JP2007506547A5 - - Google Patents

Download PDF

Info

Publication number
JP2007506547A5
JP2007506547A5 JP2006528165A JP2006528165A JP2007506547A5 JP 2007506547 A5 JP2007506547 A5 JP 2007506547A5 JP 2006528165 A JP2006528165 A JP 2006528165A JP 2006528165 A JP2006528165 A JP 2006528165A JP 2007506547 A5 JP2007506547 A5 JP 2007506547A5
Authority
JP
Japan
Prior art keywords
active
fluorinated
layer
composition
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006528165A
Other languages
English (en)
Japanese (ja)
Other versions
JP5339678B2 (ja
JP2007506547A (ja
Filing date
Publication date
Priority claimed from US10/669,403 external-priority patent/US7686978B2/en
Application filed filed Critical
Publication of JP2007506547A publication Critical patent/JP2007506547A/ja
Publication of JP2007506547A5 publication Critical patent/JP2007506547A5/ja
Application granted granted Critical
Publication of JP5339678B2 publication Critical patent/JP5339678B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2006528165A 2003-09-24 2004-09-22 活性材料を活性表面上に塗布する方法およびかかる方法によって製造される装置 Expired - Fee Related JP5339678B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/669,403 2003-09-24
US10/669,403 US7686978B2 (en) 2003-09-24 2003-09-24 Method for the application of active materials onto active surfaces and devices made with such methods
PCT/US2004/031246 WO2005031889A2 (en) 2003-09-24 2004-09-22 Method for the application of active materials onto active surfaces and devices made with such methods

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012065874A Division JP5602173B2 (ja) 2003-09-24 2012-03-22 活性材料を活性表面上に塗布する方法およびかかる方法によって製造される装置

Publications (3)

Publication Number Publication Date
JP2007506547A JP2007506547A (ja) 2007-03-22
JP2007506547A5 true JP2007506547A5 (enExample) 2007-11-15
JP5339678B2 JP5339678B2 (ja) 2013-11-13

Family

ID=34313707

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2006528165A Expired - Fee Related JP5339678B2 (ja) 2003-09-24 2004-09-22 活性材料を活性表面上に塗布する方法およびかかる方法によって製造される装置
JP2012065874A Expired - Fee Related JP5602173B2 (ja) 2003-09-24 2012-03-22 活性材料を活性表面上に塗布する方法およびかかる方法によって製造される装置
JP2013265744A Expired - Lifetime JP5757989B2 (ja) 2003-09-24 2013-12-24 活性材料を活性表面上に塗布する方法によって製造される装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2012065874A Expired - Fee Related JP5602173B2 (ja) 2003-09-24 2012-03-22 活性材料を活性表面上に塗布する方法およびかかる方法によって製造される装置
JP2013265744A Expired - Lifetime JP5757989B2 (ja) 2003-09-24 2013-12-24 活性材料を活性表面上に塗布する方法によって製造される装置

Country Status (5)

