JP2007504682A - 高Ａｌ含量ＡｌＧａＮ拡散バリアを有するＩＩＩ族窒化物電子素子構造 - Google Patents

高Ａｌ含量ＡｌＧａＮ拡散バリアを有するＩＩＩ族窒化物電子素子構造 Download PDF

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Publication number
JP2007504682A
JP2007504682A JP2006532828A JP2006532828A JP2007504682A JP 2007504682 A JP2007504682 A JP 2007504682A JP 2006532828 A JP2006532828 A JP 2006532828A JP 2006532828 A JP2006532828 A JP 2006532828A JP 2007504682 A JP2007504682 A JP 2007504682A
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Japan
Prior art keywords
layer
active region
doped
group iii
nitride
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JP2006532828A
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English (en)
Japanese (ja)
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JP2007504682A5 (enExample
Inventor
フリン，ジェフリー，エス．
シン，フオピン
ブランデス，ジョージ
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Wolfspeed Inc
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Cree Inc
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Application filed by Cree Inc filed Critical Cree Inc
Publication of JP2007504682A publication Critical patent/JP2007504682A/ja
Publication of JP2007504682A5 publication Critical patent/JP2007504682A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies

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  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Luminescent Compositions (AREA)
JP2006532828A 2003-05-09 2004-05-06 高Ａｌ含量ＡｌＧａＮ拡散バリアを有するＩＩＩ族窒化物電子素子構造 Pending JP2007504682A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US46931603P 2003-05-09 2003-05-09
PCT/US2004/014171 WO2004102153A2 (en) 2003-05-09 2004-05-06 III-NITRIDE ELECTRONIC DEVICE STRUCTURE WITH HIGH-A1 A1GaN DIFFUSION BARRIER

Publications (2)

Publication Number Publication Date
JP2007504682A true JP2007504682A (ja) 2007-03-01
JP2007504682A5 JP2007504682A5 (enExample) 2007-04-12

Family

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JP2006532828A Pending JP2007504682A (ja) 2003-05-09 2004-05-06 高Ａｌ含量ＡｌＧａＮ拡散バリアを有するＩＩＩ族窒化物電子素子構造

Country Status (4)

Country Link
US (1) US7282744B2 (enExample)
JP (1) JP2007504682A (enExample)
TW (1) TWI244223B (enExample)
WO (1) WO2004102153A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008117788A1 (ja) * 2007-03-26 2008-10-02 Ngk Insulators, Ltd. 発光素子
JP2012015154A (ja) * 2010-06-29 2012-01-19 Ngk Insulators Ltd 半導体発光素子および半導体発光素子の製造方法
JP2014199953A (ja) * 2014-07-28 2014-10-23 日本碍子株式会社 半導体発光素子および半導体発光素子の製造方法
US11658261B2 (en) 2019-12-20 2023-05-23 Nichia Corporation Method of manufacturing nitride semiconductor device

