JP2007294082A - Ｎａｎｄ型不揮発性メモリのデータ消去方法 - Google Patents

Ｎａｎｄ型不揮発性メモリのデータ消去方法 Download PDF

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Publication number
JP2007294082A
JP2007294082A JP2007090867A JP2007090867A JP2007294082A JP 2007294082 A JP2007294082 A JP 2007294082A JP 2007090867 A JP2007090867 A JP 2007090867A JP 2007090867 A JP2007090867 A JP 2007090867A JP 2007294082 A JP2007294082 A JP 2007294082A
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nonvolatile memory
nand
film
insulating film
charge storage
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Japanese (ja)
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JP2007294082A5 (enExample
Inventor
Mitsuaki Osame
光明 納
Hiroyuki Miyake
博之 三宅
Aya Miyazaki
彩 宮崎
Shunpei Yamazaki
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007090867A priority Critical patent/JP2007294082A/ja
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Publication of JP2007294082A5 publication Critical patent/JP2007294082A5/ja
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  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2007090867A 2006-03-31 2007-03-30 Ｎａｎｄ型不揮発性メモリのデータ消去方法 Withdrawn JP2007294082A (ja)

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JP2007090867A JP2007294082A (ja) 2006-03-31 2007-03-30 Ｎａｎｄ型不揮発性メモリのデータ消去方法

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JP2012119909A Division JP2012212892A (ja) 2006-03-31 2012-05-25 Ｎａｎｄ型不揮発性メモリのデータ消去方法

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JP2007294082A5 JP2007294082A5 (enExample) 2010-05-06

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009245958A (ja) * 2008-03-28 2009-10-22 Toshiba Corp Ｎａｎｄ型不揮発性半導体メモリ装置およびその製造方法
KR101038131B1 (ko) 2007-12-21 2011-05-31 가부시끼가이샤 도시바 불휘발성 반도체 메모리
JP2011159362A (ja) * 2010-02-02 2011-08-18 Toshiba Corp 不揮発性半導体記憶装置および不揮発性半導体記憶装置の駆動方法
JP2013168673A (ja) * 2013-04-26 2013-08-29 Toshiba Corp Ｎａｎｄ型不揮発性半導体メモリ装置およびその製造方法
JP2014103318A (ja) * 2012-11-21 2014-06-05 Toshiba Corp 半導体装置およびその製造方法
JP2017120915A (ja) * 2015-12-29 2017-07-06 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． 埋め込みフラッシュメモリセルの均一なトンネル誘電体の製造方法
US10269822B2 (en) 2015-12-29 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method to fabricate uniform tunneling dielectric of embedded flash memory cell

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02260455A (ja) * 1988-12-15 1990-10-23 Samsung Electron Co Ltd 電気的に消去及びプログラム可能な半導体メモリ装置及びその消去方法及びそのプログラム方法
JPH0334461A (ja) * 1989-06-30 1991-02-14 Semiconductor Energy Lab Co Ltd 電界効果型半導体装置
JPH05129632A (ja) * 1991-10-31 1993-05-25 Rohm Co Ltd 電荷トラツプ膜
JPH06275799A (ja) * 1993-03-22 1994-09-30 Nec Corp 不揮発性記憶装置の制御方法
JPH09153292A (ja) * 1995-11-29 1997-06-10 Nec Corp 不揮発性半導体記憶装置
JPH11219950A (ja) * 1998-02-03 1999-08-10 Hitachi Ltd 半導体集積回路の製造方法並びにその製造装置
JP2000058685A (ja) * 1998-07-23 2000-02-25 Samsung Electronics Co Ltd 高集積化のための不揮発性メモリ及びその製造方法
JP2002313809A (ja) * 2001-01-26 2002-10-25 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2003100750A (ja) * 2001-09-20 2003-04-04 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2003152102A (ja) * 2001-11-15 2003-05-23 Hitachi Ltd 半導体集積回路装置の製造方法
JP2003204000A (ja) * 2002-01-10 2003-07-18 Sony Corp 不揮発性半導体メモリ装置および電荷注入方法
JP2004363329A (ja) * 2003-06-04 2004-12-24 Toshiba Corp 半導体記憶装置
JP2005182551A (ja) * 2003-12-19 2005-07-07 Semiconductor Energy Lab Co Ltd 薄膜集積回路、半導体回路、及び半導体装置
JP2005259334A (ja) * 2004-02-10 2005-09-22 Semiconductor Energy Lab Co Ltd 不揮発性メモリ
JP2006041107A (ja) * 2004-07-26 2006-02-09 Seiko Epson Corp 半導体装置及びその製造方法
JP2006066904A (ja) * 2004-07-30 2006-03-09 Semiconductor Energy Lab Co Ltd レーザ照射装置およびレーザ照射方法