Country Link
US (3) US7686978B2 (enExample)
JP (3) JP5339678B2 (enExample)
KR (1) KR101176678B1 (enExample)
TW (1) TW200525793A (enExample)
WO (1) WO2005031889A2 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7686978B2 (en) * 2003-09-24 2010-03-30 E. I. Du Pont De Nemours And Company Method for the application of active materials onto active surfaces and devices made with such methods
US7709050B2 (en) * 2004-08-02 2010-05-04 Hewlett-Packard Development Company, L.P. Surface treatment for OLED material
JP4876415B2 (ja) * 2005-03-29 2012-02-15 セイコーエプソン株式会社 有機el装置の製造方法、デバイスの製造方法
US8563331B2 (en) * 2005-06-03 2013-10-22 E. I. Du Pont De Nemours And Company Process for fabricating and repairing an electronic device
US20070170401A1 (en) * 2005-12-28 2007-07-26 Che-Hsiung Hsu Cationic compositions of electrically conducting polymers doped with fully-fluorinated acid polymers
DE102006021410B4 (de) * 2006-05-09 2009-07-16 Leonhard Kurz Gmbh & Co. Kg Verfahren zur Herstellung eines Mehrschichtgebildes und Verwendung des Verfahrens
WO2007145977A1 (en) * 2006-06-05 2007-12-21 E. I. Du Pont De Nemours And Company Process for making an organic electronic device
WO2007145976A2 (en) * 2006-06-05 2007-12-21 E. I. Du Pont De Nemours And Company Process for making an organic light-emitting diode
WO2007145978A1 (en) * 2006-06-05 2007-12-21 E. I. Du Pont De Nemours And Company Process for making contained layers and devices made with same
JP2009076779A (ja) * 2007-09-21 2009-04-09 Casio Comput Co Ltd 有機el素子およびその製造方法
KR20100094475A (ko) * 2007-10-26 2010-08-26 이 아이 듀폰 디 네모아 앤드 캄파니 격납된 층을 제조하기 위한 방법 및 재료, 및 이를 사용하여 제조된 소자
EP2109163A1 (de) * 2008-04-08 2009-10-14 Alcan Technology & Management Ltd. Substrat mit aufgedruckter Struktur
US8759818B2 (en) 2009-02-27 2014-06-24 E I Du Pont De Nemours And Company Deuterated compounds for electronic applications
TW201104357A (en) * 2009-07-27 2011-02-01 Du Pont Process and materials for making contained layers and devices made with same
TW201111326A (en) 2009-09-29 2011-04-01 Du Pont Deuterated compounds for luminescent applications
WO2011059463A1 (en) 2009-10-29 2011-05-19 E. I. Du Pont De Nemours And Company Deuterated compounds for electronic applications
FR2965089B1 (fr) * 2010-09-20 2016-04-29 Philippe Foucqueteau Dispositif pour simuler un geste medical
KR101547410B1 (ko) 2010-12-20 2015-08-25 이 아이 듀폰 디 네모아 앤드 캄파니 전자적 응용을 위한 조성물
JP2012212704A (ja) * 2011-03-30 2012-11-01 Sumitomo Chemical Co Ltd 液状組成物及びそれを用いた積層膜の製造方法
BR112015020725A2 (pt) 2013-03-11 2017-07-18 Saudi Basic Ind Corp ariloxi-ftalocianinas de metais do grupo iv
JP6014779B2 (ja) 2013-03-11 2016-10-25 サウジ ベイシック インダストリーズ コーポレイション Iii族金属のアリールオキシ−フタロシアニン
US10141183B2 (en) 2016-01-28 2018-11-27 Tokyo Electron Limited Methods of spin-on deposition of metal oxides
US20220025240A1 (en) * 2018-12-20 2022-01-27 Solvay Specialty Polymers Italy S.P.A. Method of manufacturing semiconductor devices using a heat transfer fluid comprising fluorinated compounds having a low gwp

