JP2007521140A - 高い完全度のスパッタリングターゲット材料及びそれを大量に製造する方法 - Google Patents

高い完全度のスパッタリングターゲット材料及びそれを大量に製造する方法 Download PDF

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Publication number
JP2007521140A
JP2007521140A JP2006547211A JP2006547211A JP2007521140A JP 2007521140 A JP2007521140 A JP 2007521140A JP 2006547211 A JP2006547211 A JP 2006547211A JP 2006547211 A JP2006547211 A JP 2006547211A JP 2007521140 A JP2007521140 A JP 2007521140A
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JP
Japan
Prior art keywords
metal plate
rolling
less
thickness
plate according
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2006547211A
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English (en)
Japanese (ja)
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JP2007521140A5 (enExample
Inventor
ミカルク，クリストファー　エー．
イー． フーバー，ルイス
アレクサンダー，ピー．トッド
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Cabot Corp
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Cabot Corp
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Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of JP2007521140A publication Critical patent/JP2007521140A/ja
Publication of JP2007521140A5 publication Critical patent/JP2007521140A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon
    • C22F1/183—High-melting or refractory metals or alloys based thereon of titanium or alloys based thereon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Metal Rolling (AREA)
JP2006547211A 2003-12-22 2004-12-20 高い完全度のスパッタリングターゲット材料及びそれを大量に製造する方法 Pending JP2007521140A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53181303P 2003-12-22 2003-12-22
PCT/US2004/042734 WO2005064037A2 (en) 2003-12-22 2004-12-20 High integrity sputtering target material and method for producing bulk quantities of same

Publications (2)

Publication Number Publication Date
JP2007521140A true JP2007521140A (ja) 2007-08-02
JP2007521140A5 JP2007521140A5 (enExample) 2008-02-14

Family

ID=34738707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006547211A Pending JP2007521140A (ja) 2003-12-22 2004-12-20 高い完全度のスパッタリングターゲット材料及びそれを大量に製造する方法

Country Status (6)

Country Link
US (1) US20050236076A1 (enExample)
EP (1) EP1704266A2 (enExample)
JP (1) JP2007521140A (enExample)
CN (1) CN1985021A (enExample)
TW (1) TW200523375A (enExample)
WO (1) WO2005064037A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050252268A1 (en) * 2003-12-22 2005-11-17 Michaluk Christopher A High integrity sputtering target material and method for producing bulk quantities of same
DE112007000440B4 (de) * 2006-03-07 2021-01-07 Global Advanced Metals, Usa, Inc. Verfahren zum Erzeugen von verformten Metallartikeln
CN102091733B (zh) * 2009-12-09 2013-02-13 宁波江丰电子材料有限公司 高纯度铜靶材的制作方法
CN102489951B (zh) * 2011-12-03 2013-11-27 西北有色金属研究院 一种溅射用铌管状靶材的制备方法
CN102873093B (zh) * 2012-10-31 2014-12-03 西安诺博尔稀贵金属材料有限公司 一种大尺寸钽板材的制备方法
CN104419901B (zh) * 2013-08-27 2017-06-30 宁波江丰电子材料股份有限公司 一种钽靶材的制造方法
JP6553813B2 (ja) * 2017-03-30 2019-07-31 Ｊｘ金属株式会社 タンタルスパッタリングターゲット
US11062889B2 (en) 2017-06-26 2021-07-13 Tosoh Smd, Inc. Method of production of uniform metal plates and sputtering targets made thereby
CN107584251B (zh) * 2017-09-08 2019-04-16 西北有色金属研究院 一种钽合金异形件的成形方法
CN110394603B (zh) * 2019-07-29 2023-05-09 福建阿石创新材料股份有限公司 一种金属旋转靶材及其制备方法和应用
CN111440938B (zh) * 2020-04-21 2022-01-28 合肥工业大学 一种轧制纯钽箔的退火强化工艺方法
CN115518981A (zh) * 2022-10-11 2022-12-27 西南铝业（集团）有限责任公司 一种2xxx系铝锂合金薄宽板的轧制工艺

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001504898A (ja) * 1996-12-04 2001-04-10 アルミニウム ペシネイ アルミニウム合金製陰極スパッタリング標的
JP2002518593A (ja) * 1998-06-17 2002-06-25 ジヨンソン マテイ エレクトロニクス，インコーポレーテツド 微細で一様な構造とテキスチュアを有する金属製品及びその製造方法
JP2002530534A (ja) * 1998-11-25 2002-09-17 キャボット コーポレイション 高純度タンタルおよびそれを含む、スパッタターゲットのような製品
JP2004536958A (ja) * 2000-11-27 2004-12-09 キャボット　コーポレイション 中空カソードターゲットおよびその製造方法