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02260455A (ja) * 1988-12-15 1990-10-23 Samsung Electron Co Ltd 電気的に消去及びプログラム可能な半導体メモリ装置及びその消去方法及びそのプログラム方法
JPH0334461A (ja) * 1989-06-30 1991-02-14 Semiconductor Energy Lab Co Ltd 電界効果型半導体装置
JPH05129632A (ja) * 1991-10-31 1993-05-25 Rohm Co Ltd 電荷トラツプ膜
JPH06275799A (ja) * 1993-03-22 1994-09-30 Nec Corp 不揮発性記憶装置の制御方法
JPH09153292A (ja) * 1995-11-29 1997-06-10 Nec Corp 不揮発性半導体記憶装置
JPH11219950A (ja) * 1998-02-03 1999-08-10 Hitachi Ltd 半導体集積回路の製造方法並びにその製造装置
JP2000058685A (ja) * 1998-07-23 2000-02-25 Samsung Electronics Co Ltd 高集積化のための不揮発性メモリ及びその製造方法
JP2002313809A (ja) * 2001-01-26 2002-10-25 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2003100750A (ja) * 2001-09-20 2003-04-04 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2003152102A (ja) * 2001-11-15 2003-05-23 Hitachi Ltd 半導体集積回路装置の製造方法
JP2003204000A (ja) * 2002-01-10 2003-07-18 Sony Corp 不揮発性半導体メモリ装置および電荷注入方法
JP2004363329A (ja) * 2003-06-04 2004-12-24 Toshiba Corp 半導体記憶装置
JP2005182551A (ja) * 2003-12-19 2005-07-07 Semiconductor Energy Lab Co Ltd 薄膜集積回路、半導体回路、及び半導体装置
JP2005259334A (ja) * 2004-02-10 2005-09-22 Semiconductor Energy Lab Co Ltd 不揮発性メモリ
JP2006041107A (ja) * 2004-07-26 2006-02-09 Seiko Epson Corp 半導体装置及びその製造方法
JP2006066904A (ja) * 2004-07-30 2006-03-09 Semiconductor Energy Lab Co Ltd レーザ照射装置およびレーザ照射方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101038131B1 (ko) 2007-12-21 2011-05-31 가부시끼가이샤 도시바 불휘발성 반도체 메모리
US8134200B2 (en) 2007-12-21 2012-03-13 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory including a gate insulating film and an inter-gate insulating film
JP2009245958A (ja) * 2008-03-28 2009-10-22 Toshiba Corp Ｎａｎｄ型不揮発性半導体メモリ装置およびその製造方法
JP2011159362A (ja) * 2010-02-02 2011-08-18 Toshiba Corp 不揮発性半導体記憶装置および不揮発性半導体記憶装置の駆動方法
JP2014103318A (ja) * 2012-11-21 2014-06-05 Toshiba Corp 半導体装置およびその製造方法
US9111965B2 (en) 2012-11-21 2015-08-18 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2013168673A (ja) * 2013-04-26 2013-08-29 Toshiba Corp Ｎａｎｄ型不揮発性半導体メモリ装置およびその製造方法
JP2017120915A (ja) * 2015-12-29 2017-07-06 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． 埋め込みフラッシュメモリセルの均一なトンネル誘電体の製造方法
US10269822B2 (en) 2015-12-29 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method to fabricate uniform tunneling dielectric of embedded flash memory cell
US10879257B2 (en) 2015-12-29 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated chip having a logic gate electrode and a tunnel dielectric layer
US11532637B2 (en) 2015-12-29 2022-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. Embedded flash memory cell including a tunnel dielectric layer having different thicknesses over a memory region
US12114503B2 (en) 2015-12-29 2024-10-08 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated chip including a tunnel dielectric layer which has different thicknesses over a protrusion region of a substrate

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