JP2007507893A5 - - Google Patents

Download PDF

Info

Publication number
JP2007507893A5
JP2007507893A5 JP2006533923A JP2006533923A JP2007507893A5 JP 2007507893 A5 JP2007507893 A5 JP 2007507893A5 JP 2006533923 A JP2006533923 A JP 2006533923A JP 2006533923 A JP2006533923 A JP 2006533923A JP 2007507893 A5 JP2007507893 A5 JP 2007507893A5
Authority
JP
Japan
Prior art keywords
insulated gate
source regions
gate
gate structure
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006533923A
Other languages
English (en)
Japanese (ja)
Other versions
JP5179755B2 (ja
JP2007507893A (ja
Filing date
Publication date
Priority claimed from US10/678,769 external-priority patent/US6949961B2/en
Application filed filed Critical
Publication of JP2007507893A publication Critical patent/JP2007507893A/ja
Publication of JP2007507893A5 publication Critical patent/JP2007507893A5/ja
Application granted granted Critical
Publication of JP5179755B2 publication Critical patent/JP5179755B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2006533923A 2003-10-06 2004-09-15 パワー・スイッチの構造および方法 Expired - Lifetime JP5179755B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/678,769 2003-10-06
US10/678,769 US6949961B2 (en) 2003-10-06 2003-10-06 Power switch structure with low RDSon and low current limit
PCT/US2004/030143 WO2005041380A1 (en) 2003-10-06 2004-09-15 Power switch structure and method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011035579A Division JP5296119B2 (ja) 2003-10-06 2011-02-22 パワー・スイッチの構造および方法

Publications (3)

Publication Number Publication Date
JP2007507893A JP2007507893A (ja) 2007-03-29
JP2007507893A5 true JP2007507893A5 (https=) 2007-08-16
JP5179755B2 JP5179755B2 (ja) 2013-04-10

Family

ID=34394009

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006533923A Expired - Lifetime JP5179755B2 (ja) 2003-10-06 2004-09-15 パワー・スイッチの構造および方法
JP2011035579A Expired - Fee Related JP5296119B2 (ja) 2003-10-06 2011-02-22 パワー・スイッチの構造および方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011035579A Expired - Fee Related JP5296119B2 (ja) 2003-10-06 2011-02-22 パワー・スイッチの構造および方法

Country Status (7)