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2994664A (en) * 1958-02-19 1961-08-01 Nalco Chemical Co Dry acid cleaning compositions
US2947703A (en) * 1958-07-16 1960-08-02 Nalco Chemical Co Process of inhibiting corrosion of ferrous metals in contact with aqueous solutions of acids
US3282875A (en) * 1964-07-22 1966-11-01 Du Pont Fluorocarbon vinyl ether polymers
US3343976A (en) * 1964-05-07 1967-09-26 North American Aviation Inc Surface preparation for fluorinated plastics
US3438907A (en) * 1965-07-26 1969-04-15 Wyandotte Chemicals Corp Iodine-containing nonionic surfactant compositions
DE2029556A1 (de) 1970-06-16 1971-12-23 Farbwerke Hoechst AG, vormals Meister Lucius & Brumng, 6000 Frankfurt Verfahren zur Herstellung von Aryl 1,1,2,2 tetrafluorathylathern
US3783499A (en) * 1972-01-24 1974-01-08 Bell Telephone Labor Inc Semiconductor device fabrication using magnetic carrier
US4358545A (en) * 1980-06-11 1982-11-09 The Dow Chemical Company Sulfonic acid electrolytic cell having flourinated polymer membrane with hydration product less than 22,000
US4470920A (en) * 1981-05-11 1984-09-11 Custom Research And Development Metal oxide remover for stainless steels
US4802967A (en) 1987-04-08 1989-02-07 Andus Corporation Surface treatment of polymers
DE3714043A1 (de) * 1987-04-28 1988-11-17 Merck Patent Gmbh Elektrooptisches fluessigkristallanzeigeelement
US4940525A (en) * 1987-05-08 1990-07-10 The Dow Chemical Company Low equivalent weight sulfonic fluoropolymers
US4973391A (en) * 1988-08-30 1990-11-27 Osaka Gas Company, Ltd. Composite polymers of polyaniline with metal phthalocyanine and polyaniline with organic sulfonic acid and nafion
GB8909011D0 (en) * 1989-04-20 1989-06-07 Friend Richard H Electroluminescent devices
US5271867A (en) * 1989-08-23 1993-12-21 Sharp Kabushiki Kaisha Liquid crystal composition and liquid crystal device containing the same
US5098618A (en) * 1990-03-14 1992-03-24 Joseph Zelez Surface modification of plastic substrates
US5179188A (en) * 1990-04-17 1993-01-12 Raychem Corporation Crosslinkable fluorinated aromatic ether composition
US5730922A (en) * 1990-12-10 1998-03-24 The Dow Chemical Company Resin transfer molding process for composites
DE4221152C1 (de) * 1992-06-27 1993-11-18 Merck Patent Gmbh Verfahren zur Herstellung von 4-Brom-2,6-difluortrifluormethoxybenzol und 2,6-Difluor-3-nitrotrifluormethoxybenzol
JPH06293691A (ja) * 1993-02-12 1994-10-21 Kanto Denka Kogyo Co Ltd 高度弗素化フェニルプロピルエーテル及びその製造法
US5431850A (en) * 1993-08-09 1995-07-11 Merck Patent Gensellschaft Mit Beschrankter Haftung Nematic liquid-crystal composition for active matrix application
US5380644A (en) 1993-08-10 1995-01-10 Minnesota Mining And Manufacturing Company Additive for the reduction of mottle in photothermographic and thermographic elements
JP2846571B2 (ja) * 1994-02-25 1999-01-13 出光興産株式会社 有機エレクトロルミネッセンス素子
KR20000011139A (ko) * 1996-05-15 2000-02-25 후루타 다케시 경화성 조성물 및 이를 이용한 발포체와 그 제조방법
US6046348A (en) * 1996-07-17 2000-04-04 Fuji Xerox Co., Ltd. Silane compound, method for making the same, and electrophotographic photoreceptor
DE69835366T2 (de) 1997-03-31 2007-07-19 Daikin Industries, Ltd. Verfahren zur herstellung von perfluorvinylethersulfonsäure-derivaten
DE69939514D1 (de) * 1998-03-17 2008-10-23 Seiko Epson Corp Verfahren zur herstellung einer strukturierten dünnschichtvorrichtung
JP3743630B2 (ja) * 1998-03-17 2006-02-08 セイコーエプソン株式会社 薄膜発光素子の製造方法
EP1666561A1 (en) * 1998-12-28 2006-06-07 Idemitsu Kosan Company Limited Organic electroluminescent element
JP2001081394A (ja) * 1999-09-14 2001-03-27 Titan Kogyo Kk プライマー組成物及び光触媒体
CN1245769C (zh) * 1999-12-21 2006-03-15 造型逻辑有限公司 溶液加工
US6821645B2 (en) * 1999-12-27 2004-11-23 Fuji Photo Film Co., Ltd. Light-emitting material comprising orthometalated iridium complex, light-emitting device, high efficiency red light-emitting device, and novel iridium complex
US6955772B2 (en) * 2001-03-29 2005-10-18 Agfa-Gevaert Aqueous composition containing a polymer or copolymer of a 3,4-dialkoxythiophene and a non-newtonian binder
US20020121638A1 (en) 2000-06-30 2002-09-05 Vladimir Grushin Electroluminescent iridium compounds with fluorinated phenylpyridines, phenylpyrimidines, and phenylquinolines and devices made with such compounds
JP5241053B2 (ja) 2000-08-11 2013-07-17 ザ、トラスティーズ オブ プリンストン ユニバーシティ 有機金属化合物及び放射移行有機電気燐光体
JP4154140B2 (ja) 2000-09-26 2008-09-24 キヤノン株式会社 金属配位化合物
JP4154139B2 (ja) 2000-09-26 2008-09-24 キヤノン株式会社 発光素子
US6994893B2 (en) * 2001-03-10 2006-02-07 Covion Organic Semiconductors Gmbh Solutions and dispersions of organic semiconductors
JP2002280177A (ja) * 2001-03-15 2002-09-27 Toshiba Corp 有機el素子および表示装置
JP2003080694A (ja) * 2001-06-26 2003-03-19 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体
JP2003041192A (ja) * 2001-07-27 2003-02-13 Dainippon Toryo Co Ltd 転写方法及び転写用被覆剤
DE10141624A1 (de) * 2001-08-24 2003-03-06 Covion Organic Semiconductors Lösungen polymerer Halbleiter
US6652661B2 (en) * 2001-10-12 2003-11-25 Bobolink, Inc. Radioactive decontamination and translocation method
US6955773B2 (en) 2002-02-28 2005-10-18 E.I. Du Pont De Nemours And Company Polymer buffer layers and their use in light-emitting diodes
CN1681869B (zh) * 2002-09-24 2010-05-26 E.I.内穆尔杜邦公司 用于电子器件用聚合物酸胶体制成的可水分散的聚苯胺
WO2004029128A2 (en) * 2002-09-24 2004-04-08 E.I. Du Pont De Nemours And Company Water dispersible polythiophenes made with polymeric acid colloids
US6916902B2 (en) 2002-12-19 2005-07-12 Dow Global Technologies Inc. Tricyclic arylamine containing polymers and electronic devices therefrom
US7390438B2 (en) * 2003-04-22 2008-06-24 E.I. Du Pont De Nemours And Company Water dispersible substituted polydioxythiophenes made with fluorinated polymeric sulfonic acid colloids
US7686978B2 (en) * 2003-09-24 2010-03-30 E. I. Du Pont De Nemours And Company Method for the application of active materials onto active surfaces and devices made with such methods
US7531700B2 (en) * 2003-09-24 2009-05-12 E.I. Du Pont De Nemours And Company Fluorinated arylethers and methods for use thereof

