JP2007531269A5 - - Google Patents
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- Publication number
- JP2007531269A5 JP2007531269A5 JP2007504946A JP2007504946A JP2007531269A5 JP 2007531269 A5 JP2007531269 A5 JP 2007531269A5 JP 2007504946 A JP2007504946 A JP 2007504946A JP 2007504946 A JP2007504946 A JP 2007504946A JP 2007531269 A5 JP2007531269 A5 JP 2007531269A5
- Authority
- JP
- Japan
- Prior art keywords
- processing
- chamber
- monitoring
- processing chamber
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000012545 processing Methods 0.000 claims 70
- 238000000034 method Methods 0.000 claims 25
- 238000012544 monitoring process Methods 0.000 claims 18
- 238000004140 cleaning Methods 0.000 claims 14
- 239000000463 material Substances 0.000 claims 13
- 238000012806 monitoring device Methods 0.000 claims 13
- 239000000758 substrate Substances 0.000 claims 10
- 239000007795 chemical reaction product Substances 0.000 claims 8
- 230000003287 optical effect Effects 0.000 claims 8
- 230000003993 interaction Effects 0.000 claims 4
- 230000031700 light absorption Effects 0.000 claims 4
- 235000012431 wafers Nutrition 0.000 claims 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910004129 HfSiO Inorganic materials 0.000 claims 2
- 229910004541 SiN Inorganic materials 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 2
- 229910006501 ZrSiO Inorganic materials 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 238000007599 discharging Methods 0.000 claims 2
- 229910002804 graphite Inorganic materials 0.000 claims 2
- 239000010439 graphite Substances 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- 239000010453 quartz Substances 0.000 claims 2
- 238000012216 screening Methods 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 238000012790 confirmation Methods 0.000 claims 1
- 239000000470 constituent Substances 0.000 claims 1
- -1 doped Si Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/808,691 US20050211264A1 (en) | 2004-03-25 | 2004-03-25 | Method and processing system for plasma-enhanced cleaning of system components |
| PCT/US2005/002460 WO2005104186A2 (en) | 2004-03-25 | 2005-01-26 | Method and processing system for plasma-enhanced cleaning of system components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007531269A JP2007531269A (ja) | 2007-11-01 |
| JP2007531269A5 true JP2007531269A5 (enExample) | 2008-03-06 |
Family
ID=34960427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007504946A Withdrawn JP2007531269A (ja) | 2004-03-25 | 2005-01-26 | 装置の構成要素のプラズマエンハンスクリーニングの方法及びその処理装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20050211264A1 (enExample) |
| JP (1) | JP2007531269A (enExample) |
| TW (1) | TW200538565A (enExample) |
| WO (1) | WO2005104186A2 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4272486B2 (ja) * | 2003-08-29 | 2009-06-03 | 東京エレクトロン株式会社 | 薄膜形成装置及び薄膜形成装置の洗浄方法 |
| TWI365919B (en) * | 2004-12-28 | 2012-06-11 | Tokyo Electron Ltd | Film formation apparatus and method of using the same |
| JP4426518B2 (ja) * | 2005-10-11 | 2010-03-03 | 東京エレクトロン株式会社 | 処理装置 |
| US20070238301A1 (en) * | 2006-03-28 | 2007-10-11 | Cabral Stephen H | Batch processing system and method for performing chemical oxide removal |
| US8343280B2 (en) * | 2006-03-28 | 2013-01-01 | Tokyo Electron Limited | Multi-zone substrate temperature control system and method of operating |
| DE102006014298A1 (de) * | 2006-03-28 | 2007-10-11 | Infineon Technologies Ag | Verfahren zur Herstellung von Strukturelementen in einem fotoempfindlichen Lack auf einem Substrat sowie Anordnung zur Durchführung eines thermischen Heizprozesses |
| DE202006007937U1 (de) * | 2006-05-18 | 2007-09-20 | Strämke, Siegfried, Dr.-Ing. | Plasmabehandlungsanlage |
| US7718032B2 (en) | 2006-06-22 | 2010-05-18 | Tokyo Electron Limited | Dry non-plasma treatment system and method of using |
| JP2008227033A (ja) * | 2007-03-12 | 2008-09-25 | Tokyo Electron Ltd | 基板処理装置 |
| JP4470970B2 (ja) * | 2007-07-31 | 2010-06-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US8395250B2 (en) | 2007-09-04 | 2013-03-12 | Kabushiki Kaisha Sharp | Plasma processing apparatus with an exhaust port above the substrate |
