JP4831452B2 - プラズマディスプレイパネル用保護膜材料製造方法 - Google Patents
プラズマディスプレイパネル用保護膜材料製造方法 Download PDFInfo
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- JP4831452B2 JP4831452B2 JP2004081746A JP2004081746A JP4831452B2 JP 4831452 B2 JP4831452 B2 JP 4831452B2 JP 2004081746 A JP2004081746 A JP 2004081746A JP 2004081746 A JP2004081746 A JP 2004081746A JP 4831452 B2 JP4831452 B2 JP 4831452B2
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- 230000001681 protective effect Effects 0.000 title claims description 18
- 239000000463 material Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 42
- 239000000395 magnesium oxide Substances 0.000 claims description 41
- 239000013078 crystal Substances 0.000 claims description 13
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 13
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 13
- 229910001887 tin oxide Inorganic materials 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 9
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 239000011230 binding agent Substances 0.000 claims description 5
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims description 5
- 239000000347 magnesium hydroxide Substances 0.000 claims description 4
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims description 4
- 239000002002 slurry Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000001149 thermolysis Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 11
- 238000010304 firing Methods 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000000640 hydroxylating effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
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- Gas-Filled Discharge Tubes (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Physical Vapour Deposition (AREA)
Description
水酸化マグネシウムを加熱分解して作成した粉末酸化マグネシウムに、添加濃度が0.05mol%以上、1.00mol%以下の酸化錫を添加し、1350℃以上、1400℃未満で焼成して、酸化マグネシウム単結晶に対する相対密度が85%を下回らない酸化マグネシウム焼成体を製造することを特徴とする。
以下、図1の流れ図を参照して詳細に各工程を説明する。
本発明においては、酸化マグネシウムに添加物として酸化錫を混入する。その酸化錫の添加濃度は0.05mol%から1.00mol%の範囲内とする。
その混合物に有機バインダを2%〜8%重量比で加える。前記混合物に溶媒を加えて酸化物量が40〜60%重量比となるようにして、これらを混合分散してMgO平均粒径0.2〜0.3ミクロンの粉末径となるようにスラリーを作成する(S103)。バインダにはポリエチレングリコール等を使用し、溶媒にはエタノール等を用いる。
Claims (2)
- 蒸着によりプラズマディスプレイパネル保護膜を形成するために用いられる、酸化マグネシウム焼成体からなるプラズマディスプレイパネル用保護膜材料の製造方法であって、
水酸化マグネシウムを加熱分解して作成した粉末酸化マグネシウムに、添加濃度が0.05mol%以上、1.00mol%以下の酸化錫を添加し、1350℃以上、1400℃未満で焼成して、酸化マグネシウム単結晶に対する相対密度が85%を下回らない酸化マグネシウム焼成体を製造することを特徴とするプラズマディスプレイパネル用保護膜材料製造方法。 - 水中で金属マグネシウムを水酸化させて得た水酸化マグネシウムを加熱分解して作成した粉末酸化マグネシウムと、0.05mol%以上、1.00mol%以下の酸化錫と、溶媒と、のスラリーに有機バインダを加えて湿式混合し、乾燥し、造粒し、加圧成型加工して製造した成型体を、大気中で1350℃以上、1400℃未満で焼成して酸化マグネシウム焼成体を製造することを特徴とする請求項1に記載のプラズマディスプレイパネル用保護膜材料製造方法。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004081746A JP4831452B2 (ja) | 2004-03-19 | 2004-03-19 | プラズマディスプレイパネル用保護膜材料製造方法 |
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| JP2004081746A JP4831452B2 (ja) | 2004-03-19 | 2004-03-19 | プラズマディスプレイパネル用保護膜材料製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005263591A JP2005263591A (ja) | 2005-09-29 |
| JP4831452B2 true JP4831452B2 (ja) | 2011-12-07 |
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| JP2004081746A Expired - Fee Related JP4831452B2 (ja) | 2004-03-19 | 2004-03-19 | プラズマディスプレイパネル用保護膜材料製造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR102205178B1 (ko) * | 2018-12-13 | 2021-01-21 | 한국재료연구원 | 마그네시아 및 그 제조 방법, 및 고열전도성 마그네시아 조성물, 이를 이용한 마그네시아 세라믹스 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4627652B2 (ja) * | 2003-10-21 | 2011-02-09 | 宇部マテリアルズ株式会社 | 酸化マグネシウム蒸着材 |
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