CN1816883A - 非易失性存储器及其制造方法 - Google Patents

非易失性存储器及其制造方法 Download PDF

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Publication number
CN1816883A
CN1816883A CNA2004800192720A CN200480019272A CN1816883A CN 1816883 A CN1816883 A CN 1816883A CN A2004800192720 A CNA2004800192720 A CN A2004800192720A CN 200480019272 A CN200480019272 A CN 200480019272A CN 1816883 A CN1816883 A CN 1816883A
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CN
China
Prior art keywords
transistor
control gate
voltage
gate
charge storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2004800192720A
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English (en)
Chinese (zh)
Inventor
欧文·J·普林兹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN1816883A publication Critical patent/CN1816883A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/687—Floating-gate IGFETs having more than two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G11C16/0458—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates comprising two or more independent floating gates which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/06—Floating gate cells in which the floating gate consists of multiple isolated silicon islands, e.g. nanocrystals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CNA2004800192720A 2003-07-31 2004-07-13 非易失性存储器及其制造方法 Pending CN1816883A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/631,142 US6816414B1 (en) 2003-07-31 2003-07-31 Nonvolatile memory and method of making same
US10/631,142 2003-07-31

Publications (1)

Publication Number Publication Date
CN1816883A true CN1816883A (zh) 2006-08-09

Family

ID=33311102

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2004800192720A Pending CN1816883A (zh) 2003-07-31 2004-07-13 非易失性存储器及其制造方法

Country Status (6)

Country Link
US (1) US6816414B1 (enExample)
JP (1) JP2007500938A (enExample)
KR (1) KR101039244B1 (enExample)
CN (1) CN1816883A (enExample)
TW (1) TWI360818B (enExample)
WO (1) WO2005013281A2 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101578706B (zh) * 2007-01-23 2011-05-18 飞思卡尔半导体公司 制造非易失性存储器器件的方法
CN102201453A (zh) * 2010-03-25 2011-09-28 台湾积体电路制造股份有限公司 存储器单元及非易失性存储器装置及其形成方法
CN101809669B (zh) * 2007-09-28 2015-07-29 飞思卡尔半导体公司 相变存储器单元及方法
CN106057240A (zh) * 2015-04-06 2016-10-26 爱思开海力士有限公司 非易失性存储单元和包括其的非易失性存储单元阵列
CN109994142A (zh) * 2017-12-29 2019-07-09 旺宏电子股份有限公司 避免制程期间电荷所影响的方法、制造方法与集成电路

