TWI360818B - Nonvolatile memory and method of making same - Google Patents
Nonvolatile memory and method of making same Download PDFInfo
- Publication number
- TWI360818B TWI360818B TW093122950A TW93122950A TWI360818B TW I360818 B TWI360818 B TW I360818B TW 093122950 A TW093122950 A TW 093122950A TW 93122950 A TW93122950 A TW 93122950A TW I360818 B TWI360818 B TW I360818B
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- gate
- voltage
- control gate
- applying
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000003989 dielectric material Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 230000005611 electricity Effects 0.000 claims description 4
- 239000000428 dust Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 3
- 238000007599 discharging Methods 0.000 claims 2
- 230000005684 electric field Effects 0.000 claims 2
- 206010029412 Nightmare Diseases 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 235000011194 food seasoning agent Nutrition 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000002159 nanocrystal Substances 0.000 description 5
- 239000007943 implant Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- WUOBERCRSABHOT-UHFFFAOYSA-N diantimony Chemical compound [Sb]#[Sb] WUOBERCRSABHOT-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005524 hole trap Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000010977 unit operation Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/687—Floating-gate IGFETs having more than two programming levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
- H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
- G11C16/0458—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates comprising two or more independent floating gates which store independent data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0491—Virtual ground arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/06—Floating gate cells in which the floating gate consists of multiple isolated silicon islands, e.g. nanocrystals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/631,142 US6816414B1 (en) | 2003-07-31 | 2003-07-31 | Nonvolatile memory and method of making same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200522079A TW200522079A (en) | 2005-07-01 |
| TWI360818B true TWI360818B (en) | 2012-03-21 |
Family
ID=33311102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093122950A TWI360818B (en) | 2003-07-31 | 2004-07-30 | Nonvolatile memory and method of making same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6816414B1 (enExample) |
| JP (1) | JP2007500938A (enExample) |
| KR (1) | KR101039244B1 (enExample) |
| CN (1) | CN1816883A (enExample) |
| TW (1) | TWI360818B (enExample) |
| WO (1) | WO2005013281A2 (enExample) |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7192876B2 (en) | 2003-05-22 | 2007-03-20 | Freescale Semiconductor, Inc. | Transistor with independent gate structures |
| DE10326805B4 (de) * | 2003-06-13 | 2007-02-15 | Infineon Technologies Ag | Herstellungsverfahren für nichtflüchtige Speicherzellen |
| US7098502B2 (en) * | 2003-11-10 | 2006-08-29 | Freescale Semiconductor, Inc. | Transistor having three electrically isolated electrodes and method of formation |
| US7015535B2 (en) * | 2004-05-04 | 2006-03-21 | Oki Electric Industry Co., Ltd. | Nonvolatile semiconductor memory device |
| US7324376B2 (en) * | 2004-09-09 | 2008-01-29 | Macronix International Co., Ltd. | Method and apparatus for operating nonvolatile memory cells in a series arrangement |
| US7307888B2 (en) * | 2004-09-09 | 2007-12-11 | Macronix International Co., Ltd. | Method and apparatus for operating nonvolatile memory in a parallel arrangement |
| US7327607B2 (en) * | 2004-09-09 | 2008-02-05 | Macronix International Co., Ltd. | Method and apparatus for operating nonvolatile memory cells in a series arrangement |
| US7170785B2 (en) * | 2004-09-09 | 2007-01-30 | Macronix International Co., Ltd. | Method and apparatus for operating a string of charge trapping memory cells |
| US7518179B2 (en) * | 2004-10-08 | 2009-04-14 | Freescale Semiconductor, Inc. | Virtual ground memory array and method therefor |
