JP2007501524A5 - - Google Patents

Download PDF

Info

Publication number
JP2007501524A5
JP2007501524A5 JP2006522626A JP2006522626A JP2007501524A5 JP 2007501524 A5 JP2007501524 A5 JP 2007501524A5 JP 2006522626 A JP2006522626 A JP 2006522626A JP 2006522626 A JP2006522626 A JP 2006522626A JP 2007501524 A5 JP2007501524 A5 JP 2007501524A5
Authority
JP
Japan
Prior art keywords
insulating layer
fin
gate
height
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006522626A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007501524A (ja
Filing date
Publication date
Priority claimed from US10/633,504 external-priority patent/US7095065B2/en
Application filed filed Critical
Publication of JP2007501524A publication Critical patent/JP2007501524A/ja
Publication of JP2007501524A5 publication Critical patent/JP2007501524A5/ja
Pending legal-status Critical Current

Links

JP2006522626A 2003-08-05 2004-07-28 全体的な設計目標を達成すべく、半導体デバイス中のキャリア移動度の可変な半導体デバイス Pending JP2007501524A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/633,504 US7095065B2 (en) 2003-08-05 2003-08-05 Varying carrier mobility in semiconductor devices to achieve overall design goals
PCT/US2004/024590 WO2005034207A2 (en) 2003-08-05 2004-07-28 Varying carrier mobility on finfet active surfaces to achieve overall design goals

Publications (2)

Publication Number Publication Date
JP2007501524A JP2007501524A (ja) 2007-01-25
JP2007501524A5 true JP2007501524A5 (https=) 2007-08-02

Family

ID=34115850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006522626A Pending JP2007501524A (ja) 2003-08-05 2004-07-28 全体的な設計目標を達成すべく、半導体デバイス中のキャリア移動度の可変な半導体デバイス

Country Status (8)