Country Link
US (2) US6949961B2 (https=)
EP (1) EP1671408B1 (https=)
JP (2) JP5179755B2 (https=)
KR (1) KR101099384B1 (https=)
CN (1) CN100557916C (https=)
TW (1) TWI368989B (https=)
WO (1) WO2005041380A1 (https=)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8253197B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US7230302B2 (en) * 2004-01-29 2007-06-12 Enpirion, Inc. Laterally diffused metal oxide semiconductor device and method of forming the same
US8253196B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212317B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8253195B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212315B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212316B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US7414335B2 (en) * 2004-04-15 2008-08-19 Seagate Technology Inrush current controller
US7229886B2 (en) * 2004-08-23 2007-06-12 Enpirion, Inc. Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein
US7195981B2 (en) 2004-08-23 2007-03-27 Enpirion, Inc. Method of forming an integrated circuit employable with a power converter
US7015544B2 (en) * 2004-08-23 2006-03-21 Enpirion, Inc. Intergrated circuit employable with a power converter
US7190026B2 (en) * 2004-08-23 2007-03-13 Enpirion, Inc. Integrated circuit employable with a power converter
US7186606B2 (en) 2004-08-23 2007-03-06 Enpirion, Inc. Method of forming an integrated circuit employable with a power converter
US7214985B2 (en) * 2004-08-23 2007-05-08 Enpirion, Inc. Integrated circuit incorporating higher voltage devices and low voltage devices therein
US7335948B2 (en) * 2004-08-23 2008-02-26 Enpirion, Inc. Integrated circuit incorporating higher voltage devices and low voltage devices therein
US7232733B2 (en) * 2004-08-23 2007-06-19 Enpirion, Inc. Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein
JP4203464B2 (ja) * 2004-11-18 2009-01-07 パナソニック株式会社 Ｄｃ−ｄｃコンバータ
US7609499B2 (en) * 2005-05-05 2009-10-27 Seagate Technology Llc Active current limiting circuit
US7332358B2 (en) * 2005-06-30 2008-02-19 Potentia Semiconductor Inc. MOSFET temperature sensing
US20070126872A1 (en) * 2005-12-06 2007-06-07 Michael Bolotine Modular surveillance camera system
US20070126871A1 (en) * 2005-12-06 2007-06-07 Henninger Paul E Iii Modular surveillance camera system with self-identification capability
GB2455524B (en) * 2007-12-11 2010-04-07 Wolfson Microelectronics Plc Charge pump circuit and methods of operation thereof and portable audio apparatus including charge pump circuits
GB2467450B (en) * 2007-12-11 2011-07-20 Wolfson Microelectronics Plc Drive circuit
US7760479B2 (en) * 2008-04-09 2010-07-20 Fairchild Semiconductor Corporation Technique for combining in-rush current limiting and short circuit current limiting
US7683693B2 (en) * 2008-04-10 2010-03-23 Fairchild Semiconductor Corporation Hot swap controller with zero loaded charge pump
US8050001B2 (en) * 2008-08-07 2011-11-01 Crucs Holdings, Llc Timed electrical outlet and a method of operation thereof
US8174148B2 (en) * 2008-08-07 2012-05-08 Crucs Holdings, Llc Controllable electrical outlet and a method of operation thereof
US8138933B2 (en) * 2008-11-05 2012-03-20 Crucs Holdings, Llc Systems, methods, and apparatus for automatically disabling appliances in response to a smoke detector
CA2776241A1 (en) 2009-10-30 2011-05-05 Novozymes Biopharma Dk A/S Albumin variants
CN102570809B (zh) * 2010-12-31 2016-02-24 意法半导体研发(深圳)有限公司 短路保护电路及方法
TWI492277B (zh) * 2011-04-11 2015-07-11 Great Power Semiconductor Corp 具有快速切換能力之溝渠式功率金氧半導體結構之製造方法
CN103166168B (zh) * 2011-12-19 2016-11-02 上海航空电器有限公司 一种高压直流固态功率控制器
US8766365B2 (en) * 2012-02-21 2014-07-01 Micron Technology, Inc. Circuit-protection devices
JP5845108B2 (ja) 2012-02-23 2016-01-20 ルネサスエレクトロニクス株式会社 パワーデバイス
WO2013135896A1 (en) 2012-03-16 2013-09-19 Novozymes Biopharma Dk A/S Albumin variants
US20140159130A1 (en) 2012-11-30 2014-06-12 Enpirion, Inc. Apparatus including a semiconductor device coupled to a decoupling device
US9673192B1 (en) 2013-11-27 2017-06-06 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
US9536938B1 (en) 2013-11-27 2017-01-03 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
US10020739B2 (en) 2014-03-27 2018-07-10 Altera Corporation Integrated current replicator and method of operating the same
US10468917B2 (en) * 2014-03-05 2019-11-05 Ricoh Co., Ltd. Battery charger
EP3130049B1 (en) 2014-04-11 2021-07-28 Telefonaktiebolaget LM Ericsson (publ) A current control circuit and a method therefor
JP6504429B2 (ja) * 2014-12-08 2019-04-24 富士電機株式会社 スイッチング電源装置
US10103627B2 (en) 2015-02-26 2018-10-16 Altera Corporation Packaged integrated circuit including a switch-mode regulator and method of forming the same
US10103724B2 (en) * 2016-04-25 2018-10-16 Infineon Technologies Ag Dimension regulation of power device to eliminate hot spot generation
US10355132B2 (en) 2017-03-20 2019-07-16 North Carolina State University Power MOSFETs with superior high frequency figure-of-merit
US10361578B2 (en) * 2017-05-10 2019-07-23 Analog Devices, Inc. Techniques for controlling current during power up in hot swap controllers
CN109217831B (zh) * 2017-06-29 2022-05-10 爱思开海力士有限公司 具有分裂长度补偿方案的放大电路
EP3432455B1 (en) 2017-07-17 2022-11-09 The Swatch Group Research and Development Ltd Thermoelectric generator with starting circuit
US10163893B1 (en) 2017-08-28 2018-12-25 Micron Technologies, Inc. Apparatus containing circuit-protection devices
US10431577B2 (en) 2017-12-29 2019-10-01 Micron Technology, Inc. Methods of forming circuit-protection devices
US10903355B1 (en) 2019-11-27 2021-01-26 Analog Devices International Unlimited Company Power switch arrangement