| US7170128B2 (en) * | 2004-12-02 | 2007-01-30 | Atmel Corporation | Multi-bit nanocrystal memory |
| KR100672998B1 (ko) * | 2005-02-14 | 2007-01-24 | 삼성전자주식회사 | 불휘발성 메모리 소자, 그 구동 방법 및 형성 방법 |
| US7619270B2 (en) * | 2005-07-25 | 2009-11-17 | Freescale Semiconductor, Inc. | Electronic device including discontinuous storage elements |
| US7619275B2 (en) * | 2005-07-25 | 2009-11-17 | Freescale Semiconductor, Inc. | Process for forming an electronic device including discontinuous storage elements |
| WO2007014115A1 (en) * | 2005-07-25 | 2007-02-01 | Freescale Semiconductor | Electronic device including discontinuous storage elements |
| US7642594B2 (en) * | 2005-07-25 | 2010-01-05 | Freescale Semiconductor, Inc | Electronic device including gate lines, bit lines, or a combination thereof |
| US7394686B2 (en) * | 2005-07-25 | 2008-07-01 | Freescale Semiconductor, Inc. | Programmable structure including discontinuous storage elements and spacer control gates in a trench |
| US7262997B2 (en) | 2005-07-25 | 2007-08-28 | Freescale Semiconductor, Inc. | Process for operating an electronic device including a memory array and conductive lines |
| US7112490B1 (en) * | 2005-07-25 | 2006-09-26 | Freescale Semiconductor, Inc. | Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench |
| US7582929B2 (en) * | 2005-07-25 | 2009-09-01 | Freescale Semiconductor, Inc | Electronic device including discontinuous storage elements |
| US7446372B2 (en) * | 2005-09-01 | 2008-11-04 | Micron Technology, Inc. | DRAM tunneling access transistor |
| US7456465B2 (en) * | 2005-09-30 | 2008-11-25 | Freescale Semiconductor, Inc. | Split gate memory cell and method therefor |
| TWI287868B (en) * | 2005-11-17 | 2007-10-01 | Ememory Technology Inc | Single-poly non-volatile memory device |
| US20070158734A1 (en) * | 2006-01-09 | 2007-07-12 | Freescale Semiconductor, Inc. | Electronic device with a multi-gated electrode structure and a process for forming the electronic device |
| US7341914B2 (en) * | 2006-03-15 | 2008-03-11 | Freescale Semiconductor, Inc. | Method for forming a non-volatile memory and a peripheral device on a semiconductor substrate |
| US7700439B2 (en) * | 2006-03-15 | 2010-04-20 | Freescale Semiconductor, Inc. | Silicided nonvolatile memory and method of making same |
| US7592224B2 (en) | 2006-03-30 | 2009-09-22 | Freescale Semiconductor, Inc | Method of fabricating a storage device including decontinuous storage elements within and between trenches |
| US7656704B2 (en) * | 2006-07-20 | 2010-02-02 | Winbond Electronics Corp. | Multi-level operation in nitride storage memory cell |
| US7483299B2 (en) * | 2006-08-01 | 2009-01-27 | Macronix International Co., Ltd. | Devices and operation methods for reducing second bit effect in memory device |
| US7667260B2 (en) * | 2006-08-09 | 2010-02-23 | Micron Technology, Inc. | Nanoscale floating gate and methods of formation |
| US7524719B2 (en) * | 2006-08-31 | 2009-04-28 | Freescale Semiconductor, Inc. | Method of making self-aligned split gate memory cell |
| US7557008B2 (en) * | 2007-01-23 | 2009-07-07 | Freescale Semiconductor, Inc. | Method of making a non-volatile memory device |
| US7572699B2 (en) * | 2007-01-24 | 2009-08-11 | Freescale Semiconductor, Inc | Process of forming an electronic device including fins and discontinuous storage elements |
| US7838922B2 (en) * | 2007-01-24 | 2010-11-23 | Freescale Semiconductor, Inc. | Electronic device including trenches and discontinuous storage elements |
| US7651916B2 (en) | 2007-01-24 | 2010-01-26 | Freescale Semiconductor, Inc | Electronic device including trenches and discontinuous storage elements and processes of forming and using the same |
| US7932189B2 (en) * | 2007-01-26 | 2011-04-26 | Freescale Semiconductor, Inc. | Process of forming an electronic device including a layer of discontinuous storage elements |
| US7416945B1 (en) * | 2007-02-19 | 2008-08-26 | Freescale Semiconductor, Inc. | Method for forming a split gate memory device |
| US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
| US7719039B2 (en) * | 2007-09-28 | 2010-05-18 | Freescale Semiconductor, Inc. | Phase change memory structures including pillars |
