JP2007522771A - 増幅器用の適応型バイアス電流回路及び方法 - Google Patents
増幅器用の適応型バイアス電流回路及び方法 Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
- H03F1/0266—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the input signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/465—Power sensing
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45112—Indexing scheme relating to differential amplifiers the biasing of the differential amplifier being controlled from the input or the output signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45154—Indexing scheme relating to differential amplifiers the bias at the input of the amplifying transistors being controlled
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45394—Indexing scheme relating to differential amplifiers the AAC of the dif amp comprising FETs whose sources are not coupled, i.e. the AAC being a pseudo-differential amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45481—Indexing scheme relating to differential amplifiers the CSC comprising only a direct connection to the supply voltage, no other components being present
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Abstract
【選択図】図1
Description
本発明の各種特徴が、添付の請求項の中で説明されている。
Claims (22)
- RF増幅器の入力電力に応じて適応型バイアス電流を生成するための方法であって、
前記RF増幅器の負及び正の入力電圧を受けるステップと、
前記RF増幅器の前記負及び正の入力電圧に応じて差動電流を生成するステップであって、ここで前記差動電流を前記RF増幅器の通常動作範囲内にクリップさせるステップと、
前記差動電流からの少なくとも1つの高調波をフィルタリングするステップとを含む方法。 - 前記生成するステップを実行する回路を駆動するために用いられる静止バイアス電流を、前記差動電流から減じ、入力電力に応じて前記適応型バイアス電流を生成するステップをさらに含む、請求項1に記載の方法。
- 前記適応型バイアス電流を乗算するステップをさらに含む、請求項1に記載の方法。
- 前記乗算するステップが、前記適応型バイアス電流を一定の比だけ乗算することを含む、請求項3に記載の方法。
- 前記乗算するステップが、前記適応型バイアス電流をプログラム可能な比だけ乗算する第2段目の乗算をさらに含む、請求項4に記載の方法。
- 前記生成ステップが、
前記入力電力の負電圧に応じて第1の電流を生成するステップと、
前記入力電力の正電圧に応じて第2の電流を生成するステップと、
前記第1の電流と前記第2の電流を加算し差動電流を生成するステップとを含む、請求項1に記載の方法。 - 前記高調波をフィルタリングするステップが、前記RF増幅器の前記負及び正入力電圧に応答した前記差動電流をローパス・フィルタリングすることを含む、請求項1に記載の方法。
- 前記ローパス・フィルタリングするステップが、歪成分を除去するに足る極周波数の低さで実行され、且つ前記RF増幅器の信号エンベロープに応じるに足る極周波数の高さで実行される、請求項7に記載の方法。
- RF増幅器の入力電力に応じてバイアス電流を生成するための適応型バイアス電流回路であって、
静止電流を供給する電流供給手段と、
前記静止電流によってバイアスされ、前記RF増幅器の入力電力の検出と、前記入力電力が高いレベルに達したときに前記入力電力に応じた前記静止電流よりも高いバイアス電流を生成するための、差動電力センサ手段とを含む、バイアス電流回路。 - 前記バイアス電流から高調波をフィルタリングするためのローパス・フィルタ手段をさらに含む、請求項9に記載の回路。
- 前記バイアス電流を乗算するための第1の電流乗算手段をさらに含む、請求項10に記載の回路。
- 前記バイアス電流をプログラム可能な増倍率だけ乗算するための、第2の電流乗算手段をさらに含む、請求項11に記載の回路。
- 前記差動電力センサ手段が、
前記RF増幅器の入力電力の正電圧相に応じて第1の電流を生成する手段と、
前記RF増幅器の入力電力の負電圧相に応じて第2の電流を生成する手段と、
前記第1の電流と前記第2の電流を加算し前記バイアス電流を生成する手段とを含む、請求項9に記載の回路。 - 前記バイアス電流から高調波をフィルタリングするためのローパス・フィルタ手段をさらに含む、請求項13に記載の回路。
- 前記バイアス電流を乗算するための電流乗算手段をさらに含む、請求項14に記載の回路。
- RF増幅器の入力電力に応じてバイアス電流を生成するための適応型バイアス電流回路であって、
静止電流を供給する静止電流バイアス供給回路(26)と、