| US8535766B2 (en) | 2008-10-22 | 2013-09-17 | Applied Materials, Inc. | Patterning of magnetic thin film using energized ions |
| CN103996404B (zh) * | 2008-10-22 | 2017-08-04 | 应用材料公司 | 磁性记录媒体和在基板上图案化薄膜的方法 |
| JP5136574B2 (ja) * | 2009-05-01 | 2013-02-06 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP6476369B2 (ja) * | 2013-03-25 | 2019-03-06 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム |
| CN107835868B (zh) * | 2015-06-17 | 2020-04-10 | 应用材料公司 | 在处理腔室中的气体控制 |
| US10121655B2 (en) | 2015-11-20 | 2018-11-06 | Applied Materials, Inc. | Lateral plasma/radical source |
| US20190057860A1 (en) * | 2017-08-18 | 2019-02-21 | Lam Research Corporation | Methods for improving performance in hafnium oxide-based ferroelectric material using plasma and/or thermal treatment |
| JP6956660B2 (ja) * | 2018-03-19 | 2021-11-02 | 東京エレクトロン株式会社 | クリーニング方法及び成膜装置 |
| US11239060B2 (en) * | 2018-05-29 | 2022-02-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ion beam etching chamber with etching by-product redistributor |
| FR3112795B1 (fr) * | 2020-07-22 | 2023-01-27 | Commissariat Energie Atomique | Dispositif de depot chimique en phase vapeur assiste par plasma permettant un depot sur les bords de plaque |
| CN215925072U (zh) | 2020-09-24 | 2022-03-01 | 株式会社国际电气 | 基板处理装置 |
| CN113976546A (zh) * | 2021-09-29 | 2022-01-28 | 深圳泰德半导体装备有限公司 | 等离子清洗方法及等离子清洗机 |
| EP4479576A1 (en) * | 2022-02-17 | 2024-12-25 | Innovative Coating Solutions | Plasma coating method and plasma coating system |
| CN114883229A (zh) * | 2022-03-29 | 2022-08-09 | 北京北方华创微电子装备有限公司 | 晶舟及半导体设备 |
| CN116251803B (zh) * | 2023-04-12 | 2023-09-22 | 东莞市晟鼎精密仪器有限公司 | 基于微波等离子干法清洗氮化硅涂层的石墨舟清洗设备 |
| CN120977894A (zh) * | 2024-05-15 | 2025-11-18 | 盛美半导体设备(上海)股份有限公司 | 种子层预处理装置及方法、基板处理设备 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06103683B2 (ja) * | 1990-08-07 | 1994-12-14 | 株式会社東芝 | 静電吸着方法 |
| US5637153A (en) * | 1993-04-30 | 1997-06-10 | Tokyo Electron Limited | Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus |
| JPH07176484A (ja) * | 1993-06-28 | 1995-07-14 | Applied Materials Inc | 窒化アルミニューム面を有するサセプタをサセプタの浄化後珪化タングステンで処理することによって半導体ウエハ上に珪化タングステンを一様に堆積する方法 |
| US5514246A (en) * | 1994-06-02 | 1996-05-07 | Micron Technology, Inc. | Plasma reactors and method of cleaning a plasma reactor |
| US5507874A (en) * | 1994-06-03 | 1996-04-16 | Applied Materials, Inc. | Method of cleaning of an electrostatic chuck in plasma reactors |
| JP2501180B2 (ja) * | 1994-11-07 | 1996-05-29 | 株式会社日立製作所 | プラズマ処理装置のクリ―ニング方法 |
| JPH09171992A (ja) * | 1995-12-20 | 1997-06-30 | Hitachi Ltd | ドライエッチング装置 |
| US5709772A (en) * | 1996-03-29 | 1998-01-20 | Applied Materials, Inc. | Non-plasma halogenated gas flow to prevent metal residues |
| US6534007B1 (en) * | 1997-08-01 | 2003-03-18 | Applied Komatsu Technology, Inc. | Method and apparatus for detecting the endpoint of a chamber cleaning |
| US6321680B2 (en) * | 1997-08-11 | 2001-11-27 | Torrex Equipment Corporation | Vertical plasma enhanced process apparatus and method |
| US5886865A (en) * | 1998-03-17 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for predicting failure of an eletrostatic chuck |
| JP3296292B2 (ja) * | 1998-06-26 | 2002-06-24 | 松下電器産業株式会社 | エッチング方法、クリーニング方法、及びプラズマ処理装置 |
| JP4055319B2 (ja) * | 2000-02-18 | 2008-03-05 | ソニー株式会社 | 半導体装置の製造方法 |
| JP2002057106A (ja) * | 2000-08-08 | 2002-02-22 | Tokyo Electron Ltd | 処理装置のクリーニング方法及び処理装置 |
| JP3421329B2 (ja) * | 2001-06-08 | 2003-06-30 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法 |
| AU2003220019A1 (en) * | 2002-03-20 | 2003-10-08 | Tokyo Electron Limited | Process monitoring using infrared optical diagnostics |
-
2004
- 2004-03-25 US US10/808,691 patent/US20050211264A1/en not_active Abandoned
-
2005
- 2005-01-26 WO PCT/US2005/002460 patent/WO2005104186A2/en not_active Ceased
- 2005-01-26 JP JP2007504946A patent/JP2007531269A/ja not_active Withdrawn
- 2005-03-22 TW TW094108864A patent/TW200538565A/zh unknown
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