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7192876B2 (en) 2003-05-22 2007-03-20 Freescale Semiconductor, Inc. Transistor with independent gate structures
DE10326805B4 (de) * 2003-06-13 2007-02-15 Infineon Technologies Ag Herstellungsverfahren für nichtflüchtige Speicherzellen
US7098502B2 (en) * 2003-11-10 2006-08-29 Freescale Semiconductor, Inc. Transistor having three electrically isolated electrodes and method of formation
US7015535B2 (en) * 2004-05-04 2006-03-21 Oki Electric Industry Co., Ltd. Nonvolatile semiconductor memory device
US7324376B2 (en) * 2004-09-09 2008-01-29 Macronix International Co., Ltd. Method and apparatus for operating nonvolatile memory cells in a series arrangement
US7307888B2 (en) * 2004-09-09 2007-12-11 Macronix International Co., Ltd. Method and apparatus for operating nonvolatile memory in a parallel arrangement
US7327607B2 (en) * 2004-09-09 2008-02-05 Macronix International Co., Ltd. Method and apparatus for operating nonvolatile memory cells in a series arrangement
US7170785B2 (en) * 2004-09-09 2007-01-30 Macronix International Co., Ltd. Method and apparatus for operating a string of charge trapping memory cells
US7518179B2 (en) * 2004-10-08 2009-04-14 Freescale Semiconductor, Inc. Virtual ground memory array and method therefor
US7170128B2 (en) * 2004-12-02 2007-01-30 Atmel Corporation Multi-bit nanocrystal memory
KR100672998B1 (ko) * 2005-02-14 2007-01-24 삼성전자주식회사 불휘발성 메모리 소자, 그 구동 방법 및 형성 방법
US7619270B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Electronic device including discontinuous storage elements
US7619275B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
WO2007014115A1 (en) * 2005-07-25 2007-02-01 Freescale Semiconductor Electronic device including discontinuous storage elements
US7642594B2 (en) * 2005-07-25 2010-01-05 Freescale Semiconductor, Inc Electronic device including gate lines, bit lines, or a combination thereof
US7394686B2 (en) * 2005-07-25 2008-07-01 Freescale Semiconductor, Inc. Programmable structure including discontinuous storage elements and spacer control gates in a trench
US7262997B2 (en) 2005-07-25 2007-08-28 Freescale Semiconductor, Inc. Process for operating an electronic device including a memory array and conductive lines
US7112490B1 (en) * 2005-07-25 2006-09-26 Freescale Semiconductor, Inc. Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench
US7582929B2 (en) * 2005-07-25 2009-09-01 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements
US7446372B2 (en) * 2005-09-01 2008-11-04 Micron Technology, Inc. DRAM tunneling access transistor
US7456465B2 (en) * 2005-09-30 2008-11-25 Freescale Semiconductor, Inc. Split gate memory cell and method therefor
TWI287868B (en) * 2005-11-17 2007-10-01 Ememory Technology Inc Single-poly non-volatile memory device
US20070158734A1 (en) * 2006-01-09 2007-07-12 Freescale Semiconductor, Inc. Electronic device with a multi-gated electrode structure and a process for forming the electronic device
US7341914B2 (en) * 2006-03-15 2008-03-11 Freescale Semiconductor, Inc. Method for forming a non-volatile memory and a peripheral device on a semiconductor substrate
US7700439B2 (en) * 2006-03-15 2010-04-20 Freescale Semiconductor, Inc. Silicided nonvolatile memory and method of making same
US7592224B2 (en) 2006-03-30 2009-09-22 Freescale Semiconductor, Inc Method of fabricating a storage device including decontinuous storage elements within and between trenches
US7656704B2 (en) * 2006-07-20 2010-02-02 Winbond Electronics Corp. Multi-level operation in nitride storage memory cell
US7483299B2 (en) * 2006-08-01 2009-01-27 Macronix International Co., Ltd. Devices and operation methods for reducing second bit effect in memory device
US7667260B2 (en) * 2006-08-09 2010-02-23 Micron Technology, Inc. Nanoscale floating gate and methods of formation
US7524719B2 (en) * 2006-08-31 2009-04-28 Freescale Semiconductor, Inc. Method of making self-aligned split gate memory cell
US7572699B2 (en) * 2007-01-24 2009-08-11 Freescale Semiconductor, Inc Process of forming an electronic device including fins and discontinuous storage elements
US7838922B2 (en) * 2007-01-24 2010-11-23 Freescale Semiconductor, Inc. Electronic device including trenches and discontinuous storage elements