Similar Documents

Publication Publication Date Title
JP2007506547A5 (enExample)
Minaye Hashemi et al. Self-correcting process for high quality patterning by atomic layer deposition
WO2005031889A3 (en) Method for the application of active materials onto active surfaces and devices made with such methods
Hashemi et al. A new resist for area selective atomic and molecular layer deposition on metal–dielectric patterns
FR2963342B1 (fr) Procede d'obtention d'un materiau comprenant un substrat muni d'un revetement
JP2005041880A5 (enExample)
JP2007511044A5 (enExample)
JP2008293963A5 (enExample)
TW200642125A (en) Method of manufacturing organic electroluminescent device and method of manufacturing device
JP2005536053A5 (enExample)
TWI263676B (en) Compositions for chemically treating a substrate using foam technology
JP2008042208A5 (enExample)
WO2003092041A3 (en) Method for fabricating a soi substrate a high resistivity support substrate
EP3373337B1 (en) Method for producing a carbon nanotube semiconductor device
WO2005121397A3 (en) Controlled vapor deposition of multilayered coatings adhered by an oxide layer
JP2003523624A5 (enExample)
WO2004113585A3 (en) Atomic layer deposition of barrier materials
JP2011505589A5 (enExample)
JP2007096055A5 (enExample)
TW200605395A (en) Method of fabricating an optoelectronic device having a bulk heterojunction
WO2010043716A3 (fr) Procede de croissance controlee de film de graphene
JP2003021827A5 (enExample)
WO2011159876A3 (en) Process and materials for making contained layers and devices made with same
FR2874007B1 (fr) Procede de fabrication d'un substrat revetu d'une couche mesoporeuse et son application en optique
TW200729394A (en) A method of forming a layer over a surface of a first material embedded in a second material in a structure for a semiconductor device