TWI244223B - III-nitride optoelectronic device structure with high al AlGaN diffusion barrier - Google Patents
III-nitride optoelectronic device structure with high al AlGaN diffusion barrier Download PDFInfo
- Publication number
- TWI244223B TWI244223B TW093112874A TW93112874A TWI244223B TW I244223 B TWI244223 B TW I244223B TW 093112874 A TW093112874 A TW 093112874A TW 93112874 A TW93112874 A TW 93112874A TW I244223 B TWI244223 B TW I244223B
- Authority
- TW
- Taiwan
- Prior art keywords
- group iii
- iii nitride
- layer
- doped
- item
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 90
- 238000009792 diffusion process Methods 0.000 title claims abstract description 49
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 30
- 229910002704 AlGaN Inorganic materials 0.000 title description 4
- 239000002019 doping agent Substances 0.000 claims abstract description 68
- 239000000463 material Substances 0.000 claims abstract description 65
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000011777 magnesium Substances 0.000 claims abstract description 32
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 31
- 238000013508 migration Methods 0.000 claims abstract description 16
- 230000005012 migration Effects 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 150000004767 nitrides Chemical class 0.000 claims description 88
- 238000000034 method Methods 0.000 claims description 43
- 229910052782 aluminium Inorganic materials 0.000 claims description 39
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 35
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 31
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 27
- 229910002601 GaN Inorganic materials 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 22
- 239000013589 supplement Substances 0.000 claims description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims description 20
- 238000004377 microelectronic Methods 0.000 claims description 15
- 230000005641 tunneling Effects 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 238000013461 design Methods 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 238000003780 insertion Methods 0.000 claims description 4
- 230000037431 insertion Effects 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 230000002401 inhibitory effect Effects 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 125000005842 heteroatom Chemical group 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 230000004907 flux Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 133
- 238000004519 manufacturing process Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000009830 intercalation Methods 0.000 description 2
- 230000002687 intercalation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- -1 carbide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- QGZKDVFQNNGYKY-NJFSPNSNSA-N nitrogen-16 Chemical compound [16NH3] QGZKDVFQNNGYKY-NJFSPNSNSA-N 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
Landscapes
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46931603P | 2003-05-09 | 2003-05-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200425549A TW200425549A (en) | 2004-11-16 |
| TWI244223B true TWI244223B (en) | 2005-11-21 |
Family
ID=33452273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093112874A TWI244223B (en) | 2003-05-09 | 2004-05-07 | III-nitride optoelectronic device structure with high al AlGaN diffusion barrier |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7282744B2 (enExample) |
| JP (1) | JP2007504682A (enExample) |
| TW (1) | TWI244223B (enExample) |
| WO (1) | WO2004102153A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103003931A (zh) * | 2010-07-29 | 2013-03-27 | 日本碍子株式会社 | 半导体元件用外延基板、半导体元件、pn接合二极管元件以及半导体元件用外延基板的制造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2007005764A (ja) * | 2005-05-27 | 2007-01-11 | Toyota Motor Corp | 半導体装置とその製造方法 |
| US20060289891A1 (en) * | 2005-06-28 | 2006-12-28 | Hutchins Edward L | Electronic and/or optoelectronic devices grown on free-standing GaN substrates with GaN spacer structures |
| DE102005035722B9 (de) * | 2005-07-29 | 2021-11-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
| DE102005048196B4 (de) * | 2005-07-29 | 2023-01-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierender Halbleiterchip |
| JP2007095823A (ja) * | 2005-09-27 | 2007-04-12 | Toyota Central Res & Dev Lab Inc | 半導体装置と半導体装置製造方法 |
| US7772604B2 (en) | 2006-01-05 | 2010-08-10 | Illumitex | Separate optical device for directing light from an LED |
