JP2007332407A5 - - Google Patents
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- Publication number
- JP2007332407A5 JP2007332407A5 JP2006163423A JP2006163423A JP2007332407A5 JP 2007332407 A5 JP2007332407 A5 JP 2007332407A5 JP 2006163423 A JP2006163423 A JP 2006163423A JP 2006163423 A JP2006163423 A JP 2006163423A JP 2007332407 A5 JP2007332407 A5 JP 2007332407A5
- Authority
- JP
- Japan
- Prior art keywords
- powder
- oxide
- sintered body
- tungsten oxide
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 29
- 239000000395 magnesium oxide Substances 0.000 claims description 26
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 26
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 26
- 229910003437 indium oxide Inorganic materials 0.000 claims description 21
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 19
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 claims description 19
- 238000007740 vapor deposition Methods 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 12
- 238000005245 sintering Methods 0.000 claims description 11
- 239000011777 magnesium Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000000427 thin-film deposition Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000000843 powder Substances 0.000 description 34
- 239000010408 film Substances 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000000465 moulding Methods 0.000 description 9
- 238000001704 evaporation Methods 0.000 description 7
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 7
- 229910001930 tungsten oxide Inorganic materials 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000007733 ion plating Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006163423A JP2007332407A (ja) | 2006-06-13 | 2006-06-13 | 光学薄膜用蒸着材料 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006163423A JP2007332407A (ja) | 2006-06-13 | 2006-06-13 | 光学薄膜用蒸着材料 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007332407A JP2007332407A (ja) | 2007-12-27 |
| JP2007332407A5 true JP2007332407A5 (https=) | 2008-07-10 |
Family
ID=38932159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006163423A Pending JP2007332407A (ja) | 2006-06-13 | 2006-06-13 | 光学薄膜用蒸着材料 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007332407A (https=) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006219357A (ja) * | 2005-02-14 | 2006-08-24 | Sumitomo Metal Mining Co Ltd | 酸化物焼結体、スパッタリングターゲットおよび透明導電性薄膜 |
-
2006
- 2006-06-13 JP JP2006163423A patent/JP2007332407A/ja active Pending
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