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JP2007005764A (ja) * 2005-05-27 2007-01-11 Toyota Motor Corp 半導体装置とその製造方法
US20060289891A1 (en) * 2005-06-28 2006-12-28 Hutchins Edward L Electronic and/or optoelectronic devices grown on free-standing GaN substrates with GaN spacer structures
DE102005035722B9 (de) * 2005-07-29 2021-11-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE102005048196B4 (de) * 2005-07-29 2023-01-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip
JP2007095823A (ja) * 2005-09-27 2007-04-12 Toyota Central Res & Dev Lab Inc 半導体装置と半導体装置製造方法
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
JP2007227621A (ja) * 2006-02-23 2007-09-06 Toyota Central Res & Dev Lab Inc 絶縁ゲート構造体を有する半導体装置とその製造方法
KR100818269B1 (ko) * 2006-06-23 2008-04-01 삼성전자주식회사 질화물 반도체 발광소자
KR20090064474A (ko) 2006-10-02 2009-06-18 일루미텍스, 인크. Ｌｅｄ 시스템 및 방법
JP2011512037A (ja) 2008-02-08 2011-04-14 イルミテックス， インコーポレイテッド エミッタ層成形のためのシステムおよび方法
US7902545B2 (en) * 2008-05-14 2011-03-08 Baker Hughes Incorporated Semiconductor for use in harsh environments
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
JP5782033B2 (ja) * 2010-07-29 2015-09-24 日本碍子株式会社 半導体素子用エピタキシャル基板、半導体素子、ｐｎ接合ダイオード素子、および半導体素子用エピタキシャル基板の製造方法
TWI486254B (zh) * 2010-09-20 2015-06-01 Nitto Denko Corp 發光陶瓷層板及其製造方法
TWI449224B (zh) * 2011-02-25 2014-08-11 Univ Nat Chiao Tung 半導體發光元件
US8354689B2 (en) * 2011-04-28 2013-01-15 Palo Alto Research Center Incorporated Light emitting devices having dopant front loaded tunnel barrier layers
CN103824910A (zh) * 2014-03-12 2014-05-28 合肥彩虹蓝光科技有限公司 一种提高ⅲ－ⅴ族化合物半导体led芯片抗静电能力的外延生长方法
CN103872204B (zh) * 2014-03-12 2017-01-04 合肥彩虹蓝光科技有限公司 一种具有循环结构的p型插入层及生长方法
CN103824908B (zh) * 2014-03-12 2016-09-14 合肥彩虹蓝光科技有限公司 一种提高GaN基LED静电耐受能力的外延生长方法
CN103887378B (zh) * 2014-03-28 2017-05-24 西安神光皓瑞光电科技有限公司 一种高光效紫外led的外延生长方法
JP6737800B2 (ja) * 2015-11-02 2020-08-12 日本碍子株式会社 半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の製造方法
US11056434B2 (en) * 2017-01-26 2021-07-06 Epistar Corporation Semiconductor device having specified p-type dopant concentration profile
CN107221585A (zh) * 2017-05-17 2017-09-29 聚灿光电科技股份有限公司 Led外延结构及其制备方法
CN108110109B (zh) * 2017-12-29 2019-12-06 安徽三安光电有限公司 一种发光二极管
US11552217B2 (en) * 2018-11-12 2023-01-10 Epistar Corporation Semiconductor device
CN109860360B (zh) * 2018-11-29 2020-08-18 华灿光电（浙江）有限公司 一种氮化镓基发光二极管外延片及其制备方法
US12051769B2 (en) 2021-10-13 2024-07-30 Creeled, Inc. Integrated warning structures for energized ultraviolet light-emitting diode packages

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US4614961A (en) 1984-10-09 1986-09-30 Honeywell Inc. Tunable cut-off UV detector based on the aluminum gallium nitride material system
JPH10321042A (ja) * 1997-05-21 1998-12-04 Tonen Chem Corp 非プロトン性電解質薄膜およびその製造方法
EP1928034A3 (en) 1997-12-15 2008-06-18 Philips Lumileds Lighting Company LLC Light emitting device
US6153894A (en) * 1998-11-12 2000-11-28 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting device
US6218293B1 (en) * 1998-11-13 2001-04-17 Micron Technology, Inc. Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride
US6222207B1 (en) 1999-05-24 2001-04-24 Lumileds Lighting, U.S. Llc Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
KR100348269B1 (ko) 2000-03-22 2002-08-09 엘지전자 주식회사 루데니움 산화물을 이용한 쇼트키 콘택 방법
US6800876B2 (en) * 2001-01-16 2004-10-05 Cree, Inc. Group III nitride LED with undoped cladding layer (5000.137)
US6511876B2 (en) * 2001-06-25 2003-01-28 International Business Machines Corporation High mobility FETS using A1203 as a gate oxide

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008117788A1 (ja) * 2007-03-26 2008-10-02 Ngk Insulators, Ltd. 発光素子
JPWO2008117788A1 (ja) * 2007-03-26 2010-07-15 日本碍子株式会社 発光素子
JP2012015154A (ja) * 2010-06-29 2012-01-19 Ngk Insulators Ltd 半導体発光素子および半導体発光素子の製造方法
JP2014199953A (ja) * 2014-07-28 2014-10-23 日本碍子株式会社 半導体発光素子および半導体発光素子の製造方法
US11658261B2 (en) 2019-12-20 2023-05-23 Nichia Corporation Method of manufacturing nitride semiconductor device

Also Published As

Publication number Publication date
WO2004102153A3 (en) 2005-04-14
TW200425549A (en) 2004-11-16
US20040222431A1 (en) 2004-11-11
WO2004102153A2 (en) 2004-11-25
US7282744B2 (en) 2007-10-16
TWI244223B (en) 2005-11-21

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