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE448333B (sv) * 1982-02-18 1987-02-09 Ericsson Telefon Ab L M Elektronisk sekring ingaende i ett distributionssystem for likstrom
US5101313A (en) * 1989-11-22 1992-03-31 Tandem Computers Incorporated System for protecting a dc power distribution bus during hot servicing
JPH05267580A (ja) * 1992-03-24 1993-10-15 Fuji Electric Co Ltd 半導体装置
JP2750986B2 (ja) * 1992-10-27 1998-05-18 尚茂 玉蟲 分割ゲート型カソード短絡構造を有する絶縁ゲート静電誘導サイリスタ
JP2678159B2 (ja) * 1992-11-06 1997-11-17 尚茂 玉蟲 分割ゲート型カソード短絡構造を有する絶縁ゲート静電誘導サイリスタ
JP3243902B2 (ja) * 1993-09-17 2002-01-07 株式会社日立製作所 半導体装置
KR0136531B1 (ko) * 1994-07-08 1998-09-15 문정환 반도체장치의 제조방법
JPH0832064A (ja) * 1994-07-15 1996-02-02 Fuji Electric Co Ltd Ｍｏｓ半導体装置とその駆動方法および駆動回路
JP3149773B2 (ja) * 1996-03-18 2001-03-26 富士電機株式会社 電流制限回路を備えた絶縁ゲートバイポーラトランジスタ
JP3464340B2 (ja) * 1996-04-19 2003-11-10 沖電気工業株式会社 半導体集積回路装置
US5889303A (en) * 1997-04-07 1999-03-30 Motorola, Inc. Split-Control gate electrically erasable programmable read only memory (EEPROM) cell
JP3077631B2 (ja) * 1997-06-06 2000-08-14 日本電気株式会社 過熱保護機能付き電力駆動用ｍｏｓ型半導体素子
US5986941A (en) * 1997-10-09 1999-11-16 Bright Microelectronics, Inc. Programming current limiter for source-side injection EEPROM cells
US6043530A (en) * 1998-04-15 2000-03-28 Chang; Ming-Bing Flash EEPROM device employing polysilicon sidewall spacer as an erase gate
JP3413569B2 (ja) * 1998-09-16 2003-06-03 株式会社日立製作所 絶縁ゲート型半導体装置およびその製造方法
JP2000101076A (ja) * 1998-09-25 2000-04-07 Toshiba Corp 絶縁ゲート型半導体素子とその駆動方法
DE19922924A1 (de) * 1999-05-19 2000-11-30 Siemens Ag Überspannungsschutzvorrichtung für einen Halbleiterschalter
US6228718B1 (en) * 1999-12-21 2001-05-08 United Microelectronics Corp. Method of fabricating a self-aligned split gate of a flash memory
US6400203B1 (en) * 2000-08-07 2002-06-04 Maxim Integrated Products, Inc. Hot swap current limit circuits and methods
WO2002067279A2 (en) * 2000-12-22 2002-08-29 Ixys Corporation Hot-swap protection circuit
US6515463B2 (en) * 2001-04-05 2003-02-04 Semiconductor Components Industries Llc Method and circuit for optimizing efficiency in a high frequency switching DC-DC converter
US6744094B2 (en) * 2001-08-24 2004-06-01 Micron Technology Inc. Floating gate transistor with horizontal gate layers stacked next to vertical body
GB2384632B (en) * 2002-01-25 2005-11-16 Zetex Plc Current limiting protection circuit

Similar Documents

Publication Publication Date Title
JP2007507893A5 (https=)
JP2010027709A5 (https=)
JP2014522114A5 (https=)
JP2011119718A5 (ja) 半導体装置
WO2005114744A3 (en) Wide bandgap hemts with source connected field plates
JP2002319675A5 (https=)
JP2017505549A5 (https=)
WO2009036266A3 (en) Iii-nitride bidirectional switches
JP2013058770A5 (https=)
WO2005070009A3 (en) Enhancement mode iii-nitride fet
WO2007012490A3 (de) Halbleiterbauelement mit einer driftzone und einer driftsteuerzone
WO2007127523A3 (en) Charge storage structure formation in transistor with vertical channel region
JP2011120221A5 (ja) 半導体装置
ATE515802T1 (de) Lateraler leistungs-mosfet
JP2008511169A5 (https=)
JP2011029635A5 (ja) 半導体装置
WO2007057357A3 (en) Semiconductor devices having complementary multiple-gate transistors with different gate dielectrics and methods of manufacture thereof
TW200802802A (en) Closed cell configuration to increase channel density for sub-micron planar semiconductor power device
JP2007537593A5 (https=)
DE602007001155D1 (de) Piezoelektrischer Aktor
JP2017212425A5 (https=)
US8901648B2 (en) MOS device with low on-resistance
JP2012015502A5 (https=)
WO2011151681A3 (ja) 半導体装置およびこれを用いた半導体リレー
TW200711005A (en) Method of forming a semiconductor device having asymmetric dielectric regions and structure thereof