前記静止電流によってバイアスされ、前記RF増幅器の前記入力電力の正電圧相に応じて第1のコレクタ電流を生成する第1のトランジスタと、前記RF増幅器の前記入力電力の正電圧相に応じて第2のコレクタ電流を生成する第2のトランジスタとを含み、前記RF増幅器の前記入力電力が所定のレベルに達したとき前記第1及び第2のコレクタ電流をクリップさせるように前記静止電流が設定される、差動トランジスタ・ペア(28)と、
前記バイアス電流を生成するために前記第1と第2のコレクタ電流を加算する電流加算器とを含むバイアス電流回路。 - 前記バイアス電流を受けてフィルタリングするローパス・フィルタをさらに含む、請求項16に記載の回路。
- 前記バイアス電流をミラー化する第1の電流ミラーと、
前記静止電流に対応する電流の量を前記バイアス電流から差し引く減算器と、
前記バイアス電流のミラー化と乗算を行う第2の電流ミラーとを含む、請求項17に記載の回路。 - 前記バイアス電流を乗算するためのプログラム可能な第3の電流ミラーをさらに含む、請求項18に記載の回路。
- RF増幅器であって、
請求項16に記載の電流バイアス回路と、
前記電流バイアス回路からの前記バイアス電流を受ける増幅回路とを含む増幅器。 - 前記増幅回路の中に、縮退抵抗を含む出力トランジスタ増幅器をさらに含む、請求項20に記載のRF増幅器。
- 適応型バイアス電流回路であって、
静止電流を供給するように構成された電流供給器(26)と、
少なくとも前記静止電流によってバイアスされるように構成され、並びに前記RF増幅器の入力電力を測定するように、及び前記入力電力が所定の高いレベルに到達したときに前記静止電流よりも大きく前記入力電力にほぼ比例するバイアス電流を生成するように構成された、差動電力センサとを含むバイアス電流回路。
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US54471904P | 2004-02-13 | 2004-02-13 | |
US60/544,719 | 2004-02-13 | ||
PCT/US2005/004429 WO2005079313A2 (en) | 2004-02-13 | 2005-02-14 | Adaptive bias current circuit and method for amplifiers |
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JP2007522771A true JP2007522771A (ja) | 2007-08-09 |
JP5079336B2 JP5079336B2 (ja) | 2012-11-21 |
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EP (1) | EP1714384A4 (ja) |
JP (1) | JP5079336B2 (ja) |
KR (1) | KR101124116B1 (ja) |
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- 2005-02-14 KR KR1020067016294A patent/KR101124116B1/ko active IP Right Grant
- 2005-02-14 CN CN200580006396XA patent/CN1934784B/zh not_active Expired - Fee Related
- 2005-02-14 EP EP05713395A patent/EP1714384A4/en not_active Withdrawn
- 2005-02-14 JP JP2006553279A patent/JP5079336B2/ja active Active
- 2005-02-14 WO PCT/US2005/004429 patent/WO2005079313A2/en active Application Filing
- 2005-02-14 US US10/587,414 patent/US7567123B2/en active Active
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Cited By (3)
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JP2010273284A (ja) * | 2009-05-25 | 2010-12-02 | Mitsubishi Electric Corp | 高周波増幅器 |
JP2015095673A (ja) * | 2013-11-08 | 2015-05-18 | 富士通セミコンダクター株式会社 | 増幅器 |
JPWO2017175295A1 (ja) * | 2016-04-05 | 2018-07-19 | 三菱電機株式会社 | 増幅器 |
Also Published As
Publication number | Publication date |
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CN1934784B (zh) | 2010-05-12 |
CN1934784A (zh) | 2007-03-21 |
WO2005079313A3 (en) | 2006-01-12 |
KR101124116B1 (ko) | 2012-03-21 |
KR20060129383A (ko) | 2006-12-15 |
WO2005079313A2 (en) | 2005-09-01 |
US7567123B2 (en) | 2009-07-28 |
EP1714384A2 (en) | 2006-10-25 |
EP1714384A4 (en) | 2008-05-07 |
US20070252646A1 (en) | 2007-11-01 |
JP5079336B2 (ja) | 2012-11-21 |
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