US7651916B2 (en) 2007-01-24 2010-01-26 Freescale Semiconductor, Inc Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
US7932189B2 (en) * 2007-01-26 2011-04-26 Freescale Semiconductor, Inc. Process of forming an electronic device including a layer of discontinuous storage elements
US7416945B1 (en) * 2007-02-19 2008-08-26 Freescale Semiconductor, Inc. Method for forming a split gate memory device
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US7838363B2 (en) * 2007-10-31 2010-11-23 Freescale Semiconductor, Inc. Method of forming a split gate non-volatile memory cell
US20090251972A1 (en) * 2008-04-03 2009-10-08 Yue-Song He Nonvolatile memory arrays with charge trapping dielectric and with non-dielectric nanodots
US7957190B2 (en) 2008-05-30 2011-06-07 Freescale Semiconductor, Inc. Memory having P-type split gate memory cells and method of operation
US8372699B2 (en) * 2010-02-22 2013-02-12 Freescale Semiconductor, Inc. Method for forming a split-gate memory cell
US8163615B1 (en) 2011-03-21 2012-04-24 Freescale Semiconductor, Inc. Split-gate non-volatile memory cell having improved overlap tolerance and method therefor
US20140167136A1 (en) * 2012-12-14 2014-06-19 Spansion Llc Charge Trapping Device with Improved Select Gate to Memory Gate Isoloation
US20140357072A1 (en) * 2013-05-31 2014-12-04 Jinmiao J. Shen Methods and structures for split gate memory
CN114335004B (zh) * 2022-03-11 2022-05-17 江苏游隼微电子有限公司 一种1.5t sonos器件及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0135239B1 (ko) * 1994-07-28 1998-04-22 김주용 플래쉬 이이피롬 셀 및 그 제조방법
JP3498116B2 (ja) * 1995-10-26 2004-02-16 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US5740104A (en) * 1997-01-29 1998-04-14 Micron Technology, Inc. Multi-state flash memory cell and method for programming single electron differences
US5801401A (en) * 1997-01-29 1998-09-01 Micron Technology, Inc. Flash memory with microcrystalline silicon carbide film floating gate
US5824584A (en) 1997-06-16 1998-10-20 Motorola, Inc. Method of making and accessing split gate memory device
US5969383A (en) 1997-06-16 1999-10-19 Motorola, Inc. Split-gate memory device and method for accessing the same
KR100488583B1 (ko) * 1997-12-31 2005-12-08 삼성전자주식회사 듀얼비트게이트분리형플래쉬메모리소자및그의구동방법
US6255166B1 (en) 1999-08-05 2001-07-03 Aalo Lsi Design & Device Technology, Inc. Nonvolatile memory cell, method of programming the same and nonvolatile memory array
JP4058219B2 (ja) * 1999-09-17 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路
JP3820917B2 (ja) * 2000-06-12 2006-09-13 ソニー株式会社 半導体記憶装置およびその動作方法
US6400610B1 (en) * 2000-07-05 2002-06-04 Motorola, Inc. Memory device including isolated storage elements that utilize hole conduction and method therefor
JP4147765B2 (ja) * 2001-06-01 2008-09-10 ソニー株式会社 不揮発性半導体メモリ装置およびその電荷注入方法
JP3622697B2 (ja) * 2001-07-23 2005-02-23 セイコーエプソン株式会社 不揮発性半導体記憶装置
TW546840B (en) * 2001-07-27 2003-08-11 Hitachi Ltd Non-volatile semiconductor memory device
JP2004040064A (ja) * 2002-07-01 2004-02-05 Yutaka Hayashi 不揮発性メモリとその製造方法
US6706599B1 (en) * 2003-03-20 2004-03-16 Motorola, Inc. Multi-bit non-volatile memory device and method therefor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101578706B (zh) * 2007-01-23 2011-05-18 飞思卡尔半导体公司 制造非易失性存储器器件的方法
CN101809669B (zh) * 2007-09-28 2015-07-29 飞思卡尔半导体公司 相变存储器单元及方法
CN102201453A (zh) * 2010-03-25 2011-09-28 台湾积体电路制造股份有限公司 存储器单元及非易失性存储器装置及其形成方法
CN102201453B (zh) * 2010-03-25 2013-03-06 台湾积体电路制造股份有限公司 存储器单元及非易失性存储器装置及其形成方法
CN106057240A (zh) * 2015-04-06 2016-10-26 爱思开海力士有限公司 非易失性存储单元和包括其的非易失性存储单元阵列
CN106057240B (zh) * 2015-04-06 2020-12-18 爱思开海力士有限公司 非易失性存储单元和包括其的非易失性存储单元阵列
CN109994142A (zh) * 2017-12-29 2019-07-09 旺宏电子股份有限公司 避免制程期间电荷所影响的方法、制造方法与集成电路
CN109994142B (zh) * 2017-12-29 2021-04-20 旺宏电子股份有限公司 避免制程期间电荷所影响的方法、制造方法与集成电路

Also Published As

Publication number Publication date
JP2007500938A (ja) 2007-01-18
WO2005013281A2 (en) 2005-02-10
TWI360818B (en) 2012-03-21
KR20060054400A (ko) 2006-05-22
TW200522079A (en) 2005-07-01
WO2005013281A3 (en) 2005-05-19
KR101039244B1 (ko) 2011-06-08
US6816414B1 (en) 2004-11-09

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