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US1370328A (en) * 1921-03-01 Method of making tubes
DE2037542A1 (de) * 1970-07-29 1972-02-10 Deutsche Edelstahlwerke AG, 4150Krefeld Verfahren zur Verminderung der Langs streifigkeit kaltgewalzter Bander aus rost und säurebeständigem Chromstahl
US3954514A (en) * 1975-04-02 1976-05-04 Lockheed Missiles & Space Company, Inc. Textureless forging of beryllium
US4092181A (en) * 1977-04-25 1978-05-30 Rockwell International Corporation Method of imparting a fine grain structure to aluminum alloys having precipitating constituents
FR2475426A1 (fr) * 1980-02-12 1981-08-14 Secim Procede de realisation de fils metalliques
FR2529578B1 (fr) * 1982-07-02 1986-04-11 Cegedur Procede pour ameliorer a la fois la resistance a la fatigue et la tenacite des alliages d'al a haute resistance
JPS61210158A (ja) * 1985-03-15 1986-09-18 Sumitomo Metal Ind Ltd 超塑性２相ステンレス鋼およびその熱間加工法
US4721537A (en) * 1985-10-15 1988-01-26 Rockwell International Corporation Method of producing a fine grain aluminum alloy using three axes deformation
US4722754A (en) * 1986-09-10 1988-02-02 Rockwell International Corporation Superplastically formable aluminum alloy and composite material
CH682326A5 (enExample) * 1990-06-11 1993-08-31 Alusuisse Lonza Services Ag
FR2664618B1 (fr) * 1990-07-10 1993-10-08 Pechiney Aluminium Procede de fabrication de cathodes pour pulverisation cathodique a base d'aluminium de tres haute purete.
US5087297A (en) * 1991-01-17 1992-02-11 Johnson Matthey Inc. Aluminum target for magnetron sputtering and method of making same
US5370839A (en) * 1991-07-05 1994-12-06 Nippon Steel Corporation Tial-based intermetallic compound alloys having superplasticity
DE69420124T2 (de) * 1993-01-15 2000-03-02 Abbott Laboratories, Abbott Park Strukturierte lipide
JP2600065B2 (ja) * 1994-03-08 1997-04-16 協和メデックス株式会社 高密度リポ蛋白中のコレステロールの定量法
US5850755A (en) * 1995-02-08 1998-12-22 Segal; Vladimir M. Method and apparatus for intensive plastic deformation of flat billets
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US6323055B1 (en) * 1998-05-27 2001-11-27 The Alta Group, Inc. Tantalum sputtering target and method of manufacture
US6193821B1 (en) * 1998-08-19 2001-02-27 Tosoh Smd, Inc. Fine grain tantalum sputtering target and fabrication process
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IL156802A0 (en) * 2001-01-11 2004-02-08 Cabot Corp Tantalum and niobium billets and methods of producing same
DE60231538D1 (de) * 2001-11-26 2009-04-23 Nikko Materials Co Ltd Sputtertarget und herstellungsverfahren dafür
JP4376487B2 (ja) * 2002-01-18 2009-12-02 日鉱金属株式会社 高純度ニッケル合金ターゲットの製造方法
US6890393B2 (en) * 2003-02-07 2005-05-10 Advanced Steel Technology, Llc Fine-grained martensitic stainless steel and method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001504898A (ja) * 1996-12-04 2001-04-10 アルミニウム ペシネイ アルミニウム合金製陰極スパッタリング標的
JP2002518593A (ja) * 1998-06-17 2002-06-25 ジヨンソン マテイ エレクトロニクス，インコーポレーテツド 微細で一様な構造とテキスチュアを有する金属製品及びその製造方法
JP2002530534A (ja) * 1998-11-25 2002-09-17 キャボット コーポレイション 高純度タンタルおよびそれを含む、スパッタターゲットのような製品
JP2004536958A (ja) * 2000-11-27 2004-12-09 キャボット　コーポレイション 中空カソードターゲットおよびその製造方法

Also Published As

Publication number Publication date
CN1985021A (zh) 2007-06-20
US20050236076A1 (en) 2005-10-27
WO2005064037A2 (en) 2005-07-14
TW200523375A (en) 2005-07-16
EP1704266A2 (en) 2006-09-27
WO2005064037A3 (en) 2005-12-08

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