装置及方法、基板处理设备

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06103683B2 (ja) * 1990-08-07 1994-12-14 株式会社東芝 静電吸着方法
US5637153A (en) * 1993-04-30 1997-06-10 Tokyo Electron Limited Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus
JPH07176484A (ja) * 1993-06-28 1995-07-14 Applied Materials Inc 窒化アルミニューム面を有するサセプタをサセプタの浄化後珪化タングステンで処理することによって半導体ウエハ上に珪化タングステンを一様に堆積する方法
US5514246A (en) * 1994-06-02 1996-05-07 Micron Technology, Inc. Plasma reactors and method of cleaning a plasma reactor
US5507874A (en) * 1994-06-03 1996-04-16 Applied Materials, Inc. Method of cleaning of an electrostatic chuck in plasma reactors
JP2501180B2 (ja) * 1994-11-07 1996-05-29 株式会社日立製作所 プラズマ処理装置のクリ―ニング方法
JPH09171992A (ja) * 1995-12-20 1997-06-30 Hitachi Ltd ドライエッチング装置
US5709772A (en) * 1996-03-29 1998-01-20 Applied Materials, Inc. Non-plasma halogenated gas flow to prevent metal residues
US6534007B1 (en) * 1997-08-01 2003-03-18 Applied Komatsu Technology, Inc. Method and apparatus for detecting the endpoint of a chamber cleaning
US6321680B2 (en) * 1997-08-11 2001-11-27 Torrex Equipment Corporation Vertical plasma enhanced process apparatus and method
US5886865A (en) * 1998-03-17 1999-03-23 Applied Materials, Inc. Method and apparatus for predicting failure of an eletrostatic chuck
JP3296292B2 (ja) * 1998-06-26 2002-06-24 松下電器産業株式会社 エッチング方法、クリーニング方法、及びプラズマ処理装置
JP4055319B2 (ja) * 2000-02-18 2008-03-05 ソニー株式会社 半導体装置の製造方法
JP2002057106A (ja) * 2000-08-08 2002-02-22 Tokyo Electron Ltd 処理装置のクリーニング方法及び処理装置
JP3421329B2 (ja) * 2001-06-08 2003-06-30 東京エレクトロン株式会社 薄膜形成装置の洗浄方法
AU2003220019A1 (en) * 2002-03-20 2003-10-08 Tokyo Electron Limited Process monitoring using infrared optical diagnostics

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9263078B2 (en) 2008-02-12 2016-02-16 Applied Materials, Inc. Patterning of magnetic thin film using energized ions
JP2014209404A (ja) * 2008-10-22 2014-11-06 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高エネルギーイオンを使用する磁気薄膜のパターン化
WO2022065422A1 (ja) * 2020-09-24 2022-03-31 株式会社Kokusai Electric 基板処理装置、基板処理方法、半導体装置の製造方法及び記録媒体
JPWO2022065422A1 (enExample) * 2020-09-24 2022-03-31
JP7536106B2 (ja) 2020-09-24 2024-08-19 株式会社Kokusai Electric 基板処理装置、基板処理方法、半導体装置の製造方法及び記録媒体
US12354848B2 (en) 2020-09-24 2025-07-08 Kokusai Electric Corporation Substrate processing apparatus, substrate processing method, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

Also Published As

Publication number Publication date
WO2005104186A2 (en) 2005-11-03
US20050211264A1 (en) 2005-09-29
WO2005104186B1 (en) 2006-09-28
WO2005104186A3 (en) 2006-08-17
TW200538565A (en) 2005-12-01

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