JP2007500445A - チタン・タングステンのベース層および関連構造体を含む導電構造体を形成する方法 - Google Patents

チタン・タングステンのベース層および関連構造体を含む導電構造体を形成する方法 Download PDF

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JP2007500445A
JP2007500445A JP2006521883A JP2006521883A JP2007500445A JP 2007500445 A JP2007500445 A JP 2007500445A JP 2006521883 A JP2006521883 A JP 2006521883A JP 2006521883 A JP2006521883 A JP 2006521883A JP 2007500445 A JP2007500445 A JP 2007500445A
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layer
conductive
conductive structure
titanium
insulating layer
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JP2007500445A5 (enExample
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ミス，ダニエル・ジェイ
ゼンダー，ディーン
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ユニティブ・インターナショナル・リミテッド
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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JP2006521883A 2003-07-25 2004-07-16 チタン・タングステンのベース層および関連構造体を含む導電構造体を形成する方法 Pending JP2007500445A (ja)

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Application Number Priority Date Filing Date Title
US49034003P 2003-07-25 2003-07-25
US50758703P 2003-10-01 2003-10-01
PCT/US2004/022949 WO2005013339A2 (en) 2003-07-25 2004-07-16 Methods of forming conductive structures including titanium-tungsten base layers and related structures

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JP2007500445A true JP2007500445A (ja) 2007-01-11
JP2007500445A5 JP2007500445A5 (enExample) 2007-09-13

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US (2) US7244671B2 (enExample)
EP (1) EP1649508A2 (enExample)
JP (1) JP2007500445A (enExample)
KR (1) KR20060034716A (enExample)
TW (1) TW200524054A (enExample)
WO (1) WO2005013339A2 (enExample)

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KR20150095547A (ko) * 2014-02-13 2015-08-21 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 언더 범프 금속화

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TWI229930B (en) * 2003-06-09 2005-03-21 Advanced Semiconductor Eng Chip structure
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