JP2007521649A - バンド設計超格子を有する半導体装置 - Google Patents
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H01L29/1025—Channel region of field-effect devices
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- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
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- H01L29/151—Compositional structures
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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Abstract
Description
and Materials Science & Processingのp391−402には、シリコンと酸素の半導体−原子超格子(SAS)が示されている。Si/O超格子は、シリコン量子素子および発光装置に有益であることが示されている。特に、緑のエレクトロルミネッセンスダイオード構造が構成され、評価されている。ダイオード構造内の電流の向きは、縦方向、すなわちSASの層に対して垂直である。示されているSASは、酸素原子、CO分子等の吸着化学種によって分離された半導体層を有しても良い。酸素の吸着分子層上でのシリコン成長は、低欠陥密度でエピタキシャルであることが示されている。あるSAS構造は、1.1nm厚さのシリコン部分を有し、この部分は、シリコンの約8原子層で構成され、別の構造は、このシリコン厚さの2倍の厚さを有する。Luoらの「直接ギャップ発光シリコンの化学設計」、Physical Review Letters、89巻、7号(2002年8月12日)には、さらにTsuの発光SAS構造が示されている。
電子の場合、
である。ここで、fはフェルミ−ディラック分布であり、EFはフェルミ順位、Tは温度、E(k,n)は、波動ベクトルk とn番目のエネルギーバンドに対応する状態での電子のエネルギー、添え字iとjは、デカルト座標x、yおよびzを意味し、積分はブリユアン領域(B. Z.)を表し、加重総和は、それぞれ電子およびホールの、フェルミエネルギーを越えるまたはフェルミエネルギー未満のエネルギー持つバンドを表す。
Claims (20)
- 複数の積層された層群を有する超格子と、
積層された層群と平行な方向に、前記超格子を通る電荷キャリアの輸送が生じる領域と、
を有する半導体装置であって、
前記超格子の各層群は、基本半導体部分を定形する複数の積層された基本半導体分子層と、該基本半導体部分上のエネルギーバンド調整層と、を有し、
前記エネルギーバンド調整層は、基本半導体部分に隣接する結晶格子内に取り込まれた、少なくとも一つの非半導体分子層を有し、前記超格子は、該超格子が存在しない場合に比べて、前記平行な方向において大きな電荷キャリア移動度を有することを特徴とする半導体装置。 - 前記超格子は、共通のエネルギーバンド構造を有することを特徴とする請求項1に記載の半導体装置。
- 大きな移動度を有する電荷キャリアは、少なくとも一つの電子およびホールを有することを特徴とする請求項1に記載の半導体装置。
- 各基本半導体部分は、シリコンを含むことを特徴とする請求項1に記載の半導体装置。
- 各エネルギーバンド調整層は、酸素を含むことを特徴とする請求項1に記載の半導体装置。
- 各エネルギーバンド調整層は、単一の分子層厚さであることを特徴とする請求項1に記載の半導体装置。
- 各基本半導体部分は、8分子層厚さ未満であることを特徴とする請求項1に記載の半導体装置。
- 各基本半導体部分は、2乃至6分子層厚さであることを特徴とする請求項1に記載の半導体装置。
- さらに前記超格子は、実質的に直接エネルギーバンドギャップを有することを特徴とする請求項1に記載の半導体装置。
- さらに前記超格子は、層群の最上部に基本半導体キャップ層を有することを特徴とする請求項1に記載の半導体装置。
- 全ての前記基本半導体部分は、同数の分子層厚さであることを特徴とする請求項1に記載の半導体装置。
- 前記基本半導体部分の少なくとも一部は、異なる数の分子層厚さであることを特徴とする請求項1に記載の半導体装置。
- 全ての前記基本半導体部分は、異なる数の分子層厚さであることを特徴とする請求項1に記載の半導体装置。
- 各非半導体分子層は、次の層の成膜の間、熱的に安定であることを特徴とする請求項1に記載の半導体装置。
- 各基本半導体部分は、IV族半導体、III−V族半導体およびII−VI族半導体からなる群から選定された基本半導体を有することを特徴とする請求項1に記載の半導体装置。
- 各エネルギーバンド調整層は、酸素、窒素、フッ素および炭素−酸素からなる群から選定された非半導体を有することを特徴とする請求項1に記載の半導体装置。
- さらに、前記超格子と隣接する基板を有することを特徴とする請求項1に記載の半導体装置。
- 大きな電荷キャリア移動度は、前記超格子が存在しない場合に比べて、前記平行な方向における電荷キャリアの電気伝導度有効質量が低いために得られることを特徴とする請求項1に記載の半導体装置。
- 低い電気伝導度有効質量は、前記超格子が存在しない場合の電気伝導度有効質量の2/3以下であることを特徴とする請求項18に記載の半導体装置。
- さらに前記超格子は、少なくとも一つの種類の導電性ドーパントを有することを特徴とする請求項1に記載の半導体装置。
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US10/603,696 US20040262594A1 (en) | 2003-06-26 | 2003-06-26 | Semiconductor structures having improved conductivity effective mass and methods for fabricating same |
US10/603,696 | 2003-06-26 | ||
US10/603,621 US20040266116A1 (en) | 2003-06-26 | 2003-06-26 | Methods of fabricating semiconductor structures having improved conductivity effective mass |
US10/603,621 | 2003-06-26 | ||
US10/647,060 | 2003-08-22 | ||
US10/647,060 US6958486B2 (en) | 2003-06-26 | 2003-08-22 | Semiconductor device including band-engineered superlattice |
PCT/US2004/020652 WO2005034245A1 (en) | 2003-06-26 | 2004-06-28 | Semiconductor device including band-engineered superlattice |
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JP2006515377A Expired - Fee Related JP4918354B2 (ja) | 2003-06-26 | 2004-06-28 | バンド設計超格子を有する半導体装置を製作する方法 |
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US (8) | US6897472B2 (ja) |
EP (2) | EP1644984B1 (ja) |
JP (5) | JP4742035B2 (ja) |
AU (2) | AU2004306355B2 (ja) |
CA (2) | CA2530050A1 (ja) |
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