JP2007507905A5 - - Google Patents
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- Publication number
- JP2007507905A5 JP2007507905A5 JP2006534203A JP2006534203A JP2007507905A5 JP 2007507905 A5 JP2007507905 A5 JP 2007507905A5 JP 2006534203 A JP2006534203 A JP 2006534203A JP 2006534203 A JP2006534203 A JP 2006534203A JP 2007507905 A5 JP2007507905 A5 JP 2007507905A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- schottky
- etching
- gate electrode
- lateral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims 21
- 238000000034 method Methods 0.000 claims 20
- 239000004065 semiconductor Substances 0.000 claims 20
- 238000005530 etching Methods 0.000 claims 18
- 239000012535 impurity Substances 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 2
- -1 palladium silicon compound Chemical class 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- DSJHYZNNAZPDNA-UHFFFAOYSA-N [Si][Ir] Chemical compound [Si][Ir] DSJHYZNNAZPDNA-UHFFFAOYSA-N 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910021339 platinum silicide Inorganic materials 0.000 claims 1
- 229910052761 rare earth metal Inorganic materials 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US50914203P | 2003-10-03 | 2003-10-03 | |
| PCT/US2004/032539 WO2005036631A1 (en) | 2003-10-03 | 2004-10-04 | Schottky-barrier mosfet manufacturing method using isotropic etch process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007507905A JP2007507905A (ja) | 2007-03-29 |
| JP2007507905A5 true JP2007507905A5 (https=) | 2007-11-22 |
Family
ID=34434946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006534203A Pending JP2007507905A (ja) | 2003-10-03 | 2004-10-04 | 等方性エッチングプロセスを使ったショットキーバリアｍｏｓｆｅｔ製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7291524B2 (https=) |
| EP (1) | EP1676305A1 (https=) |
| JP (1) | JP2007507905A (https=) |
| CN (1) | CN1868045A (https=) |
| RU (1) | RU2006114833A (https=) |
| WO (1) | WO2005036631A1 (https=) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6303479B1 (en) * | 1999-12-16 | 2001-10-16 | Spinnaker Semiconductor, Inc. | Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts |
| US7393733B2 (en) | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
| KR100560432B1 (ko) * | 2004-12-21 | 2006-03-13 | 한국전자통신연구원 | Ｎ형 쇼트키 장벽 관통 트랜지스터 소자 및 제조 방법 |
| US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| US8324660B2 (en) | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| CN101199043B (zh) * | 2005-06-24 | 2010-05-19 | 三菱瓦斯化学株式会社 | 腐蚀剂组合物及使用该组合物的半导体装置的制备方法 |
| WO2007101120A1 (en) * | 2006-02-23 | 2007-09-07 | Acorn Technologies, Inc. | Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source (s) and/or drain (s) |
| US7777250B2 (en) | 2006-03-24 | 2010-08-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures and related methods for device fabrication |
| US8173551B2 (en) | 2006-09-07 | 2012-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Defect reduction using aspect ratio trapping |
| US7875958B2 (en) | 2006-09-27 | 2011-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures |
| US7799592B2 (en) | 2006-09-27 | 2010-09-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tri-gate field-effect transistors formed by aspect ratio trapping |
| US20080187018A1 (en) | 2006-10-19 | 2008-08-07 | Amberwave Systems Corporation | Distributed feedback lasers formed via aspect ratio trapping |
| US8237151B2 (en) | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
| US8304805B2 (en) | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
| US7825328B2 (en) | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
| US9508890B2 (en) | 2007-04-09 | 2016-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photovoltaics on silicon |
| US7553717B2 (en) * | 2007-05-11 | 2009-06-30 | Texas Instruments Incorporated | Recess etch for epitaxial SiGe |
| US8329541B2 (en) | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
| WO2009035746A2 (en) | 2007-09-07 | 2009-03-19 | Amberwave Systems Corporation | Multi-junction solar cells |
| US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
| US8274097B2 (en) | 2008-07-01 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of edge effects from aspect ratio trapping |
| US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
| US20100072515A1 (en) | 2008-09-19 | 2010-03-25 | Amberwave Systems Corporation | Fabrication and structures of crystalline material |
| WO2010033813A2 (en) | 2008-09-19 | 2010-03-25 | Amberwave System Corporation | Formation of devices by epitaxial layer overgrowth |
| US8253211B2 (en) | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
| SG171987A1 (en) | 2009-04-02 | 2011-07-28 | Taiwan Semiconductor Mfg | Devices formed from a non-polar plane of a crystalline material and method of making the same |
| US8513765B2 (en) | 2010-07-19 | 2013-08-20 | International Business Machines Corporation | Formation method and structure for a well-controlled metallic source/drain semiconductor device |
| US9691898B2 (en) * | 2013-12-19 | 2017-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Germanium profile for channel strain |
| CN103745929A (zh) * | 2013-12-24 | 2014-04-23 | 上海新傲科技股份有限公司 | 肖特基势垒mosfet的制备方法 |
| JP6697909B2 (ja) * | 2016-03-15 | 2020-05-27 | エイブリック株式会社 | 半導体装置とその製造方法 |
| US10249542B2 (en) * | 2017-01-12 | 2019-04-02 | International Business Machines Corporation | Self-aligned doping in source/drain regions for low contact resistance |
| RU2688861C1 (ru) * | 2018-03-12 | 2019-05-22 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) | Способ изготовления полупроводникового прибора |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61237470A (ja) * | 1985-04-15 | 1986-10-22 | Hitachi Ltd | 半導体装置 |
| US5834793A (en) * | 1985-12-27 | 1998-11-10 | Kabushiki Kaisha Toshiba | Semiconductor devices |
| JP3761918B2 (ja) * | 1994-09-13 | 2006-03-29 | 株式会社東芝 | 半導体装置の製造方法 |
| US6303479B1 (en) * | 1999-12-16 | 2001-10-16 | Spinnaker Semiconductor, Inc. | Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts |
| US6949787B2 (en) | 2001-08-10 | 2005-09-27 | Spinnaker Semiconductor, Inc. | Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate |
| JP3833903B2 (ja) * | 2000-07-11 | 2006-10-18 | 株式会社東芝 | 半導体装置の製造方法 |
| CN100401528C (zh) | 2002-01-23 | 2008-07-09 | 斯平内克半导体股份有限公司 | 具有与应变半导体基片形成肖特基或肖特基类接触的源极和/或漏极的场效应晶体管 |
| US6974737B2 (en) | 2002-05-16 | 2005-12-13 | Spinnaker Semiconductor, Inc. | Schottky barrier CMOS fabrication method |
-
2004
- 2004-10-04 CN CNA200480028742XA patent/CN1868045A/zh active Pending
- 2004-10-04 EP EP04794042A patent/EP1676305A1/en not_active Withdrawn
- 2004-10-04 RU RU2006114833/28A patent/RU2006114833A/ru not_active Application Discontinuation
- 2004-10-04 US US10/957,913 patent/US7291524B2/en not_active Expired - Fee Related
- 2004-10-04 JP JP2006534203A patent/JP2007507905A/ja active Pending
- 2004-10-04 WO PCT/US2004/032539 patent/WO2005036631A1/en not_active Ceased
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