TW200523375A - High integrity sputtering target material and method for producing bulk quantities of same - Google Patents
High integrity sputtering target material and method for producing bulk quantities of same Download PDFInfo
- Publication number
- TW200523375A TW200523375A TW093140138A TW93140138A TW200523375A TW 200523375 A TW200523375 A TW 200523375A TW 093140138 A TW093140138 A TW 093140138A TW 93140138 A TW93140138 A TW 93140138A TW 200523375 A TW200523375 A TW 200523375A
- Authority
- TW
- Taiwan
- Prior art keywords
- less
- rolling
- metal plate
- thickness
- plate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000005477 sputtering target Methods 0.000 title abstract description 10
- 239000013077 target material Substances 0.000 title description 3
- 229910052751 metal Inorganic materials 0.000 claims abstract description 82
- 239000002184 metal Substances 0.000 claims abstract description 82
- 238000000034 method Methods 0.000 claims abstract description 64
- 238000005096 rolling process Methods 0.000 claims description 98
- 229910000831 Steel Inorganic materials 0.000 claims description 60
- 239000010959 steel Substances 0.000 claims description 60
- 239000002245 particle Substances 0.000 claims description 50
- 230000009467 reduction Effects 0.000 claims description 48
- 239000004579 marble Substances 0.000 claims description 30
- 230000008859 change Effects 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 13
- 238000005259 measurement Methods 0.000 claims description 11
- 239000007921 spray Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- 210000001161 mammalian embryo Anatomy 0.000 claims description 7
- 238000005452 bending Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 238000005266 casting Methods 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 238000005242 forging Methods 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000003384 imaging method Methods 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 4
- 238000000926 separation method Methods 0.000 description 33
- 239000000463 material Substances 0.000 description 28
- 238000012545 processing Methods 0.000 description 21
- 238000005549 size reduction Methods 0.000 description 21
- 239000000047 product Substances 0.000 description 13
- 238000005097 cold rolling Methods 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 9
- 229910052715 tantalum Inorganic materials 0.000 description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- 238000000227 grinding Methods 0.000 description 6
- 238000005098 hot rolling Methods 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000012467 final product Substances 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005272 metallurgy Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 210000002257 embryonic structure Anatomy 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- YOCIJWAHRAJQFT-UHFFFAOYSA-N 2-bromo-2-methylpropanoyl bromide Chemical compound CC(C)(Br)C(Br)=O YOCIJWAHRAJQFT-UHFFFAOYSA-N 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- HIFJUMGIHIZEPX-UHFFFAOYSA-N sulfuric acid;sulfur trioxide Chemical compound O=S(=O)=O.OS(O)(=O)=O HIFJUMGIHIZEPX-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
- C22F1/183—High-melting or refractory metals or alloys based thereon of titanium or alloys based thereon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Metal Rolling (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US53181303P | 2003-12-22 | 2003-12-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200523375A true TW200523375A (en) | 2005-07-16 |
Family
ID=34738707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093140138A TW200523375A (en) | 2003-12-22 | 2004-12-22 | High integrity sputtering target material and method for producing bulk quantities of same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20050236076A1 (enExample) |
| EP (1) | EP1704266A2 (enExample) |
| JP (1) | JP2007521140A (enExample) |
| CN (1) | CN1985021A (enExample) |
| TW (1) | TW200523375A (enExample) |
| WO (1) | WO2005064037A2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050252268A1 (en) * | 2003-12-22 | 2005-11-17 | Michaluk Christopher A | High integrity sputtering target material and method for producing bulk quantities of same |
| DE112007000440B4 (de) * | 2006-03-07 | 2021-01-07 | Global Advanced Metals, Usa, Inc. | Verfahren zum Erzeugen von verformten Metallartikeln |
| CN102091733B (zh) * | 2009-12-09 | 2013-02-13 | 宁波江丰电子材料有限公司 | 高纯度铜靶材的制作方法 |
| CN102489951B (zh) * | 2011-12-03 | 2013-11-27 | 西北有色金属研究院 | 一种溅射用铌管状靶材的制备方法 |
| CN102873093B (zh) * | 2012-10-31 | 2014-12-03 | 西安诺博尔稀贵金属材料有限公司 | 一种大尺寸钽板材的制备方法 |
| CN104419901B (zh) * | 2013-08-27 | 2017-06-30 | 宁波江丰电子材料股份有限公司 | 一种钽靶材的制造方法 |
| JP6553813B2 (ja) * | 2017-03-30 | 2019-07-31 | Ｊｘ金属株式会社 | タンタルスパッタリングターゲット |
| US11062889B2 (en) | 2017-06-26 | 2021-07-13 | Tosoh Smd, Inc. | Method of production of uniform metal plates and sputtering targets made thereby |
| CN107584251B (zh) * | 2017-09-08 | 2019-04-16 | 西北有色金属研究院 | 一种钽合金异形件的成形方法 |