| US7838363B2 (en) * | 2007-10-31 | 2010-11-23 | Freescale Semiconductor, Inc. | Method of forming a split gate non-volatile memory cell |
| US20090251972A1 (en) * | 2008-04-03 | 2009-10-08 | Yue-Song He | Nonvolatile memory arrays with charge trapping dielectric and with non-dielectric nanodots |
| US7957190B2 (en) | 2008-05-30 | 2011-06-07 | Freescale Semiconductor, Inc. | Memory having P-type split gate memory cells and method of operation |
| US8372699B2 (en) * | 2010-02-22 | 2013-02-12 | Freescale Semiconductor, Inc. | Method for forming a split-gate memory cell |
| US8536039B2 (en) * | 2010-03-25 | 2013-09-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Nano-crystal gate structure for non-volatile memory |
| US8163615B1 (en) | 2011-03-21 | 2012-04-24 | Freescale Semiconductor, Inc. | Split-gate non-volatile memory cell having improved overlap tolerance and method therefor |
| US20140167136A1 (en) * | 2012-12-14 | 2014-06-19 | Spansion Llc | Charge Trapping Device with Improved Select Gate to Memory Gate Isoloation |
| US20140357072A1 (en) * | 2013-05-31 | 2014-12-04 | Jinmiao J. Shen | Methods and structures for split gate memory |
| KR102345674B1 (ko) * | 2015-04-06 | 2021-12-31 | 에스케이하이닉스 주식회사 | 불휘발성 메모리소자 및 그 제조방법과, 불휘발성 메모리 셀어레이 |
| US10325663B1 (en) * | 2017-12-29 | 2019-06-18 | Macronix International Co., Ltd. | Protecting memory cells from in-process charging effects |
| CN114335004B (zh) * | 2022-03-11 | 2022-05-17 | 江苏游隼微电子有限公司 | 一种1.5t sonos器件及其制备方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0135239B1 (ko) * | 1994-07-28 | 1998-04-22 | 김주용 | 플래쉬 이이피롬 셀 및 그 제조방법 |
| JP3498116B2 (ja) * | 1995-10-26 | 2004-02-16 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
| US5740104A (en) * | 1997-01-29 | 1998-04-14 | Micron Technology, Inc. | Multi-state flash memory cell and method for programming single electron differences |
| US5801401A (en) * | 1997-01-29 | 1998-09-01 | Micron Technology, Inc. | Flash memory with microcrystalline silicon carbide film floating gate |
| US5824584A (en) | 1997-06-16 | 1998-10-20 | Motorola, Inc. | Method of making and accessing split gate memory device |
| US5969383A (en) | 1997-06-16 | 1999-10-19 | Motorola, Inc. | Split-gate memory device and method for accessing the same |
| KR100488583B1 (ko) * | 1997-12-31 | 2005-12-08 | 삼성전자주식회사 | 듀얼비트게이트분리형플래쉬메모리소자및그의구동방법 |
| US6255166B1 (en) | 1999-08-05 | 2001-07-03 | Aalo Lsi Design & Device Technology, Inc. | Nonvolatile memory cell, method of programming the same and nonvolatile memory array |
| JP4058219B2 (ja) * | 1999-09-17 | 2008-03-05 | 株式会社ルネサステクノロジ | 半導体集積回路 |
| JP3820917B2 (ja) * | 2000-06-12 | 2006-09-13 | ソニー株式会社 | 半導体記憶装置およびその動作方法 |
| US6400610B1 (en) * | 2000-07-05 | 2002-06-04 | Motorola, Inc. | Memory device including isolated storage elements that utilize hole conduction and method therefor |
| JP4147765B2 (ja) * | 2001-06-01 | 2008-09-10 | ソニー株式会社 | 不揮発性半導体メモリ装置およびその電荷注入方法 |
| JP3622697B2 (ja) * | 2001-07-23 | 2005-02-23 | セイコーエプソン株式会社 | 不揮発性半導体記憶装置 |
| TW546840B (en) * | 2001-07-27 | 2003-08-11 | Hitachi Ltd | Non-volatile semiconductor memory device |
| JP2004040064A (ja) * | 2002-07-01 | 2004-02-05 | Yutaka Hayashi | 不揮発性メモリとその製造方法 |
| US6706599B1 (en) * | 2003-03-20 | 2004-03-16 | Motorola, Inc. | Multi-bit non-volatile memory device and method therefor |
-
2003
- 2003-07-31 US US10/631,142 patent/US6816414B1/en not_active Expired - Lifetime
-
2004
- 2004-07-13 KR KR1020067002156A patent/KR101039244B1/ko not_active Expired - Fee Related
- 2004-07-13 WO PCT/US2004/022436 patent/WO2005013281A2/en not_active Ceased
- 2004-07-13 CN CNA2004800192720A patent/CN1816883A/zh active Pending
- 2004-07-13 JP JP2006521870A patent/JP2007500938A/ja active Pending
- 2004-07-30 TW TW093122950A patent/TWI360818B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007500938A (ja) | 2007-01-18 |
| WO2005013281A2 (en) | 2005-02-10 |
| KR20060054400A (ko) | 2006-05-22 |
| TW200522079A (en) | 2005-07-01 |
| WO2005013281A3 (en) | 2005-05-19 |
| CN1816883A (zh) | 2006-08-09 |
| KR101039244B1 (ko) | 2011-06-08 |
| US6816414B1 (en) | 2004-11-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |