JP2007500938A5 - - Google Patents

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Publication number
JP2007500938A5
JP2007500938A5 JP2006521870A JP2006521870A JP2007500938A5 JP 2007500938 A5 JP2007500938 A5 JP 2007500938A5 JP 2006521870 A JP2006521870 A JP 2006521870A JP 2006521870 A JP2006521870 A JP 2006521870A JP 2007500938 A5 JP2007500938 A5 JP 2007500938A5
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JP
Japan
Prior art keywords
control gate
voltage
transistor
applying
storage location
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006521870A
Other languages
English (en)
Japanese (ja)
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JP2007500938A (ja
Filing date
Publication date
Priority claimed from US10/631,142 external-priority patent/US6816414B1/en
Application filed filed Critical
Publication of JP2007500938A publication Critical patent/JP2007500938A/ja
Publication of JP2007500938A5 publication Critical patent/JP2007500938A5/ja
Pending legal-status Critical Current

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JP2006521870A 2003-07-31 2004-07-13 不揮発性メモリおよびその製造方法 Pending JP2007500938A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/631,142 US6816414B1 (en) 2003-07-31 2003-07-31 Nonvolatile memory and method of making same
PCT/US2004/022436 WO2005013281A2 (en) 2003-07-31 2004-07-13 Nonvolatile memory and method of making same

Publications (2)

Publication Number Publication Date
JP2007500938A JP2007500938A (ja) 2007-01-18
JP2007500938A5 true JP2007500938A5 (enExample) 2007-08-30

Family

ID=33311102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006521870A Pending JP2007500938A (ja) 2003-07-31 2004-07-13 不揮発性メモリおよびその製造方法

Country Status (6)

Country Link
US (1) US6816414B1 (enExample)
JP (1) JP2007500938A (enExample)
KR (1) KR101039244B1 (enExample)
CN (1) CN1816883A (enExample)
TW (1) TWI360818B (enExample)
WO (1) WO2005013281A2 (enExample)

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US7957190B2 (en) 2008-05-30 2011-06-07 Freescale Semiconductor, Inc. Memory having P-type split gate memory cells and method of operation
US8372699B2 (en) * 2010-02-22 2013-02-12 Freescale Semiconductor, Inc. Method for forming a split-gate memory cell
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US20140167136A1 (en) * 2012-12-14 2014-06-19 Spansion Llc Charge Trapping Device with Improved Select Gate to Memory Gate Isoloation
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