Country Link
US (1) US7095065B2 (https=)
JP (1) JP2007501524A (https=)
KR (1) KR101042713B1 (https=)
CN (1) CN1826696B (https=)
DE (1) DE112004001442T5 (https=)
GB (1) GB2419234B (https=)
TW (1) TWI363421B (https=)
WO (1) WO2005034207A2 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855607B2 (en) * 2003-06-12 2005-02-15 Advanced Micro Devices, Inc. Multi-step chemical mechanical polishing of a gate area in a FinFET
US6946377B2 (en) * 2003-10-29 2005-09-20 Texas Instruments Incorporated Multiple-gate MOSFET device with lithography independent silicon body thickness and methods for fabricating the same
US7087471B2 (en) * 2004-03-15 2006-08-08 International Business Machines Corporation Locally thinned fins
FR2899017A1 (fr) * 2006-03-21 2007-09-28 St Microelectronics Sa Procede de realisation d'un transistor a canal comprenant du germanium
WO2007122567A1 (en) * 2006-04-26 2007-11-01 Nxp B.V. Non-volatile memory device
US7517764B2 (en) * 2006-06-29 2009-04-14 International Business Machines Corporation Bulk FinFET device
US8883597B2 (en) * 2007-07-31 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabrication of a FinFET element
FR2928028B1 (fr) * 2008-02-27 2011-07-15 St Microelectronics Crolles 2 Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant.
FR2928029B1 (fr) * 2008-02-27 2011-04-08 St Microelectronics Crolles 2 Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant.
JP5718585B2 (ja) * 2010-05-19 2015-05-13 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びその製造方法、並びにデータ処理システム
US20120146101A1 (en) * 2010-12-13 2012-06-14 Chun-Hsien Lin Multi-gate transistor devices and manufacturing method thereof
US9059001B2 (en) * 2011-12-16 2015-06-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with biased feature
DE112011105996B4 (de) 2011-12-22 2023-11-16 Intel Corporation Halbleiterbauelement mit einem verengten Halbleiterkörper
CN103474461B (zh) * 2012-06-06 2016-01-06 中芯国际集成电路制造(上海)有限公司 鳍式场效应管及其形成方法
US8841189B1 (en) * 2013-06-14 2014-09-23 International Business Machines Corporation Transistor having all-around source/drain metal contact channel stressor and method to fabricate same
US9425275B2 (en) 2014-06-13 2016-08-23 Samsung Electronics Co., Ltd. Integrated circuit chips having field effect transistors with different gate designs
US9112032B1 (en) * 2014-06-16 2015-08-18 Globalfoundries Inc. Methods of forming replacement gate structures on semiconductor devices
US9590074B1 (en) 2015-12-05 2017-03-07 International Business Machines Corporation Method to prevent lateral epitaxial growth in semiconductor devices
US10879125B2 (en) * 2018-12-27 2020-12-29 Nanya Technology Corporation FinFET structure and method of manufacturing the same
US11670675B2 (en) 2020-12-04 2023-06-06 United Semiconductor Japan Co., Ltd. Semiconductor device
CN115669260A (zh) * 2021-05-12 2023-01-31 长江存储科技有限责任公司 具有三维晶体管的存储器外围电路及其形成方法
CN113764348B (zh) * 2021-09-07 2023-06-16 上海集成电路装备材料产业创新中心有限公司 鳍式半导体器件的制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61112364A (ja) * 1984-11-07 1986-05-30 Hitachi Ltd 半導体装置
JPH03250770A (ja) * 1990-02-28 1991-11-08 Sony Corp 半導体装置
US5391506A (en) 1992-01-31 1995-02-21 Kawasaki Steel Corporation Manufacturing method for semiconductor devices with source/drain formed in substrate projection.
JPH06342911A (ja) * 1993-06-01 1994-12-13 Oki Electric Ind Co Ltd 半導体装置の製造方法
US6563143B2 (en) * 1999-07-29 2003-05-13 Stmicroelectronics, Inc. CMOS circuit of GaAs/Ge on Si substrate
US20020011612A1 (en) 2000-07-31 2002-01-31 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
JP2002118255A (ja) * 2000-07-31 2002-04-19 Toshiba Corp 半導体装置およびその製造方法
JP2002151688A (ja) * 2000-08-28 2002-05-24 Mitsubishi Electric Corp Ｍｏｓ型半導体装置およびその製造方法
US6916727B2 (en) * 2001-06-21 2005-07-12 Massachusetts Institute Of Technology Enhancement of P-type metal-oxide-semiconductor field effect transistors
US6492212B1 (en) * 2001-10-05 2002-12-10 International Business Machines Corporation Variable threshold voltage double gated transistors and method of fabrication
US6657259B2 (en) 2001-12-04 2003-12-02 International Business Machines Corporation Multiple-plane FinFET CMOS
JP4265882B2 (ja) * 2001-12-13 2009-05-20 忠弘 大見 相補型ｍｉｓ装置
US7214991B2 (en) 2002-12-06 2007-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS inverters configured using multiple-gate transistors
US6909147B2 (en) * 2003-05-05 2005-06-21 International Business Machines Corporation Multi-height FinFETS

Similar Documents

Publication Publication Date Title
JP2007501524A5 (https=)
JP2006512774A5 (https=)
CN101609812B (zh) 静电放电元件的形成方法
CN107017257B (zh) 具有垂直fet器件的静态随机存取存储器件
JP2006516821A5 (https=)
US20150311341A1 (en) Semiconductor device having fin-type field effect transistor and method of manufacturing the same
DE602006008984D1 (de) Herstellungsverfahren für finfets mit verringertem widerstand
WO2005067677A3 (en) High performance strained silicon finfets device and method for forming same
EP4220719A3 (en) Fin patterning for advanced integrated circuit structure fabrication
JP2004343118A5 (https=)
US20210202483A1 (en) Semiconductor device and method for forming the same
CN104835851B (zh) 一种薄膜晶体管、阵列基板及显示装置
JP2007533121A5 (https=)
TW200711148A (en) Stressed field effect transistors on hybrid orientation substrate
JP2008503104A5 (https=)
JP2005072566A5 (https=)
JP2007500952A5 (https=)
WO2005034207A3 (en) Varying carrier mobility on finfet active surfaces to achieve overall design goals
KR20080085192A (ko) Ｍｏｓｆｅｔ 게이트 전극 랜딩 패드에 대한 구조 및 방법
JP2010258124A5 (ja) 半導体装置
US9754792B1 (en) Fin cutting process for manufacturing FinFET semiconductor devices
JPWO2019171198A5 (https=)
JP2008508718A5 (https=)
JP2007519239A5 (https=)
FR2870043B1 (fr) Fabrication de zones actives de natures differentes directement sur isolant et application au transistor mos a simple ou double grille