| CN110394603B (zh) * | 2019-07-29 | 2023-05-09 | 福建阿石创新材料股份有限公司 | 一种金属旋转靶材及其制备方法和应用 |
| CN111440938B (zh) * | 2020-04-21 | 2022-01-28 | 合肥工业大学 | 一种轧制纯钽箔的退火强化工艺方法 |
| CN115518981A (zh) * | 2022-10-11 | 2022-12-27 | 西南铝业（集团）有限责任公司 | 一种2xxx系铝锂合金薄宽板的轧制工艺 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1370328A (en) * | 1921-03-01 | Method of making tubes | ||
| DE2037542A1 (de) * | 1970-07-29 | 1972-02-10 | Deutsche Edelstahlwerke AG, 4150Krefeld | Verfahren zur Verminderung der Langs streifigkeit kaltgewalzter Bander aus rost und säurebeständigem Chromstahl |
| US3954514A (en) * | 1975-04-02 | 1976-05-04 | Lockheed Missiles & Space Company, Inc. | Textureless forging of beryllium |
| US4092181A (en) * | 1977-04-25 | 1978-05-30 | Rockwell International Corporation | Method of imparting a fine grain structure to aluminum alloys having precipitating constituents |
| FR2475426A1 (fr) * | 1980-02-12 | 1981-08-14 | Secim | Procede de realisation de fils metalliques |
| FR2529578B1 (fr) * | 1982-07-02 | 1986-04-11 | Cegedur | Procede pour ameliorer a la fois la resistance a la fatigue et la tenacite des alliages d'al a haute resistance |
| JPS61210158A (ja) * | 1985-03-15 | 1986-09-18 | Sumitomo Metal Ind Ltd | 超塑性２相ステンレス鋼およびその熱間加工法 |
| US4721537A (en) * | 1985-10-15 | 1988-01-26 | Rockwell International Corporation | Method of producing a fine grain aluminum alloy using three axes deformation |
| US4722754A (en) * | 1986-09-10 | 1988-02-02 | Rockwell International Corporation | Superplastically formable aluminum alloy and composite material |
| CH682326A5 (enExample) * | 1990-06-11 | 1993-08-31 | Alusuisse Lonza Services Ag | |
| FR2664618B1 (fr) * | 1990-07-10 | 1993-10-08 | Pechiney Aluminium | Procede de fabrication de cathodes pour pulverisation cathodique a base d'aluminium de tres haute purete. |
| US5087297A (en) * | 1991-01-17 | 1992-02-11 | Johnson Matthey Inc. | Aluminum target for magnetron sputtering and method of making same |
| US5370839A (en) * | 1991-07-05 | 1994-12-06 | Nippon Steel Corporation | Tial-based intermetallic compound alloys having superplasticity |
| DE69420124T2 (de) * | 1993-01-15 | 2000-03-02 | Abbott Laboratories, Abbott Park | Strukturierte lipide |
| JP2600065B2 (ja) * | 1994-03-08 | 1997-04-16 | 協和メデックス株式会社 | 高密度リポ蛋白中のコレステロールの定量法 |
| US5850755A (en) * | 1995-02-08 | 1998-12-22 | Segal; Vladimir M. | Method and apparatus for intensive plastic deformation of flat billets |
| FR2756572B1 (fr) * | 1996-12-04 | 1999-01-08 | Pechiney Aluminium | Alliages d'aluminium a temperature de recristallisation elevee utilisee dans les cibles de pulverisation cathodiques |
| US6569270B2 (en) * | 1997-07-11 | 2003-05-27 | Honeywell International Inc. | Process for producing a metal article |
| US6323055B1 (en) * | 1998-05-27 | 2001-11-27 | The Alta Group, Inc. | Tantalum sputtering target and method of manufacture |
| US6348139B1 (en) * | 1998-06-17 | 2002-02-19 | Honeywell International Inc. | Tantalum-comprising articles |
| US6193821B1 (en) * | 1998-08-19 | 2001-02-27 | Tosoh Smd, Inc. | Fine grain tantalum sputtering target and fabrication process |
| US6348113B1 (en) * | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
| US6463339B1 (en) * | 1999-09-27 | 2002-10-08 | Rockwell Automation Technologies, Inc. | High reliability industrial controller using tandem independent programmable gate-arrays |
| US20040072009A1 (en) * | 1999-12-16 | 2004-04-15 | Segal Vladimir M. | Copper sputtering targets and methods of forming copper sputtering targets |
| US6331233B1 (en) * | 2000-02-02 | 2001-12-18 | Honeywell International Inc. | Tantalum sputtering target with fine grains and uniform texture and method of manufacture |
| US6887356B2 (en) * | 2000-11-27 | 2005-05-03 | Cabot Corporation | Hollow cathode target and methods of making same |
| IL156802A0 (en) * | 2001-01-11 | 2004-02-08 | Cabot Corp | Tantalum and niobium billets and methods of producing same |
| DE60231538D1 (de) * | 2001-11-26 | 2009-04-23 | Nikko Materials Co Ltd | Sputtertarget und herstellungsverfahren dafür |
| JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
| US6890393B2 (en) * | 2003-02-07 | 2005-05-10 | Advanced Steel Technology, Llc | Fine-grained martensitic stainless steel and method thereof |
-
2004
- 2004-12-20 WO PCT/US2004/042734 patent/WO2005064037A2/en not_active Ceased
- 2004-12-20 US US11/017,224 patent/US20050236076A1/en not_active Abandoned
- 2004-12-20 EP EP04814868A patent/EP1704266A2/en not_active Withdrawn
- 2004-12-20 CN CNA2004800419912A patent/CN1985021A/zh active Pending
- 2004-12-20 JP JP2006547211A patent/JP2007521140A/ja active Pending
- 2004-12-22 TW TW093140138A patent/TW200523375A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN1985021A (zh) | 2007-06-20 |
| US20050236076A1 (en) | 2005-10-27 |
| WO2005064037A2 (en) | 2005-07-14 |
| JP2007521140A (ja) | 2007-08-02 |
| EP1704266A2 (en) | 2006-09-27 |
| WO2005064037A3 (en) | 2005-12-08 |
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