CN1868045A - 使用各向同性蚀刻工艺的肖特基势垒mosfet制造方法 - Google Patents

使用各向同性蚀刻工艺的肖特基势垒mosfet制造方法 Download PDF

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Publication number
CN1868045A
CN1868045A CNA200480028742XA CN200480028742A CN1868045A CN 1868045 A CN1868045 A CN 1868045A CN A200480028742X A CNA200480028742X A CN A200480028742XA CN 200480028742 A CN200480028742 A CN 200480028742A CN 1868045 A CN1868045 A CN 1868045A
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CN
China
Prior art keywords
semiconductor substrate
schottky
lateral
etching
vertical
Prior art date
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Pending
Application number
CNA200480028742XA
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English (en)
Chinese (zh)
Inventor
J·P·斯奈德
J·M·拉森
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Spinnaker Semiconductor Inc
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Spinnaker Semiconductor Inc
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Publication date
Application filed by Spinnaker Semiconductor Inc filed Critical Spinnaker Semiconductor Inc
Publication of CN1868045A publication Critical patent/CN1868045A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0277—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming conductor-insulator-semiconductor or Schottky barrier source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CNA200480028742XA 2003-10-03 2004-10-04 使用各向同性蚀刻工艺的肖特基势垒mosfet制造方法 Pending CN1868045A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50914203P 2003-10-03 2003-10-03
US60/509,142 2003-10-03

Publications (1)

Publication Number Publication Date
CN1868045A true CN1868045A (zh) 2006-11-22

Family

ID=34434946

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA200480028742XA Pending CN1868045A (zh) 2003-10-03 2004-10-04 使用各向同性蚀刻工艺的肖特基势垒mosfet制造方法

Country Status (6)

Country Link
US (1) US7291524B2 (https=)
EP (1) EP1676305A1 (https=)
JP (1) JP2007507905A (https=)
CN (1) CN1868045A (https=)
RU (1) RU2006114833A (https=)
WO (1) WO2005036631A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103745929A (zh) * 2013-12-24 2014-04-23 上海新傲科技股份有限公司 肖特基势垒mosfet的制备方法
CN107192968A (zh) * 2016-03-15 2017-09-22 精工半导体有限公司 半导体装置及其制造方法

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303479B1 (en) * 1999-12-16 2001-10-16 Spinnaker Semiconductor, Inc. Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts
US7393733B2 (en) 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
KR100560432B1 (ko) * 2004-12-21 2006-03-13 한국전자통신연구원 Ｎ형 쇼트키 장벽 관통 트랜지스터 소자 및 제조 방법
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
CN101199043B (zh) * 2005-06-24 2010-05-19 三菱瓦斯化学株式会社 腐蚀剂组合物及使用该组合物的半导体装置的制备方法
WO2007101120A1 (en) * 2006-02-23 2007-09-07 Acorn Technologies, Inc. Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source (s) and/or drain (s)
US7777250B2 (en) 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
US8173551B2 (en) 2006-09-07 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Defect reduction using aspect ratio trapping
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
US7799592B2 (en) 2006-09-27 2010-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Tri-gate field-effect transistors formed by aspect ratio trapping
US20080187018A1 (en) 2006-10-19 2008-08-07 Amberwave Systems Corporation Distributed feedback lasers formed via aspect ratio trapping
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US7553717B2 (en) * 2007-05-11 2009-06-30 Texas Instruments Incorporated Recess etch for epitaxial SiGe
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
WO2009035746A2 (en) 2007-09-07 2009-03-19 Amberwave Systems Corporation Multi-junction solar cells
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
WO2010033813A2 (en) 2008-09-19 2010-03-25 Amberwave System Corporation Formation of devices by epitaxial layer overgrowth
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
SG171987A1 (en) 2009-04-02 2011-07-28 Taiwan Semiconductor Mfg Devices formed from a non-polar plane of a crystalline material and method of making the same
US8513765B2 (en) 2010-07-19 2013-08-20 International Business Machines Corporation Formation method and structure for a well-controlled metallic source/drain semiconductor device
US9691898B2 (en) * 2013-12-19 2017-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium profile for channel strain
US10249542B2 (en) * 2017-01-12 2019-04-02 International Business Machines Corporation Self-aligned doping in source/drain regions for low contact resistance
RU2688861C1 (ru) * 2018-03-12 2019-05-22 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводникового прибора

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61237470A (ja) * 1985-04-15 1986-10-22 Hitachi Ltd 半導体装置
US5834793A (en) * 1985-12-27 1998-11-10 Kabushiki Kaisha Toshiba Semiconductor devices
JP3761918B2 (ja) * 1994-09-13 2006-03-29 株式会社東芝 半導体装置の製造方法
US6303479B1 (en) * 1999-12-16 2001-10-16 Spinnaker Semiconductor, Inc. Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts
US6949787B2 (en) 2001-08-10 2005-09-27 Spinnaker Semiconductor, Inc. Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate
JP3833903B2 (ja) * 2000-07-11 2006-10-18 株式会社東芝 半導体装置の製造方法
CN100401528C (zh) 2002-01-23 2008-07-09 斯平内克半导体股份有限公司 具有与应变半导体基片形成肖特基或肖特基类接触的源极和/或漏极的场效应晶体管
US6974737B2 (en) 2002-05-16 2005-12-13 Spinnaker Semiconductor, Inc. Schottky barrier CMOS fabrication method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103745929A (zh) * 2013-12-24 2014-04-23 上海新傲科技股份有限公司 肖特基势垒mosfet的制备方法
CN107192968A (zh) * 2016-03-15 2017-09-22 精工半导体有限公司 半导体装置及其制造方法

Also Published As

Publication number Publication date
EP1676305A1 (en) 2006-07-05
US20050118793A1 (en) 2005-06-02
WO2005036631A1 (en) 2005-04-21
JP2007507905A (ja) 2007-03-29
US7291524B2 (en) 2007-11-06
RU2006114833A (ru) 2007-11-10

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