| JP2007227621A (ja) * | 2006-02-23 | 2007-09-06 | Toyota Central Res & Dev Lab Inc | 絶縁ゲート構造体を有する半導体装置とその製造方法 |
| KR100818269B1 (ko) * | 2006-06-23 | 2008-04-01 | 삼성전자주식회사 | 질화물 반도체 발광소자 |
| KR20090064474A (ko) | 2006-10-02 | 2009-06-18 | 일루미텍스, 인크. | Ｌｅｄ 시스템 및 방법 |
| WO2008117788A1 (ja) * | 2007-03-26 | 2008-10-02 | Ngk Insulators, Ltd. | 発光素子 |
| JP2011512037A (ja) | 2008-02-08 | 2011-04-14 | イルミテックス， インコーポレイテッド | エミッタ層成形のためのシステムおよび方法 |
| US7902545B2 (en) * | 2008-05-14 | 2011-03-08 | Baker Hughes Incorporated | Semiconductor for use in harsh environments |
| TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
| US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
| US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
| JP2012015154A (ja) * | 2010-06-29 | 2012-01-19 | Ngk Insulators Ltd | 半導体発光素子および半導体発光素子の製造方法 |
| TWI486254B (zh) * | 2010-09-20 | 2015-06-01 | Nitto Denko Corp | 發光陶瓷層板及其製造方法 |
| TWI449224B (zh) * | 2011-02-25 | 2014-08-11 | Univ Nat Chiao Tung | 半導體發光元件 |
| US8354689B2 (en) * | 2011-04-28 | 2013-01-15 | Palo Alto Research Center Incorporated | Light emitting devices having dopant front loaded tunnel barrier layers |
| CN103824910A (zh) * | 2014-03-12 | 2014-05-28 | 合肥彩虹蓝光科技有限公司 | 一种提高ⅲ－ⅴ族化合物半导体led芯片抗静电能力的外延生长方法 |
| CN103872204B (zh) * | 2014-03-12 | 2017-01-04 | 合肥彩虹蓝光科技有限公司 | 一种具有循环结构的p型插入层及生长方法 |
| CN103824908B (zh) * | 2014-03-12 | 2016-09-14 | 合肥彩虹蓝光科技有限公司 | 一种提高GaN基LED静电耐受能力的外延生长方法 |
| CN103887378B (zh) * | 2014-03-28 | 2017-05-24 | 西安神光皓瑞光电科技有限公司 | 一种高光效紫外led的外延生长方法 |
| JP2014199953A (ja) * | 2014-07-28 | 2014-10-23 | 日本碍子株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| JP6737800B2 (ja) * | 2015-11-02 | 2020-08-12 | 日本碍子株式会社 | 半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の製造方法 |
| US11056434B2 (en) * | 2017-01-26 | 2021-07-06 | Epistar Corporation | Semiconductor device having specified p-type dopant concentration profile |
| CN107221585A (zh) * | 2017-05-17 | 2017-09-29 | 聚灿光电科技股份有限公司 | Led外延结构及其制备方法 |
| CN108110109B (zh) * | 2017-12-29 | 2019-12-06 | 安徽三安光电有限公司 | 一种发光二极管 |
| US11552217B2 (en) * | 2018-11-12 | 2023-01-10 | Epistar Corporation | Semiconductor device |
| CN109860360B (zh) * | 2018-11-29 | 2020-08-18 | 华灿光电（浙江）有限公司 | 一种氮化镓基发光二极管外延片及其制备方法 |
| JP7448782B2 (ja) | 2019-12-20 | 2024-03-13 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法 |
| US12051769B2 (en) | 2021-10-13 | 2024-07-30 | Creeled, Inc. | Integrated warning structures for energized ultraviolet light-emitting diode packages |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4614961A (en) | 1984-10-09 | 1986-09-30 | Honeywell Inc. | Tunable cut-off UV detector based on the aluminum gallium nitride material system |
| JPH10321042A (ja) * | 1997-05-21 | 1998-12-04 | Tonen Chem Corp | 非プロトン性電解質薄膜およびその製造方法 |
| EP1928034A3 (en) | 1997-12-15 | 2008-06-18 | Philips Lumileds Lighting Company LLC | Light emitting device |
| US6153894A (en) * | 1998-11-12 | 2000-11-28 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting device |
| US6218293B1 (en) * | 1998-11-13 | 2001-04-17 | Micron Technology, Inc. | Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride |
| US6222207B1 (en) | 1999-05-24 | 2001-04-24 | Lumileds Lighting, U.S. Llc | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip |
| KR100348269B1 (ko) | 2000-03-22 | 2002-08-09 | 엘지전자 주식회사 | 루데니움 산화물을 이용한 쇼트키 콘택 방법 |
| US6800876B2 (en) * | 2001-01-16 | 2004-10-05 | Cree, Inc. | Group III nitride LED with undoped cladding layer (5000.137) |
| US6511876B2 (en) * | 2001-06-25 | 2003-01-28 | International Business Machines Corporation | High mobility FETS using A1203 as a gate oxide |
-
2004
- 2004-05-06 WO PCT/US2004/014171 patent/WO2004102153A2/en not_active Ceased
- 2004-05-06 US US10/840,515 patent/US7282744B2/en not_active Expired - Lifetime
- 2004-05-06 JP JP2006532828A patent/JP2007504682A/ja active Pending
- 2004-05-07 TW TW093112874A patent/TWI244223B/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103003931A (zh) * | 2010-07-29 | 2013-03-27 | 日本碍子株式会社 | 半导体元件用外延基板、半导体元件、pn接合二极管元件以及半导体元件用外延基板的制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004102153A3 (en) | 2005-04-14 |
| TW200425549A (en) | 2004-11-16 |
| US20040222431A1 (en) | 2004-11-11 |
| WO2004102153A2 (en) | 2004-11-25 |
| US7282744B2 (en) | 2007-10-16 |
| JP2007504682A (ja) | 2007-03-01 |
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| Date | Code | Title | Description |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |